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    Liquid-based gravity-driven etching-stop technique for controlling structure dimension
    12.
    发明申请
    Liquid-based gravity-driven etching-stop technique for controlling structure dimension 有权
    液体重力驱动蚀刻停止技术，用于控制结构尺寸

    公开(公告)号：US20060264058A1

    公开(公告)日：2006-11-23

    申请号：US11242866

    申请日：2005-10-05

    Applicant: Wei-Chin Lin ,  Hui-Ling Chang ,  Ching-Hsiang Tsai ,  Chao-Chiun Liang ,  Gen-Wen Hsieh ,  Yuh-Wen Lee

    Inventor： Wei-Chin Lin ,  Hui-Ling Chang ,  Ching-Hsiang Tsai ,  Chao-Chiun Liang ,  Gen-Wen Hsieh ,  Yuh-Wen Lee

    IPC: H01L21/302

    CPC classification number: H01L21/02052 ,  B81B2201/12 ,  B81C1/00626 ,  B81C2201/0142 ,  G01Q60/38

    Abstract: A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.

    Abstract translation: 提供了一种用于控制结构尺寸的液体重力驱动蚀刻停止技术，其中与蚀刻停止溶液配合的相反蚀刻沟槽用于控制晶片级上的微结构的尺寸。 在一个实施例中，围绕微结构的相对的沟槽分别蚀刻在晶片的侧面上，并且在其上的晶片侧面上的沟槽深度等于微结构的设计尺寸。 相反，不需要在芯片的背面限定沟槽深度。 在制造过程的最后步骤中，当器件被蚀刻时，使得侧面上的沟槽彼此连通以自动地将微结构与全部晶片分离，从而从蚀刻剂移动到蚀刻停止溶液中以停止蚀刻 。

    Method of making superhard mechanical microstructures
    14.
    发明授权
    Method of making superhard mechanical microstructures 失效
    制造超硬机械微观结构的方法

    公开(公告)号：US5658710A

    公开(公告)日：1997-08-19

    申请号：US395410

    申请日：1995-02-24

    Applicant: Armand P. Neukermans

    Inventor： Armand P. Neukermans

    IPC: G01Q70/10 ,  B81C1/00 ,  C23C16/00 ,  G01Q70/14 ,  G01Q70/16 ,  H01J9/02 ,  H01J37/073 ,  C23C26/00

    CPC classification number: G01Q70/16 ,  B81C1/00682 ,  B82Y35/00 ,  G01Q70/14 ,  H01J9/025 ,  B81B2201/12 ,  H01J2209/0226

    Abstract: The forming of superhard, durable and inert mechanical microstructures, such as tips for atomic force microscopy and field emission, membranes, hinges, actuators, and sensors requires micromachining of silicon or polysilicon. The microstructures are then reacted with a hydrocarbon or ammonia gas, at a temperature in the range of 700.degree. C. to 1100.degree. C. and in partial vacuum conditions for several minutes. Gases such as methane, ethane, or acetylene will convert the surface layers to SiC, which is useful for its conductive properties, while ammonia gas will convert the surface layers to Si.sub.3 N.sub.4, which is useful for its insulative properties. Thus, the converted material will have improved physical, mechanical, chemical and electrical properties.

    Abstract translation: 超硬，耐用和惰性的机械微结构的形成，如原子力显微镜和场发射的尖端，膜，铰链，致动器和传感器需要硅或多晶硅的微加工。 然后将微结构与烃或氨气在700℃至1100℃的温度和部分真空条件下反应数分钟。 诸如甲烷，乙烷或乙炔的气体将将表面层转化为SiC，其可用于其导电性能，而氨气将表面层转化为Si3N4，其对其绝缘性质有用。 因此，转化的材料将具有改善的物理，机械，化学和电学性能。

    MICRO-NANO TOOLS WITH CHANGEABLE TIPS FOR MICRO-NANO MANIPULATION
    17.
    发明申请
    MICRO-NANO TOOLS WITH CHANGEABLE TIPS FOR MICRO-NANO MANIPULATION 审中-公开
    微纳米工具具有可变的提示，用于微纳米操作

    公开(公告)号：US20140284950A1

    公开(公告)日：2014-09-25

    申请号：US14123633

    申请日：2012-06-01

    Applicant: THE GOVERING COUNCIL OF THE UNIVERSITY OF TORONTO

    Inventor： Yu Sun ,  Ko Lun Chen

    IPC: B25J7/00 ,  B25J15/04

    CPC classification number: B25J7/00 ,  B25J15/04 ,  B25J15/0491 ,  B25J15/12 ,  B81B2201/12 ,  B81B2201/13 ,  B81C3/008 ,  H01J37/20 ,  H01J2237/206 ,  H01J2237/208

    Abstract: The present invention relates to modular system for micro-nano manipulation of samples. The modular system of the present invention comprises changeable tool tips which may be provided in an array, and a tool body. Each changeable tool tip comprises an end effector connected to a base having mating structures. The tool body includes an arm having slits having dimensions and being disposed on the arm so as to detachably couple with the mating structures of the tool tip. The slits may include an opening with rounded corners for receiving the mating structures, and tapered side walls for frictionally fitting the mating structures. The present invention relates also to a connection system for connecting a micro-dimensional tool body to a changeable micro-dimensional tool tip and to a manipulation tool for use with changeable tool tips of the present invention.

