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79 条记录 (耗时 0.031 秒)

    System and method for providing color light sources in proximity to predetermined wavelength conversion structures
    12.
    发明授权
    System and method for providing color light sources in proximity to predetermined wavelength conversion structures 有权
    用于在预定波长转换结构附近提供彩色光源的系统和方法

    公开(公告)号：US08740413B1

    公开(公告)日：2014-06-03

    申请号：US13328978

    申请日：2011-12-16

    申请人： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

    发明人： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

    IPC分类号： F21V9/00 ,  F21V9/16 ,  F21V21/00 ,  H01J63/04 ,  H01L33/00

    CPC分类号： H01L33/504 ,  F21K9/00 ,  F21K9/232 ,  F21V29/70 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

    摘要翻译： 光学装置包括具有至少两个辐射源的光源和由辐射源激发的至少两层波长改变材料，所述辐射源以至少两个预定波长发射辐射。 实施例包括被配置为发射第一波长的辐射的第一多个n个辐射源。 所述第一多个辐射源接近配置成发射第二波长的辐射的第二多个m个辐射源，所述第二波长比所述第一波长短。 m和n之间的比率是预定的。 所公开的光学装置还包括至少两个波长转换层，使得第一波长转换层被配置为吸收由第二辐射源发射的辐射的一部分，以及第二波长转换层，其被配置为吸收由第二波长转换层发射的辐射的一部分 第二辐射源。

    Laser diode and method for fabricating same
    13.
    发明授权
    Laser diode and method for fabricating same 有权
    激光二极管及其制造方法

    公开(公告)号：US08679876B2

    公开(公告)日：2014-03-25

    申请号：US12826305

    申请日：2010-06-29

    申请人： Arpan Chakraborty ,  Monica Hansen ,  Steven Denbaars ,  Shuji Nakamura ,  George Brandes

    发明人： Arpan Chakraborty ,  Monica Hansen ,  Steven Denbaars ,  Shuji Nakamura ,  George Brandes

    IPC分类号： H01L21/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/3406

    摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.

    摘要翻译： 一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。 在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。 顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。 因此，n型SLS可以以增加的Al百分数生长以增加折射率。 这与其他功能一起允许降低阈值电流和电压操作。

    Wafer level phosphor coating technique for warm light emitting diodes
    16.
    发明授权
    Wafer level phosphor coating technique for warm light emitting diodes 有权
    用于暖光发光二极管的晶圆级磷光体涂层技术

    公开(公告)号：US08232564B2

    公开(公告)日：2012-07-31

    申请号：US12287764

    申请日：2008-10-13

    申请人： Arpan Chakraborty

    发明人： Arpan Chakraborty

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/44 ,  H01L23/3114 ,  H01L33/38 ,  H01L33/504 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0041

    摘要： Methods for wafer level fabricating of light emitting diode (LED) chips are disclosed with one embodiment of a method according to the present invention comprising providing a plurality of LEDs and then coating of the LEDs with a layer of first conversion material so that at least some light from the LEDs passes through the first conversion material. The light is converted to different wavelengths of light having a first conversion material emission spectrum. The LEDs are then coated with a layer of second conversion material arranged on the first layer of conversion. The second conversion material has a wavelength excitation spectrum, and at least some light from the LEDs passes through the second conversion material and is converted. The first conversion material emission spectrum does not substantially overlap with the second conversion material excitation spectrum. Methods according to the present invention can also be used in wafer level fabrication of LED chips and LED packages with pedestals for electrically contacting the LEDs through the conversion coatings.

