公开(公告)号：US09328415B2

公开(公告)日：2016-05-03

申请号：US14296897

申请日：2014-06-05

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Jeffrey W. Anthis

IPC: C23C16/18 ,  C23C16/06 ,  C23C16/455 ,  C23C16/34 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768

CPC classification number: C23C16/18 ,  C23C16/34 ,  C23C16/45534 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and precursors are provided for deposition of films comprising manganese on surfaces using metal coordination complexes comprising a diazabutadiene-based ligand. Certain methods comprise exposing a substrate surface to a manganese precursor, and exposing the substrate surface to a tertiary amine.

Abstract translation: 提供方法和前体用于使用包含基于二氮杂二丁烯的配体的金属配位络合物将包含锰的膜沉积在表面上。 某些方法包括将基底表面暴露于锰前体，并将基底表面暴露于叔胺。

公开(公告)号：US20160064275A1

公开(公告)日：2016-03-03

申请号：US14469980

申请日：2014-08-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Paul F. Ma ,  Hua Ai ,  Jiang Lu ,  Mei Chang ,  David Thompson

IPC: H01L21/768 ,  H01L21/311

CPC classification number: H01L21/76826 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76849 ,  H01L21/76883

Abstract: Methods of selectively depositing a metal selectively onto a metal surface relative to a dielectric surface. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon.

Abstract translation: 相对于电介质表面选择性地将金属选择性地沉积到金属表面上的方法。 方法包括将金属氧化物表面还原成金属表面并保护电介质表面以使其上的沉积最小化。

公开(公告)号：US20160002039A1

公开(公告)日：2016-01-07

申请号：US14771697

申请日：2014-02-28

Applicant: David THOMPSON ,  Applied Materials, Inc.

Inventor： David Thompson

IPC: C01B21/082 ,  C23C16/455 ,  C23C16/36 ,  C23C16/48

CPC classification number: C01B21/0828 ,  C23C16/308 ,  C23C16/36 ,  C23C16/45525 ,  C23C16/45553 ,  C23C16/48

Abstract: Provided are methods for the deposition of films comprising SiCN and SiCON. Certain methods involve exposing a substrate surface to a first and second precursor, the first precursor having a formula (XyH3-ySi)zCH4-z, (XyH3-ySi)(CH2)(SiXpH2-p)(CH2)(SiXyH3-y), or (XyH3-ySi)(CH2)n(SiXyH3-y), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, p has a value of between 0 and 2, and n has a value between 2 and 5, and the second precursor comprising a reducing amine. Certain methods also comprise exposure of the substrate surface to an oxygen source to provide a film comprising SiCON.

Abstract translation: 提供了沉积包含SiCN和SiCON的膜的方法。 某些方法包括将基材表面暴露于第一和第二前体，第一前体具有式（XyH3-ySi）zCH4-z，（XyH3-ySi）（CH2）（SiXpH2-p）（CH2）（SiXyH3-y） ，或（XyH3-ySi）（CH2）n（SiXyH3-y），其中X是卤素，y具有1和3之间的值，z具有1和3之间的值，p的值在 0和2，并且n具有2和5之间的值，并且第二前体包含还原胺。 某些方法还包括将衬底表面暴露于氧源以提供包含SiCON的膜。

公开(公告)号：US09230815B2

公开(公告)日：2016-01-05

申请号：US14062804

申请日：2013-10-24

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  Srinivas Gandikota ,  Avgerinos V. Gelatos ,  Atif Noori ,  Mei Chang ,  David Thompson ,  Steve G. Ghanayem

IPC: H01L21/285 ,  H01L21/28 ,  H01L21/02 ,  C23C16/455 ,  H01L21/768 ,  C23C16/14

CPC classification number: H01L21/28562 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/14 ,  C23C16/345 ,  C23C16/42 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  H01L21/28088 ,  H01L21/28506 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76877

Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.

Abstract translation: 提供了使用包含一种或多种五氯化钨，具有经验式WCl 5或WCl 6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

公开(公告)号：US12281387B2

公开(公告)日：2025-04-22

申请号：US17566026

申请日：2021-12-30

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mark Saly ,  David Thompson ,  Annamalai Lakshmanan ,  Avgerinos V. Gelatos ,  Joung Joo Lee

IPC: C23C16/455 ,  C07F17/00 ,  C07F17/02 ,  C23C16/18

Abstract: Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.

