公开(公告)号：US08766440B2

公开(公告)日：2014-07-01

申请号：US13582128

申请日：2011-01-25

申请人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Kentaro Mori ,  Yoshiki Nakashima ,  Daisuke Ohshima

发明人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Kentaro Mori ,  Yoshiki Nakashima ,  Daisuke Ohshima

IPC分类号： H01L23/52

CPC分类号： H05K1/186 ,  H01L21/568 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/23 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/2101 ,  H01L2224/221 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/1461 ,  H05K3/4644 ,  H01L2924/00

摘要： A wiring board including a built-in semiconductor element includes the semiconductor element, a peripheral insulating layer covering an outer peripheral side surface of the semiconductor element, an upper surface-side wiring provided on an upper surface side of the wiring board, and a lower surface-side wiring provided on a lower surface side of the wiring board. The semiconductor element includes a first wiring structure layer including a first wiring and a first insulating layer alternately provided on a semiconductor substrate, and a second wiring structure layer including a second wiring and a second insulating layer alternately provided on the first wiring structure layer. The upper surface-side wiring includes a wiring electrically connected to the first wiring via the second wiring. The second wiring is thicker than the first wiring and thinner than the upper surface-side wiring. The second insulating layer is formed of a resin material and is thicker than the first insulating layer.

摘要翻译： 包括内置半导体元件的布线板包括半导体元件，覆盖半导体元件的外周侧表面的外围绝缘层，设置在布线基板的上表面侧的上表面侧布线，以及下部 设置在布线基板的下表面侧的表面侧配线。 半导体元件包括：第一布线结构层，包括交替设置在半导体基板上的第一布线和第一绝缘层;以及第二布线结构层，包括交替设置在第一布线结构层上的第二布线和第二绝缘层。 上表面侧布线包括经由第二布线电连接到第一布线的布线。 第二布线比第一布线厚，比上表面布线薄。 第二绝缘层由树脂材料形成，并且比第一绝缘层厚。

公开(公告)号：US20130127037A1

公开(公告)日：2013-05-23

申请号：US13638421

申请日：2011-03-03

申请人： Kentaro Mori ,  Shintaro Yamamichi ,  Katsumi Kikuchi ,  Daisuke Ohshima ,  Yoshiki Nakashima ,  Hideya Murai

发明人： Kentaro Mori ,  Shintaro Yamamichi ,  Katsumi Kikuchi ,  Daisuke Ohshima ,  Yoshiki Nakashima ,  Hideya Murai

IPC分类号： H01L23/34

CPC分类号： H01L23/34 ,  H01L23/3114 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/5389 ,  H01L24/04 ,  H01L24/12 ,  H01L24/19 ,  H01L24/20 ,  H01L24/24 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24146 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2225/06589 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10342 ,  H01L2924/12042 ,  H01L2924/1431 ,  H01L2924/1432 ,  H01L2924/1435 ,  H01L2924/145 ,  H05K1/0203 ,  H05K1/185 ,  H05K2201/10515 ,  H01L2924/3512 ,  H01L2924/00

摘要： An object of the present invention is to provide a semiconductor device built-in substrate, which can be made thin and can suppress occurrence of warpage. The present invention provides a semiconductor substrate which is featured by including a first semiconductor device serving as a substrate, a second semiconductor device placed on the circuit surface side of the first semiconductor device in the state where the circuit surfaces of the first and second semiconductor devices are placed to face in the same direction, and an insulating layer incorporating therein the second semiconductor device, and which is featured in that a heat dissipation layer is formed at least between the first semiconductor device and the second semiconductor device, and in that the heat dissipation layer is formed on the first semiconductor device so as to extend up to the outside of the second semiconductor device.

摘要翻译： 本发明的一个目的是提供一种内置半导体器件的基板，它可以制成薄而可以抑制翘曲的发生。 本发明提供一种半导体衬底，其特征在于包括：第一半导体器件，用作衬底;第二半导体器件，其位于第一半导体器件的电路表面侧，处于第一和第二半导体器件的电路表面的状态 被放置成面向相同的方向，并且其中包含第二半导体器件的绝缘层，其特征在于至少在第一半导体器件和第二半导体器件之间形成散热层，并且其中的热量 散热层形成在第一半导体器件上，以便延伸到第二半导体器件的外部。

