公开(公告)号：US08640569B2

公开(公告)日：2014-02-04

申请号：US13459006

申请日：2012-04-27

申请人： Tsung-Jen Chen ,  Chia-Jen Cheng

发明人： Tsung-Jen Chen ,  Chia-Jen Cheng

IPC分类号： F16C15/00

CPC分类号： A63B22/0605 ,  A63B21/00069 ,  A63B21/225 ,  A63B22/0664 ,  A63B2022/0676 ,  Y10T74/2121 ,  Y10T74/2132

摘要： A freewheel structure includes a wheel frame and at least one weight block. The wheel frame has a central axle portion and a flange portion around an outer edge thereof. The axle portion is for insertion of an axle member. The weight block is selectively located between the axle portion and the flange portion, so that the weight block has a certain distance relative to axle portion. The freewheel will generate a greater centrifugal force when it is rotated at a high speed. The inertial effect of the present invention can be enhanced when the rotational speed is increasing progressively, so the curve of inertial weight is elongated obviously. The whole weight of the freewheel is reduced effectively.

摘要翻译： 自由轮结构包括车轮框架和至少一个重量块。 轮架具有中心轴部分和围绕其外边缘的凸缘部分。 轴部分用于插入轴构件。 重块被选择性地位于轴部分和凸缘部分之间，使得重物块相对于轴部分具有一定的距离。 当高速旋转时，自由轮将产生更大的离心力。 当转速逐渐增加时，可以提高本发明的惯性效应，因此惯性重量的曲线明显拉长。 飞轮的整体重量有效降低。

公开(公告)号：US07187078B2

公开(公告)日：2007-03-06

申请号：US10938594

申请日：2004-09-13

申请人： Tzu-Han Lin ,  Huei-Mei Yu ,  Chia-Jen Cheng ,  Chun-Yen Lo ,  Li-Hsin Tseng ,  Boe Su ,  Simon Lu

发明人： Tzu-Han Lin ,  Huei-Mei Yu ,  Chia-Jen Cheng ,  Chun-Yen Lo ,  Li-Hsin Tseng ,  Boe Su ,  Simon Lu

IPC分类号： H01L29/40

CPC分类号： H01L24/13 ,  H01L24/05 ,  H01L2224/02125 ,  H01L2224/05001 ,  H01L2224/05007 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Solder bump structures for semiconductor device packaging is provided. In one embodiment, a solder bump structure comprises a semiconductor substrate, the substrate has at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad. At least one patterned and etched polymer layer is formed on a portion of the contact pad. At least one patterned and etched conductive metal layer is formed above the polymer layer and is aligned therewith. And at least one layer of solder material having a solder height is provided above the conductive metal layer, the layer of solder is aligned with the conductive metal layer, the layer of solder is thereafter reflown thereby creating a solder ball.

摘要翻译： 提供了用于半导体器件封装的焊接凸块结构。 在一个实施例中，焊料凸块结构包括半导体衬底，所述衬底具有至少一个接触焊盘和具有形成在其中的至少一个开口的上钝化层，其暴露接触焊盘的一部分。 在接触垫的一部分上形成至少一个图案化和蚀刻的聚合物层。 在聚合物层之上形成至少一个图案化和蚀刻的导电金属层并与其对准。 并且在导电金属层的上方设置至少一层具有焊料高度的焊料材料，该焊料层与导电金属层对准，此后焊料层被回流，从而形成焊球。

公开(公告)号：US20060105560A1

公开(公告)日：2006-05-18

申请号：US10988528

申请日：2004-11-16

申请人： Li-Hsin Tseng ,  Gil Huang ,  Huei-Mei Yu ,  Chia-Jen Cheng ,  Ken Sun ,  Chien-Tung Yu ,  Blenny Chang ,  Chih Chan ,  Jian-Wen Luo ,  Owen Chen

发明人： Li-Hsin Tseng ,  Gil Huang ,  Huei-Mei Yu ,  Chia-Jen Cheng ,  Ken Sun ,  Chien-Tung Yu ,  Blenny Chang ,  Chih Chan ,  Jian-Wen Luo ,  Owen Chen

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2224/05552 ,  H01L2924/00014 ,  H01L2924/013