    Abstract translation: 本发明涉及用于微纳米操作样品的模块化系统。 本发明的模块化系统包括可以设置在阵列中的可变工具尖端和工具主体。 每个可变的工具尖端包括连接到具有配合结构的底座的端部执行器。 工具主体包括具有尺寸的狭缝的臂，并且布置在臂上，以便可拆卸地与工具尖端的配合结构联接。 狭缝可以包括具有用于接收配合结构的圆角的开口和用于摩擦地配合配合结构的锥形侧壁。 本发明还涉及一种用于将微尺寸工具主体连接到可更换的微尺寸工具尖端的连接系统以及与本发明的可变工具尖端一起使用的操作工具。

    Manufacturing of micro-objects such as miniature diamond tool tips
    18.
    发明授权
    Manufacturing of micro-objects such as miniature diamond tool tips 有权
    微型金刚石工具尖端的微型制造

    公开(公告)号：US07946020B2

    公开(公告)日：2011-05-24

    申请号：US11531541

    申请日：2006-09-13

    Applicant: Victor B. Kley

    Inventor： Victor B. Kley

    IPC: B23Q3/00 ,  A47J36/02

    CPC classification number: G01Q70/16 ,  B81B2201/12 ,  B81B2203/0361 ,  B81C3/008 ,  B81C99/002 ,  G01Q70/14 ,  Y10T29/49901

    Abstract: Techniques for affixing a micro-object to a mounting structure at a desired relative orientation. A shaped portion of a work piece is caused to become embedded in two or more reference structures at stages during fabrication. The micro-object may have dimensions less than 200 microns, and possibly on the order of 15-25 microns. The mounting structure may be formed with a blind recess or a through aperture in which the micro-object is mounted.

    Abstract translation: 用于将微物体以期望的相对定向固定到安装结构的技术。 工件的成形部分在制造过程中被分段成嵌入两个或更多个参考结构。 微型物体的尺寸可以小于200微米，并且可能在15-25微米左右。 安装结构可以形成有盲孔或安装微型物体的通孔。

    Forming a cantilever assembly for verticle and lateral movement
    19.
    发明申请
    Forming a cantilever assembly for verticle and lateral movement 有权
    形成用于垂直和横向运动的悬臂组件

    公开(公告)号：US20090001486A1

    公开(公告)日：2009-01-01

    申请号：US11824465

    申请日：2007-06-29

    Applicant: John Heck ,  Tsung-Kuan Allen Chou

    Inventor： John Heck ,  Tsung-Kuan Allen Chou

    IPC: H01L29/84 ,  H01L21/00

    CPC classification number: B81C1/00246 ,  B81B2201/07 ,  B81B2201/11 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C2203/0735 ,  B82Y10/00 ,  G11B9/1436

    Abstract: In one embodiment, the present invention includes a method for forming a sacrificial oxide layer on a base layer of a microelectromechanical systems (MEMS) probe, patterning the sacrificial oxide layer to provide a first trench pattern having a substantially rectangular form and a second trench pattern having a substantially rectangular portion and a lateral portion extending from the substantially rectangular portion, and depositing a conductive layer on the patterned sacrificial oxide layer to fill the first and second trench patterns to form a support structure for the MEMS probe and a cantilever portion of the MEMS probe. Other embodiments are described and claimed.

    Abstract translation: 在一个实施例中，本发明包括在微机电系统（MEMS）探针的基底层上形成牺牲氧化物层的方法，图案化牺牲氧化物层以提供具有基本矩形形状的第一沟槽图案和第二沟槽图案 具有基本上矩形的部分和从所述大致矩形部分延伸的横向部分，以及在所述图案化的牺牲氧化物层上沉积导电层以填充所述第一和第二沟槽图案以形成用于所述MEMS探针的支撑结构， MEMS探针。 描述和要求保护其他实施例。

    Method For Manufacturing A Membrane In A (111) Surface Of A (100) Silicon Wafer
    20.
    发明申请
    Method For Manufacturing A Membrane In A (111) Surface Of A (100) Silicon Wafer 审中-公开
    在（100）硅晶片的（111）表面中制造膜的方法

    公开(公告)号：US20080020579A1

    公开(公告)日：2008-01-24

    申请号：US10550384

    申请日：2004-03-22

    Applicant: Warner Jurrien Venstra

    Inventor： Warner Jurrien Venstra

    IPC: H01L21/311

    CPC classification number: B81C1/0015 ,  B81B2201/10 ,  B81B2201/12 ,  B81B2203/019 ,  B81C1/00158 ,  B81C2201/0132

    Abstract: The invention relates to a method for the fabrication of a membrane oriented in a (111) plane of a (100) silicon wafer. To this end the method comprises the following steps: applying a mask to both sides of the wafer, wherein portions of the sides are covered by the mask; and the at least partial removal by etching away silicon material from the portions of the two sides of the wafer that are not covered. This method is characterised in that the etching step substantially removes the silicon material forming recesses in the two surfaces of the wafer, such that the walls of the recesses are formed by (111) planes, and in that not covered portions at both sides of the wafer are aligned in relation to one another such that a (111) plane is formed and the distance d between said two planes is less than the thickness of the silicon wafer, so as to form a membrane in the (111) plane having a thickness d. Such a membrane has many application possibilities in the field of MEMS, for example by dividing the membrane into individual cantilevers.

    Abstract translation: 本发明涉及一种用于制造在（100）硅晶片的（111）面中取向的膜的方法。 为此，该方法包括以下步骤：将掩模施加到晶片的两侧，其中边的部分被掩模覆盖; 以及通过从未覆盖的晶片的两侧的部分蚀刻掉硅材料来进行至少部分去除。 该方法的特征在于，蚀刻步骤基本上去除晶片的两个表面中的形成硅材料的凹槽，使得凹部的壁由（111）面形成，并且在该两面的不覆盖部分 晶片相对于彼此对准，使得形成（111）面并且所述两个平面之间的距离d小于硅晶片的厚度，以便在（111）面中形成具有厚度的膜 d。 这种膜在MEMS领域具有许多应用可能性，例如通过将膜分成单独的悬臂。

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