公开(公告)号：US11901179B2

公开(公告)日：2024-02-13

申请号：US17509290

申请日：2021-10-25

Applicant: ASM IP Holding B.V.

Inventor： John Tolle ,  Robert Vyne

IPC: H01L21/306 ,  H01L21/02 ,  H01J37/32 ,  C23C16/24 ,  C23C16/455 ,  C23C16/02

CPC classification number: H01L21/02532 ,  C23C16/0245 ,  C23C16/24 ,  C23C16/455 ,  H01J37/32449 ,  H01J37/32899 ,  H01L21/0262 ,  H01L21/02576 ,  H01L21/02579 ,  H01J37/32357 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method for forming a layer on a substrate includes providing a substrate in a reactor of a semiconductor processing system, the reactor having a divider separating an upper chamber from a lower chamber and a substrate holder therein, the substrate having upper and lower surfaces. The wafer is positioned within the reactor using the substrate holder such that the upper surface bounds the upper chamber, a silicon-containing gas is flowed through the upper chamber to deposit a layer of the upper surface, and a halogen-containing gas is flowed through the lower chamber to etch a deposited film on at least one wall bounding the lower chamber while flowing the silicon-containing gas through the upper chamber. Semiconductor processing systems are also described.

公开(公告)号：US20240019879A1

公开(公告)日：2024-01-18

申请号：US18351150

申请日：2023-07-12

Applicant: ASM IP Holding, B.V.

Inventor： Glenn Holbrook

IPC: G05D7/06

CPC classification number: G05D7/0647

Abstract: A flow control arrangement is provided including a housing seating inlet and outlet conduits is provided. An isolation valve is arranged within the housing and is fluidly coupled to the inlet conduit. A first flow switch with a first shutoff trigger is arranged within the housing and fluidly couples the isolation valve to the outlet conduit. A second flow switch with a second shutoff trigger is arranged outside of the housing and is fluidly separated from the first flow switch. A controller operably connects the first and second flow switches to the isolation valve to close the isolation valve when (a) flow rate of a first fluid traversing the first flow switch is greater than the first shutoff trigger, or (b) flow rate of a second fluid traversing the second flow switch is less than the second shutoff trigger. Semiconductor processing systems and flow control methods are also described.

公开(公告)号：US20240014033A1

公开(公告)日：2024-01-11

申请号：US18218221

申请日：2023-07-05

Applicant: ASM IP Holding B.V.

Inventor： Hiroshi Kou ,  Hideaki Fukuda

IPC: H01L21/02 ,  C23C16/34

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  C23C16/345 ,  H01L21/0228 ,  H01L21/02274

Abstract: Methods of depositing material onto a surface of a substrate. Exemplary methods include flowing a gas-phase precursor within the reaction chamber, condensing the precursor onto the surface of the substrate to form condensed material, and curing the condensed material to transform the condensed material to cured material. The step of curing can be a plasma process and can include use of a reactant.

公开(公告)号：US20240003009A1

公开(公告)日：2024-01-04

申请号：US18346608

申请日：2023-07-03

Applicant: ASM IP Holding, B.V

Inventor： Ivo Raaijmakers ,  Theodorus G.M. Oosterlaken

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67

CPC classification number: C23C16/45553 ,  C23C16/4412 ,  H01L21/67017 ,  C23C16/45544 ,  C23C16/45591

Abstract: A semiconductor processing apparatus for processing a plurality of substrates is provided. In a preferred embodiment, the apparatus comprises a reaction chamber. The reaction chamber comprises a reaction space for receiving a substrate boat constructed and arranged for holding the plurality of substrates. The rection chamber further comprise a gas distributor for providing gas into the reaction space and a gas exhaust for removing gas from the reaction space. The boat, the gas distributor and the gas exhaust are constructed and arranged to at least partially enclose the substrates in the boat and to form a gas flow path, in use, from the gas distributor to the gas exhaust, wherein the gas flow path is substantially being directed in between the substrates.

公开(公告)号：US20230420227A1

公开(公告)日：2023-12-28

申请号：US18367200

申请日：2023-09-12

Applicant: ASM IP Holding B.V.

