公开(公告)号：US08766296B2

公开(公告)日：2014-07-01

申请号：US12576122

申请日：2009-10-08

申请人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

发明人： Tetsuo Fujii ,  Yan Gao ,  Evelyn L. Hu ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/60 ,  H01L2224/16225

摘要： A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.

摘要翻译： 一种基于氮化镓（GaN）的发光二极管（LED），其中通过LED的氮面（N面）提取光，并且将N面的表面粗糙化成一个或多个六边形锥体。 粗糙表面减少LED内部重复发生的光反射，从而从LED中提取更多的光。 通过各向异性蚀刻使N面的表面变粗糙，其可以包括干蚀刻或光增强化学（PEC）蚀刻。

公开(公告)号：US08749019B2

公开(公告)日：2014-06-10

申请号：US13410455

申请日：2012-03-02

申请人： Tetsuo Fujii ,  Keisuke Gotoh ,  Masaya Tanaka

发明人： Tetsuo Fujii ,  Keisuke Gotoh ,  Masaya Tanaka

IPC分类号： H01L21/70 ,  H01L21/8238

CPC分类号： H01L21/76898 ,  B81B2207/095 ,  B81C1/00301 ,  G01P15/125 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00 ,  H01L2924/00012

摘要： A region-divided substrate includes: a substrate having a first surface and a second surface opposite to the first surface and having a plurality of partial regions, which are divided by a plurality of trenches, wherein each trench penetrates the substrate from the first surface to the second surface; a conductive layer having an electrical conductivity higher than the substrate and disposed on a sidewall of one of the plurality of partial regions from the first surface to the second surface; and an insulator embedded in each trench.

摘要翻译： 区域划分的基板包括：具有第一表面和与第一表面相对的第二表面并具有由多个沟槽分隔的多个部分区域的基板，其中每个沟槽从第一表面穿透基板至 第二表面 导电层，其导电率高于所述衬底并且设置在所述多个部分区域中的所述第一表面到所述第二表面之一的侧壁上; 以及嵌入每个沟槽中的绝缘体。

公开(公告)号：US08610133B2

公开(公告)日：2013-12-17

申请号：US13274289

申请日：2011-10-14

申请人： Ken Nakahara ,  Shunsuke Akasaka ,  Koki Sakamoto ,  Tetsuo Fujii ,  Shunsuke Furuse ,  Soichiro Arimura

发明人： Ken Nakahara ,  Shunsuke Akasaka ,  Koki Sakamoto ,  Tetsuo Fujii ,  Shunsuke Furuse ,  Soichiro Arimura

IPC分类号： H01L21/02

CPC分类号： G02B5/208 ,  G01J1/1626 ,  G01J1/429 ,  G02B5/285

摘要： Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range λ and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range λ is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.

摘要翻译： 在支撑基板上形成两个光接收元件。 第一光接收元件由p型层，n型层，光吸收半导体层，阳极电极，阴极电极，保护膜等形成。第二光接收元件由p 型层，n型层，透射膜，阳极电极，阴极电极，保护膜等。光吸收半导体层吸收波长λ范围内的光，并且设置得比光接收表面更靠近光接收表面 pn结区域。 透射膜没有光吸收范围，并且比pn结区域更靠近光接收表面。 通过使用来自第一光接收元件的检测信号和来自第二光接收元件的检测信号的计算来测量波长范围λ的光量。

公开(公告)号：US08278731B2

公开(公告)日：2012-10-02

申请号：US12289773

申请日：2008-11-04

申请人： Masakiyo Sumitomo ,  Makoto Asai ,  Nozomu Akagi ,  Yasuhiro Kitamura ,  Hiroki Nakamura ,  Tetsuo Fujii

发明人： Masakiyo Sumitomo ,  Makoto Asai ,  Nozomu Akagi ,  Yasuhiro Kitamura ,  Hiroki Nakamura ,  Tetsuo Fujii

IPC分类号： H01L21/762 ,  H01L27/12

CPC分类号： H01L21/823481 ,  H01L21/26533 ,  H01L21/76243 ,  H01L21/76264 ,  H01L21/823487 ,  H01L21/84 ,  H01L27/0251 ,  H01L27/0629 ,  H01L27/1203 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a SOI substrate including a support layer, a first insulation film and a SOI layer; a first circuit; a second circuit; and a trench separation element. The SOI substrate further includes a first region and a second region. The first region has the support layer, the first insulation film and the SOI layer, which are stacked in this order, and the second region has only the support layer. The trench separation element penetrates the support layer, the first insulation film and the SOI layer. The trench separation element separates the first region and the second region. The first circuit is disposed in the SOI layer of the first region. The second circuit is disposed in the support layer of the second region.