    摘要翻译： 公开了根据本发明的方法的一个实施例的用于发光二极管（LED）芯片的晶片级制造的方法，包括提供多个LED，然后用一层第一转换材料涂覆LED，使得至少一些 来自LED的光通过第一转换材料。 光被转换成具有第一转换材料发射光谱的不同波长的光。 然后用布置在第一转换层上的第二转换材料层涂覆LED。 第二转换材料具有波长激发光谱，并且来自LED的至少一些光通过第二转换材料并被转换。 第一转换材料发射光谱基本上不与第二转换材料激发光谱重叠。 根据本发明的方法也可用于具有用于通过转换涂层电接触LED的基座的LED芯片和LED封装的晶片级制造。

    TECHNIQUES FOR ACHIEVING LOW RESISTANCE CONTACTS TO NONPOLAR AND SEMIPOLAR P-TYPE (Al,Ga,In)N
    17.
    发明申请
    TECHNIQUES FOR ACHIEVING LOW RESISTANCE CONTACTS TO NONPOLAR AND SEMIPOLAR P-TYPE (Al,Ga,In)N 审中-公开
    用于实现非绝缘和双极P型（Al，Ga，In）N的低电阻接触的技术

    公开(公告)号：US20110169138A1

    公开(公告)日：2011-07-14

    申请号：US12909702

    申请日：2010-10-21

    申请人： You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

    发明人： You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

    IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L21/28

    CPC分类号： H01L21/02389 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/40 ,  H01L2933/0016

    摘要： A method of fabricating a p-type contact on a nonpolar or semipolar (Al,Ga,In)N device, includes the steps of growing a p-type layer on an (Al,Ga,In)N device, wherein the (Al,Ga,In)N device is a nonpolar or semipolar (Al,Ga,In)N device, and the p-type layer is a nonpolar or semipolar (Al,Ga,In)N layer; and cooling the p-type layer down, in the presence of Bis(Cyclopentadienyl)Magnesium (Cp2Mg), to form a magnesium-nitride (MgxNy) layer on the p-type layer. A metal deposition is performed to fabricate a p-type contact on the p-type layer of the (Al,Ga,In)N device, after the cooling step, wherein the p-type contact has a contact resistivity lower than a p-type contact of a polar (Al,Ga,In)N device with substantially similar composition. A hydrogen chloride (HCl) pre-treatment of the p-type layer may be performed, after the cooling step and before the metal deposition step.

    摘要翻译： 在非极性或半极性（Al，Ga，In）N器件上制造p型接触的方法包括在（Al，Ga，In）N器件上生长p型层的步骤，其中（Al ，Ga，In）N器件是非极性或半极性（Al，Ga，In）N器件，p型层是非极性或半极性（Al，Ga，In）N层; 并在双（环戊二烯基）镁（Cp2Mg）的存在下，向下冷却p型层，以在p型层上形成氮化镁（Mg x N y）层。 在冷却步骤之后，进行金属沉积以在（Al，Ga，In）N器件的p型层上制造p型接触，其中p型接触的接触电阻低于p- 极性（Al，Ga，In）N器件的类型接触具有基本相似的组成。 可以在冷却步骤之后和金属沉积步骤之前进行p型层的氯化氢（HCl）预处理。

    LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES
    19.
    发明申请
    LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al,Ga,In)N BASED LASER DIODES 审中-公开
    长波长无光和二极管（Al，Ga，In）N基激光二极管

    公开(公告)号：US20100309943A1

    公开(公告)日：2010-12-09

    申请号：US12795360

    申请日：2010-06-07

    申请人： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

    发明人： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

    IPC分类号： H01S5/00 ,  H01L21/20

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2022 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3216

    摘要： A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.

    摘要翻译： 与常规激光二极管结构相比，激光二极管（1）n型层在氮载气中生长，其中激光二极管生长在杂交非极性或半极性衬底上，具有较低的阈值电流密度和较长的受激发射波长， （2）与其他器件层相比，量子阱层和阻挡层以较慢的生长速率生长（使得能够在较高温度下生长p型层），（3）高Al含量的电子阻挡层能使上述层生长 在较高温度下的有源区，和（4）不对称的AlGaN SPSLS允许含高Al含量的p-AlGaN层的生长。 使用各种其它技术来改善p型层的导电性并使接触层的接触电阻最小化。