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公开(公告)号：JPWO2014037996A1
公开(公告)日：2016-08-08
申请号：JP2014534065
申请日：2012-09-04
申请人： 三菱電機株式会社
CPC分类号： H01L24/05 , H01L23/498 , H01L24/01 , H01L24/03 , H01L24/08 , H01L24/11 , H01L24/16 , H01L24/48 , H01L24/73 , H01L2224/034 , H01L2224/0401 , H01L2224/04042 , H01L2224/05083 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/16113 , H01L2224/16245 , H01L2224/29101 , H01L2224/48091 , H01L2224/48247 , H01L2224/73251 , H01L2224/73265 , H01L2924/00014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01042 , H01L2924/01047 , H01L2924/01079 , H01L2924/07025 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/2064 , H01L2924/20641 , H01L2924/20642 , H01L2924/20643 , H01L2924/20644 , H01L2924/20645 , H01L2924/20646 , H01L2924/20647 , H01L2924/20648 , H01L2924/20649 , H01L2924/2065 , H01L2924/351 , H01L2924/00 , H01L2224/45099 , H01L2924/014 , H01L2924/00012 , H01L2224/45015 , H01L2924/207 , H01L2924/01201 , H01L2924/01014
摘要： 本願の発明にかかる半導体装置は、半導体素子と、該半導体素子の表面に形成された表面電極と、該表面電極上に、接合部と、該接合部と接しつつ該接合部を囲むように形成された応力緩和部とを有するように形成された金属膜と、該応力緩和部を避けて該接合部に接合されたはんだと、該はんだを介して該接合部に接合された外部電極と、を備えたことを特徴とする。
摘要翻译： 根据本发明的半导体器件被形成为围绕半导体元件，形成在半导体元件的表面上的表面电极，在所述表面上的电极，和连接，同时与接合部分接触的接合部分 形成为具有应力缓和部，其是金属膜，焊料键合到键合部分，以避免应力缓和部分，并通过焊料接合到所述接合部分的外部电极， 其特征在于，包括：a。
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公开(公告)号：JP5071925B2
公开(公告)日：2012-11-14
申请号：JP2006346047
申请日：2006-12-22
申请人： 田中電子工業株式会社
IPC分类号： H01L21/60
CPC分类号： C22C5/02 , H01L2224/05624 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/48624 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01021 , H01L2924/01027 , H01L2924/01028 , H01L2924/01033 , H01L2924/01038 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01057 , H01L2924/01063 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01327 , H01L2924/14 , H01L2924/20752 , H01L2924/01039 , H01L2924/01201 , H01L2924/01202 , H01L2924/00014 , H01L2924/00 , H01L2924/013 , H01L2924/00012
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3.发明专利
公开(公告)号：JP2010192497A
公开(公告)日：2010-09-02
申请号：JP2009032260
申请日：2009-02-16
发明人： NAITO MASAO
CPC分类号： C22C5/02 , B22D11/005 , H01L2224/43 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48511 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/0102 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/01046 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01063 , H01L2924/01064 , H01L2924/01079 , H01L2924/01082 , H01L2924/01204 , H01L2924/14 , H01L2924/20752 , H01L2924/0109 , H01L2924/01062 , H01L2924/0106 , H01L2924/01039 , H01L2924/01032 , H01L2924/01059 , H01L2924/01201 , H01L2924/01202 , H01L2924/01203 , H01L2924/01061 , H01L2924/01081 , H01L2924/013 , H01L2924/00 , H01L2924/01006 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a very thin wire for bonding which is stable, being suppressed for wire bending or leaning, and allowing electrode pads bonding with interval of ≤60 μm, with no special inspection or additional selection.
SOLUTION: Gold alloy thin wire for bonding contains Cu by 0.01-2.0 mass%, Pd by 0.01-1.0 mass%, at least one kind from among Zn, Al, Ga, In, Tl, Ge, and Sn by 0.0001-0.002 mass%, and at least one kind from among Ca, Be, Mg, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, and Gd by 0.0001-0.01 mass%, with remaining portion consisting of Au whose purity is 99.99 mass% or higher and inevitable impurities. In its manufacturing method, continuous molding is performed under the condition in which an interface relative movement speed between melt and solidified portion is 20 mm/min or faster.