摘要： A method for forming solder bumps (or solder balls after reflow) of improved height and reliability is provided. In one embodiment, a semiconductor substrate having at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad is provided. A layer of under bump metal (UBM) is formed above the passivation layer and the contact pad. A first patterned and etched photoresist layer is provided above the UBM layer, the first patterned and etched photoresist layer defining at least one first opening therein. A second patterned and etched photoresist layer is provided above the first patterned and etched photoresist layer, the second patterned and etched photoresist layer defining at least one second opening therein, the second opening being wider than the first opening. A solder material is filled in the at least one first opening and substantially filled in the at least one second opening. The first and second photoresist layers are removed and the solder material is reflown to create a solder ball of increased height.

摘要翻译： 提供了一种改善高度和可靠性的形成焊料凸块（或回流焊球）的方法。 在一个实施例中，提供了具有至少一个接触焊盘和具有形成在其中的至少一个开口的上钝化层的半导体衬底，其暴露接触焊盘的一部分。 在钝化层和接触垫之上形成一层下凸块金属（UBM）。 第一图案化和蚀刻的光致抗蚀剂层设置在UBM层上方，第一图案化和蚀刻光刻胶层在其中限定至少一个第一开口。 第二图案化和蚀刻光刻胶层设置在第一图案化和蚀刻光刻胶层的上方，第二图案化和蚀刻光刻胶层在其中限定至少一个第二开口，第二开口比第一开口更宽。 焊料材料填充在至少一个第一开口中并且基本上填充在至少一个第二开口中。 去除第一和第二光致抗蚀剂层，并且焊料材料被重新喷射以产生增加的高度的焊球。

公开(公告)号：US08624392B2

公开(公告)日：2014-01-07

申请号：US13152734

申请日：2011-06-03

申请人： Ming-Chih Yew ,  Fu-Jen Li ,  Po-Yao Lin ,  Chia-Jen Cheng ,  Hsiu-Mei Yu

发明人： Ming-Chih Yew ,  Fu-Jen Li ,  Po-Yao Lin ,  Chia-Jen Cheng ,  Hsiu-Mei Yu

IPC分类号： H01L23/485

CPC分类号： H01L24/13 ,  H01L21/76885 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/82 ,  H01L2224/02235 ,  H01L2224/02255 ,  H01L2224/0235 ,  H01L2224/02375 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05541 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/10155 ,  H01L2224/13005 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/351 ,  H01L2924/35121 ,  H01L2924/207 ,  H01L2924/2076 ,  H01L2224/05552

摘要： A system and method for providing a post-passivation and underbump metallization is provided. An embodiment comprises a post-passivation layer that is larger than an overlying underbump metallization. The post-passivation layer extending beyond the underbump metallization shields the underlying layers from stresses generated from mismatches of the materials' coefficient of thermal expansion.

摘要翻译： 提供了一种用于提供后钝化和欠掺杂金属化的系统和方法。 一个实施例包括大于上覆下凸点金属化的后钝化层。 延伸超过下凸块金属化的后钝化层屏蔽下层不受材料的热膨胀系数的不匹配产生的应力。

公开(公告)号：US20090026608A1

公开(公告)日：2009-01-29

申请号：US11782384

申请日：2007-07-24

申请人： Mon-Chin Tsai ,  Hsiu-Mei Yo ,  Chien-Min Lin ,  Chia-Jen Cheng ,  Li-Hsin Tseng

发明人： Mon-Chin Tsai ,  Hsiu-Mei Yo ,  Chien-Min Lin ,  Chia-Jen Cheng ,  Li-Hsin Tseng

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L23/66 ,  H01L23/3114 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03462 ,  H01L2224/0401 ,  H01L2224/05559 ,  H01L2224/05647 ,  H01L2224/131 ,  H01L2224/94 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/01014 ,  H01L2924/00

摘要： A structure, a system, and a method for manufacture of crosstalk-free wafer level chip scale packaging (WLCSP) structure for high frequency applications is provided. An illustrative embodiment comprises a substrate on which various layers and structures form circuitry, a signal pin formed on the substrate and coupled with the circuitry, a ground ring encircling the signal pin, and a grounded solder bump coupled to the ground ring.

