公开(公告)号：US20140264383A1

公开(公告)日：2014-09-18

申请号：US14213452

申请日：2014-03-14

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Ryoichi KAJIWARA ,  Takuya NAKAJO ,  Katsuo ARAI ,  Yuichi YATO ,  Hiroi OKA ,  Hiroshi HOZOJI

IPC: H01L23/49 ,  H01L29/20 ,  H01L21/50 ,  H01L29/16

CPC classification number: H01L23/49 ,  H01L21/50 ,  H01L23/293 ,  H01L23/295 ,  H01L23/3107 ,  H01L23/3192 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49582 ,  H01L23/562 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L29/1608 ,  H01L29/2003 ,  H01L2224/0381 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29118 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29294 ,  H01L2224/29439 ,  H01L2224/2949 ,  H01L2224/3011 ,  H01L2224/3201 ,  H01L2224/32013 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45147 ,  H01L2224/45155 ,  H01L2224/45565 ,  H01L2224/45616 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48997 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/83055 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/8592 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00011 ,  H01L2924/10272 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2924/06 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/01013 ,  H01L2924/01051 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/83205

Abstract: A semiconductor device includes a die pad, an SiC chip mounted on the die pad, a porous first sintered Ag layer bonding the die pad and the SiC chip, and a reinforcing resin portion covering a surface of the first sintered Ag layer and formed in a fillet shape. The semiconductor device further includes a source lead electrically connected to a source electrode of the SiC chip, a gate lead electrically connected to a gate electrode, a drain lead electrically connected to a drain electrode, and a sealing body which covers the SiC chip, the first sintered Ag layer, and a part of the die pad, and the reinforcing resin portion covers a part of a side surface of the SiC chip.

Abstract translation: 半导体器件包括芯片焊盘，安装在芯片焊盘上的SiC芯片，接合芯片焊盘和SiC芯片的多孔第一烧结Ag层，以及覆盖第一烧结Ag层表面的增强树脂部分， 圆角形状。 半导体器件还包括电连接到SiC芯片的源电极的源极引线，电连接到栅电极的栅极引线，电连接到漏电极的漏极引线和覆盖SiC芯片的密封体， 第一烧结Ag层和芯片焊盘的一部分，并且增强树脂部分覆盖SiC芯片的侧表面的一部分。

公开(公告)号：US20130071971A1

公开(公告)日：2013-03-21

申请号：US13677856

申请日：2012-11-15

Applicant: Renesas Electronics Corporation

Inventor： Ryoichi KAJIWARA ,  Shigehisa MOTOWAKI ,  Kazutoshi ITO ,  Toshiaki ISHII ,  Katsuo ARAI ,  Takuya NAKAJO ,  Hidemasa KAGII

IPC: H01L21/56

CPC classification number: H01L21/56 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/29347 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48747 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/83855 ,  H01L2224/83856 ,  H01L2224/8392 ,  H01L2224/83951 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/85447 ,  H01L2224/8592 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/05432 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01032 ,  H01L2924/3512 ,  H01L2224/48744

Abstract: In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

Abstract translation: 在半导体器件的结构中，Si芯片和金属引线框通过金属接合，通过具有三维网状结构的高导电性金属的多孔接合层，使用Ag作为接合材料，以及含有 在与聚合物树脂接触的半导体组件的表面上形成氧化锌或氧化铝。 以这种方式，通过与主要由Ag形成的多孔结构的接合层的接合，可以降低Si片的热应力负荷，并且可以提高接合层本身的疲劳寿命。 此外，由于通过锚固效应可以提高聚合物树脂对膜的粘附性，可以防止接合部发生裂纹，从而可以提供高可靠性的无铅半导体器件。

公开(公告)号：US20130228907A1

公开(公告)日：2013-09-05

申请号：US13768509

申请日：2013-02-15

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Takuya NAKAJO ,  Masaki TAMURA ,  Yasushi TAKAHASHI ,  Keiichi OKAWA ,  Ryoichi KAJIWARA ,  Sigehisa MOTOWAKI ,  Hiroshi HOZOUJI

IPC: H01L21/56 ,  H01L23/28

CPC classification number: H01L21/56 ,  H01L23/28 ,  H01L23/3107 ,  H01L23/49513 ,  H01L23/49524 ,  H01L23/49548 ,  H01L23/49562 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37124 ,  H01L2224/37139 ,  H01L2224/37147 ,  H01L2224/40249 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/4903 ,  H01L2224/49171 ,  H01L2224/49505 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/83439 ,  H01L2224/8392 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/8492 ,  H01L2224/8592 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01082

Abstract: Conventional surface roughening plating technology cannot always improve the adhesion between a leadframe and a plating film and it depends on the material used for surface roughening plating. Conventional surface roughening technology by etching can only be used for leadframes made of limited materials. Improved adhesion cannot therefore be achieved between a metal member such as leadframe and a sealing resin.A manufacturing method of a semiconductor device according to one embodiment is to carry out resin sealing using a metal member such as leadframe which has been subjected to alloying treatment of a base material and Zn plated on the surface thereof.

Abstract translation: 常规的表面粗糙化电镀技术不能总是提高引线框和镀膜之间的粘合性，并且取决于用于表面粗糙化电镀的材料。 通过蚀刻的常规表面粗糙化技术只能用于由有限材料制成的引线框架。 因此，在诸如引线框架的金属构件和密封树脂之间不能实现改进的附着。 根据一个实施例的半导体器件的制造方法是使用已经经过基材的合金化处理的锌引线框架和其表面上镀Zn的金属构件进行树脂密封。