Inventor： ChangMin Lee

IPC: H01J37/32

CPC classification number: H01J37/32541 ,  H01J37/32577 ,  H01J37/32935 ,  H01J37/32724 ,  H01J37/32082

Abstract: A substrate processing apparatus capable of locally controlling a plasma intensity and improving thin film properties and thickness uniformity includes: a power supply unit, a processing unit electrically connected to the power supply unit, and a substrate support unit below the processing unit, wherein the substrate support unit includes a first ground electrode and a second ground electrode.

公开(公告)号：US20230411147A1

公开(公告)日：2023-12-21

申请号：US18334058

申请日：2023-06-13

Applicant: ASM IP Holding, B.V.

Inventor： Jihee Jeon ,  Timothee Blanquart ,  Viljami Pore ,  Charles Dezelah

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02214 ,  H01J37/32357 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45553 ,  H01J2237/332 ,  H01J2237/2001

Abstract: Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

公开(公告)号：US20230407480A1

公开(公告)日：2023-12-21

申请号：US18242598

申请日：2023-09-06

Applicant: ASM IP Holding B.V.

Inventor： Andrew Michael Yednak, III ,  Todd Robert Dunn

IPC: C23C16/52 ,  G01F23/00 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  C30B25/16 ,  C23C16/458

CPC classification number: C23C16/52 ,  G01F23/0007 ,  C23C16/4408 ,  C23C16/45525 ,  C30B25/14 ,  C30B25/165 ,  C23C16/4583

Abstract: A chemical vessel is disclosed comprising a dip tube and a level sensor tube arranged in an elongated counterbore incorporated into a housing of the chemical vessel. The chemical vessel may be configured to allow a pushback routine to take place, whereby a level of liquid in the chemical vessel is reduced to a point that the dip tube is free from liquid inside the dip tube or at the bottom of the dip tube. Once the dip tube is free of the liquid, then a vacuum source may be used to purge vapor within the chemical vessel without the risk of damage to the vacuum source.

公开(公告)号：US20230407465A1

公开(公告)日：2023-12-21

申请号：US18209640

申请日：2023-06-14

Applicant: ASM IP Holding B.V.

Inventor： Takashi Yoshida

IPC: C23C16/36 ,  H01L21/02 ,  C23C16/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: C23C16/36 ,  H01L21/022 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  C23C16/325 ,  C23C16/45536 ,  C23C16/50 ,  C23C16/45529 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02219

Abstract: A method of forming a silicon oxycarbonitride layer on a substrate is disclosed. An exemplary method includes forming a layer comprising SiOC and forming a layer comprising SiCN, which together form the silicon oxycarbonitride layer.

公开(公告)号：US20230399745A1

公开(公告)日：2023-12-14

申请号：US18205766

申请日：2023-06-05

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yoshimoto ,  Makoto Igarashi ,  Ranjit Borude

IPC: C23C16/455 ,  C23C16/40 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32 ,  C23C16/511 ,  C23C16/505

CPC classification number: C23C16/45557 ,  C23C16/401 ,  C23C16/56 ,  C23C16/52 ,  H01J37/32201 ,  H01J37/3244 ,  H01J37/32091 ,  C23C16/511 ,  C23C16/505

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments relate to cyclical processes for gap-fill in which deposition is followed by a microwave plasma curing treatment and repeated. In some embodiments, the deposition and microwave plasma curing treatment are carried out in separate stations. In some embodiments, a second station is heated to a higher temperature than a first station. In some embodiments, a separate module is used for high temperature curing.

公开(公告)号：US20230395372A1

公开(公告)日：2023-12-07

申请号：US18236654

申请日：2023-08-22

Applicant: ASM IP Holding B.V.

Inventor： Shinya Yamada ,  Kai Matsuhisa ,  YouJin Choi ,  Hyunchul Kim ,  Eunji Bae ,  SeungRyul Lee ,  Naoki Inoue ,  Ryu Nakano ,  Mao Tsuchiya

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/04 ,  C23C16/50

CPC classification number: H01L21/0234 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/32165 ,  H01J37/3244 ,  C23C16/04 ,  C23C16/50 ,  H01J2237/332

Abstract: Methods of forming patterned structures suitable for a multiple patterning process and manipulating film properties are disclosed. Exemplary methods include forming a layer overlying the substrate, followed by treating the layer, wherein the layer is formed by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency. Exemplary methods can further include a step of treating the deposited material.