摘要翻译： 提供了用于高频应用的用于制造无串扰晶片级芯片级封装（WLCSP）结构的结构，系统和方法。 示例性实施例包括其上各种层和结构形成电路的衬底，形成在衬底上并与电路耦合的信号引脚，环绕信号引脚的接地环和耦合到接地环的接地焊料凸块。

公开(公告)号：US20080303154A1

公开(公告)日：2008-12-11

申请号：US11811660

申请日：2007-06-11

申请人： Hon-Lin Huang ,  Boe Su ,  Li-Hsin Tseng ,  Chia-Jen Cheng ,  Hsiu-Mei Yu

发明人： Hon-Lin Huang ,  Boe Su ,  Li-Hsin Tseng ,  Chia-Jen Cheng ,  Hsiu-Mei Yu

IPC分类号： H01L23/528 ,  H01L21/4763

CPC分类号： H01L23/53238 ,  H01L21/6836 ,  H01L21/76898 ,  H01L24/05 ,  H01L2221/6834 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043

摘要： An integrated circuit structure and methods for forming the same are provided. The method includes providing a substrate; forming a through-silicon via (TSV) opening extending into the substrate; forming an under-bump metallurgy (UBM) in the TSV opening, wherein the UBM extends out of the TSV opening; filling the TSV opening with a metallic material; forming a patterned cap layer on the metallic material; and etching a portion of the UBM outside the TSV opening, wherein the patterned cap layer is used as a mask.

摘要翻译： 提供一种集成电路结构及其形成方法。 该方法包括提供基板; 形成延伸到衬底中的穿硅通孔（TSV）开口; 在TSV开口中形成凸块下冶金（UBM），其中UBM延伸出TSV开口; 用金属材料填充TSV开口; 在所述金属材料上形成图案化的盖层; 并且将所述UBM的一部分蚀刻在所述TSV开口外部，其中所述图案化盖层用作掩模。

公开(公告)号：US20060019480A1

公开(公告)日：2006-01-26

申请号：US10896831

申请日：2004-07-22

申请人： Chia-Jen Cheng ,  Hui-Mei Yu ,  Li-Hsin Tseng ,  Tzu-Han Lin ,  Ching-Chiang Wu ,  Chun-Yen Lo ,  Li-Chuan Huang ,  Boe Su

发明人： Chia-Jen Cheng ,  Hui-Mei Yu ,  Li-Hsin Tseng ,  Tzu-Han Lin ,  Ching-Chiang Wu ,  Chun-Yen Lo ,  Li-Chuan Huang ,  Boe Su

IPC分类号： H01L21/44

CPC分类号： H01L24/12 ,  H01L23/3114 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/00014

摘要： A method for fabricating a pad redistribution layer. First, at least one bonding pad exposed by a first passivation layer is provided. A diffusion barrier layer and a seed layer are then formed over the first passivation layer and the bonding pad. A patterned mask layer is then formed over the seed layer to expose a portion thereof over the bonding pad, and a metal layer is then formed thereon. A sacrificial layer is then formed over the substrate and the sacrificial layer over the patterned mask layer is removed. The conductive film exposed by the metal layer and the remaining sacrificial layer is then removed, leaving a pad redistribution layer for the bonding pad.

公开(公告)号：US20080044756A1

公开(公告)日：2008-02-21

申请号：US11465375

申请日：2006-08-17

申请人： Chih-Min Tseng ,  Hsiu-Mei Yu ,  Wen-Hsiang Tseng ,  Chia-Jen Cheng ,  Y. L. Feng ,  Tung-Wen Hsieh

发明人： Chih-Min Tseng ,  Hsiu-Mei Yu ,  Wen-Hsiang Tseng ,  Chia-Jen Cheng ,  Y. L. Feng ,  Tung-Wen Hsieh

IPC分类号： G03C11/12

CPC分类号： G03F7/422

摘要： A method for removing dry film resist (DFR) from a fine pitch solder bump array on a semiconductor wafer provides for pre-soaking the wafer in a chemical bath then turbulently exposing the wafer to a chemical solution, both steps taking place in batch processing with the wafers processed in a vertical position. The wafers are then individually processed through a chemical spinning operation in which a chemical solution is dispensed from a spray nozzle while motion such as spinning is imparted the horizontally disposed wafer. The spin speed of the chemical spraying process may then be increased to accelerate physical removal of residue. Deionized water rinsing and spin-drying provide a solder bump array void of any DFR or other residuals.

