公开(公告)号：US5086015A

公开(公告)日：1992-02-04

申请号：US394364

申请日：1989-08-15

申请人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Mikio Hongo

发明人： Fumikazu Itoh ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Mikio Hongo

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/76802 ,  Y10S148/046

摘要： A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning operation by a voltage applied to a deflection electrode; forming a first hole in the semiconductor device by the focused ion beam to a depth capable of reaching an insulating film formed between upper and lower wiring conductors so that the first hole has a curved bottom corresponding to the undulation of the upper wiring conductor, and the upper wiring conductor is absent at the bottom of the first hole; and scanning a portion of the bottom of the first hole with the focused ion beam to form a second hole in the insulating film to a depth capable of reaching the lower wiring conductor, thereby preventing the shorting between the upper and lower wiring conductors. Further, a method of forming a hole of a predetermined shape at a surface area having a step-like portion of a semiconductor device by an ion beam is disclosed which method comprises a pre-etching step of scanning the high-level region of the step-like portion with the ion beam so that the high-level region becomes equal in level to the low-level region of the step-like portion, and a main step of scanning the whole of the surface area with the ion beam till the hole of the predetermined shape is formed in the semiconductor device.

摘要翻译： 公开了一种通过离子束蚀刻具有多层布线的半导体器件的方法，该方法包括以下步骤：从高密度离子源提取高强度离子束; 聚焦提取的离子束; 使聚焦离子束通过施加到偏转电极的电压进行扫描操作; 通过所述聚焦离子束在所述半导体器件中形成第一孔至能够到达形成在上部和下部布线导体之间的绝缘膜的深度，使得所述第一孔具有对应于所述上部布线导体的起伏的弯曲底部，并且 上部布线导体在第一个孔的底部不存在; 并用聚焦离子束扫描第一孔的底部的一部分，以在绝缘膜中形成能够到达下布线导体的深度的第二孔，从而防止上布线导体和下布线导体之间的短路。 此外，公开了一种通过离子束在具有半导体器件的阶梯状部分的表面区域形成预定形状的孔的方法，该方法包括：扫描步骤的高级区域的预蚀刻步骤 具有离子束的部分，使得高级区域变得与阶梯状部分的低级区域相等，并且主要步骤是用离子束扫描整个表面积直到孔 在半导体器件中形成预定形状。

公开(公告)号：US07301146B2

公开(公告)日：2007-11-27

申请号：US11201222

申请日：2005-08-11

申请人： Satoshi Tomimatsu ,  Hidemi Koike ,  Junzo Azuma ,  Tohru Ishitani ,  Aritoshi Sugimoto ,  Yuichi Hamamura ,  Isamu Sekihara ,  Akira Shimase

发明人： Satoshi Tomimatsu ,  Hidemi Koike ,  Junzo Azuma ,  Tohru Ishitani ,  Aritoshi Sugimoto ,  Yuichi Hamamura ,  Isamu Sekihara ,  Akira Shimase

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： G01Q10/06 ,  G01N23/04 ,  G01N23/225 ,  G01R31/2886 ,  G01R31/311 ,  H01J37/28

摘要： A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.

摘要翻译： 探针驱动方法和探针装置，用于通过监测探针高度，以安全和有效的方式使探针与样品的表面接触。 通过检测在探针接触样品之前出现的探针阴影（54），或者基于探针图像和样品图像的相对位置的变化，获得关于来自样品表面的探针的高度的信息， 对角线照射离子束。

公开(公告)号：US06753253B1

公开(公告)日：2004-06-22

申请号：US07584180

申请日：1990-09-18

申请人： Takahiko Takahashi ,  Fumikazu Itoh ,  Akira Shimase ,  Mikio Hongo ,  Satoshi Haraichi ,  Hiroshi Yamaguchi

发明人： Takahiko Takahashi ,  Fumikazu Itoh ,  Akira Shimase ,  Mikio Hongo ,  Satoshi Haraichi ,  Hiroshi Yamaguchi

