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49 条记录 (耗时 0.063 秒)

    METHOD FOR FORMING Cu WIRING
    12.
    发明申请
    METHOD FOR FORMING Cu WIRING 审中-公开
    形成铜线的方法

    公开(公告)号：US20120222782A1

    公开(公告)日：2012-09-06

    申请号：US13496714

    申请日：2010-08-27

    申请人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Tadahiro Ishizaka ,  Chiaki Yasumuro ,  Takara Kato

    发明人： Atsushi Gomi ,  Yasushi Mizusawa ,  Tatsuo Hatano ,  Osamu Yokoyama ,  Tadahiro Ishizaka ,  Chiaki Yasumuro ,  Takara Kato

    IPC分类号： C21D1/26 ,  B05D5/12 ,  B05D3/02

    CPC分类号： H01L23/53238 ,  H01L21/76829 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a Cu wiring forming method which is followed by a post-process including a treatment of a temperature of 500° C. or higher, an adhesion film made of a metal having a lattice spacing that differs from the lattice spacing of Cu by 10% or less is formed on a substrate having a trench and/or a hole in the surface such that the adhesion film is deposited on at least the bottom and side surfaces of the trench and/or hole. A Cu film is formed on the adhesion film to fill the trench and/or hole. An annealing process is performed on the substrate on which the Cu film has been formed at 350° C. or higher. The CU film is polished to leave only the part of the Cu film which corresponds to the trench and/or hole. A cap is formed on the polished Cu film to form a Cu wiring.

    摘要翻译： 在Cu布线形成方法中，其后是包括处理500℃或更高温度的后续处理，由具有不同于Cu的晶格间距的晶格间距的金属制成的粘合膜为10％ 或更少的表面形成在具有沟槽和/或孔的衬底上，使得粘附膜沉积在沟槽和/或孔的至少底部和侧表面上。 在粘合膜上形成Cu膜以填充沟槽和/或孔。 在其上形成有Cu膜的基板上进行退火处理为350℃以上。 CU膜被抛光以仅留下对应于沟槽和/或孔的Cu膜的部分。 在抛光的Cu膜上形成盖以形成Cu布线。

    Method of integrating PEALD Ta- containing films into Cu metallization
    15.
    发明申请
    Method of integrating PEALD Ta- containing films into Cu metallization 有权
    将含有PEALD的含Ta膜的Cu合金化的方法

    公开(公告)号：US20070218683A1

    公开(公告)日：2007-09-20

    申请号：US11378263

    申请日：2006-03-20

    申请人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    发明人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    IPC分类号： C23C16/00 ,  H05H1/00

    CPC分类号： C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

    摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

    摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

    Apparatus for thermal and plasma enhanced vapor deposition and method of operating
    16.
    发明申请
    Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开
    用于热和等离子体增强气相沉积的装置和操作方法

    公开(公告)号：US20070116873A1

    公开(公告)日：2007-05-24

    申请号：US11281376

    申请日：2005-11-18

    申请人： Yicheng Li ,  Tadahiro Ishizaka ,  Kaoru Yamamoto ,  Atsushi Gomi ,  Masamichi Hara ,  Toshiaki Fujisato ,  Jacques Faguet ,  Yasushi Mizusawa

    发明人： Yicheng Li ,  Tadahiro Ishizaka ,  Kaoru Yamamoto ,  Atsushi Gomi ,  Masamichi Hara ,  Toshiaki Fujisato ,  Jacques Faguet ,  Yasushi Mizusawa

    IPC分类号： H05H1/24 ,  C23C16/00 ,  G06F19/00

    CPC分类号： C23C16/45517 ,  C23C16/4401 ,  C23C16/4412 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32522

    摘要： A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.

    摘要翻译： 一种用于气相沉积在基板上的方法，计算机可读介质和系统，其将气相沉积系统的第一组件保持在第一温度，将气相沉积系统的第二组件保持在低于第一温度的降低的温度， 所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离，并且将材料沉积在所述衬底上。 因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接 并且被配置为支撑所述基板，以及密封组件，其被配置为将所述处理空间与所述传送空间分离。 第一组件被配置为保持在第一温度，并且第二组件构造成保持在低于第一温度的降低的温度。

    Plasma sputtering film deposition method and equipment
    18.
    发明授权
    Plasma sputtering film deposition method and equipment 有权
    等离子体溅射膜沉积方法和设备

    公开(公告)号：US07790626B2

    公开(公告)日：2010-09-07

    申请号：US11577505

    申请日：2005-10-18

    申请人： Taro Ikeda ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

    发明人： Taro Ikeda ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

    IPC分类号： H01L21/00

    CPC分类号： H01L21/2855 ,  C23C14/046 ,  C23C14/3471 ,  H01J37/34 ,  H01J2237/3327 ,  H01L21/76844 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

    摘要： The present invention relates to a technology for depositing a thin metal film by using a plasma sputtering technique on a top surface of a target object, e.g., a semiconductor wafer or the like, and on a surface of a recess opened at the top surface. The film deposition method is characterized in that a film deposition process to deposit a metal film on a sidewall of the recess by generating metal ions by way of making a metal target sputter with a plasma generated from a discharge gas in the processing container and by applying to the mounting table a bias power to cause a metal film deposition based on a metal ion attraction and a sputter etching based on the plasma generated from the discharge gas simultaneously on the top surface of the target object.

