Abstract:
A dielectric circuit board foil (400, 600) includes a conductive metal foil layer (210, 660), a crystallized dielectric oxide layer (405, 655) disposed adjacent a first surface of the conductive metal foil layer, a lanthanum nickelate layer (414, 664) disposed on the crystallized dielectric oxide layer, and an electrode layer (415, 665) that is substantially made of one or more base metals disposed on the lanthanum nickelate layer. The foil (400, 600) may be adhered to a printed circuit board sub-structure (700) and used to economically fabricate a plurality of embedded capacitors, including isolated capacitors of large capacitive density (>1000 pf/mm2).
Abstract translation:电介质电路板箔(400,600)包括导电金属箔层(210,660),邻近导电金属箔层的第一表面设置的结晶介电氧化物层(405,655),镍酸镧层(414) ,664)和基本上由设置在镍酸镧层上的一种或多种贱金属制成的电极层(415,665)。 箔(400,600)可以粘附到印刷电路板子结构(700)上,并用于经济地制造多个嵌入式电容器,包括具有大电容密度(> 1000pf / mm 2)的隔离电容器, / SUP>)。
Abstract:
In one embodiment, a peelable circuit board foil (200) has a metal support layer (205) and a conductive metal foil layer (210) bonded by an inorganic release material (215). The conductive metal foil layer has an exposed surface (212) that is coated with a high temperature anti-oxidant barrier (220) and has a roughness less than 0.05 microns RMS. In a second embodiment, the peelable printed circuit foil (200) has a crystallized dielectric oxide layer (405) disposed on the exposed surface of the conductive metal foil layer and an electrode layer (415) disposed on the crystallized dielectric oxide layer, forming a dielectric peelable circuit board foil (400) that may be adhered to a layer of a flexible or rigid circuit board, after which the metal support layer can be peeled away, leaving a capacitive structure including the metal foil layer, the crystallized dielectric oxide layer, and the electrode layer.
Abstract:
A method is for fabricating an embedded capacitance printed circuit board assembly (400, 1100). The embedded capacitance printed circuit board assembly includes two embedded capacitance structures (110). Each capacitance structure (110) includes a crystallized dielectric oxide layer (115) sandwiched between an outer electrode layer (120) and an inner electrode layer (125) in which the two inner electrode layers are electrically connected together. A rivet via (1315) and a stacked via (1110) formed from a button via (910) and a stacked blind via (1111) may be used to electrically connect the two inner electrode layers together. A spindle via (525) may be formed through the inner and outer layers. The multi-layer printed circuit board may be formed from a capacitive laminate (100) that includes two capacitance structures.
Abstract:
A high impedance surface (300) has a printed circuit board (302) with a first surface (314) and a second surface (316), and a continuous electrically conductive plate (319) disposed on the second surface (316) of the printed circuit board (302). A plurality of electrically conductive plates (318) is disposed on the first surface (314) of the printed circuit board (302), while a plurality of elements are also provided. Each element comprises at least one of (1) at least one multi-layer inductor (330, 331) electrically coupled between at least two of the electrically conductive plates (318) and embedded within the printed circuit board (302), and (2) at least one capacitor (320) electrically coupled between at least two of the electrically conductive plates (318). The capacitor (320) comprises at least one of (a) a dielectric material (328) disposed between adjacent electrically conductive plates , wherein the dielectric material (328) has a relative dielectric constant greater than 6, and (b) a mezzanine capacitor embedded within the printed circuit board (302).
Abstract:
A textured dielectric panel (305, 520, 625, 745, 925, 1035, 1205) is fabricated by applying a first mask pattern (310, 510, 610, 710, 915, 1015, 1210) to a first side of a solid panel made of a first material that is a ceramic dielectric and then sandblasting the solid panel through the first mask pattern from the first side to at least partially generate a shaped cavity (315, 920, 1040). The shaped cavity of the solid panel may be filled with a-second material (330, 740). The first and second materials have substantially differing dielectric constants. The first side and second side of the solid panel may be metallized (325), forming a patch antenna. The shaped cavities can be made more complex by using additional masking and/or sandblasting steps.
Abstract:
A method of manufacturing a printed circuit board with a polymer thick-film (PTF) resistor whose dimensions can be defined with improved precision by providing a circuit board construction having a planar surface where the resistor is to be deposited. To achieve the desired board construction, the interconnect for the resistor is pattern plated using a permanent photodielectric layer as a plating mask instead of a sacrificial plating resist. The interconnect can be patterned before or after the PTF resistor ink is printed. The x and z dimensions (width and thickness, respectively) of the resistor are determined by the deposition process, while the y dimension (electrical length) is accurately determined by copper terminations.
Abstract:
In one embodiment, a peelable circuit board foil (200) has a metal support layer (205) and a conductive metal foil layer (210) bonded by an inorganic high temperature release structure (215) that comprises a co-deposited layer (250) and a metal oxide layer (260). The co-deposited layer comprises an admixture of nickel and one or more of boron, phosphorus, and chromium. In a second embodiment, the peelable printed circuit foil (200) has a crystallized dielectric oxide layer (405) disposed on the metal foil layer and an electrode layer (415) disposed on the crystallized dielectric oxide layer, forming a dielectric peelable circuit board foil (400) that may be adhered to a layer of a flexible or rigid circuit board, after which the metal support layer can be peeled away, leaving a capacitive structure including the metal foil layer, the crystallized dielectric oxide layer, and the electrode layer.
Abstract:
One of a plurality of capacitors embedded in a printed circuit structure includes a first electrode (415) overlaying a first substrate layer (505) of the printed circuit structure, a crystallized dielectric oxide core (405) overlaying the first electrode, a second electrode (615) overlying the crystallized dielectric oxide core, and a high temperature anti-oxidant layer (220) disposed between and contacting the crystallized dielectric oxide core and at least one of the first and second electrodes. The crystallized dielectric oxide core has a thickness that is less than 1 micron and has a capacitance density greater than 1000 pF/mm2. The material and thickness are the same for each of the plurality of capacitors. The crystallized dielectric oxide core may be isolated from crystallized dielectric oxide cores of all other capacitors of the plurality of capacitors.
Abstract translation:嵌入印刷电路结构中的多个电容器之一包括覆盖印刷电路结构的第一衬底层(505)的第一电极(415),覆盖第一电极的结晶化电介质氧化物芯(405),第二电极 615),以及设置在结晶的电介质氧化物芯和第一和第二电极中的至少一个之间并与其接触的高温抗氧化剂层(220)。 结晶的电介质氧化物芯的厚度小于1微米,电容密度大于1000pF / mm 2。 多个电容器的材料和厚度相同。 结晶的电介质氧化物芯可以与多个电容器的所有其它电容器的结晶的电介质氧化物芯隔离。
Abstract:
The invention provides an integrated device with corrosion-resistant capped bond pads. The capped bond pads include at least one aluminum bond pad on a semiconductor substrate. A layer of electroless nickel is disposed on the aluminum bond pad. A layer of electroless palladium is disposed on the electroless nickel, and a layer of immersion gold is disposed on the electroless palladium. A capped bond pad and a method of forming the capped bond pads are also disclosed.
Abstract:
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. Monocrystalline substrates having a hydrogen ion implant are cleaved along the hydrogen ion implant, and an insulating substrate is bonded to the monocrystalline oxide.