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    Methods for etching a less reactive material in the presence of a more reactive material
    101.
    发明授权
    Methods for etching a less reactive material in the presence of a more reactive material 失效
    在更多反应性材料存在下蚀刻较少反应性材料的方法

    公开(公告)号：US5304284A

    公开(公告)日：1994-04-19

    申请号：US785445

    申请日：1991-10-18

    申请人： Rangarajan Jagannathan ,  Sampath Purushothaman ,  Scott A. Sikorski

    发明人： Rangarajan Jagannathan ,  Sampath Purushothaman ,  Scott A. Sikorski

    IPC分类号： C23F1/44 ,  C01B7/19 ,  C23F1/10 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/00

    CPC分类号： C01B7/196 ,  C01B7/191 ,  C23F1/10 ,  H01L21/32136

    摘要： A method is described for providing a body of first material and a body of second material in a chemical environment wherein the first material contains first constituents having a lower and higher oxidation state and wherein the second material contains constituents having an oxidation state of energy greater than lower oxidation state of the first constituent. The environment is further provided with first cations energetically disposed for receiving electrons from the first constituents but not energetically disposed for receiving electrons from the second constituents. Electrons transfer from the first constituents to the first cations which are transformed thereby into second cations of lower oxidation state resulting in first body releasing into the environment third cations which are cations of the first (lower) oxidation state of the first constituent. The environment is further provided with an agent which consumes the second and third cations thereby permitting release into the environment additional ones of the third cations resulting in the first body being preferably etched with respect to the second body. The method is useful to etch copper in the presence of more highly reactive materials such as chrome, lead, tin, titanium, aluminum, iron, cobalt, and galvanically more active gold and nickel. The method is useful for forming structures containing copper having an overlying layer of the more highly reactive material without the requirement of the use of a resist material.

    摘要翻译： 描述了一种用于在化学环境中提供第一材料体和第二材料体的方法，其中所述第一材料包含具有较低和较高氧化态的第一组分，并且其中所述第二材料含有能量的氧化态大于 较低的第一成分的氧化态。 所述环境还具有能量地设置用于接收来自所述第一成分的电子的第一阳离子，但未被能量地设置以接收来自所述第二组分的电子。 电子从第一组分转移到第一阳离子，由此将其转化为较低氧化态的第二阳离子，导致第一体体向第一组分的第一（较低）氧化态的阳离子释放出第三阳离子。 环境还具有消耗第二和第三阳离子从而允许释放到环境中的试剂，优选地，相对于第二体蚀刻第一体的另外的第三阳离子。 该方法可用于在更高反应性的材料如铬，铅，锡，钛，铝，铁，钴和电流更活泼的金和镍的存在下蚀刻铜。 该方法可用于形成含有具有更高反应性材料的上层的铜的结构，而不需要使用抗蚀剂材料。

    Programmable via devices
    108.
    发明授权
    Programmable via devices 失效
    可通过设备进行编程

    公开(公告)号：US08525144B2

    公开(公告)日：2013-09-03

    申请号：US12511662

    申请日：2009-07-29

    申请人： Kuan-Neng Chen ,  Sampath Purushothaman

    发明人： Kuan-Neng Chen ,  Sampath Purushothaman

    IPC分类号： H01L29/02

    CPC分类号： H01L45/122 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/1683

    摘要： A device comprises a heater, a dielectric layer, a phase-change element, and a capping layer. The dielectric layer is disposed at least partially on the heater and defines an opening having a lower portion and an upper portion. The phase-change element occupies the lower portion of the opening and is in thermal contact with the heater. The capping layer overlies the phase-change element and occupies the upper portion of the opening. At least a fraction of the phase-change element is operative to change between lower and higher electrical resistance states in response to an application of an electrical signal to the heater.

    摘要翻译： 装置包括加热器，电介质层，相变元件和封盖层。 电介质层至少部分地设置在加热器上并限定具有下部和上部的开口。 相变元件占据开口的下部并与加热器热接触。 封盖层覆盖相变元件并占据开口的上部。 响应于向加热器施加电信号，相变元件的至少一部分可操作以在较低和较高的电阻状态之间改变。

    Selectively coated self-aligned mask
    109.
    发明授权
    Selectively coated self-aligned mask 有权
    选择性涂层自对准面膜

    公开(公告)号：US08491987B2

    公开(公告)日：2013-07-23

    申请号：US12164647

    申请日：2008-06-30

    申请人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

    发明人： Matthew E Colburn ,  Stephen M Gates ,  Jeffrey C Hedrick ,  Elbert Huang ,  Satyanarayana V Nitta ,  Sampath Purushothaman ,  Muthumanickam Sankarapandian

    IPC分类号： H01L23/58 ,  C08L53/00

    CPC分类号： H05K3/0079 ,  H01L21/0331 ,  H01L21/76849 ,  H05K3/282 ,  H05K2203/1173 ,  Y10T428/24802

    摘要： A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.

    摘要翻译： 一种用于在衬底上的现有图案上形成自对准图案的方法，包括在载体中涂覆含有掩蔽材料的溶液的涂层，所述掩模材料对现有图案的部分具有亲和力; 并且允许掩模材料的至少一部分优先组装到现有图案的部分。 该图案可以由具有第一原子组成的衬底的第一组区域和第二组衬底的区域组成，其具有不同于第一组成的第二原子组成。 第一组区域可以包括一个或多个金属元件，并且第二组区域可以包括电介质。 可以将第一和第二区域处理成具有不同的表面性质。 按照该方法制造的结构。 用于练习该方法的组合物。