公开(公告)号：US09034142B2

公开(公告)日：2015-05-19

申请号：US12642497

申请日：2009-12-18

申请人： Christopher M. Bartlett ,  Ming Li ,  Jon Henri ,  Marshall R. Stowell ,  Mohammed Sabri

发明人： Christopher M. Bartlett ,  Ming Li ,  Jon Henri ,  Marshall R. Stowell ,  Mohammed Sabri

IPC分类号： C23C16/52 ,  H01L21/306 ,  C23C16/455 ,  C23C16/44

CPC分类号： C23C16/52 ,  C23C16/4401 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  C23C16/458 ,  C23C16/46

摘要： A temperature controlled showerhead assembly for chemical vapor deposition (CVD) chambers enhances heat dissipation to provide accurate temperature control of the showerhead face plate and maintain temperatures substantially lower than surrounding components. Heat dissipates by conduction through a showerhead stem and removed by the heat exchanger mounted outside of the vacuum environment. Heat is supplied by a heating element inserted into the steam of the showerhead. Temperature is controlled using feedback supplied by a temperature sensor installed in the stem and in thermal contact with the face plate.

摘要翻译： 用于化学气相沉积（CVD）室的温度控制喷淋头组件增强散热以提供喷头面板的精确的温度控制并保持温度显着低于周围部件。 热量通过喷淋头传导并通过安装在真空环境外的热交换器除去。 热量由插入淋浴头蒸汽的加热元件提供。 使用由安装在杆上的温度传感器提供的反馈并与面板进行热接触来控制温度。

公开(公告)号：US08637411B2

公开(公告)日：2014-01-28

申请号：US13242084

申请日：2011-09-23

申请人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/469 ,  H01L21/31 ,  H01L21/311

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

公开(公告)号：US20120028454A1

公开(公告)日：2012-02-02

申请号：US13242084

申请日：2011-09-23

申请人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/225 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

公开(公告)号：US08100081B1

公开(公告)日：2012-01-24

申请号：US11515346

申请日：2006-08-31

申请人： Jon Henri ,  Henner Meinhold ,  Christopher Gage ,  Dan Doble

发明人： Jon Henri ,  Henner Meinhold ,  Christopher Gage ,  Dan Doble

IPC分类号： C23C16/452 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/02087 ,  C23F4/00 ,  H01J37/32385 ,  H01J37/32449 ,  H01L21/31138 ,  H01L21/6708

摘要： The present invention provides methods and apparatuses for removing unwanted film from the edge area of substrate using remotely-generated plasmas. Activated plasma species are directed to the edge of the substrate to contact and remove the unwanted film, while intrusion of the activated species to areas above the active circuit region (where the film is desired) is suppressed. In certain embodiments, intrusion of the activated species is suppressed by the use of a purge gas and/or the use of materials that promote recombination of plasma species. In particular embodiments, atomic oxygen is used to remove ashable films from the edge of semiconductor wafers.

摘要翻译： 本发明提供了使用远程产生的等离子体从衬底的边缘区域去除不想要的膜的方法和装置。 激活的等离子体物质被引导到基底的边缘以接触和去除不需要的膜，同时抑制活性物质侵入有源电路区域之上（其中需要膜）的区域。 在某些实施方案中，通过使用吹扫气体和/或促进等离子体物质重组的材料的使用来抑制活化物质的侵入。 在具体实施方案中，使用原子氧从半导体晶片的边缘去除可灰化膜。

公开(公告)号：US07915166B1

公开(公告)日：2011-03-29

申请号：US11710652

申请日：2007-02-22

申请人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

发明人： Yongsik Yu ,  Pramod Subramonium ,  Zhiyuan Fang ,  Jon Henri ,  Elizabeth Apen ,  Dan Vitkavage

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3212 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/311 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76867

摘要： Films having high hermeticity and a low dielectric constant can be used as copper diffusion barrier films, etch stop films, CMP stop films and other hardmasks during IC fabrication. Hermetic films can protect the underlying layers, such as layers of metal and dielectric, from exposure to atmospheric moisture and oxygen, thereby preventing undesirable oxidation of metal surfaces and absorption of moisture by a dielectric. Specifically, a bi-layer film having a hermetic bottom layer composed of hydrogen doped carbon and a low dielectric constant (low-k) top layer composed of low-k silicon carbide (e.g., high carbon content hydrogen doped silicon carbide) can be employed. Such bi-layer film can be deposited by PECVD methods on a partially fabricated semiconductor substrate having exposed layers of dielectric and metal.

