SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SEMICONDUCTOR STRUCTURE
    1.
    发明申请
    SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SEMICONDUCTOR STRUCTURE 有权
    半导体结构和半导体结构的制作方法

    公开(公告)号:US20120171825A1

    公开(公告)日:2012-07-05

    申请号:US13412959

    申请日:2012-03-06

    Abstract: In contrast to a conventional planar CMOS technique in design and fabrication for a field-effect transistor (FET), the present invention provides an SGT CMOS device formed on a conventional substrate using various crystal planes in association with a channel type and a pillar shape of an FET, without a need for a complicated device fabrication process. Further, differently from a design technique of changing a surface orientation in each planar FET, the present invention is designed to change a surface orientation in each SGT to achieve improvement in carrier mobility. Thus, a plurality of SGTs having various crystal planes can be formed on a common substrate to achieve a plurality of different carrier mobilities so as to obtain desired performance.

    Abstract translation: 与用于场效应晶体管(FET)的设计和制造中的常规平面CMOS技术相反,本发明提供了一种SGT CMOS器件,其形成在常规基板上,该传统基板使用与通道类型和柱形 FET,而不需要复杂的器件制造工艺。 此外,与改变每个平面FET中的表面取向的设计技术不同,本发明被设计为改变每个SGT中的表面取向以实现载流子迁移率的改善。 因此,可以在公共基板上形成具有各种晶面的多个SGT,以实现多种不同的载流子迁移率,从而获得期望的性能。

    METHOD FOR FABRICATING FLEXIBLE ELECTRONIC DEVICE AND ELECTRONIC DEVICE FABRICATED THEREBY
    3.
    发明申请
    METHOD FOR FABRICATING FLEXIBLE ELECTRONIC DEVICE AND ELECTRONIC DEVICE FABRICATED THEREBY 审中-公开
    制造柔性电子器件的方法及其制造的电子器件

    公开(公告)号:US20120115259A1

    公开(公告)日:2012-05-10

    申请号:US13292772

    申请日:2011-11-09

    CPC classification number: H01M10/052 H01M10/058

    Abstract: Disclosed are a method for fabricating a flexible electronic device using laser lift-off and an electronic device fabricated thereby. More particularly, disclosed are a method for fabricating a flexible electronic device using laser lift-off allowing for fabrication of a flexible electronic device in an economical and stable way by separating a device such as a secondary battery fabricated on a sacrificial substrate using laser, and an electronic device fabricated thereby.

    Abstract translation: 公开了一种使用激光剥离制造柔性电子装置的方法和由此制造的电子装置。 更具体地,公开了一种使用激光剥离制造柔性电子器件的方法,其通过使用激光器分离诸如在牺牲基板上制造的二次电池的器件,以经济和稳定的方式制造柔性电子器件,以及 由此制造的电子设备。

    Solar Cell and Method of Manufacturing the Same
    4.
    发明申请
    Solar Cell and Method of Manufacturing the Same 审中-公开
    太阳能电池及其制造方法

    公开(公告)号:US20110061710A1

    公开(公告)日:2011-03-17

    申请号:US12875807

    申请日:2010-09-03

    Abstract: Provided are a solar cell and a method of manufacturing the same. The method of manufacturing the solar cell includes stacking a solar cell device layer containing GaN on a sacrificial substrate, etching the solar cell device layer to expose the sacrificial substrate, thereby forming one or more solar cell devices comprising the solar cell device layer, anisotropically etching the exposed sacrificial substrate, contacting the solar cell devices to a stamping processor to remove the solar cell devices from the sacrificial substrate, and transferring the solar cell devices onto a receiving substrate. A high temperature semiconductor process may be performed on a substrate such as a silicon substrate to transfer the solar cell devices onto the substrate, thereby manufacturing flexible solar cells. Also, a large number of solar cells may be excellently aligned on a large area. In addition, economical solar cells may be manufactured.

    Abstract translation: 提供一种太阳能电池及其制造方法。 制造太阳能电池的方法包括在牺牲基板上堆叠含有GaN的太阳能电池器件层,蚀刻太阳能电池器件层以暴露牺牲基板,从而形成包括太阳能电池器件层的各个异相蚀刻的一个或多个太阳能电池器件 暴露的牺牲衬底,将太阳能电池器件接触到冲压处理器以从牺牲衬底移除太阳能电池器件,并将太阳能电池器件转移到接收衬底上。 可以在诸如硅衬底的衬底上执行高温半导体工艺以将太阳能电池器件转移到衬底上,从而制造柔性太阳能电池。 此外,大量的太阳能电池可以在大面积上优良地对准。 此外,可以制造经济的太阳能电池。

    MANUFACTURING METHOD FOR FLEXIBLE DEVICE AND FLEXIBLE DEVICE MANUFACTURED BY THE SAME
    5.
    发明申请
    MANUFACTURING METHOD FOR FLEXIBLE DEVICE AND FLEXIBLE DEVICE MANUFACTURED BY THE SAME 审中-公开
    柔性装置的制造方法及其制造的柔性装置

    公开(公告)号:US20130082361A1

    公开(公告)日:2013-04-04

    申请号:US13396302

    申请日:2012-02-14

    Abstract: Provided are a method of manufacturing a flexible device and a flexible device manufactured thereby.The method of manufacturing a flexible device according to the present disclosure includes: fabricating a device on an upper silicon layer of a silicon-on-insulator (SOI) substrate comprising a lower silicon layer, an insulation layer and the upper silicon layer stacked sequentially; adhering a second silicon substrate to the upper silicon layer; removing the lower silicon layer; transferring the upper silicon layer with the device fabricated to a flexible substrate using the second silicon substrate; and stacking a passivation layer on the flexible substrate, wherein the device is located at a position of a neutral mechanical plane of the entire device as the passivation layer is stacked.

    Abstract translation: 提供一种制造柔性装置的方法和由此制造的柔性装置。 根据本公开的制造柔性器件的方法包括:在绝缘体上硅(SOI)衬底的上硅层上制造器件,其包括依次堆叠的下硅层,绝缘层和上硅层; 将第二硅衬底粘附到所述上硅层; 去除下硅层; 使用所述第二硅衬底将所述上硅层与所制造的器件转移到柔性衬底; 以及在所述柔性基板上堆叠钝化层,其中当所述钝化层被堆叠时,所述器件位于整个器件的中性机械平面的位置。

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