公开(公告)号：US20120319254A1

公开(公告)日：2012-12-20

申请号：US13582128

申请日：2011-01-25

申请人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Kentaro Mori ,  Yoshiki Nakashima ,  Daisuke Ohshima

发明人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Kentaro Mori ,  Yoshiki Nakashima ,  Daisuke Ohshima

IPC分类号： H01L23/48 ,  H01L23/552

CPC分类号： H05K1/186 ,  H01L21/568 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/23 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/2101 ,  H01L2224/221 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/1461 ,  H05K3/4644 ,  H01L2924/00

摘要： A wiring board including a built-in semiconductor element includes the semiconductor element, a peripheral insulating layer covering an outer peripheral side surface of the semiconductor element, an upper surface-side wiring provided on an upper surface side of the wiring board, and a lower surface-side wiring provided on a lower surface side of the wiring board. The semiconductor element includes a first wiring structure layer including a first wiring and a first insulating layer alternately provided on a semiconductor substrate, and a second wiring structure layer including a second wiring and a second insulating layer alternately provided on the first wiring structure layer. The upper surface-side wiring includes a wiring electrically connected to the first wiring via the second wiring. The second wiring is thicker than the first wiring and thinner than the upper surface-side wiring. The second insulating layer is formed of a resin material and is thicker than the first insulating layer.

摘要翻译： 包括内置半导体元件的布线板包括半导体元件，覆盖半导体元件的外周侧表面的外围绝缘层，设置在布线基板的上表面侧的上表面侧布线，以及下部 设置在布线基板的下表面侧的表面侧配线。 半导体元件包括：第一布线结构层，包括交替设置在半导体基板上的第一布线和第一绝缘层;以及第二布线结构层，包括交替设置在第一布线结构层上的第二布线和第二绝缘层。 上表面侧布线包括经由第二布线电连接到第一布线的布线。 第二布线比第一布线厚，比上表面布线薄。 第二绝缘层由树脂材料形成，并且比第一绝缘层厚。

公开(公告)号：US08710639B2

公开(公告)日：2014-04-29

申请号：US13639735

申请日：2011-02-22

申请人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Kentaro Mori ,  Yoshiki Nakashima

发明人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Kentaro Mori ,  Yoshiki Nakashima

IPC分类号： H01L23/02

CPC分类号： H05K1/185 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/50 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/73267 ,  H01L2224/83 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/19041 ,  H05K1/0271 ,  H05K1/186 ,  H05K3/4602 ,  H05K2201/10674 ,  H05K2203/1469 ,  H01L2224/81 ,  H01L2924/00015 ,  H01L2224/85 ,  H01L2224/82 ,  H01L2224/45 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/48

摘要： A wiring substrate in which a semiconductor element is built includes a semiconductor element; a peripheral insulating layer covering at least an outer circumferential side surface of this semiconductor element; and an upper surface-side wiring line provided on the upper surface side of the wiring substrate. The semiconductor element includes an internal terminal electrically connected to the upper surface-side wiring line on the upper surface side of the semiconductor element. This internal terminal includes a first conductive part exposed out of an insulating surface layer of the semiconductor element; an adhesion layer on this first conductive part; and a second conductive part on this adhesion layer. The adhesion layer covers an exposed surface of the first conductive part, and is formed on a portion of the insulating surface layer around the exposed surface of the first conductive part, and the adhesion layer extends around the outer side of an outer edge of this second conductive part so as to surround the second conductive part.

摘要翻译： 构成半导体元件的布线基板包括半导体元件; 覆盖该半导体元件的至少外周侧表面的外围绝缘层; 以及设置在布线基板的上表面侧的上表面侧布线。 半导体元件包括电连接到半导体元件的上表面侧的上表面侧布线的内部端子。 该内部端子包括从半导体元件的绝缘表面层露出的第一导电部件; 在该第一导电部分上的粘附层; 和该粘合层上的第二导电部分。 粘合层覆盖第一导电部分的暴露表面，并且形成在第一导电部分的暴露表面周围的绝缘表面层的一部分上，并且粘合层围绕该第二导电部分的外边缘的外侧延伸 导电部件以包围第二导电部件。

公开(公告)号：US08569892B2

公开(公告)日：2013-10-29

申请号：US13062262

申请日：2009-10-05

申请人： Kentaro Mori ,  Daisuke Ohshima ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Maeda ,  Katsumi Kikuchi ,  Yoshiki Nakashima

发明人： Kentaro Mori ,  Daisuke Ohshima ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Maeda ,  Katsumi Kikuchi ,  Yoshiki Nakashima

IPC分类号： H01L23/48 ,  H01L23/10

CPC分类号： H01L24/85 ,  H01L23/13 ,  H01L23/142 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/24 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/91 ,  H01L24/92 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/2402 ,  H01L2224/24226 ,  H01L2224/24227 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/73227 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/85 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/014 ,  H01L2924/078 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate.

