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    Semiconductor layering sequence for generating visible light and light emitting diode
    1.
    发明授权
    Semiconductor layering sequence for generating visible light and light emitting diode 有权

    公开(公告)号：US10134960B2

    公开(公告)日：2018-11-20

    申请号：US15533006

    申请日：2015-12-03

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Dominik Scholz ,  Martin Mandl ,  Ion Stoll ,  Martin Strassburg ,  Barbara Huckenbeck

    IPC: H01L33/08 ,  H01L33/50 ,  H01L33/16 ,  H01L33/24

    Abstract: In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. There is an active zone (22) between the core (21) and the core shell (23) for generating a primary radiation by means of electroluminescence. A respective conversion shell (4) is placed onto the semiconductor columns (2), which conversion shell at least partially interlockingly surrounds the corresponding core shell (23), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells (4) which are applied to adjacent semiconductor columns (2), only incompletely fill an intermediate space between the semiconductor columns (2).

    METHOD OF PRODUCING A MULTICOLOR LED DISPLAY
    2.
    发明申请
    METHOD OF PRODUCING A MULTICOLOR LED DISPLAY 有权
    制造多媒体LED显示器的方法

    公开(公告)号：US20170040503A1

    公开(公告)日：2017-02-09

    申请号：US15297336

    申请日：2016-10-19

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alexander F. Pfeuffer ,  Martin Mandl

    IPC: H01L33/50 ,  H01L27/15 ,  H01L33/00 ,  H01L33/58

    CPC classification number: H01L33/504 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/58 ,  H01L2933/0041 ,  H01L2933/0058

    Abstract: A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.

    Abstract translation: 一种方法产生多色LED显示器，该显示器包括具有多个像素的LED发光单元。 第一子像素，第二子像素和第三子像素包含发射第一颜色的辐射的LED芯片，其中将辐射转换成第二颜色的第一转换层布置在第二子像素的至少上方，以及转换辐射的第二转换层 在第三子像素的上方配置第三颜色。 执行至少一个处理步骤，其中在像素上方的至少一个限定区域中施加或去除第一或第二转换层，其中一部分LED芯片是电操作的，并且其中该区域由辐射 由所操作的LED芯片产生的热量或产生的电场。

    Method of producing a multicolor LED display
    4.
    发明授权
    Method of producing a multicolor LED display 有权
    制造多色LED显示屏的方法

    公开(公告)号：US09515232B2

    公开(公告)日：2016-12-06

    申请号：US14414744

    申请日：2013-07-23

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Alexander F. Pfeuffer ,  Martin Mandl

    IPC: H01L33/50 ,  H01L27/15

    CPC classification number: H01L33/504 ,  H01L27/156 ,  H01L33/0095 ,  H01L33/58 ,  H01L2933/0041 ,  H01L2933/0058

    Abstract: A method produces a multicolor LED display, the display including an LED luminous unit having a multiplicity of pixels. First subpixels, second subpixel and third subpixels contain an LED chip that emits radiation of a first color, wherein a first conversion layer that converts the radiation into a second color is arranged at least above the second subpixels and a second conversion layer that converts the radiation into a third color is arranged above the third subpixels. At least one process step is carried out in which the first or second conversion layer is applied or removed in at least one defined region above the pixels, wherein a portion of the LED chips is electrically operated, and wherein the region is defined by the radiation generated by the operated LED chips, generated heat or a generated electric field.

    Abstract translation: 一种方法产生多色LED显示器，该显示器包括具有多个像素的LED发光单元。 第一子像素，第二子像素和第三子像素包含发射第一颜色的辐射的LED芯片，其中将辐射转换成第二颜色的第一转换层布置在第二子像素的至少上方，以及转换辐射的第二转换层 在第三子像素的上方配置第三颜色。 执行至少一个处理步骤，其中在像素上方的至少一个限定区域中施加或去除第一或第二转换层，其中一部分LED芯片是电操作的，并且其中该区域由辐射 由所操作的LED芯片产生的热量或产生的电场。

    METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT
    5.
    发明申请
    METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT, AND OPTOELECTRONIC SEMICONDUCTOR COMPONENT 有权
    生产光电半导体元件的方法和光电子半导体元件

    公开(公告)号：US20150279903A1

    公开(公告)日：2015-10-01

    申请号：US14434760

    申请日：2013-10-01

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Koelper ,  Alexander F. Pfeuffer ,  Patrick Rode

    IPC: H01L27/15 ,  H01L33/24 ,  H01L33/00

    CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/24 ,  H01L33/385 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands (4) having a semiconductor layer sequence (3) on a growth substrate (2), wherein the islands (4) each comprise at least one active zone (33) of the semiconductor layer sequence (3), and an average diameter of the islands (4), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 μm inclusive, B) producing a separating layer (5) on a side of the islands (4) facing the growth substrate (2), wherein the separating layer (5) surrounds the islands (4) all around, as viewed in a top view of the growth substrate (2), C) attaching a carrier substrate (6) to a side of the islands (4) facing away from the growth substrate (2), and D) detaching the growth substrate (2) from the islands (4), wherein at least a part of the separating layer (5) is destroyed and/or at least temporarily softened during the detachment.

