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    Multiple-Gate Transistors with Reverse T-Shaped Fins
    96.
    发明申请
    Multiple-Gate Transistors with Reverse T-Shaped Fins 有权
    具有反向T形鳍的多栅极晶体管

    公开(公告)号：US20100163842A1

    公开(公告)日：2010-07-01

    申请号：US12345332

    申请日：2008-12-29

    Applicant: Li-Shyue Lai ,  Jing-Cheng Lin

    Inventor： Li-Shyue Lai ,  Jing-Cheng Lin

    IPC: H01L29/15 ,  H01L21/20

    CPC classification number: H01L29/785 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66795

    Abstract: A method of forming an integrated circuit structure includes forming a first insulation region and a second insulation region in a semiconductor substrate and facing each other; and forming an epitaxial semiconductor region having a reversed T-shape. The epitaxial semiconductor region includes a horizontal plate including a bottom portion between and adjoining the first insulation region and the second insulation region, and a fin over and adjoining the horizontal plate. The bottom of the horizontal plate contacts the semiconductor substrate. The method further includes forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin; and forming a gate electrode over the gate dielectric.

    Abstract translation: 形成集成电路结构的方法包括：在半导体衬底中形成第一绝缘区域和第二绝缘区域并彼此面对; 以及形成具有反向T形的外延半导体区域。 外延半导体区域包括水平板，该水平板包括在第一绝缘区域和第二绝缘区域之间并邻接第一绝缘区域之间的底部，以及在水平板上并邻接的鳍状物。 水平板的底部接触半导体衬底。 该方法还包括在鳍的顶表面和至少顶部的顶部形成栅电介质; 以及在所述栅极电介质上形成栅电极。

    Composite barrier layer
    97.
    发明授权
    Composite barrier layer 有权
    复合阻挡层

    公开(公告)号：US07453149B2

    公开(公告)日：2008-11-18

    申请号：US11024916

    申请日：2004-12-28

    Applicant: Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

    Inventor： Cheng-Lin Huang ,  Ching-Hua Hsieh ,  Hsien-Ming Lee ,  Shing-Chyang Pan ,  Chao-Hsien Peng ,  Li-Lin Su ,  Jing-Cheng Lin ,  Shao-Lin Shue ,  Mong-Song Liang

    IPC: H01L23/48

    CPC classification number: H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  Y10S438/927

    Abstract: A composite barrier layer provides superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer are generally disposed to form boundaries with dielectric materials and crystalline layers are generally disposed to form boundaries with conductive materials such as interconnect materials.

    Abstract translation: 当复合阻挡层延伸穿过整个半导体器件时，复合阻挡层为介电材料和导电材料提供优异的阻挡质量和优异的粘合性能。 复合阻挡层可以形成在其设置在两个导电层之间的区域中，并且在其布置在导电层和电介质材料之间的区域中。 复合阻挡层可以由各种多个层组成，并且形成复合阻挡层的层的布置可以随着阻挡层在装置的不同部分延伸而不同。 复合阻挡层的非晶层通常设置成与电介质材料形成边界，并且通常设置结晶层以与诸如互连材料的导电材料形成边界。

    Atomic layer deposition tantalum nitride layer to improve adhesion between a copper structure and overlying materials
    99.
    发明授权
    Atomic layer deposition tantalum nitride layer to improve adhesion between a copper structure and overlying materials 有权
    原子层沉积氮化钽层，以提高铜结构和上覆材料之间的粘附力

    公开(公告)号：US07202162B2

    公开(公告)日：2007-04-10

    申请号：US10420311

    申请日：2003-04-22

    Applicant: Jing-Cheng Lin ,  Chao-Hsien Peng ,  Shau Lin Shue ,  Mong Song Liang

    Inventor： Jing-Cheng Lin ,  Chao-Hsien Peng ,  Shau Lin Shue ,  Mong Song Liang

    IPC: H01L21/4763

    CPC classification number: H01L21/76849 ,  H01L21/28562

    Abstract: A process for improving the adhesion between an underlying copper structure, and overlying materials and structures, has been developed. The process features formation of a tantalum nitride layer on a copper structure, wherein the copper structure is located in a damascene type opening. To obtain the maximum adhesion benefit the tantalum nitride layer is formed via an atomic deposition layer procedure, performed at specific deposition conditions. The adhesion between the underlying copper structure and overlying materials such as a silicon nitride etch stop layer, as well the adhesion between the lower level copper structure and overlying upper level metal interconnect structures, is improved as a result of the presence of the atomic layer deposited tantalum nitride layer.

    Abstract translation: 已经开发了用于改善底层铜结构和上覆材料和结构之间的粘合性的方法。 该方法特征是在铜结构上形成氮化钽层，其中铜结构位于镶嵌型开口中。 为了获得最大的附着效益，通过在特定沉积条件下进行的原子沉积层程序形成氮化钽层。 底层铜结构和上覆材料（例如氮化硅蚀刻停止层）之间的粘附以及下层铜结构和上层金属互连结构之间的粘附性得到改善，原因在于沉积的原子层的存在 氮化钽层。

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