Abstract:
A device comprising a power core wherein said power core comprises: at least one embedded singulated capacitor layer containing at least one embedded singulated capacitor wherein said embedded singulated capacitor comprises at least a first electrode and a second electrode and wherein said embedded singulated capacitor is positioned on the outer layer of the power core with both first and second electrodes of the capacitor on the outer layer of the power core so that at least one Vcc (power) terminal and at least one Vss (ground) terminal of a semiconductor device can be directly connected to at least one first and at least one second electrode, respectively.
Abstract:
Disclosed are organic-compatible thin film processing techniques with reactive (such as Ti) layers for embedding capacitors into substrates. Hydrothermal synthesis allows direct deposition of high-k films with capacitance density of about 1 μF/cm2 on organic substrates. This is done by reactively growing a high-k film from Ti foil/Ti-coated copper foil/Ti precursor-coated organic substrate in an alkaline barium ion bath. Alternatives may be used to address multiple coatings, low temperature baking, low temperature pyrolysis with oxygen plasma, etc. Sol-gel and RF-sputtering assisted by a reaction with the intermediate layer and a foil transfer process may be used to integrate perovskite thin films with a capacitance in the range of 1-5 μF/cm2. Thermal oxidation of titanium foil/Ti-coated copper foil/Ti-coated organic substrate with a copper conductive layer is also a reactively grown high-k film process for integrating capacitance of hundreds of nF with or without using a foil transfer process.
Abstract translation:公开了具有用于将电容器嵌入衬底中的反应性(例如Ti)层的有机相容薄膜处理技术。 水热合成允许在有机衬底上直接沉积具有约1μF/ cm 2的电容密度的高k膜。 这是通过在碱性钡离子浴中从Ti箔/ Ti涂覆的铜箔/ Ti前体涂覆的有机衬底上反应生长高k膜而完成的。 替代品可用于处理多层涂料,低温烘烤,氧等离子体的低温热解等。通过与中间层反应和箔转移工艺进行辅助的溶胶 - 凝胶和RF溅射可用于整合钙钛矿薄膜 电容量在1-5μF/ cm 2之间。 具有铜导电层的钛箔/ Ti涂覆的铜箔/ Ti涂覆的有机衬底的热氧化也是用于利用或不使用箔转移工艺来集成数百nF的电容的反应生长的高k膜工艺。
Abstract:
A method of forming printed wiring boards having embedded thick-film capacitors includes covering capacitor layers with a protective coating prior to etching to prevent etching solutions from contacting with and damaging the capacitor layers and forming vias directly between the capacitor electrodes and the board circuitry.
Abstract:
The present invention relates to a method of making an embedded capacitor and a printed wiring board includes providing a metallic foil; forming a first dielectric layer over the metallic foil; forming a conductive layer over at least a portion of the first dielectric layer; controlling an oxygen content of a controlled atmosphere; and firing the first dielectric layer and the conductive layer in a firing zone in the controlled atmosphere.
Abstract:
The present invention relates to a device comprising a power core wherein said power core comprises: at least one embedded singulated capacitor layer containing at least one embedded singulated capacitor; and at least one planar capacitor laminate; wherein said planar capacitor laminate serves as a low inductance path to supply a charge to said at least one embedded singulated capacitor; and wherein said at least one embedded singulated capacitor is connected in parallel to at least one of the said planar capacitor laminates; and wherein said power core is interconnected to at least one signal layer.
Abstract:
A thick-film resistor component may include a thick film component formed between a thick-film resistor and an electrically conductive sheet, wherein a portion of the sheet is selectively removed to form resistor contacts while exposing a portion of the thick-film component. Electrical terminals to a thick-film resistor may be sized to reduce stress and/or be selectively positioned relative to the resistor to define a desired resistor value. A thick-film resistor may include one or more resistor segments configured to be selectively open-circuited to incrementally adjust the value of the resistor.
Abstract:
A capacitive/resistive device provides both resistive and capacitive functions. The capacitive/resistive device may be embedded within a layer of a printed wiring board. Embedding the capacitive/resistive device conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability. Conserves board surface real estate, and reduces the number of solder connections, thereby increasing reliability.
Abstract:
After a resistor and/or a capacitor are simultaneously fired on a fired ceramic core substrate to be fired, the fired resistor and/or the fired capacitor is trimmed so that the resistance and the capacitance are adjusted. Thereafter, an after-lamination green sheet is laminated onto the ceramic core substrate and the produced after-lamination substrate is fired at a temperature which is lower than the sintering temperature of the resistor and the dielectric. Thus, the sintered resistor and dielectric can be prevented from being softened and melted when the after-lamination substrate is fired. Moreover, the resistance and the capacitance accurately adjusted by trimming before the after-lamination substrate is fired are not changed by the firing.
Abstract:
A system and method for the fabrication of high reliability capacitors (1011), inductors (1012), and multi-layer interconnects (1013) (including resistors (1014)) on various thin film hybrid substrate surfaces (0501) is disclosed. The disclosed method first employs a thin metal layer (0502) deposited and patterned on the substrate (0501). This thin patterned layer (0502) is used to provide both lower electrodes for capacitor structures (0603) and interconnects (0604) between upper electrode components. Next, a dielectric layer (0705) is deposited over the thin patterned layer (0502) and the dielectric layer (0705) is patterned to open contact holes (0806) to the thin patterned layer. The upper electrode layers (0907, 0908, 1009, 1010) are then deposited and patterned on top of the dielectric (0705).
Abstract:
According to a flexible thin film capacitor of the present invention, an adhesive film is formed on a substrate composed of at least one selected from the group consisting of an organic polymer and a metal foil, and an inorganic high dielectric film and metal electrode films are formed thereon. A metal oxide adhesive film can be used as the adhesive film. The adhesive film is formed in contact with the inorganic high dielectric film and at least one of the metal electrode films.