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    REFLECTIVE LAYERS FOR LIGHT-EMITTING DIODES
    11.
    发明申请
    REFLECTIVE LAYERS FOR LIGHT-EMITTING DIODES 有权

    公开(公告)号：US20210050485A1

    公开(公告)日：2021-02-18

    申请号：US16963533

    申请日：2019-01-28

    Applicant: Cree, Inc.

    Inventor： Michael Check ,  Kevin Haberern

    IPC: H01L33/46

    Abstract: A light-emitting diode (LED) chip with reflective layers having high reflectivity is disclosed. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer. An adhesion layer may be provided between the first reflective layer and the second reflective layer. The adhesion layer may comprise a metal oxide that promotes improved adhesion with reduced optical losses.

    WAFER LEVEL PACKAGING OF MULTIPLE LIGHT EMITTING DIODES (LEDS) ON A SINGLE CARRIER DIE
    14.
    发明申请
    WAFER LEVEL PACKAGING OF MULTIPLE LIGHT EMITTING DIODES (LEDS) ON A SINGLE CARRIER DIE 审中-公开

    公开(公告)号：US20170271561A1

    公开(公告)日：2017-09-21

    申请号：US15493735

    申请日：2017-04-21

    Applicant: Cree, Inc.

    Inventor： Michael John Bergmann ,  Kevin Haberern ,  Alan Wellford Dillon

    IPC: H01L33/50

    Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.

    LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES
    17.
    发明申请
    LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 有权
    具有减少电流结构的发光装置

    公开(公告)号：US20130292639A1

    公开(公告)日：2013-11-07

    申请号：US13856928

    申请日：2013-04-04

    Applicant: Cree, Inc.

    Inventor： David Todd Emerson ,  Kevin Haberern ,  Michael John Bergmann ,  David B. Slater, JR. ,  Matthew Donofrio ,  John Edmond

    IPC: H01L33/14

    CPC classification number: H01L33/145 ,  H01L24/05 ,  H01L33/14 ,  H01L33/38 ,  H01L2224/49107 ,  H01L2933/0016

    Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

    Abstract translation: 发光器件包括p型半导体层，n型半导体层和p型半导体层和n型半导体层之间的有源区。 在与有源区相对的p型半导体层或n型半导体层之一上设置接合焊盘，所述接合焊盘与p型半导体层或n型半导体层中的一者电连接 。 导电指状物从接合焊盘延伸并与其电连接。 在与导电指状物对准的发光器件中设置降低的导电性区域。 还可以在接合焊盘和减小的导电区域之间设置反射器。 还可以在不与接合焊盘对准的发光器件中提供降低的导电性区域。

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