COPYRIGHT: (C)2010,JPO&INPIT摘要翻译： 要解决的问题：提供一种非常细的接合线，其稳定，抑制线弯曲或倾斜，并且允许间隔≤60μm的电极焊盘接合，无需特别检查或附加选择。 解决方案：用于接合的金合金细线包含0.01-2.0质量％的Cu，0.01-1.0质量％的Cu，Zn，Al，Ga，In，Tl，Ge和Sn中的至少一种为0.0001 -0.002质量％，Ca，Be，Mg，Y，La，Ce，Pr，Nd，Pm，Sm，Eu和Gd中的至少一种为0.0001-0.01质量％，其余部分由Au组成 纯度为99.99质量％以上且不可避免的杂质。 在其制造方法中，在熔体与凝固部之间的界面相对移动速度为20mm / min以上的条件下进行连续成型。 版权所有（C）2010，JPO＆INPIT
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公开(公告)号：JPWO2006035803A1
公开(公告)日：2008-05-15
申请号：JP2006537768
申请日：2005-09-28
申请人： 田中電子工業株式会社
IPC分类号： H01L21/60
CPC分类号： C22C5/02 , B23K35/3013 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/48624 , H01L2224/48639 , H01L2224/85439 , H01L2924/00011 , H01L2924/01105 , H01L2924/01202 , H01L2924/01203 , H01L2924/01205 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1576 , H01L2924/181 , H01L2924/19043 , H01L2924/20751 , H01L2924/20752 , H01L2924/01046 , H01L2924/01014 , H01L2924/01063 , H01L2924/01004 , H01L2924/01058 , H01L2924/01064 , H01L2924/01012 , H01L2924/01039 , H01L2924/01057 , H01L2924/01078 , H01L2924/01201 , H01L2924/00014 , H01L2924/0102 , H01L2924/01066 , H01L2924/0103 , H01L2924/0105 , H01L2924/013 , H01L2924/00013 , H01L2924/00 , H01L2924/01028 , H01L2924/01404 , H01L2924/01006
摘要： 所望の強度を有し、接合性と経時安定性が良好で、圧着ボールの真円度と溶融ボールの真球度との向上した細径Au合金ボンディング・ワイヤを提供する。高純度Auに高純度のPd、Ptの少なくとも1種を合計で0.05〜2質量%含有するAu合金マトリックス中に、微量元素として、10〜100質量ppmのMgと、5〜100質量ppmのCeと、Be、Y、Gd、La、EuおよびSiのうちの少なくとも1種を、おのおのが5〜100質量ppmでかつBeからSiの合計で5〜100質量ppmとからなるもの、また、微量元素がMgと、Beと、Y、La、EuおよびSiのうちの少なくとも1種とからなるもの、さらにまた、微量元素が10〜100質量ppmのMgと、5〜30質量ppmのSiと、5〜30質量ppmのBeと、Ca、CeおよびSnの少なくとも1種を5〜30質量ppmとからなるものである。
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5.发明专利
公开(公告)号：JP3579603B2
公开(公告)日：2004-10-20
申请号：JP33546998
申请日：1998-11-26
发明人： ヘルクロッツ ギュンター , ジーモンス クリストフ , ロイエル ユルゲン , シュレプラー ルッツ , シー チョー ワイ
IPC分类号： C22C5/02
CPC分类号： C22C5/02 , H01L24/43 , H01L24/45 , H01L2224/05624 , H01L2224/43 , H01L2224/45015 , H01L2224/45144 , H01L2224/48624 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/0102 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01056 , H01L2924/01057 , H01L2924/01058 , H01L2924/01059 , H01L2924/0106 , H01L2924/01063 , H01L2924/01066 , H01L2924/01068 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01105 , H01L2924/14 , H01L2924/181 , H01L2924/19043 , H01L2924/20753 , H01L2924/01201 , H01L2924/01202 , H01L2924/01203 , H01L2924/01004 , H01L2924/013 , H01L2924/00013 , H01L2924/01061 , H01L2924/01062 , H01L2924/01064 , H01L2924/01065 , H01L2924/01067 , H01L2924/01069 , H01L2924/0107 , H01L2924/01071 , H01L2924/00 , H01L2924/01006
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公开(公告)号：JP3550812B2
公开(公告)日：2004-08-04
申请号：JP20388195
申请日：1995-07-18
申请人： 住友金属鉱山株式会社
发明人： 寿一 清水
CPC分类号： H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2924/00014 , H01L2924/01004 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01038 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01327 , H01L2924/01201 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2224/48 , H01L2924/00 , H01L2924/013 , H01L2924/01058 , H01L2924/0106 , H01L2924/01064 , H01L2924/01065 , H01L2924/01068 , H01L2924/01067 , H01L2924/01073 , H01L2924/0107 , H01L2924/01062 , H01L2924/01057 , H01L2924/01059 , H01L2924/01066 , H01L2924/01035 , H01L2924/01071 , H01L2924/00013 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a bonding wire which is high in mechanical strength and suitable for a multi-pin semiconductor device, wherein the bonding wire is used for electrically connecting an electrode located on a semiconductor element to an outer lead. SOLUTION: A bonding wire includes 0.01 to 8% by weight of one or more elements selected out of rare earth elements besides Au as a main component.
