Abstract:
A method for applying a metal layer to silicon rubber is described. A polyurethane (PU) primer is applied and cured before application of the metal layer. The metal layer can be applied on a PU-coated silicon rubber material or article by vacuum metallization, chemical plating, electrical plating or physical vapor deposition, and preferably by sputtering. The coated metal layer manufactured by the disclosure herein shows high resistance to thermal and oxidative degradations and also has high resistance to water absorption in the work environment.
Abstract:
System and method for reducing damage to a semiconductor substrate when using cleaning fluids at elevated pressures to clean the semiconductor substrates. A preferred embodiment comprises applying the cleaning fluid at a first pressure for a first time period, wherein the first pressure is relatively low, and then increasing the pressure of the cleaning fluid to a pressure level that can effectively clean the semiconductor substrate and maintaining the pressure level for a second time period. The application of the cleaning fluid at the relatively low initial pressure acts as a temporary filler and creates a buffer of the cleaning fluid on the semiconductor substrate and helps to dampen the impact of the subsequent high pressure application of the cleaning fluid on the semiconductor substrate.
Abstract:
The invention relates to disks for conditioning pads used in the chemical mechanical polishing of semiconductor wafers, and a method of fabricating the pads. In one embodiment, the conditioning pad includes multiple, pyramid-shaped, truncated protrusions which are cut or shaped in the surface of a typically stainless steel substrate. Each of the truncated protrusions includes a plateau in the top thereof. A seed layer, typically titanium nitride (TiN), is provided on the surface of the protrusions, and a contact layer such as diamond-like carbon (DLC) or other suitable film is provided over the seed layer. In another embodiment, each of the protrusions is pyramid-shaped and includes a pointed apex at the top thereof.
Abstract:
A method and system for monitoring the quality of a slurry utilized in a chemical mechanical polishing operation. A slurry is generally delivered through a tubular path during a chemical mechanical polishing operation. A laser light is generally transmitted from a laser light source, such that the laser light comes into contact with the slurry during the chemical mechanical polishing operation. The laser light can then be detected, after the laser light comes into contact with the slurry to thereby monitor the quality of the slurry utilized during the chemical mechanical polishing operation. The laser light that comes into contact with the slurry can be also be utilized to monitor a mixing ratio associated with the slurry.
Abstract:
An organic layer, such as a porous low-K dielectric in an IC, contains pores open at its surface. To close the pores, the organic layer is contacted by a supercritical fluid that is a solvent for the layer. After a small amount of the surface and the wall of the open pores is solvated, a phase transition of the solvated organic material is effected at the surface to cover it with a dense, smooth, non-porous film that seals the open pores.
Abstract:
The present invention provides an optical element for diffusing and focusing light. The optical element comprises an optical substrate and a plurality of convexes thereon, wherein the convexes are micrometer-scaled or smaller pyramid structures.
Abstract:
The present invention describes a prism manufacturing method. According to the method, a semiconductor process method is applied to a wafer for forming a master mold. Then, an electroform process is applied to the master mold for forming a mold. The mold can be used to mass-produce prisms by a well-known manufacturing method.
Abstract:
An LGA connector is used to interconnect an LGA package and a printed circuit board. The LGA connector includes an elastomeric body with a plurality of through-holes. Metal films are formed on inner walls of through-holes and splay out around the mouths of their upper and lower openings. The metal films are formed by vacuum metallization, sputtering, chemical plating, electrical plating or PVD. The through-holes have a funnel-like shape to absorb external stresses and redirect the stress to shrink the through-hole diameters. Moreover, the metal films' elastic deformation is larger than conventional metal conductive fillers so as to improve reliability.
Abstract:
A method for wet etching a metal nitride containing layer overlying a silicon oxide containing layer in a semiconductor device or micro-electro-mechanical device manufacturing process including providing a substrate including a silicon oxide containing layer and an overlying exposed metal nitride containing layer; providing a wet etching solution including phosphoric acid and water; adding a silicon containing compound which undergoes a hydrolysis reaction in the wet etching solution; and, contacting the exposed metal nitride containing layer with the wet etching solution for a period of time to remove the metal nitride containing layer.
Abstract:
An organic layer, such as a porous low-K dielectric in an IC, contains pores open at its surface. To close the pores, the organic layer is contacted by a supercritical fluid that is a solvent for the layer. After a small amount of the surface and the wall of the open pores is solvated, a phase transition of the solvated organic material is effected at the surface to cover it with a dense, smooth, non-porous film that seals the open pores.