公开(公告)号：US20050208767A1

公开(公告)日：2005-09-22

申请号：US11069348

申请日：2005-02-28

申请人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

发明人： Peijun Ding ,  Zheng Xu ,  Hong Zhang ,  Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John Forster ,  Jianming Fu ,  Tony Chiang ,  Gongda Yao ,  Fusen Chen ,  Barry Chin ,  Gene Kohara

IPC分类号： C23C14/06 ,  C23C14/16 ,  C23C14/32 ,  H01L21/285 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/02183 ,  C23C14/024 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/2855 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

摘要翻译： 我们已经发现了一种提供大约从大约2埃到大约100埃的Ta N种子层的薄的方法，其可以在钽沉积在Ta上时用于诱导形成α钽 N种子层。 此外，Ta N N种子层在30微米范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。 在该方法的一个实施方案中，在其表面上改变TaN膜以形成Ta N N种子层。 在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

公开(公告)号：US20050208754A1

公开(公告)日：2005-09-22

申请号：US10910881

申请日：2004-08-03

申请人： Juhana Kostamo ,  Maarten Stokhof

发明人： Juhana Kostamo ,  Maarten Stokhof

IPC分类号： C23C16/40 ,  C23C16/56 ,  H01L21/02 ,  H01L21/28 ,  H01L21/314 ,  H01L21/768 ,  H01L29/76

CPC分类号： H01L21/76823 ,  C23C16/40 ,  C23C16/56 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/3141 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76873 ,  H01L28/65

摘要： A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a gaseous inorganic reducing agent, thereby forming a metal layer. In preferred arrangements, the reducing agent comprises of thermal hydrogen (H2), hydrogen radicals (H*) and/or carbon monoxide (CO).

摘要翻译： 形成导电薄膜的方法包括通过原子层沉积（ALD）工艺在基底上沉积金属氧化物薄膜。 该方法还包括通过将金属氧化物薄膜暴露于气态无机还原剂，至少部分还原金属氧化物薄膜，由此形成金属层。 在优选的配置中，还原剂包括热氢（H 2 H 2），氢自由基（H *）和/或一氧化碳（CO）。

公开(公告)号：US06921728B2

公开(公告)日：2005-07-26

申请号：US10321047

申请日：2002-12-16

申请人： Gurtej S. Sandhu

发明人： Gurtej S. Sandhu

IPC分类号： B05D3/06 ,  C23C14/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/31 ,  H01L21/44 ,  H01L21/70 ,  H01L51/40 ,  H05H1/00

CPC分类号： C23C16/34 ,  C23C16/45523 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76862

摘要： A chemical vapor deposition method of providing a layer of material atop a semiconductor wafer using an organic precursor includes, a) positioning a wafer within a chemical vapor deposition reactor; b) injecting an organic precursor to within the reactor having the wafer positioned therein, and maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer of material onto the wafer which incorporates carbon from the organic precursor; and c) after depositing the first layer, ceasing to inject the organic precursor into the reactor and injecting a component gas into the reactor and generating a plasma within the reactor against the first layer, the component gas and plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited first layer to remove carbon from the first layer and produce gaseous products which are expelled from the reactor. In one aspect, the component gas provides a bonding component which replaces and substitutes for the carbon displaced from carbide present in the layer. In another aspect, the “b” and “c” steps are repeated to deposit more of the same layers.

摘要翻译： 使用有机前体在半导体晶片顶上提供材料层的化学气相沉积方法包括：a）将晶片定位在化学气相沉积反应器内; b）将有机前体注入到其中具有晶片的反应器内，并将反应器保持在有效地将第一层材料沉积到晶片上的温度和压力上，所述第一层材料结合有机前体的碳; 和c）在沉积第一层之后，停止将有机前体注入反应器中并将组分气体注入反应器中并在反应器内产生等离子体以抵抗第一层，由其产生的组分气体和等离子体具有如下成分： 当处于活化状态以与沉积的第一层的组分相互作用以从第一层移除碳并产生从反应器排出的气态产物时有效。 在一个方面，组分气体提供了取代和替代从层中存在的碳化物中移出的碳的结合组分。 在另一方面，重复“b”和“c”步骤以沉积更多相同的层。