摘要翻译： 半导体器件包括：至少一个具有电极端子的半导体元件; 支撑半导体元件的金属板; 以及覆盖半导体元件并且在表面上交替堆叠的多个绝缘层和布线层以及外部连接端子的布线板，布线层通过通孔彼此电连接。 电极端子和外部连接端子经由布线层和通孔中的至少一个电连接。 至少一个电极端子，即布线层和通孔，电连接到金属板。

公开(公告)号：US20120300425A1

公开(公告)日：2012-11-29

申请号：US13574455

申请日：2011-01-07

申请人： Yoshiki Nakashima ,  Shintaro Yamamichi ,  Katsumi Kikuchi ,  Kentaro Mori ,  Hideya Murai

发明人： Yoshiki Nakashima ,  Shintaro Yamamichi ,  Katsumi Kikuchi ,  Kentaro Mori ,  Hideya Murai

IPC分类号： H05K1/18 ,  H05K1/11

CPC分类号： H05K1/182 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/18162 ,  H05K1/0298 ,  H05K1/115 ,  H05K1/185 ,  Y10T29/49126 ,  Y10T29/49165 ,  Y10T428/24322 ,  H01L2924/00

摘要： An object of the present invention is to propose a functional element built-in substrate which enables an electrode terminal of a functional element to be well connected to the back surface on the side opposite to the electrode terminal of the functional element, and which can be miniaturized. According to the present invention, there is provided a functional element built-in substrate including a functional element provided with an electrode terminal on one surface side of the functional element, and a wiring substrate including a laminated structure in which the functional element is embedded so that the electrode terminal of the functional element faces the front surface side of the structure, and which is formed at least in a side surface region of the functional element by laminating a plurality of wiring insulating layers each including a wiring, the functional element built-in substrate being featured in that the electrode terminal and the back surface side of the wiring substrate are electrically connected to each other through the wiring of the laminated structure, and in that, in a pair of the wiring insulating layers included in the laminated structure and that are in contact with each other, the cross-sectional shape of the wiring in each of the wiring insulating layers, which cross-sectional shape is taken along the plane perpendicular to the extension direction of the wiring in the wiring insulating layer, has a relationship that the cross-sectional area of the wiring in the back surface side wiring insulating layer is larger than the cross-sectional area of the wiring in the front surface side wiring insulating layer.

摘要翻译： 本发明的目的是提出一种功能元件内置基板，其使功能元件的电极端子能够良好地连接到与功能元件的电极端子相反的一侧的背面，并且其可以是 小型化。 根据本发明，提供了一种功能元件内置基板，其包括在功能元件的一个表面侧上设置有电极端子的功能元件，以及包括功能元件嵌入其中的层叠结构的布线基板 所述功能元件的电极端子面向所述结构的前表面侧，并且通过层叠多个布线绝缘层而形成在所述功能元件的至少侧面区域中，所述多个布线绝缘层包括布线， 其特征在于，布线基板的电极端子和背面侧通过层叠结构的布线电连接，并且其中，在层叠结构中包括的一对布线绝缘层和 彼此接触，每个布线绝缘中的布线的横截面形状 与布线绝缘层中的配线的延伸方向垂直的平面截取的截面形状的层具有这样的关系：背面侧配线绝缘层中的布线的截面积大于 表面侧配线绝缘层中的配线的截面积。

公开(公告)号：US08929090B2

公开(公告)日：2015-01-06

申请号：US13574455

申请日：2011-01-07

申请人： Yoshiki Nakashima ,  Shintaro Yamamichi ,  Katsumi Kikuchi ,  Kentaro Mori ,  Hideya Murai

发明人： Yoshiki Nakashima ,  Shintaro Yamamichi ,  Katsumi Kikuchi ,  Kentaro Mori ,  Hideya Murai