摘要翻译： 半导体器件包括：SOI衬底，包括支撑层，第一绝缘膜和SOI层; 第一个电路; 第二电路; 和沟槽分离元件。 SOI衬底还包括第一区域和第二区域。 第一区域具有依次层叠的支撑层，第一绝缘膜和SOI层，第二区域仅具有支撑层。 沟槽分离元件穿透支撑层，第一绝缘膜和SOI层。 沟槽分离元件分离第一区域和第二区域。 第一电路设置在第一区域的SOI层中。 第二电路设置在第二区域的支撑层中。

公开(公告)号：US08148809B2

公开(公告)日：2012-04-03

申请号：US12654707

申请日：2009-12-29

申请人： Kouji Senda ,  Satoshi Shiraki ,  Yukihiro Maeda ,  Shinichi Hirose ,  Tetsuo Fujii ,  Takashi Nakano

发明人： Kouji Senda ,  Satoshi Shiraki ,  Yukihiro Maeda ,  Shinichi Hirose ,  Tetsuo Fujii ,  Takashi Nakano

IPC分类号： H01L23/48

CPC分类号： H01L21/84 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49551 ,  H01L24/27 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for manufacturing a semiconductor device includes: preparing a wafer formed of a SOI substrate; forming a circuit portion in a principal surface portion; removing a support substrate of the SOI substrate; fixing an insulation member on a backside of a semiconductor layer so as to be opposite to the circuit portion; dicing the wafer and dividing the wafer into multiple chips; arranging a first conductive member on the insulation member so as to be opposite to a part of the low potential reference circuit, and arranging a second conductive member on the insulation member so as to be opposite to a part of the high potential reference circuit; and coupling the first conductive member with a first part of the low potential reference circuit, and coupling the second conductive member with a second part of the high potential reference circuit.

摘要翻译： 一种制造半导体器件的方法包括：制备由SOI衬底形成的晶片; 在主表面部分形成电路部分; 去除SOI衬底的支撑衬底; 将绝缘构件固定在半导体层的背面以与电路部分相对; 切割晶片并将晶片分成多个芯片; 在所述绝缘构件上设置与所述低电位基准电路的一部分相对的第一导电构件，并且在所述绝缘构件上配置与所述高电位基准电路的一部分相反的第二导电构件; 以及将所述第一导电构件与所述低电位参考电路的第一部分耦合，以及将所述第二导电构件与所述高电位参考电路的第二部分耦合。

公开(公告)号：US08098000B2

公开(公告)日：2012-01-17

申请号：US12230039

申请日：2008-08-21

申请人： Yasuyuki Okuda ,  Makiko Sugiura ,  Kenji Fukumura ,  Takahiko Yoshida ,  Tetsuo Fujii

发明人： Yasuyuki Okuda ,  Makiko Sugiura ,  Kenji Fukumura ,  Takahiko Yoshida ,  Tetsuo Fujii

IPC分类号： H01L41/08

CPC分类号： G01S7/521

摘要： An ultrasonic sensor for detecting an object includes: a piezoelectric element having a piezoelectric body and first and second electrodes for sandwiching the piezoelectric body; an acoustic matching element having a reception surface, which receives an ultrasonic wave reflected by the object; and a circuit electrically coupled with the piezoelectric element via a wire. The piezoelectric element is embedded in the acoustic matching element so that the acoustic matching element covers at least the first electrode, a part of a sidewall of the piezoelectric element and a part of the wire between the circuit and the piezoelectric element, and the sidewall of the piezoelectric element is adjacent to the first electrode.

摘要翻译： 一种用于检测物体的超声波传感器包括：具有压电体的压电元件和用于夹持压电体的第一和第二电极; 具有接收表面的声匹配元件，其接收由所述物体反射的超声波; 以及经由导线与压电元件电耦合的电路。 压电元件被嵌入在声匹配元件中，使得声匹配元件至少覆盖第一电极，压电元件的侧壁的一部分和电路与压电元件之间的线的一部分，以及侧壁 压电元件与第一电极相邻。

公开(公告)号：US20110094303A1

公开(公告)日：2011-04-28

申请号：US12926970

申请日：2010-12-21

申请人： Tameharu Ohta ,  Tetsuo Fujii ,  Masanobu Azukawa ,  Takeshi Ito ,  Itaru Ishii

发明人： Tameharu Ohta ,  Tetsuo Fujii ,  Masanobu Azukawa ,  Takeshi Ito ,  Itaru Ishii

IPC分类号： G01C19/56 ,  B23P11/00

CPC分类号： G01C19/56 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0285 ,  G01D18/00 ,  G01P15/08 ,  H01L2224/48247 ,  H05K13/00 ,  Y10T29/49002 ,  Y10T29/49117 ,  Y10T29/49826

摘要： A physical quantity sensor includes a sensor portion, a casing, and a vibration isolator. The casing includes a supporting portion with a supporting surface that is located to face an end surface of the sensor portion. The vibration isolator is located between the end surface of the sensor portion and the supporting surface of the casing to join the sensor portion to the casing. The vibration isolator reduces a relative vibration between the sensor portion and the casing.

