公开(公告)号：US20140191387A1

公开(公告)日：2014-07-10

申请号：US14177146

申请日：2014-02-10

Applicant: STMicroelectronics Pte Ltd. ,  STMicroelectronics Grenoble 2 SAS

Inventor： Yonggang JIN ,  Romain COFFY ,  Jerome TEYSSEYRE

IPC: H01L23/498 ,  H01L23/34

CPC classification number: H01L23/498 ,  H01L21/561 ,  H01L21/76283 ,  H01L21/76802 ,  H01L21/76838 ,  H01L23/3114 ,  H01L23/34 ,  H01L23/36 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/181 ,  Y10T29/49124 ,  Y10T29/49174 ,  Y10T29/49204 ,  H01L2224/03 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A fan-out wafer level package is provided with a semiconductor die embedded in a reconstituted wafer. A redistribution layer is positioned over the semiconductor die, and includes a land grid array on a face of the package. A copper heat spreader is formed in the redistribution layer over the die in a same layer as a plurality of electrical traces configured to couple circuit pads of the semiconductor die to respective contact lands of the land grid array. In operation, the heat spreader improves efficiency of heat transfer from the die to the circuit board.

Abstract translation: 扇出晶片级封装设置有嵌入重构晶片中的半导体管芯。 再分配层位于半导体管芯上方，并且在封装的表面上包括焊盘栅格阵列。 铜管散热器形成在芯片上的再分配层中，与多个配置成将半导体管芯的电路焊盘耦合到焊盘栅极阵列的接触焊盘的多个电迹线相同的层中。 在操作中，散热器提高了从模具到电路板的热传递的效率。

公开(公告)号：US08766422B2

公开(公告)日：2014-07-01

申请号：US13098083

申请日：2011-04-29

Applicant: Kah Wee Gan ,  Yonggang Jin ,  Yun Liu ,  Yaohuang Huang

Inventor： Kah Wee Gan ,  Yonggang Jin ,  Yun Liu ,  Yaohuang Huang

IPC: H01L23/02 ,  H01L23/04

CPC classification number: H01L24/19 ,  H01L21/486 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76868 ,  H01L21/76873 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/20 ,  H01L24/24 ,  H01L24/82 ,  H01L24/96 ,  H01L25/105 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2225/1035 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/00013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00

Abstract: An embedded wafer level ball grid array (eWLB) is formed by embedding a semiconductor die in a molding compound. A trench is formed in the molding compound with a laser drill. A first layer of copper is deposited on the sidewall of the trench by physical vapor deposition. A second layer of copper is then formed on the first layer of copper by an electroless process. A third layer of copper is then formed on the second layer by electroplating.

Abstract translation: 嵌入式晶片级球栅阵列（eWLB）通过将半导体管芯嵌入到模塑料中而形成。 在激光钻头的模塑料中形成沟槽。 第一层铜通过物理气相沉积沉积在沟槽的侧壁上。 然后通过无电解方法在第一层铜上形成第二层铜层。 然后通过电镀在第二层上形成第三层铜层。

公开(公告)号：US20140061447A1

公开(公告)日：2014-03-06

申请号：US14017768

申请日：2013-09-04

Applicant: STMicroelectronics Pte Ltd ,  STMicroelectronics (Research & Development) Limited

Inventor： Colin Campbell ,  Laurent Herard

IPC: G01S17/02 ,  G01R3/00

CPC classification number: G01S17/026 ,  G01R3/00 ,  G01S7/4813 ,  Y10T29/49002

Abstract: A sensor package includes a radiation source and a radiation detector provided on a substrate. A cover member is mounted on or affixed to the substrate over the source and detector. The cover member includes an opaque housing, a first transparent portion provided over the source, a second transparent portion provided over the detector and a transparent insert within the housing and positioned at one of said transparent portions. An opaque protrusion is provided on the housing separating a region associate with the first transparent portion (and radiation source) from a region associated with the second transparent portion (and detector), the protrusion attached to a surface of the substrate.