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公开(公告)号：JP2011192686A
公开(公告)日：2011-09-29
申请号：JP2010055276
申请日：2010-03-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： IKEDA YASUSHI , TOHIRA TOMOTAKE
IPC分类号： H01L21/60
CPC分类号： H01L24/46 , H01L23/24 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/85 , H01L25/072 , H01L2224/29111 , H01L2224/32225 , H01L2224/3303 , H01L2224/33181 , H01L2224/37026 , H01L2224/37147 , H01L2224/37655 , H01L2224/40091 , H01L2224/40225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/49111 , H01L2224/49505 , H01L2224/73265 , H01L2224/83801 , H01L2224/83805 , H01L2224/84205 , H01L2224/84801 , H01L2224/85 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/20751 , H01L2924/2076 , H01L2924/351 , H01L2924/00014 , H01L2224/78 , H01L2224/29101 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/83205 , H01L2924/01201 , H01L2924/01006
摘要： PROBLEM TO BE SOLVED: To provide a technology of connection wiring on an upper surface of a power semiconductor element having wire bonding with low electrical resistance and high reliability. SOLUTION: A metal conductor (for instance, Cu or a Cu alloy) having a low electrical resistance value and a high linear expansion coefficient is braided into a braided wire, and is connected using a conductive bonding material to a wiring connecting portion on the upper surface of the semiconductor element of the semiconductor device. Thus, strain of the conductive bonding material due to linear expansion of the conductor having the low electrical resistance and the high linear expansion coefficient is suppressed, and both low electrical resistance and high connecting reliability can be achieved. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译： 要解决的问题：提供具有低电阻和高可靠性的具有引线接合的功率半导体元件的上表面上的连接布线的技术。 解决方案：将具有低电阻值和高线性膨胀系数的金属导体（例如Cu或Cu合金）编织到编织线中，并且使用导电接合材料连接到布线连接部分 在半导体器件的半导体元件的上表面上。 因此，由于具有低电阻和高线性膨胀系数的导体的线性膨胀导致的导电接合材料的应变被抑制，并且可以实现低电阻和高连接可靠性。 版权所有（C）2011，JPO＆INPIT
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公开(公告)号：JP4293119B2
公开(公告)日：2009-07-08
申请号：JP2004336918
申请日：2004-11-22
申请人： 住友金属鉱山株式会社
发明人： 雅夫 内藤
IPC分类号： H01L21/60
CPC分类号： C22C5/02 , H01L2224/05624 , H01L2224/43 , H01L2224/43848 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/48624 , H01L2924/00011 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01027 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/14 , H01L2924/20752 , H01L2924/01039 , H01L2924/01032 , H01L2924/01201 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/00 , H01L2924/013 , H01L2924/00012
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公开(公告)号：JP2009114499A
公开(公告)日：2009-05-28
申请号：JP2007289091
申请日：2007-11-06
发明人： MURAI HIROSHI , CHIBA ATSUSHI , AMADA FUJIO