IPC分类号： H01L2144

CPC分类号： H01L23/544 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/30466 ,  H01J2237/31749 ,  H01L21/32051 ,  H01L21/768 ,  H01L21/76879 ,  H01L21/76888 ,  H01L21/76892 ,  H01L21/76894 ,  H01L22/22 ,  H01L23/525 ,  H01L23/5254 ,  H01L23/552 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05554 ,  H01L2224/05572 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01009 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01065 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1204 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3025 ,  Y10S438/94 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00012

摘要： Herein disclosed are a variety of techniques relating to the wiring and logic corrections on a chip by making use of the focused ion beam (which is shortly referred to as “FIB”) or the laser selection metal CVD. The time periods for the wiring corrections and for debugging and developing an electronic system are shortened by making use of the processing characteristics of the FIB. Illustratively, a hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a predetermined region on the insulating film are irradiated with either a laser beam or an ion beam in a metal compound gas to deposit metal in the hole and on said region and a connecting wiring is formed by means of optically pumped CVD. The present invention also relates to an IC or VLSI structure having a trial cutting region, at test etching region and an auxiliary wiring or pad, suitable for the application of such defect correction and circuit change, as well as a method of making same, a designing method using such technique, and a focused ion beam system and other systems for use in those methods.

摘要翻译： 这里公开了通过利用聚焦离子束（其被简称为“FIB”）或激光选择金属CVD与芯片上的布线和逻辑校正有关的各种技术。 通过利用FIB的处理特性，缩短布线校正和调试开发电子系统的时间。 示例性地，在通过聚焦离子束连接到另一布线的布线的一部分上方的绝缘膜中钻孔。 在绝缘膜的内部和绝缘膜上的预定区域用金属化合物气体中的激光束或离子束照射以在孔中和所述区域上沉积金属，并且通过光泵浦形成连接布线 CVD。 本发明还涉及一种IC或VLSI结构，其具有在测试蚀刻区域处的试验切割区域和适于应用这种缺陷校正和电路改变的辅助布线或焊盘，以及其制造方法 使用这种技术的设计方法，以及用于这些方法的聚焦离子束系统和其它系统。

公开(公告)号：US5342448A

公开(公告)日：1994-08-30

申请号：US40842

申请日：1993-03-31

申请人： Yuuichi Hamamura ,  Satoshi Haraichi ,  Akira Shimase ,  Junzou Azuma ,  Fumikazu Itoh ,  Toshio Yamada ,  Yasuhiro Koizumi ,  Michinobu Mizumura

发明人： Yuuichi Hamamura ,  Satoshi Haraichi ,  Akira Shimase ,  Junzou Azuma ,  Fumikazu Itoh ,  Toshio Yamada ,  Yasuhiro Koizumi ,  Michinobu Mizumura

IPC分类号： H01J37/244 ,  H01J37/317 ,  H01J37/30

CPC分类号： H01J37/317 ,  H01J37/244 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/2443 ,  H01J2237/24435 ,  H01J2237/304 ,  H01J2237/31744

摘要： A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.

摘要翻译： 使用带电束和反应性气体处理样品的方法以及使用其的系统的方法和方法，所述方法和系统能够执行反应性蚀刻和使用带电粒子检测器进行的束辅助沉积，其不会由于 反应气体。 该系统设计成使得以带电粒子检测器的形式提供快门机构，并且可以抽出用于容纳带电粒子检测器的室。 在样品的观察中，带电粒子检测器被打开以打开快门机构，并且在样品的处理中，带电粒子检测器被关闭或离开以关闭快门机构以将内部 带电粒子检测器。

公开(公告)号：US4933565A

公开(公告)日：1990-06-12

申请号：US216834

申请日：1988-07-08

申请人： Hiroshi Yamaguchi ,  Keiya Saito ,  Mitsuyoshi Koizumi ,  Akira Shimase ,  Satoshi Haraichi ,  Tateoki Miyauchi ,  Shinji Kuniyoshi ,  Susumu Aiuchi

发明人： Hiroshi Yamaguchi ,  Keiya Saito ,  Mitsuyoshi Koizumi ,  Akira Shimase ,  Satoshi Haraichi ,  Tateoki Miyauchi ,  Shinji Kuniyoshi ,  Susumu Aiuchi

IPC分类号： G01Q10/00 ,  G01Q70/14 ,  G03F1/00 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F1/74 ,  G03F1/22

摘要： The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a circuit pattern having a defective portion located under the region or setting this circuit pattern to the state near the exposure; detecting one of the secondary electrons, secondary ions, reflected electrons, or absorbing current generated from that region and detecting a true defective position. Then positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion thereby correcting the defect.