公开(公告)号：US06911124B2

公开(公告)日：2005-06-28

申请号：US10246316

申请日：2002-09-17

申请人： Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Peijun Ding

发明人： Xianmin Tang ,  Praburam Gopalraja ,  Suraj Rengarajan ,  John C. Forster ,  Jianming Fu ,  Peijun Ding

IPC分类号： C23C14/06 ,  C23C14/16 ,  C23C14/54 ,  C23C14/58 ,  H01L21/285 ,  H01L21/318 ,  H01L21/768 ,  C23C14/34 ,  H05H1/24

CPC分类号： H01L21/2855 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/541 ,  C23C14/5806 ,  H01L21/318 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876

摘要： We have discovered a method of providing a thin approximately from about 20 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the TaN seed layer exhibits low resistivity, in the range of 30 μΩ m and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface form the TaN seed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaN seed layer.

摘要翻译： 我们已经发现了一种提供约大约至大约厚厚的Ta N种子层的薄膜的方法，当钽沉积在Ta上时可用于诱导形成α钽， SUB> N 种子层。 此外，Ta N N种子层在30μm范围内显示低电阻率，并且可以在不存在α钽层的情况下用作低电阻率阻挡层。 在该方法的一个实施方案中，TaN膜在其表面上形成Ta N N种子层。 在该方法的另一个实施方案中，在其表面上改变Ta膜以形成Ta N N种子层。

公开(公告)号：US06900127B2

公开(公告)日：2005-05-31

申请号：US10649256

申请日：2003-08-27

申请人： Satyavolu S. Papa Rao ,  Stephan Grunow ,  Noel M. Russell

发明人： Satyavolu S. Papa Rao ,  Stephan Grunow ,  Noel M. Russell

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76846 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76862 ,  H01L21/76873

摘要： A trench (70) is formed in a dielectric layer (20). A first metal layer (80) is formed in the trench using physical vapor deposition. A second metal layer (100) is formed in the trench (70) over the first metal layer (80) using chemical vapor deposition. Copper (110) is used to fill the trench (70) by electroplating copper directly onto the second metal (100).

摘要翻译： 沟槽（70）形成在电介质层（20）中。 使用物理气相沉积在沟槽中形成第一金属层（80）。 使用化学气相沉积在第一金属层（80）上的沟槽（70）中形成第二金属层（100）。 铜（110）用于通过将铜直接电镀到第二金属（100）上来填充沟槽（70）。

公开(公告)号：US20050095844A1

公开(公告)日：2005-05-05

申请号：US10970024

申请日：2004-10-22

申请人： Tatsuyuki Saito ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

发明人： Tatsuyuki Saito ,  Naohumi Ohashi ,  Toshinori Imai ,  Junji Noguchi ,  Tsuyoshi Tamaru

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/092

CPC分类号： H01L21/76849 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76877 ,  H01L21/76882 ,  H01L21/76883 ,  H01L21/76889 ,  H01L23/53295 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05024 ,  H01L2224/05025 ,  H01L2224/05027 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/13

摘要： A barrier layer and a copper film are successively formed on a silicon oxide film including a groove for wiring in the silicon oxide film and a silicon nitride film, both formed on a semiconductor substrate. Thereafter, the barrier layer and the copper film are removed from outside of the groove for wiring, thereby forming a wiring. Tungsten is selectively or preferentially grown on the wiring to selectively form a tungsten film on the wiring. After the formation of the copper film, a treatment with hydrogen may be performed. After the formation of the wiring, the semiconductor substrate may be cleaned with a cleaning solution capable of removing a foreign matter or a contaminant metal. After the formation of the wiring, a treatment with hydrogen is carried out.

摘要翻译： 在半导体衬底上形成的氧化硅膜上形成有用于配线的沟槽的氧化硅膜和氮化硅膜，依次形成阻挡层和铜膜。 此后，从用于布线的槽的外侧除去阻挡层和铜膜，从而形成布线。 钨选择性地或优先地生长在布线上以在布线上选择性地形成钨膜。 铜膜形成后，可以进行氢处理。 在形成布线之后，可以用能够除去异物或污染金属的清洁溶液来清洁半导体衬底。 形成布线后，进行氢的处理。

公开(公告)号：US06872657B2

公开(公告)日：2005-03-29

申请号：US10638235

申请日：2003-08-08

申请人： Chaoyong Li ,  Dao Hua Zhang

发明人： Chaoyong Li ,  Dao Hua Zhang

IPC分类号： H01L21/285 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76862 ,  H01L21/76873 ,  H01L2221/1089

摘要： Copper seed layers for use in damascene structures are commonly deposited by CVD because of their superior step coverage. However, these films have poor adhesion to the barrier layer. This problem has been overcome by preceding the deposition of the CVD copper layer with a metal plasma treatment that lays down a very thin layer of copper while the structure receiving it is maintained at a temperature below about −40 C. This is followed by a short exposure to a nitrogen bearing plasma. The results is a seed layer having excellent step coverage as well as very good adhesion to the underlying barrier layer.

