Method for metallizing a rubber surface and structure
    11.
    发明申请
    Method for metallizing a rubber surface and structure 审中-公开
    用于金属化橡胶表面和结构的方法

    公开(公告)号:US20060003169A1

    公开(公告)日:2006-01-05

    申请号:US10883291

    申请日:2004-06-30

    Abstract: A method for applying a metal layer to silicon rubber is described. A polyurethane (PU) primer is applied and cured before application of the metal layer. The metal layer can be applied on a PU-coated silicon rubber material or article by vacuum metallization, chemical plating, electrical plating or physical vapor deposition, and preferably by sputtering. The coated metal layer manufactured by the disclosure herein shows high resistance to thermal and oxidative degradations and also has high resistance to water absorption in the work environment.

    Abstract translation: 描述了一种将金属层施加到硅橡胶上的方法。 在施加金属层之前涂布并固化聚氨酯(PU)底漆。 金属层可以通过真空金属化,化学镀,电镀或物理气相沉积,优选通过溅射涂覆在PU涂覆的硅橡胶材料或制品上。 由本文公开的制造的涂覆金属层显示出高的耐热性和氧化性降解性,并且在工作环境中也具有高的吸水性。

    System and method for dampening high pressure impact on porous materials
    12.
    发明授权
    System and method for dampening high pressure impact on porous materials 失效
    用于抑制高压冲击多孔材料的系统和方法

    公开(公告)号:US06875285B2

    公开(公告)日:2005-04-05

    申请号:US10422339

    申请日:2003-04-24

    CPC classification number: H01L21/31116 B08B7/0021 H01L21/02052

    Abstract: System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.

    Abstract translation: 当在高压下使用清洁流体以清洁半导体衬底时,减少对半导体衬底的损伤的系统和方法。 优选实施例包括在第一时间段内施加第一压力的清洁流体,其中第一压力相对较低,然后将清洁流体的压力提高到可以有效地清洁半导体衬底并保持压力的压力水平 水平第二次。 以相对较低的初始压力施加清洁流体作为临时填料并在半导体衬底上产生清洗液的缓冲液,并且有助于抑制随后的高压施加清洁流体对半导体衬底的冲击。

    Polishing pad conditioning disks for chemical mechanical polisher
    13.
    发明授权
    Polishing pad conditioning disks for chemical mechanical polisher 有权
    用于化学机械抛光机的抛光垫调节盘

    公开(公告)号:US06872127B2

    公开(公告)日:2005-03-29

    申请号:US10194894

    申请日:2002-07-11

    CPC classification number: B24B53/017 B24B53/12

    Abstract: The invention relates to disks for conditioning pads used in the chemical mechanical polishing of semiconductor wafers, and a method of fabricating the pads. In one embodiment, the conditioning pad includes multiple, pyramid-shaped, truncated protrusions which are cut or shaped in the surface of a typically stainless steel substrate. Each of the truncated protrusions includes a plateau in the top thereof. A seed layer, typically titanium nitride (TiN), is provided on the surface of the protrusions, and a contact layer such as diamond-like carbon (DLC) or other suitable film is provided over the seed layer. In another embodiment, each of the protrusions is pyramid-shaped and includes a pointed apex at the top thereof.

    Abstract translation: 本发明涉及用于半导体晶片的化学机械抛光中的调节垫的盘及其制造方法。 在一个实施例中,调节垫包括在典型的不锈钢衬底的表面中切割或成形的多个金字塔形的截头突起。 每个截头突起在其顶部包括平台。 在突起的表面上提供种子层,通常为氮化钛(TiN),并且在种子层上提供诸如类金刚石碳(DLC)等接触层或其它合适的膜。 在另一个实施例中,每个突起是金字塔形的,并且在其顶部包括尖顶。

    Method for manufacturing optical element
    16.
    发明申请
    Method for manufacturing optical element 审中-公开
    光学元件制造方法

    公开(公告)号:US20070171529A1

    公开(公告)日:2007-07-26

    申请号:US11724204

    申请日:2007-03-15

    Applicant: Ping Chuang

    Inventor: Ping Chuang

    CPC classification number: G02B5/124 G02B5/021 G02B5/0278

    Abstract: The present invention provides an optical element for diffusing and focusing light. The optical element comprises an optical substrate and a plurality of convexes thereon, wherein the convexes are micrometer-scaled or smaller pyramid structures.