公开(公告)号：US4868068A

公开(公告)日：1989-09-19

申请号：US32753

申请日：1987-03-31

申请人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

发明人： Hiroshi Yamaguchi ,  Mikio Hongo ,  Tateoki Miyauchi ,  Akira Shimase ,  Satoshi Haraichi ,  Takahiko Takahashi ,  Keiya Saito

IPC分类号： B21C27/00 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H05K3/00 ,  H05K3/40

CPC分类号： H01L21/76879 ,  H01J37/3056 ,  H01L21/32051 ,  H01L21/67138 ,  H01L21/76892 ,  H05K3/0017 ,  H05K3/4076 ,  Y10S428/901 ,  Y10S438/94 ,  Y10S438/961 ,  Y10T428/12361 ,  Y10T428/31678

摘要： A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

摘要翻译： 一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线 多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。 覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为 通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而沉积在孔的表面上的区域和互连孔的区域，以形成导电金属膜， 导线。 还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体 电影蚀刻系统。

公开(公告)号：US4503329A

公开(公告)日：1985-03-05

申请号：US427584

申请日：1982-09-29

申请人： Hiroshi Yamaguchi ,  Tateoki Miyauchi ,  Akira Shimase ,  Mikio Hongo

发明人： Hiroshi Yamaguchi ,  Tateoki Miyauchi ,  Akira Shimase ,  Mikio Hongo

IPC分类号： G01Q10/00 ,  G01Q30/02 ,  G03F1/00 ,  G03F1/72 ,  G03F1/74 ,  H01J37/30 ,  H01J37/305 ,  H01L21/027 ,  H01L21/30 ,  G01N23/00

CPC分类号： H01L21/30 ,  G03F1/74 ,  H01J37/3007 ,  H01J37/3053 ,  H01J2237/0044 ,  H01J2237/0807

摘要： Disclosed is an ion beam processing apparatus comprising within a vacuum container a specimen chamber with a table for mounting a specimen provided therein, a high intensity ion source, such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low temperature, confronting the specimen chamber, an extraction electrode for extracting an ion beam out of the ion source, a charged-particle optical system for focusing the ion beam to a spot, and an aperture for adjusting the spot diameter.

摘要翻译： 公开了一种离子束处理装置，在真空容器内具有试样室，具有用于安装其中设置的试样的工作台，高强度离子源，例如液体金属离子源或电场离子源， 低温，对准样品室，用于从离子源中提取离子束的提取电极，用于将离子束聚焦到点的带电粒子光学系统和用于调节光斑直径的孔。

公开(公告)号：US4479060A

公开(公告)日：1984-10-23

申请号：US454027

申请日：1982-12-28

申请人： Hifumi Tamura ,  Tohru Ishitani ,  Akira Shimase

发明人： Hifumi Tamura ,  Tohru Ishitani ,  Akira Shimase

IPC分类号： H01J37/073 ,  G01Q30/20 ,  H01J37/08 ,  H01J37/10 ,  H01J37/12 ,  H01J37/252 ,  H01J3/14 ,  G01N23/04 ,  G01N23/225

CPC分类号： H01J37/10 ,  H01J37/252

摘要： An apparatus according to the present invention for irradiating a specimen with charged particle beams comprises a single charged particle generating source from which the charged particle beams formed of electrons and negative ions, respectively, can be simultaneously derived; a specimen holder on which the specimen is placed; and charged particle irradiation means which is interposed between the charged particle generating source and the specimen holder in order to focus the charged particle beams and to irradiate the surface of the specimen with the focused beams, and which includes at least one magnetic lens and at least one electrostatic lens that are individually disposed.