摘要翻译： 在IC制造过程中，可以使用具有高气密性和低介电常数的膜作为铜扩散阻挡膜，蚀刻停止膜，CMP阻挡膜和其它硬掩模。 密封膜可以保护下面的层，例如金属和电介质层，暴露于大气中的水分和氧气，从而防止金属表面的不期望的氧化和电介质吸收水分。 具体而言，可以使用具有由氢掺杂碳组成的气密底层和由低k碳化硅构成的低介电常数（低k）顶层的双层膜（例如，高碳含量氢掺杂碳化硅） 。 这种双层膜可以通过PECVD方法沉积在具有暴露的介电层和金属层的部分制造的半导体衬底上。

公开(公告)号：US07704894B1

公开(公告)日：2010-04-27

申请号：US11602564

申请日：2006-11-20

申请人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

发明人： Jon Henri ,  Xingyuan Tang ,  Jason Tian ,  Kevin Gerber ,  Arul N. Dhas

IPC分类号： H01L21/461

CPC分类号： C23C16/402 ,  C23C16/50 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612

摘要： This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.

摘要翻译： 本发明提供了一种用于在多站顺序沉积室中沉积TEOS膜的高通量PECVD工艺。 这些方法显着减少了TEOS膜中的颗粒数量，从而消除或最小化了小槽缺陷。 本发明的方法涉及在吹扫气体的同时第一工作站进行温度浸泡。 停止反应气体的流动并流动站1的吹扫气体可消除冷晶片表面上的TEOS冷凝，并显着减少膜中缺陷的数量，特别是对于短温浸泡。

公开(公告)号：US5176790A

公开(公告)日：1993-01-05

申请号：US766481

申请日：1991-09-25

申请人： Paul Arleo ,  Jon Henri ,  Graham Hills ,  Jerry Wong ,  Robert Wu

发明人： Paul Arleo ,  Jon Henri ,  Graham Hills ,  Jerry Wong ,  Robert Wu

IPC分类号： H01L21/311 ,  H01L21/768

CPC分类号： H01L21/76802 ,  H01L21/31116

摘要： An improved process is described for forming one or more vias through an insulation layer by plasma etching to an underlying metal layer without depositing etch residues, including metal sputtered from the underlying metal layer, onto the sidewalls of the vias, which comprises, in one embodiment, using in the gaseous etchant one or more 3-6 carbon fluorinated hydrocarbons having the formula C.sub.x H.sub.y F.sub.z, wherein x is 3 to 6, y is 0 to 3, and z is 2x-y when the fluorinated hydrocarbon is cyclic and z is 2x-y+2 when the fluorinated hydrocarbon is noncyclic. One or more other fluorine-containing gases may also be used as long as the 3-6 carbon fluorinated hydrocarbons comprise at least 10 volume % of the fluorine-containing gas mixture. The fluorinated hydrocarbon gas or fluorine-containing gas mixture also may be mixed with up to 90 volume % total of one or more inert gases to control the taper of the via walls. At least about 5 sccm of the total gas flow must comprise a 3-6 carbon fluorinated hydrocarbon gas, regardless of the volume % of 3-6 carbon fluorinated hydrocarbon gas in the total gas stream flow. In another embodiment, a controlled amount of one or more nitrogen-containing gases are used with one or more fluorine-containing etchant gas wherein the amount of nitrogen-containing gas ranges from about 1 volume part nitrogen-containing gas per 15 volume parts fluorine-containing gas to about 1 volume part nitrogen-containing gas per 2 volume parts fluorine-containing gas.

摘要翻译： 描述了一种改进的方法，用于通过等离子体蚀刻到下面的金属层上形成一个或多个通孔，而不将包括从底层金属层溅射的金属的蚀刻残留物沉积到通孔的侧壁上，在一个实施例中包括 在气态蚀刻剂中使用具有式C x H y F z的一种或多种3-6碳氟化烃，其中x为3至6，y为0至3，当氟化烃为环状且z为2x- 当氟化烃为非环状时，y + 2。 也可以使用一种或多种其它含氟气体，只要3-6碳氟化烃包含至少10体积％的含氟气体混合物即可。 氟化烃气体或含氟气体混合物还可以与至多90体积％的一种或多种惰性气体混合以控制通孔壁的锥度。 总气流中至少约5sccm的气体必须包含3-6碳氟化烃气体，而不管总气流中的3-6碳氟化烃气体的体积百分数。 在另一个实施方案中，使用一种或多种含氮气体的受控量的一种或多种含氟气体，其中含氮气体的量为每15体积份含氟气体的约1体积份含氮气体， 每2体积份含氟气体含有约1体积份含氮气体。

公开(公告)号：US08435608B1

公开(公告)日：2013-05-07

申请号：US12163670

申请日：2008-06-27

申请人： Pramod Subramonium ,  Zhiyuan Fang ,  Shawn Hancock ,  Mike Pierce ,  Jon Henri