    Abstract translation: 在该方法的至少一个实施例中，所述方法包括以下步骤：A）在生长衬底（2）上产生具有半导体层序列（3）的辐射活性岛（4），其中岛（4）各自包括 半导体层序列（3）的至少一个活性区域（33）和从生长衬底的顶视图观察的岛状物（4）的平均直径为50nm-10μm，包括B， ）在面向生长衬底（2）的岛状物（4）的一侧上产生分离层（5），其中分离层（5）围绕生长的顶视图中的所有岛（4）周围 衬底（2），C）将载体衬底（6）附接到所述岛（4）背离所述生长衬底（2）的一侧，以及D）将所述生长衬底（2）从所述岛（4）上分离， 其中分离层（5）的至少一部分在分离期间被破坏和/或至少暂时软化。

    OPTOELECTRONIC SEMICONDUCTOR CHIP
    7.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR CHIP 有权
    光电子半导体芯片

    公开(公告)号：US20160133794A1

    公开(公告)日：2016-05-12

    申请号：US14987905

    申请日：2016-01-05

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Kölper ,  Alexander F. Pfeuffer ,  Patrick Rode

    IPC: H01L33/44 ,  H01L33/14 ,  H01L27/15 ,  H01L33/20 ,  H01L33/60 ,  H01L33/32

    CPC classification number: H01L33/44 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

    Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions arranged at a distance from one another, and a continuous current spreading layer, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the current spreading layer covers all cover layers of the active region.

    Abstract translation: 光电子半导体芯片包括彼此间隔一定距离的多个有源区和连续电流扩散层，其中至少一个有源区具有主延伸方向，有源区中的一个具有形成有 所述有源区具有至少在所述有源区的主延伸方向的横向方向上至少覆盖所述芯区的有源层，所述有源区具有形成有第二半导体材料并覆盖所述有源区的覆盖层 至少在相对于有源区域的主延伸方向横向的方向上，并且电流扩展层覆盖有源区域的所有覆盖层。

    Radiation emitting or receiving optoelectronic semiconductor chip
    9.
    发明授权
    Radiation emitting or receiving optoelectronic semiconductor chip 有权
    辐射发射或接收光电半导体芯片

    公开(公告)号：US09257611B2

    公开(公告)日：2016-02-09

    申请号：US14362155

    申请日：2012-11-27

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin Mandl ,  Martin Strassburg ,  Christopher Kölper ,  Alexander F. Pfeuffer ,  Patrick Rode

    IPC: H01L29/18 ,  H01L33/44 ,  H01L33/18 ,  H01L33/24 ,  H01L27/15 ,  H01L33/60 ,  H01L33/08 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46

    CPC classification number: H01L33/44 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/60

    Abstract: An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer.

    Abstract translation: 光电子半导体芯片包括彼此间隔设置的多个有源区和布置在多个有源区的下侧的反射层，其中至少一个有源区具有主延伸方向， 所述有源区具有形成有第一半导体材料的芯区，所述有源区具有有源层，至少在相对于所述有源区的主延伸方向横向的方向上覆盖所述芯区，所述有源区具有覆盖层 形成有第二半导体材料，并且至少在相对于有源区的主延伸方向横向的方向上覆盖有源层，并且反射层反射在有源层中操作期间产生的电磁辐射。

    Optoelectronic semiconductor chip
    10.
    发明授权
    Optoelectronic semiconductor chip 有权
    光电半导体芯片

    公开(公告)号：US09214600B2

    公开(公告)日：2015-12-15

    申请号：US14382286

    申请日：2013-02-20

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin Mandl ,  Martin Straβburg ,  Christopher Kölper ,  Alexander Pfeuffer ,  Patrick Rode ,  Johannes Ledig ,  Richard Neumann ,  Andreas Waag

    IPC: H01L33/00 ,  H01L33/08 ,  H01L33/18 ,  H01L33/42 ,  H01L33/62 ,  H01L33/38

    CPC classification number: H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01L33/385 ,  H01L33/42 ,  H01L33/50 ,  H01L33/62 ,  H01L2933/0016

    Abstract: An optoelectronic semiconductor chip includes a number active regions that are arranged at a distance from each other and a substrate that is arranged on an underside of the active regions. One of the active regions has a main extension direction. The active region has a core region that is formed using a first semiconductor material. The active region has an active layer that covers the core region at least in directions perpendicular to the main extension direction of the active region. The active region has a cover layer that is formed using a second semiconductor material and covers the active layer at least in directions perpendicular to the main extension direction of the active region.

    Abstract translation: 光电子半导体芯片包括彼此间隔一定距离设置的多个有源区和布置在有源区的下侧的衬底。 其中一个活跃区域有一个主要的延伸方向。 有源区具有使用第一半导体材料形成的芯区。 有源区域具有至少在垂直于有源区域的主延伸方向的方向上覆盖芯区域的有源层。 有源区具有使用第二半导体材料形成的覆盖层，并且至少在垂直于有源区的主延伸方向的方向上覆盖有源层。

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