IPC分类号： H05K1/18 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538

CPC分类号： H05K1/182 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/12042 ,  H01L2924/15153 ,  H01L2924/18162 ,  H05K1/0298 ,  H05K1/115 ,  H05K1/185 ,  Y10T29/49126 ,  Y10T29/49165 ,  Y10T428/24322 ,  H01L2924/00

摘要： An object of the present invention is to propose a functional element built-in substrate which enables an electrode terminal of a functional element to be well connected to the back surface on the side opposite to the electrode terminal of the functional element, and which can be miniaturized. According to the present invention, there is provided a functional element built-in substrate including a functional element provided with an electrode terminal on one surface side of the functional element, and a wiring substrate including a laminated structure in which the functional element is embedded so that the electrode terminal of the functional element faces the front surface side of the structure, and which is formed at least in a side surface region of the functional element by laminating a plurality of wiring insulating layers each including a wiring, the functional element built-in substrate being featured in that the electrode terminal and the back surface side of the wiring substrate are electrically connected to each other through the wiring of the laminated structure, and in that, in a pair of the wiring insulating layers included in the laminated structure and that are in contact with each other, the cross-sectional shape of the wiring in each of the wiring insulating layers, which cross-sectional shape is taken along the plane perpendicular to the extension direction of the wiring in the wiring insulating layer, has a relationship that the cross-sectional area of the wiring in the back surface side wiring insulating layer is larger than the cross-sectional area of the wiring in the front surface side wiring insulating layer.

摘要翻译： 本发明的目的是提出一种功能元件内置基板，其使功能元件的电极端子能够良好地连接到与功能元件的电极端子相反的一侧的背面，并且其可以是 小型化。 根据本发明，提供了一种功能元件内置基板，其包括在功能元件的一个表面侧上设置有电极端子的功能元件，以及包括功能元件嵌入其中的层叠结构的布线基板 所述功能元件的电极端子面向所述结构的前表面侧，并且通过层叠多个布线绝缘层而形成在所述功能元件的至少侧面区域中，所述多个布线绝缘层包括布线， 其特征在于，布线基板的电极端子和背面侧通过层叠结构的布线电连接，并且其中，在层叠结构中包括的一对布线绝缘层和 彼此接触，每个布线绝缘中的布线的横截面形状 与布线绝缘层中的配线的延伸方向垂直的平面截取的截面形状的层具有这样的关系：背面侧配线绝缘层中的布线的截面积大于 表面侧配线绝缘层中的配线的截面积。

公开(公告)号：US08810008B2

公开(公告)日：2014-08-19

申请号：US13635621

申请日：2011-01-25

申请人： Kentaro Mori ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Kikuchi ,  Yoshiki Nakashima ,  Daisuke Ohshima

发明人： Kentaro Mori ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Kikuchi ,  Yoshiki Nakashima ,  Daisuke Ohshima

IPC分类号： H01L29/40 ,  H01L21/4763

CPC分类号： H05K1/185 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/25 ,  H01L24/82 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/16225 ,  H01L2224/18 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/3511 ,  H05K1/187 ,  H05K3/4602 ,  H05K2201/10674 ,  H05K2203/1469 ,  H01L2924/00

摘要： A semiconductor element-embedded substrate includes a semiconductor element; a chip component; a peripheral insulating layer covering at least the outer circumferential side surfaces thereof; an upper surface-side wiring line provided on the upper surface side of the substrate; and a lower surface-side wiring line provided on the lower surface side of the substrate. The built-in semiconductor element includes a terminal on the upper surface side thereof, and this terminal is electrically connected to the upper surface-side wiring line. The built-in chip component includes an upper surface-side terminal electrically connected to the upper surface-side wiring line; a lower surface-side terminal electrically connected to the lower surface-side wiring line; and a through-chip via penetrating through the chip component to connect the upper surface-side terminal and the lower surface-side terminal.