    Abstract translation: 本发明提供一种用于扩散和聚焦光的光学元件。 光学元件包括光学基底和其上的多个凸起,其中凸起是微米级或更小的金字塔结构。

    Prism manufacturing method
    17.
    发明申请
    Prism manufacturing method 审中-公开
    棱镜制造方法

    公开(公告)号:US20060249863A1

    公开(公告)日:2006-11-09

    申请号:US11174648

    申请日:2005-07-06

    Applicant: Ping Chuang

    Inventor: Ping Chuang

    Abstract: The present invention describes a prism manufacturing method. According to the method, a semiconductor process method is applied to a wafer for forming a master mold. Then, an electroform process is applied to the master mold for forming a mold. The mold can be used to mass-produce prisms by a well-known manufacturing method.

    Abstract translation: 本发明描述了棱镜制造方法。 根据该方法,将半导体处理方法应用于用于形成母模的晶片。 然后,将电铸方法应用于用于形成模具的母模。 该模具可以用于通过公知的制造方法批量生产棱镜。

    Flexible land grid array connector
    18.
    发明授权
    Flexible land grid array connector 失效
    灵活的土地格栅阵列连接器

    公开(公告)号:US07021941B1

    公开(公告)日:2006-04-04

    申请号:US10969369

    申请日:2004-10-19

    Abstract: An LGA connector is used to interconnect an LGA package and a printed circuit board. The LGA connector includes an elastomeric body with a plurality of through-holes. Metal films are formed on inner walls of through-holes and splay out around the mouths of their upper and lower openings. The metal films are formed by vacuum metallization, sputtering, chemical plating, electrical plating or PVD. The through-holes have a funnel-like shape to absorb external stresses and redirect the stress to shrink the through-hole diameters. Moreover, the metal films' elastic deformation is larger than conventional metal conductive fillers so as to improve reliability.

    Abstract translation: LGA连接器用于连接LGA封装和印刷电路板。 LGA连接器包括具有多个通孔的弹性体。 金属膜形成在通孔的内壁上,并在其上部和下部开口的嘴部周围张开。 金属膜通过真空金属化,溅射,化学镀,电镀或PVD形成。 通孔具有漏斗形形状以吸收外部应力并且重定向应力以收缩通孔直径。 此外,金属膜的弹性变形大于常规金属导电填料,从而提高可靠性。

    Method and composition to improve a nitride/oxide wet etching selectivity
    19.
    发明授权
    Method and composition to improve a nitride/oxide wet etching selectivity 有权
    改善氮化物/氧化物湿蚀刻选择性的方法和组合物

    公开(公告)号:US06987064B2

    公开(公告)日:2006-01-17

    申请号:US10274603

    申请日:2002-10-21

    CPC classification number: H01L21/31111

    Abstract: A method for wet etching a metal nitride containing layer overlying a silicon oxide containing layer in a semiconductor device or micro-electro-mechanical device manufacturing process including providing a substrate including a silicon oxide containing layer and an overlying exposed metal nitride containing layer; providing a wet etching solution including phosphoric acid and water; adding a silicon containing compound which undergoes a hydrolysis reaction in the wet etching solution; and, contacting the exposed metal nitride containing layer with the wet etching solution for a period of time to remove the metal nitride containing layer.

    Abstract translation: 一种用于在半导体器件中湿式蚀刻覆盖含氧化硅的层的含金属氮化物层的方法或微机电装置制造方法,包括提供包含含氧化硅的层和覆盖的暴露的金属氮化物含有层的衬底; 提供包含磷酸和水的湿蚀刻溶液; 在湿蚀刻溶液中加入经历水解反应的含硅化合物; 并且将暴露的含金属氮化物层与湿蚀刻溶液接触一段时间以除去含金属氮化物层。

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