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公开(公告)号：US20190189844A1
公开(公告)日：2019-06-20
申请号：US16011783
申请日：2018-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Gun LEE , Yong Il KIM , Jin Sub LEE
CPC classification number: H01L33/105 , H01L33/06 , H01L33/305 , H01L33/42
Abstract: A semiconductor light emitting device includes a first light emitting portion including a first semiconductor stack, as well as a first lower dispersion Bragg reflector (DBR) layer and a first upper dispersion Bragg reflector (DBR) layer, disposed above and below the first semiconductor stack, a second light emitting portion including a second semiconductor stack, as well as a second lower dispersion Bragg reflector (DBR) layer and a second upper dispersion Bragg reflector (DBR) layer, disposed above and below the second semiconductor stack, a third light emitting portion including a third semiconductor stack, as well as a third lower dispersion Bragg reflector (DBR) layer and a third upper dispersion Bragg reflector (DBR) layer, disposed above and below the third semiconductor stack, a first bonding layer disposed between the first light emitting portion and the second light emitting portion, and a second bonding layer disposed between the second light emitting portion and the third light emitting portion.
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公开(公告)号：US20190189595A1
公开(公告)日：2019-06-20
申请号：US16008276
申请日：2018-06-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong Gun LEE , Yong Il KIM , Hye Seok NOH , Han Kyu SEONG , Sung Hyun SIM , Ha Nul YOO
CPC classification number: H01L25/0753 , H01L27/1214 , H01L33/06 , H01L33/30 , H01L33/32 , H01L33/405 , H01L33/504 , H01L33/505 , H01L33/508 , H01L33/54 , H01L33/60 , H01L33/62 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058
Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.
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13.发明申请公开(公告)号：US20170236866A1
公开(公告)日：2017-08-17
申请号：US15352933
申请日：2016-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Sub LEE , Han Kyu SEONG , Yong Il KIM , Jung Sub KIM , Seul Gee LEE
CPC classification number: H01L27/156 , H01L25/0753 , H01L25/167 , H01L27/153 , H01L33/0095 , H01L33/44 , H01L33/502 , H01L33/504 , H01L33/505 , H01L2933/0041 , H05B33/0845 , H05B33/086 , H05B37/0272
Abstract: A pixel of a light emitting diode module, display panel or other device, may comprise different colored sub-pixels, where one of the sub-pixels comprises a wavelength converting material, such as phosphor, to convert light emitted from an associated light emitting diode of that sub-pixel into a color other than the main color of light emitted from that sub-pixel. The wavelength converting material may have an amount selected to tune the color coordinates of the pixel. The amount of wavelength converting material may be determined in response to measuring the intensity of the spectrum of light emitted by the light emitting diode of the sub-pixel, or similarly manufactured sub-pixels, on which the wavelength converting material is to be formed. Methods of manufacturing the same are also disclosed.
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公开(公告)号：US20220246803A1
公开(公告)日：2022-08-04
申请号：US17720923
申请日：2022-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young Jo TAK , Joo Sung KIM , Jong Uk SEO , Dong Gun LEE , Yong Il KIM
IPC: H01L33/38 , H01L33/62 , H01L25/075 , H01L33/52
Abstract: A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.
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公开(公告)号：US20190305202A1
公开(公告)日：2019-10-03
申请号：US16356283
申请日：2019-03-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tan SAKONG , Yong Il KIM , Han Kyu SEONG , Ji Hye YEON , Chung Sun LEE , Ji Hwan HWANG
IPC: H01L33/62 , H01L25/075 , H01L27/12 , H01L23/00
Abstract: A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.
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Patent Agency Ranking
公开(公告)号：US20170092820A1
公开(公告)日：2017-03-30
申请号：US15279864
申请日：2016-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Il KIM , Hyong Sik WON , Wan Tae LIM , Nam Goo CHA
CPC classification number: H01L33/50 , H01L25/0753 , H01L27/156 , H01L33/08 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/58
Abstract: A light emitting device package may include: a light emitting structure including a plurality of light emitting regions configured to emit light, respectively; a plurality of light adjusting layers formed above the light emitting regions to change characteristics of the light emitted from the light emitting regions, respectively; a plurality of electrodes configured to control the light emitting regions to emit the light, respectively; and an isolation insulating layer disposed between the light emitting regions to insulate the light emitting regions from one another, the isolation insulating layer forming a continuous structure with respect to the light emitting regions.