摘要翻译： 根据本发明的用于用带电粒子束照射样本的装置包括单个带电粒子发生源，可以同时衍生由电子和负离子形成的带电粒子束; 放置样品的样品架; 以及带电粒子照射装置，其被插入在带电粒子发生源和样本保持器之间，以便聚焦带电粒子束并用聚焦束照射样本的表面，并且至少包括至少一个磁性透镜 一个静电透镜单独设置。

公开(公告)号：US07865012B2

公开(公告)日：2011-01-04

申请号：US11586721

申请日：2006-10-26

申请人： Toshiyuki Majima ,  Akira Shimase ,  Hirotoshi Terada ,  Kazuhiro Hotta

发明人： Toshiyuki Majima ,  Akira Shimase ,  Hirotoshi Terada ,  Kazuhiro Hotta

IPC分类号： G06K9/00

CPC分类号： G01N21/95607 ,  G01N2021/95615

摘要： A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure. The failure analyzer 13 extracts as a candidate interconnection for a failure, an interconnection passing an analysis region, out of a plurality of interconnections, using interconnection information to describe a configuration of interconnections in the semiconductor device by a pattern data group of interconnection patterns in respective layers, and, for extracting the candidate interconnection, it performs an equipotential trace of the interconnection patterns using the pattern data group, thereby extracting the candidate interconnection. This substantializes a semiconductor failure analysis apparatus, failure analysis method, and failure analysis program capable of securely and efficiently performing the analysis of the failure of the semiconductor device using the failure observed image.

摘要翻译： 故障分析装置10由用于获取半导体装置的故障观察图像P2的检查信息获取部11，用于获取布局信息的布局信息获取部12以及用于分析故障的故障分析部13构成。 故障分析器13通过互连信息提取出故障的候选互连，通过分析区域的互连，使用互连信息，以通过相应的互连模式的图案数据组来描述半导体器件中的互连的配置 并且为了提取候选互连，它使用模式数据组来执行互连模式的等势线，从而提取候选互连。 这实现了半导体故障分析装置，故障分析方法和故障分析程序，其能够安全有效地执行使用故障观察图像的半导体器件的故障的分析。

公开(公告)号：US06303932B1

公开(公告)日：2001-10-16

申请号：US09195711

申请日：1998-11-19

申请人： Yuichi Hamamura ,  Akira Shimase ,  Junzou Azuma ,  Michinobu Mizumura ,  Norimasa Nishimura ,  Yasuhiro Koizumi ,  Hidemi Koike

发明人： Yuichi Hamamura ,  Akira Shimase ,  Junzou Azuma ,  Michinobu Mizumura ,  Norimasa Nishimura ,  Yasuhiro Koizumi ,  Hidemi Koike

IPC分类号： H01J37244

CPC分类号： H01J37/28 ,  H01J2237/004 ,  H01J2237/2817

摘要： A secondary charged particle image acquisition method and its apparatus for detecting a secondary charged particle image. The method includes the steps of irradiating a surface of a specimen with a focused charged particle beam and detecting a secondary charged particle emanated from the surface of the specimen, obtaining a secondary charged particle image based on the detected secondary charged particle, irradiating a positive ion beam on the surface of the specimen where the focused charged particle beam is irradiated and inducing a conductive layer on the surface of the specimen by the irradiation of the positive ion beam and diffusing an electric charge on the surface of the conductive layer.

摘要翻译： 二次带电粒子图像采集方法及其装置，用于检测二次带电粒子图像。 该方法包括以下步骤：用聚焦的带电粒子束照射样品的表面并检测从样品表面发出的二次带电粒子，基于检测到的二次带电粒子获得二次带电粒子图像，照射正离子 在被照射聚焦的带电粒子束的样品的表面上射束，并通过正离子束的照射在样品的表面上引导导电层，并在导电层的表面上扩散电荷。