摘要翻译： 从半导体晶片上的细间距焊料凸点阵列去除干膜抗蚀剂（DFR）的方法提供将晶片预浸在化学浴中，然后将晶片湍流地暴露于化学溶液，这两个步骤在批处理中发生， 晶片在垂直位置处理。 然后通过化学纺丝操作单独处理晶片，其中从喷雾喷嘴分配化学溶液，同时使诸如旋转的运动赋予水平设置的晶片。 然后可以增加化学喷涂过程的旋转速度以加速残留物的物理去除。 去离子水冲洗和旋转干燥提供无任何DFR或其他残留物的焊料凸块阵列。

公开(公告)号：US06541366B1

公开(公告)日：2003-04-01

申请号：US10043058

申请日：2002-01-08

申请人： Shih-Ming Chin ,  Fang-Chuang Liu ,  Chia-Jen Cheng ,  Hsiu-Mei Yu

发明人： Shih-Ming Chin ,  Fang-Chuang Liu ,  Chia-Jen Cheng ,  Hsiu-Mei Yu

IPC分类号： H01L2144

CPC分类号： H01L24/81 ,  H01L24/02 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11502 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/14051 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2224/13099 ,  H01L2224/1146

摘要： A method for improving an adhesion bond between a solder material and an under bump metallization (UBM) layer including providing at least two UBM layers overlying a chip bonding pad including an uppermost UBM layer forming a contact layer for forming a solder bump thereon; depositing a solder bump precursor material overlying the contact layer to form a solder column; exposing the sidewalls of the solder column to include the contact layer sidewalls; oxidizing the contact layer sidewalls to form a contact layer sidewall oxide at a temperature lower than the melting point of the solder bump precursor material; and forming a solder bump by reflowing the precursor material to wet the contact layer surface to exclude the contact layer sidewalls.

摘要翻译： 一种用于改善焊料材料和凸块下金属化（UBM）层之间的粘合粘合的方法，包括提供覆盖在包括形成用于在其上形成焊料凸块的接触层的最上层的UBM层的芯片焊盘上的至少两个UBM层; 沉积覆盖接触层的焊料凸起前体材料以形成焊料柱; 暴露焊料柱的侧壁以包括接触层侧壁; 氧化接触层侧壁以在低于焊料凸块前体材料的熔点的温度下形成接触层侧壁氧化物; 以及通过回流前体材料以润湿接触层表面以排除接触层侧壁而形成焊料凸块。

公开(公告)号：US07863742B2

公开(公告)日：2011-01-04

申请号：US11933572

申请日：2007-11-01

申请人： Hsiu-Mei Yu ,  Tjandra Winata Karta ,  Daniel Yang ,  Shih-Ming Chen ,  Chia-Jen Cheng

发明人： Hsiu-Mei Yu ,  Tjandra Winata Karta ,  Daniel Yang ,  Shih-Ming Chen ,  Chia-Jen Cheng

IPC分类号： H01L23/488

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/05552 ,  H01L2924/01004 ,  H01L2924/013 ,  H01L2924/01028 ,  H01L2924/0105

摘要： An integrated circuit structure includes a passivation layer; a via opening in the passivation layer; a copper-containing via in the via opening; a polymer layer over the passivation layer, wherein the polymer layer comprises an aperture, and wherein the copper-containing via is exposed through the aperture; a post-passivation interconnect (PPI) line over the polymer layer, wherein the PPI line extends into the aperture and physically contacts the copper-via opening; and an under-bump metallurgy (UBM) over and electrically connected to the PPI line.

摘要翻译： 集成电路结构包括钝化层; 钝化层中的通孔; 通孔开口中的含铜通孔; 在所述钝化层上的聚合物层，其中所述聚合物层包括孔，并且其中所述含铜通孔通过所述孔露出; 在聚合物层上方的钝化后互连（PPI）线，其中PPI线延伸到孔中并物理接触铜通孔; 以及在PPI线上电连接的凸块下冶金（UBM）。