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公开(公告)号：US20140117392A1
公开(公告)日：2014-05-01
申请号：US13948797
申请日：2013-07-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Tae Hun KIM , Sung Joon KIM , Yong Il KIM , Yung Ho RYU , Myeong Rak SON , Su Yeol LEE , Seung Hwan LEE , Tae Sung JANG , Su Min HWANGBO
IPC: H01L33/60
CPC classification number: H01L33/007 , H01L33/0079
Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.
Abstract translation: 一种制造半导体发光器件的方法包括在半导体单晶生长衬底上形成隔离图案。 在由隔离图案限定的半导体单晶生长基板的一个芯片单元区域中依次生长第一导电型半导体层，有源层和第二导电型半导体层，并且形成反射金属层以覆盖 发光结构和隔离图案。 在反射金属层上形成支撑基板，从发光结构去除半导体单晶生长基板。 然后将支撑衬底切割成单个发光器件。
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18.发明申请公开(公告)号：US20200258939A1
公开(公告)日：2020-08-13
申请号：US16864954
申请日：2020-05-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Nam Goo CHA , Yong Il KIM , Young Soo PARK
Abstract: In some examples, a semiconductor device may comprise a semiconductor chip including a plurality of pixels, each pixel formed of a plurality of sub-pixels, such as a red sub-pixel, green sub-pixel and blue sub-pixel. Each sub-pixel may comprise a light emitting diode. A first signal line may connect to signal terminals of a first group sub-pixels (e.g., arranged in the same row), and a second signal line may connect to common terminals of a second group of sub-pixels (e.g., arranged in the same column). The number of chip pads may thus be reduced to provide increased design flexibility in location and/or allowing an increase in chip pad size. In some examples, a light transmissive material may be formed in openings of a semiconductor growth substrate on which light emitting cells of the sub-pixels were grown. The light transmissive material of some of the sub-pixels may comprise a wavelength conversion material and/or filter. Exemplary display panels and methods of manufacturing semiconductor devices and display panels are also disclosed.
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公开(公告)号：US20190103510A1
公开(公告)日：2019-04-04
申请号：US16190538
申请日：2018-11-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Yong Il KIM , Young Soo PARK , Sung Hyun SIM , Hanul YOO
IPC: H01L33/08 , H01L33/50 , H01L33/58 , H01L25/075 , H01L33/38 , G09G3/20 , G09G3/32 , H01L33/46 , H01L33/62
CPC classification number: H01L33/08 , G09G3/2003 , G09G3/32 , H01L25/0756 , H01L33/382 , H01L33/46 , H01L33/504 , H01L33/58 , H01L33/62 , H01L2224/16145
Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
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公开(公告)号：US20160351764A1
公开(公告)日：2016-12-01
申请号：US15163204
申请日：2016-05-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nam Goo CHA , Wan Tae LIM , Yong Il KIM , Hye Seok NOH , Eun Joo SHIN , Sung Hyun SIM , Hanul YOO
CPC classification number: H01L33/58 , F21K9/237 , F21K9/275 , F21S8/026 , F21V23/005 , F21Y2103/10 , F21Y2115/10 , H01L33/0079 , H01L33/44 , H01L33/505 , H01L2224/11
Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent support substrate.
Abstract translation: 半导体发光器件包括：发光结构，包括分别提供发光结构的彼此相对的第一表面和第二表面的第一导电类型半导体层和第二导电类型半导体层，以及 有源层插入在第一导电型半导体层和第二导电类型半导体层之间，第一导电型半导体层的区域朝向第二表面开口，第一表面具有设置在其上的凹凸部分; 分别设置在第一导电型半导体层的区域和第二导电型半导体层的区域上的第一电极和第二电极; 设置在所述发光结构的第一表面上的透明支撑基板; 以及设置在发光结构的第一表面和透明支撑基板之间的透明粘合剂层。
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