发明人： Pramod Subramonium ,  Zhiyuan Fang ,  Shawn Hancock ,  Mike Pierce ,  Jon Henri

IPC分类号： H05H1/24

CPC分类号： H01L21/0273 ,  C23C16/045 ,  C23C16/26 ,  C23C16/505 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/0337

摘要： Provided are plasma enhanced chemical vapor deposition methods of depositing smooth and conformal ashable hard mask films on substrates containing raised or recessed features. The methods involve using precursors having relatively high C:H ratios, such as acetylene (C:H ratio of 1), and plasmas having low ion energies and fluxes. According to various embodiments, the methods involve depositing smooth ashable hard mask films using high frequency radio frequency-generated plasmas with no low frequency component and/or relatively high pressures (e.g., 2-5 Torr). Also provided are methods of depositing ashable hard mask films having good selectivity and improved side wall coverage and roughness. The methods involve depositing a first ashable hard mask film on a substrate having a feature using a process optimized for selectivity and/or optical properties and then depositing a smoothing layer on the first ashable hard mask film using an HF-only process.

摘要翻译： 提供了等离子体增强化学气相沉积方法，其在含有凸起或凹陷特征的基底上沉积光滑和保形的可硬化硬掩模膜。 所述方法包括使用具有相对较高C:H比例的前体，例如乙炔（C：H比为1）和具有低离子能量和通量的等离子体。 根据各种实施方案，所述方法包括使用没有低频分量和/或相对高的压力（例如，2-5托）的高频无线电频率产生的等离子体沉积光滑的可硬化硬掩模薄膜。 还提供了具有良好选择性和改进的侧壁覆盖度和粗糙度的可沉积硬掩模膜的方法。 所述方法包括使用针对选择性和/或光学性质优化的方法在具有特征的基底上沉积第一可硬化硬掩模膜，然后使用仅HF工艺在第一可吸收硬掩模膜上沉积平滑层。

公开(公告)号：US08362571B1

公开(公告)日：2013-01-29

申请号：US13016660

申请日：2011-01-28

申请人： Qingguo Wu ,  James S. Sims ,  Mandyam Sriram ,  Seshasayee Varadarajan ,  Haiying Fu ,  Pramod Subramonium ,  Jon Henri ,  Sirish Reddy

发明人： Qingguo Wu ,  James S. Sims ,  Mandyam Sriram ,  Seshasayee Varadarajan ,  Haiying Fu ,  Pramod Subramonium ,  Jon Henri ,  Sirish Reddy

IPC分类号： H01L21/02

CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/7843 ,  H01L29/7848

摘要： Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor strain is generated is PMOS devices using a highly compressive post-salicide amorphous carbon capping layer applied as a blanket over on at least the source and drain regions. The stress from this capping layer is uniaxially transferred to the PMOS channel through the source-drain regions to create compressive strain in PMOS channel.

摘要翻译： 晶体管架构和制造工艺产生通道应变，而不会不利地影响晶体管制造工艺的效率，同时保持材料质量并增强所得晶体管的性能。 产生晶体管应变是使用在至少源极和漏极区上作为覆盖层施加的高度压缩的后自适应硅化物非晶碳覆盖层的PMOS器件。 来自该覆盖层的应力通过源极 - 漏极区域单轴转移到PMOS沟道，以在PMOS沟道中产生压缩应变。

公开(公告)号：US20120258261A1

公开(公告)日：2012-10-11

申请号：US13443668

申请日：2012-04-10

申请人： Sirish Reddy ,  Alice Hollister ,  Pramod Subramonium ,  Jon Henri ,  Chunhai Ji ,  Zhi Yuan Fang

发明人： Sirish Reddy ,  Alice Hollister ,  Pramod Subramonium ,  Jon Henri ,  Chunhai Ji ,  Zhi Yuan Fang

IPC分类号： B29B13/08

CPC分类号： H01L21/0332 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/31122 ,  H01L21/31144

摘要： A method for depositing a film includes arranging a substrate in a plasma enhanced chemical vapor deposition chamber. A first ashable hardmask (AHM) layer that is carbon-based is deposited on the substrate. During the depositing of the first AHM layer, doping is performed with at least one dopant selected from a group consisting of silicon, silane, boron, nitrogen, germanium, carbon, ammonia, and carbon dioxide. An atomic percentage of the at least one dopant is greater than or equal to 5% of the first AHM layer.

摘要翻译： 一种用于沉积膜的方法包括在等离子体增强化学气相沉积室中布置基板。 基于碳基的第一可灰化硬掩模（AHM）层被沉积在基底上。 在沉积第一AHM层期间，用至少一种选自硅，硅烷，硼，氮，锗，碳，氨和二氧化碳的掺杂剂进行掺杂。 至少一种掺杂剂的原子百分比大于或等于第一AHM层的5％。