Abstract translation: 传感器封装包括辐射源和设置在基板上的辐射检测器。 覆盖构件安装在基底上或固定到源和检测器上。 盖构件包括不透明壳体，设置在源极上的第一透明部分，设置在检测器上方的第二透明部分和位于壳体内并位于所述透明部分之一处的透明插入件。 在壳体上设置不透明突起，该区域与第二透明部分（和检测器）相关联的区域与第一透明部分（和辐射源）相关联的区域分离，所述突起附接到基板的表面。

公开(公告)号：US08664044B2

公开(公告)日：2014-03-04

申请号：US13287816

申请日：2011-11-02

Applicant: Yonggang Jin ,  Romain Coffy ,  Jerome Teysseyre

Inventor： Yonggang Jin ,  Romain Coffy ,  Jerome Teysseyre

IPC: H01L21/00 ,  H01L23/12

CPC classification number: H01L23/498 ,  H01L21/561 ,  H01L21/76283 ,  H01L21/76802 ,  H01L21/76838 ,  H01L23/3114 ,  H01L23/34 ,  H01L23/36 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/02331 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/181 ,  Y10T29/49124 ,  Y10T29/49174 ,  Y10T29/49204 ,  H01L2224/03 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A fan-out wafer level package is provided with a semiconductor die embedded in a reconstituted wafer. A redistribution layer is positioned over the semiconductor die, and includes a land grid array on a face of the package. A copper heat spreader is formed in the redistribution layer over the die in a same layer as a plurality of electrical traces configured to couple circuit pads of the semiconductor die to respective contact lands of the land grid array. In operation, the heat spreader improves efficiency of heat transfer from the die to the circuit board.

Abstract translation: 扇出晶片级封装设置有嵌入重构晶片中的半导体管芯。 再分配层位于半导体管芯上方，并且在封装的表面上包括焊盘栅格阵列。 铜管散热器形成在芯片上的再分配层中，与多个配置成将半导体管芯的电路焊盘耦合到焊盘栅极阵列的接触焊盘的多个电迹线相同的层中。 在操作中，散热器提高了从模具到电路板的热传递的效率。

公开(公告)号：US08650953B2

公开(公告)日：2014-02-18

申请号：US13285867

申请日：2011-10-31

Applicant: Suman Cherian ,  Olivier Le Neel

Inventor： Suman Cherian ,  Olivier Le Neel

IPC: G01N7/00

CPC classification number: G01N33/48785 ,  Y02B10/70 ,  Y10T436/143333 ,  Y10T436/144444 ,  Y10T436/172307 ,  Y10T436/184 ,  Y10T436/19 ,  Y10T436/204998 ,  Y10T436/205831

Abstract: A chemical sensor is provided on a first semiconductor die. A potentiostat is provided on a second semiconductor die. An analog to digital converter and a microcontroller are provided on a third semiconductor die. The first die is configured to be connected to the second die. The second die is configured to be connected to the third die. The chemical sensor detects a chemical in the surrounding environment and outputs a signal to the analog to digital converter. The analog to digital converter converts the signal to a digital signal and outputs the digital signal to the microcontroller. The microcontroller provides a measurement of the concentration of the chemical in the surrounding environment.

Abstract translation: 化学传感器设置在第一半导体管芯上。 在第二半导体管芯上提供恒电位仪。 在第三半导体管芯上提供模数转换器和微控制器。 第一管芯被配置为连接到第二管芯。 第二管芯被配置为连接到第三管芯。 化学传感器检测周围环境中的化学物质，并向模数转换器输出信号。 模数转换器将信号转换为数字信号，并将数字信号输出到微控制器。 微控制器提供化学品在周围环境中的浓度的测量。

公开(公告)号：US20140010962A1

公开(公告)日：2014-01-09

申请号：US13544865

申请日：2012-07-09

Applicant: Ying Yu ,  TienChoy Loh ,  ShianYeu Kam

Inventor： Ying Yu ,  TienChoy Loh ,  ShianYeu Kam

IPC: B05D3/00 ,  C03C17/32 ,  B05D3/10

CPC classification number: C03C17/32 ,  C03C15/00 ,  C03C2204/08 ,  G01N33/4875 ,  G01N2203/0091

Abstract: The present disclosure is directed to systems and methods for adjusting adhesion strength between materials during semiconductor sensor processing. One or more embodiments are directed to using various surface treatments to a substrate to adjust adhesion strength between the substrate and a polymer. In one embodiment, the surface of the substrate is roughened to decrease the adhesive strength between the substrate and the polymer. In another embodiment, the surface of the substrate is smoothed to increase the adhesive strength between the substrate and the polymer.