公开(公告)号：US20250125195A1

公开(公告)日：2025-04-17

申请号：US18378828

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Xinke Wang ,  Liqi Wu ,  Qihao Zhu ,  Mark Saly ,  Jiang Lu ,  John Sudijono ,  David Thompson

IPC: H01L21/768 ,  H01L21/02

Abstract: Embodiments of the disclosure relate to methods using an oligomer film to protect a substrate surface. The oligomer film is formed on the substrate surface with a first feature and a second feature each having a feature depth. The first feature has a first critical dimension (CD) and the second feature has a second CD. The semiconductor substrate surface is exposed to one or more monomers to form the oligomer film, and the oligomer film forms selectively on the bottom and fills a portion of the feature depth. The oligomer film fills the feature depth to substantially the same or the same height in each of the first feature and the second feature. Methods of forming semiconductor devices using the oligomer film are also disclosed.

公开(公告)号：US11946135B2

公开(公告)日：2024-04-02

申请号：US18190246

申请日：2023-03-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/14 ,  C23C16/455 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

CPC classification number: C23C16/42 ,  C23C16/14 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/507 ,  C23C16/513 ,  C23C16/52

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US11821085B2

公开(公告)日：2023-11-21

申请号：US17182906

申请日：2021-02-23

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Tobin Kaufman-Osborn ,  Kurt Fredrickson ,  Thomas Knisley ,  Liqi Wu

IPC: C23C16/455 ,  H01L21/02

CPC classification number: C23C16/45553 ,  C23C16/45527 ,  H01L21/0228 ,  H01L21/02175

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.

公开(公告)号：US11761094B2

公开(公告)日：2023-09-19

申请号：US17313847

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： David Britz ,  Pravin K. Narwankar ,  David Thompson ,  Yuriy Melnik ,  Sukti Chatterjee

IPC: F01D5/28 ,  C23C28/00 ,  F01D5/18 ,  C23C16/455 ,  C23C16/52 ,  C23C28/04 ,  C23C16/40 ,  C23C14/08

CPC classification number: C23C28/3455 ,  C23C16/45525 ,  C23C16/52 ,  C23C28/3215 ,  C23C28/345 ,  F01D5/186 ,  F01D5/288 ,  C23C14/083 ,  C23C16/40 ,  C23C28/042 ,  F05D2230/31 ,  F05D2240/24 ,  F05D2260/95 ,  F05D2300/121 ,  F05D2300/132 ,  F05D2300/134 ,  Y10T428/2462

Abstract: Using the systems and methods discussed herein, CMAS corrosion is inhibited via CMAS interception in an engine environment and/or is prevented or reduced by the formation of a metal oxide protective coating on a hot engine section component. The CMAS interception can occur while the engine is in operation in flight or in a testing or quality control environment. The metal oxide protective coating can be applied over other coatings, including Gd-zirconates (GZO) or yttria-stabilized zirconia (YSZ). The metal oxide protective coating is applied at original equipment manufacturers (OEM) and can also be applied in-situ using a gas injection system during engine use in-flight or during maintenance or quality testing. The metal oxide protective coating contains a rare earth element, aluminum, zirconium, chromium, or combinations thereof and can have a thickness from 1 nm to 3,000 nm.

公开(公告)号：US20230227975A1

公开(公告)日：2023-07-20

申请号：US17566026

申请日：2021-12-30

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mark Saly ,  David Thompson ,  Annamalai Lakshmanan ,  Avgerinos V. Gelatos ,  Joung Joo Lee

IPC: C23C16/455 ,  C23C16/18 ,  C07F17/02 ,  C07F17/00

CPC classification number: C23C16/45553 ,  C07F17/00 ,  C07F17/02 ,  C23C16/18 ,  C23C16/45536

Abstract: Organometallic precursors and methods of depositing high purity metal films are discussed. Some embodiments utilize a method comprising exposing a substrate surface to an organometallic precursor comprising one or more of molybdenum (Mo), tungsten (W), osmium (Os), technetium (Tc), manganese (Mn), rhenium (Re) or ruthenium (Ru), and an iodine-containing reactant comprising a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4 to form a carbon-less iodine-containing metal film. Some embodiments advantageously provide methods of forming metal films having low carbon content (e.g., having greater than or equal to 95% metal species on an atomic basis), without using an oxidizing agent or a reductant.