摘要翻译： 物理量传感器包括传感器部分，壳体和隔振器。 壳体包括具有支撑表面的支撑部分，支撑表面位于传感器部分的端表面上。 隔振器位于传感器部分的端面和壳体的支撑表面之间，以将传感器部分接合到壳体。 隔振器减小传感器部分和壳体之间的相对振动。

公开(公告)号：US20110042741A1

公开(公告)日：2011-02-24

申请号：US12805733

申请日：2010-08-17

申请人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Manabu Tomisaka ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

发明人： Daisuke Fukuoka ,  Takanori Teshima ,  Kuniaki Mamitsu ,  Ken Sakamoto ,  Manabu Tomisaka ,  Tetsuo Fujii ,  Akira Tai ,  Kazuo Akamatsu ,  Masayoshi Nishihata

IPC分类号： H01L29/772 ,  H01L23/498

CPC分类号： H01L23/3192 ,  H01L23/4334 ,  H01L23/492 ,  H01L24/01 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/16 ,  H01L2224/48491 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01052 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/3512 ,  H01L2924/00

摘要： A semiconductor device includes a first protection film for covering a first metal wiring. A second protection film is disposed on the first protection film, which is covered with a solder layer. Even if a crack is generated in the second protection film before the solder layer is formed on the second protection film, the crack is restricted from proceeding into the first protection film.

摘要翻译： 半导体器件包括用于覆盖第一金属布线的第一保护膜。 第一保护膜设置在第一保护膜上，该第一保护膜被焊料层覆盖。 即使在第二保护膜上形成焊料层之前，在第二保护膜中产生裂纹，限制裂纹进入第一保护膜。

公开(公告)号：US07833876B2

公开(公告)日：2010-11-16

申请号：US12230209

申请日：2008-08-26

申请人： Nozomu Akagi ,  Yasuhiro Kitamura ,  Tetsuo Fujii

发明人： Nozomu Akagi ,  Yasuhiro Kitamura ,  Tetsuo Fujii

IPC分类号： H01L21/76

CPC分类号： H01L21/76264 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： In a manufacturing of a semiconductor device, at least one of elements is formed in each of element formation regions of a substrate having a main side and a rear side, and the substrate is thinned by polished from a rear side of the substrate, and then, multiple trenches are formed on the rear side of the substrate, so that each trench reaches the main side of the substrate. After that, an insulating material is deposited over an inner surface of each trench to form an insulating layer in the trench, so that the element formation regions are isolated. Thereby, generation of cracks and structural steps in the substrate and separation of element formation regions from the substrate can be suppressed.

摘要翻译： 在半导体器件的制造中，在具有主侧和后侧的基板的元件形成区域中的至少一个元件形成区域中形成至少一个元件，并且通过从基板的后侧抛光基板而使基板变薄 在衬底的后侧形成多个沟槽，使得每个沟槽到达衬底的主侧。 之后，绝缘材料沉积在每个沟槽的内表面上，以在沟槽中形成绝缘层，使得元件形成区域被隔离。 由此，可以抑制基板的裂纹和结构的产生，并且能够抑制元件形成区域与基板的分离。

公开(公告)号：US20100176466A1

公开(公告)日：2010-07-15

申请号：US12654902

申请日：2010-01-07

申请人： Tetsuo Fujii ,  Masaki Inoue

发明人： Tetsuo Fujii ,  Masaki Inoue

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： G01P15/0802 ,  B81B7/007 ,  B81B7/02 ,  B81B2207/092 ,  B81B2207/095 ,  G01P1/023 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0828 ,  H01L27/14601 ,  H01L27/148

摘要： A semiconductor device includes a sensor member and a cap member. The sensor member has a surface and includes a first sensing section. The first sensing section includes first and second portions that are located on the surface side of the sensor member and electrically insulated from each other. The cap member has a surface and includes a cross wiring portion. The surface of the cap member is joined to the surface of the sensor member in such a manner that the first sensing section is sealed by the sensor member and the cap member. The cross wiring portion electrically connects the first portion to the second portion.

摘要翻译： 半导体器件包括传感器部件和盖部件。 传感器构件具有表面并且包括第一感测部分。 第一感测部分包括位于传感器部件的表面侧并彼此电绝缘的第一和第二部分。 盖构件具有表面并且包括交叉布线部分。 盖构件的表面以传感器构件和帽构件密封第一感测部分的方式接合到传感器构件的表面。 十字布线部分将第一部分电连接到第二部分。