利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

104 条记录 (耗时 0.072 秒)

    COAXIAL THROUGH-SILICON VIA
    12.
    发明申请
    COAXIAL THROUGH-SILICON VIA 有权
    同轴通过硅

    公开(公告)号：US20110095435A1

    公开(公告)日：2011-04-28

    申请号：US12607098

    申请日：2009-10-28

    申请人： Richard P. Volant ,  Mukta G. Farooq ,  Paul F. Findeis ,  Kevin S. Petrarca

    发明人： Richard P. Volant ,  Mukta G. Farooq ,  Paul F. Findeis ,  Kevin S. Petrarca

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A through-silicon via (TSV) structure forming a unique coaxial or triaxial interconnect within the silicon substrate. The TSV structure is provided with two or more independent electrical conductors insulated from another and from the substrate. The electrical conductors can be connected to different voltages or ground, making it possible to operate the TSV structure as a coaxial or triaxial device. Multiple layers using various insulator materials can be used as insulator, wherein the layers are selected based on dielectric properties, fill properties, interfacial adhesion, CTE match, and the like. The TSV structure overcomes defects in the outer insulation layer that may lead to leakage. A method of fabricating such a TSV structure is also described.

    摘要翻译： 硅通孔（TSV）结构在硅衬底内形成独特的同轴或三轴互连。 TSV结构设置有两个或更多个与另一个绝缘的独立电导体和与衬底绝缘的独立电导体。 电导体可以连接到不同的电压或接地，使得可以将TSV结构作为同轴或三轴装置进行操作。 使用各种绝缘材料的多层可用作绝缘体，其中根据介电性能，填充性能，界面粘合性，CTE匹配等来选择层。 TSV结构克服了外绝缘层中可能导致泄漏的缺陷。 还描述了制造这种TSV结构的方法。

    Self-contained heat sink and a method for fabricating same
    17.
    发明授权
    Self-contained heat sink and a method for fabricating same 失效
    独立散热片及其制造方法

    公开(公告)号：US06815813B1

    公开(公告)日：2004-11-09

    申请号：US10604211

    申请日：2003-07-01

    申请人： Timothy J. Dalton ,  Kevin S. Petrarca ,  Michelle L. Steen ,  Cornelia K. Tsang ,  Richard P. Volant

    发明人： Timothy J. Dalton ,  Kevin S. Petrarca ,  Michelle L. Steen ,  Cornelia K. Tsang ,  Richard P. Volant

    IPC分类号： H01L2334

    CPC分类号： H01L23/58 ,  H01L23/3677 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A system and method are provided for thermal dissipation from a heat producing electronic device. The system includes a substrate for fabricating integrated circuits, the substrate having a first face and a second face. The second face is disposed substantially parallel to the first face having an electronic device disposed therein. A metallized crack stop is disposed in the first face surrounding the electronic device. A plurality of first metal conduits extend through the substrate from the second face thereof to the crack stop, wherein each first metal conduit is in thermal contact with the crack stop to provide a thermal drain from the electronic device to the second face.

    摘要翻译： 提供了一种从制热电子设备散热的系统和方法。 该系统包括用于制造集成电路的基板，该基板具有第一面和第二面。 第二面基本上平行于第一面设置，其中设置有电子装置。 在电子设备周围的第一面设有金属化的裂纹停止件。 多个第一金属导管从其第二面延伸穿过基板到裂缝停止部，其中每个第一金属导管与裂纹停止件热接触以提供从电子装置到第二面的热耗散。

    Method of fabricating micro-electromechanical switches on CMOS compatible substrates
    18.
    发明授权
    Method of fabricating micro-electromechanical switches on CMOS compatible substrates 有权
    在CMOS兼容基板上制造微机电开关的方法

    公开(公告)号：US06798029B2

    公开(公告)日：2004-09-28

    申请号：US10434999

    申请日：2003-05-09

    申请人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    发明人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    IPC分类号： H01L2982

    CPC分类号： H01H59/0009 ,  H01H2059/0018 ,  H01H2059/0072

    摘要： A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    摘要翻译： 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。