摘要翻译： 用于镶嵌结构的铜种子层通常由CVD沉积，因为它们具有优异的阶梯覆盖。 然而，这些膜对阻挡层的粘附性差。 通过在金属等离子体处理沉积CVD铜层之前已经克服了这个问题，金属等离子体处理层放置了非常薄的铜层，而接收它的结构保持在低于约-40℃的温度。之后是短暂的 暴露于含氮等离子体。 结果是具有优异的台阶覆盖以及对下面的阻挡层的非常好的附着力的种子层。

公开(公告)号：US06860944B2

公开(公告)日：2005-03-01

申请号：US10462180

申请日：2003-06-16

申请人： Igor C. Ivanov ,  Welguo Zhang

发明人： Igor C. Ivanov ,  Welguo Zhang

IPC分类号： C23C18/16 ,  H01L21/00 ,  H01L21/288 ,  H01L21/768 ,  C23C14/00

CPC分类号： H01L21/76843 ,  C23C18/1619 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76874

摘要： A process chamber is provided which includes a gate configured to align barriers with an opening of the gate and an opening of the process chamber such that the two openings are either sealed or provide an air passage to the chamber. A method is provided and includes sealing an opening of a chamber with a gate latch and exposing a topography to a first set of process steps, opening the gate latch such that an air passage is provided to the process chamber, and exposing the topography to a second set of process steps without allowing liquids within the chamber to flow through the air passage. A substrate holder comprising a clamping jaw with a lever and a support member coupled to the lever is also contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided herein.

公开(公告)号：US20050023696A1

公开(公告)日：2005-02-03

申请号：US10927079

申请日：2004-08-27

申请人： Hiroyuki Nitta ,  Yoshiaki Fukuzumi ,  Yusuke Kohyama

发明人： Hiroyuki Nitta ,  Yoshiaki Fukuzumi ,  Yusuke Kohyama

IPC分类号： H01L21/3213 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L23/532 ,  H01L27/108 ,  H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/32134 ,  H01L21/7682 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76897 ,  H01L23/5222 ,  H01L23/5329 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L2924/0002 ,  Y10S438/927 ,  H01L2924/00

摘要： In a semiconductor device, a wiring pattern groove is formed in a surface portion of a silicon oxide film provided above a semiconductor substrate. A wiring layer is buried into the wiring pattern groove with a barrier metal film interposed therebetween. The barrier metal film is selectively removed from each sidewall portion of the wiring pattern groove. In other words, the barrier metal film is left only on the bottom of the wiring pattern groove. Thus, a damascene wiring layer having a hollow section whose dielectric constant is low between each sidewall of the wiring pattern groove and each side of the wiring layer can be formed in the semiconductor device.

公开(公告)号：US20050009325A1

公开(公告)日：2005-01-13

申请号：US10871864

申请日：2004-06-18

申请人： Hua Chung ,  Rongjun Wang ,  Nirmalya Maity

发明人： Hua Chung ,  Rongjun Wang ,  Nirmalya Maity

IPC分类号： C23C16/02 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： C23C16/45529 ,  C23C16/02 ,  C23C16/0281 ,  C23C16/14 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76876

摘要： Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

摘要翻译： 提供了通过原子层沉积处理衬底以沉积一层或多层材料层的阻挡层的方法。 在一个方面，提供了一种处理衬底的方法，包括通过交替地引入含有金属的化合物的一种或多种脉冲和含氮化合物的一个或多个脉冲，在衬底表面的至少一部分上沉积金属氮化物阻挡层 以及通过交替地引入一种或多种含金属化合物的脉冲和一种或多种还原剂的脉冲，在金属氮化物阻挡层的至少一部分上沉积金属阻挡层。 可以在沉积金属氮化物阻挡层和/或金属阻挡层之前在衬底表面上进行浸泡工艺。