CPC分类号： C22C5/02 , B23K35/3013 , H01L24/02 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/85 , H01L2224/04042 , H01L2224/05624 , H01L2224/43 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45164 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48639 , H01L2224/78301 , H01L2224/78303 , H01L2224/78306 , H01L2224/85045 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85439 , H01L2224/859 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/0106 , H01L2924/0107 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01204 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/01071 , H01L2924/00014 , H01L2924/01201 , H01L2924/01202 , H01L2924/01203 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/20752 , H01L2924/00013 , H01L2924/01006
摘要： PROBLEM TO BE SOLVED: To eliminate the defective secondary junction caused by the deposition of additive element oxides in a high-purity gold bonding wire. SOLUTION: The bonding wire is made of an Au alloy composed of, by mass, 5-100 ppm Mg, 5-20 ppm In, 15-20 ppm Al, 5-20 ppm Yb and the balance ≥99.995% Au and further, contains 5-20 ppm Ca and one or more kinds among 5-20 ppm La, 5-20 ppm Lu, 5-100 ppm Sn and 5-100 ppm Sr, or further, may contain 0.01-1.2% Pd. Since additional element oxide deposited on the tip part of a capillary developed at the ball-forming time and at the first bonding time with fine electric discharge, is not accumulated by transfer to the wire at the secondary bonding time, the bonding wire containing these trace elements has no trouble caused by these accumulated pollutants. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译： 要解决的问题：为了消除由高纯度金键合线中的添加元素氧化物沉积引起的有缺陷的二次连结。 解决方案：接合线由以质量计的5-100ppm Mg，5-20ppm In，15-20ppm Al，5-20ppm Yb和余量≥99.995％Au组成的Au合金制成 并且还含有5-20ppm的Ca和5-20ppm的La，5-20ppm的Lu，5-100ppm的Sn和5-100ppm的Sr中的一种或多种，或者还可以含有0.01-1.2％的Pd。 由于在球形成时间和在第一次结合时由微细放电而在毛细管的尖端部分上沉积的附加元素氧化物在二次接合时不会通过转移到丝上而积累，所以含有这些痕迹的接合线 元素没有这些累积污染物引起的麻烦。 版权所有（C）2009，JPO＆INPIT
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公开(公告)号：JP4150752B1
公开(公告)日：2008-09-17
申请号：JP2007289091
申请日：2007-11-06
申请人： 田中電子工業株式会社
CPC分类号： C22C5/02 , B23K35/3013 , H01L24/02 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/78 , H01L24/85 , H01L2224/04042 , H01L2224/05624 , H01L2224/43 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45164 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48624 , H01L2224/48639 , H01L2224/78301 , H01L2224/78303 , H01L2224/78306 , H01L2224/85045 , H01L2224/85181 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85439 , H01L2224/859 , H01L2924/00011 , H01L2924/01005 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01021 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/0106 , H01L2924/0107 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01204 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/01071 , H01L2924/00014 , H01L2924/01201 , H01L2924/01202 , H01L2924/01203 , H01L2924/00 , H01L2924/00012 , H01L2924/013 , H01L2924/20752 , H01L2924/00013 , H01L2924/01006
摘要： 【課題】高純度金ボンディングワイヤにおいて添加元素酸化物の付着に起因するセカンド接合不良を解消する。
【解決手段】Mg５〜１００質量％、In５〜２０質量％、Al5〜20質量％、Yb５〜２０質量％、残部純度９９．９９５質量％以上の金合金であるボンディンググワイヤであり、さらに、Ca５〜２０質量％を加え、また、これらにおいて、La５〜２０質量％、Ｌｕ５〜２０質量％、Sn５〜１００質量％、Sr５〜１００質量％のうちの一種以上を添加し、或いは、さらにこれらの金合金において、Pd０．０１〜１．２質量％含有させた金合金ボンディングワイヤである。
これらの微量元素を含有するボンディングワイヤは、微小放電によるボール形成時及びファーストボンディング時に生じてキャピラリー先端に付着した添加元素酸化物がセカンドボンディング時にワイヤの転写されて蓄積しないため、これら蓄積汚染物質による障害が生じない。
【選択図】図１
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