    摘要翻译： 本发明涉及通过使用等离子体溅射技术在目标物体（例如半导体晶片等）的顶面上以及在顶面开口的凹部的表面上沉积金属薄膜的技术。 膜沉积方法的特征在于，通过使金属靶溅射在处理容器中由放电气体产生的等离子体溅射金属离子，并且通过应用 在安装台上施加基于金属离子吸引的金属膜沉积和基于从放电气体产生的等离子体在目标物体的顶面上产生的溅射蚀刻的偏置功率。

    Plasma Sputtering Film Deposition Method and Equipment
    19.
    发明申请
    Plasma Sputtering Film Deposition Method and Equipment 审中-公开
    等离子体溅射膜沉积方法和设备

    公开(公告)号：US20080200002A1

    公开(公告)日：2008-08-21

    申请号：US11577535

    申请日：2005-10-18

    申请人： Kenji Suzuki ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

    发明人： Kenji Suzuki ,  Taro Ikeda ,  Tatsuo Hatano ,  Yasushi Mizusawa

    IPC分类号： H01L21/02 ,  H01L21/44 ,  C23C14/34

    CPC分类号： H01L21/2855 ,  C03C17/09 ,  C03C2218/153 ,  C03C2218/33 ,  C23C14/046 ,  C23C14/14 ,  C23C14/345 ,  C23C14/3464 ,  C23C14/352 ,  H01J37/32706 ,  H01J37/34 ,  H01L21/2885 ,  H01L21/76877

    摘要： A method for generating metal ions by sputtering a metal target (56) by plasma, attracting the metal ions by bias power to a target object S which is to be processed and is mounted on a mounting table (20) in a processing vessel, and depositing a metal film (74) on the target object having a recess (2) thus filling the recess. The bias power is set to realize such a state as the metal deposition rate by attraction of metal ions is substantially balanced with the etching rate of plasma sputter etching on the surface of the target object. Consequently, the recess in the target object can be filled with metal without causing such a defect as void.

    摘要翻译： 一种通过用等离子体溅射金属靶（56）来产生金属离子的方法，通过偏置功率将金属离子吸引到待处理的目标物体S上并安装在处理容器中的安装台（20）上，以及 在具有凹部（2）的目标物体上沉积金属膜（74），从而填充凹部。 偏置功率被设定为实现这样的状态，即通过金属离子的吸引的金属沉积速率与目标物体的表面上的等离子体溅射蚀刻的蚀刻速率基本平衡。 因此，目标物体中的凹部可以用金属填充，而不会造成空隙的缺陷。

    Method and apparatus for reducing particle contamination in a deposition system
    20.
    发明申请
    Method and apparatus for reducing particle contamination in a deposition system 有权
    用于减少沉积系统中的颗粒污染的方法和装置

    公开(公告)号：US20070215048A1

    公开(公告)日：2007-09-20

    申请号：US11377920

    申请日：2006-03-16

    申请人： Kenji Suzuki ,  Atsushi Gomi ,  Masamichi Hara ,  Yasushi Mizusawa

    发明人： Kenji Suzuki ,  Atsushi Gomi ,  Masamichi Hara ,  Yasushi Mizusawa

    IPC分类号： C23C16/00

    CPC分类号： C23C16/16 ,  C23C16/4481 ,  C23C16/45565 ,  C23C16/45568 ,  C23C16/45574

    摘要： A method and system is described for reducing particle contamination of a substrate in a deposition system. The deposition system comprises one or more particle diffusers disposed therein and configured to prevent or partially prevent the passage of film precursor particles, or break-up or partially break-up film precursor particles. The particle diffuser may be installed in the film precursor evaporation system, or the vapor delivery system, or the vapor distribution system, or two or more thereof.

    摘要翻译： 描述了用于减少沉积系统中的基底的颗粒污染的方法和系统。 沉积系统包括设置在其中的一个或多个颗粒扩散器，并且构造成防止或部分地防止膜前体颗粒通过，或破坏或部分破坏膜前体颗粒。 颗粒扩散器可以安装在膜前体蒸发系统或蒸汽输送系统或蒸汽分配系统中，或者其两个或多个。