摘要翻译： 半导体元件嵌入式基板包括半导体元件; 芯片组件; 外周绝缘层，至少覆盖其外周侧面; 设置在基板的上表面侧的上表面侧配线; 以及设置在基板的下表面侧的下表面侧配线。 内置半导体元件包括在其上表面侧的端子，该端子与上表面侧布线电连接。 内置的芯片部件包括电连接到上表面侧布线的上表面侧端子; 电连接到下表面侧布线的下表面侧端子; 以及穿过芯片部件的贯通芯片，以连接上表面侧端子和下表面侧端子。

公开(公告)号：US20130026632A1

公开(公告)日：2013-01-31

申请号：US13639735

申请日：2011-02-22

申请人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Kentaro Mori ,  Yoshiki Nakashima

发明人： Katsumi Kikuchi ,  Shintaro Yamamichi ,  Hideya Murai ,  Kentaro Mori ,  Yoshiki Nakashima

IPC分类号： H01L23/48

CPC分类号： H05K1/185 ,  H01L21/6835 ,  H01L23/481 ,  H01L23/50 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/19 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/24225 ,  H01L2224/24226 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/73267 ,  H01L2224/83 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/19041 ,  H05K1/0271 ,  H05K1/186 ,  H05K3/4602 ,  H05K2201/10674 ,  H05K2203/1469 ,  H01L2224/81 ,  H01L2924/00015 ,  H01L2224/85 ,  H01L2224/82 ,  H01L2224/45 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/48

摘要： A wiring substrate in which a semiconductor element is built includes a semiconductor element; a peripheral insulating layer covering at least an outer circumferential side surface of this semiconductor element; and an upper surface-side wiring line provided on the upper surface side of the wiring substrate. The semiconductor element includes an internal terminal electrically connected to the upper surface-side wiring line on the upper surface side of the semiconductor element. This internal terminal includes a first conductive part exposed out of an insulating surface layer of the semiconductor element; an adhesion layer on this first conductive part; and a second conductive part on this adhesion layer. The adhesion layer covers an exposed surface of the first conductive part, and is formed on a portion of the insulating surface layer around the exposed surface of the first conductive part, and the adhesion layer extends around the outer side of an outer edge of this second conductive part so as to surround the second conductive part.

摘要翻译： 构成半导体元件的布线基板包括半导体元件; 覆盖该半导体元件的至少外周侧表面的外围绝缘层; 以及设置在布线基板的上表面侧的上表面侧布线。 半导体元件包括电连接到半导体元件的上表面侧的上表面侧布线的内部端子。 该内部端子包括从半导体元件的绝缘表面层露出的第一导电部件; 在该第一导电部分上的粘附层; 和该粘合层上的第二导电部分。 粘合层覆盖第一导电部分的暴露表面，并且形成在第一导电部分的暴露表面周围的绝缘表面层的一部分上，并且粘合层围绕该第二导电部分的外边缘的外侧延伸 导电部件以包围第二导电部件。

公开(公告)号：US20130009325A1

公开(公告)日：2013-01-10

申请号：US13635621

申请日：2011-01-25

申请人： Kentaro Mori ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Kikuchi ,  Yoshiki Nakashima ,  Daisuke Ohshima

发明人： Kentaro Mori ,  Shintaro Yamamichi ,  Hideya Murai ,  Katsumi Kikuchi ,  Yoshiki Nakashima ,  Daisuke Ohshima

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L21/768

CPC分类号： H05K1/185 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/25 ,  H01L24/82 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/16225 ,  H01L2224/18 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/15192 ,  H01L2924/3511 ,  H05K1/187 ,  H05K3/4602 ,  H05K2201/10674 ,  H05K2203/1469 ,  H01L2924/00

摘要： A semiconductor element-embedded substrate includes a semiconductor element; a chip component; a peripheral insulating layer covering at least the outer circumferential side surfaces thereof; an upper surface-side wiring line provided on the upper surface side of the substrate; and a lower surface-side wiring line provided on the lower surface side of the substrate. The built-in semiconductor element includes a terminal on the upper surface side thereof, and this terminal is electrically connected to the upper surface-side wiring line. The built-in chip component includes an upper surface-side terminal electrically connected to the upper surface-side wiring line; a lower surface-side terminal electrically connected to the lower surface-side wiring line;and a through-chip via penetrating through the chip component to connect the upper surface-side terminal and the lower surface-side terminal.

摘要翻译： 半导体元件嵌入式基板包括半导体元件; 芯片组件; 外周绝缘层，至少覆盖其外周侧面; 设置在基板的上表面侧的上表面侧配线; 以及设置在基板的下表面侧的下表面侧配线。 内置半导体元件包括在其上表面侧的端子，该端子与上表面侧布线电连接。 内置的芯片部件包括电连接到上表面侧布线的上表面侧端子; 电连接到下表面侧布线的下表面侧端子; 以及穿过芯片部件的贯通芯片，以连接上表面侧端子和下表面侧端子。