Abstract translation: 本发明涉及用于在半导体传感器处理期间调节材料之间的粘附强度的系统和方法。 一个或多个实施例涉及使用对基底的各种表面处理来调节基底和聚合物之间的粘合强度。 在一个实施方案中，基底的表面被粗糙化以降低基底和聚合物之间的粘合强度。 在另一个实施方案中，使基材的表面平滑以增加基材和聚合物之间的粘合强度。

公开(公告)号：US20130320471A1

公开(公告)日：2013-12-05

申请号：US13485624

申请日：2012-05-31

Applicant: Jing-En Luan

Inventor： Jing-En Luan

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L27/14625 ,  H01L27/14618 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A wafer-level camera sensor package includes a semiconductor substrate with an optical sensor on a front surface. Through-silicon-vias (TSV) extend through the substrate and provide I/O contact with the sensor from the back side of the substrate. A glass cover is positioned over the front surface, and the cover and substrate are embedded in a molding compound layer (MCL), the front surface of the MCL lying coplanar with the front of the cover, and the back surface lying coplanar with the back of the substrate. Surface-mount devices, electromagnetic shielding, and through-wafer-connectors can be embedded in the MCL. A redistribution layer on the back surface of the MCL includes bottom contact pads for mounting the package, and conductive traces interconnecting the contact pads, TSVs, surface-mount devices, shielding, and through-wafer-connectors. Anisotropic conductive adhesive is positioned on the front of the MCL for physically and electrically attaching a lens array.

Abstract translation: 晶片级摄像机传感器封装包括在前表面上具有光学传感器的半导体衬底。 穿透硅通孔（TSV）延伸穿过衬底，并从衬底的背面提供与传感器的I / O接触。 玻璃盖被定位在前表面上，并且盖和基板被嵌入在模塑复合层（MCL）中，MCL的前表面与盖的前部共面，并且后表面与背面共面 的基底。 表面贴装器件，电磁屏蔽和贯通晶圆连接器可嵌入MCL。 MCL背面的再分配层包括用于安装封装的底部接触焊盘，以及将接触焊盘，TSV，表面贴装器件，屏蔽和贯穿晶片连接器互连的导电迹线。 各向异性导电粘合剂位于MCL的前部，用于物理和电连接透镜阵列。

公开(公告)号：US08558654B2

公开(公告)日：2013-10-15

申请号：US13340255

申请日：2011-12-29

Applicant: Olivier Le Neel ,  Stefania Maria Serena Privitera ,  Pascale Dumont-Girard ,  MaurizoGabriele Castorina ,  Calvin Leung

Inventor： Olivier Le Neel ,  Stefania Maria Serena Privitera ,  Pascale Dumont-Girard ,  MaurizoGabriele Castorina ,  Calvin Leung

IPC: H01C7/10

CPC classification number: H01C17/265 ,  H01C17/0656 ,  H01L23/345 ,  H01L23/5228 ,  H01L24/05 ,  H01L27/016 ,  H01L27/0688 ,  H01L28/20 ,  H01L2224/02166 ,  H01L2924/01019 ,  H01L2924/1301 ,  H01L2924/13033 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/00

Abstract: A process is described for integrating two closely spaced thin films without deposition of the films through deep vias. The films may be integrated on a wafer and patterned to form a microscale heat-trimmable resistor. A thin-film heating element may be formed proximal to a thin-film resistive element, and heat generated by the thin-film heater can be used to permanently trim a resistance value of the thin-film resistive element. Deposition of the thin films over steep or abrupt topography is minimized by using a process in which the thin films are deposited in a sequence that falls between depositions of thick metal contacts to the thin films.

Abstract translation: 描述了一种用于集成两个紧密间隔的薄膜而不通过深通孔沉积膜的方法。 膜可以集成在晶片上并被图案化以形成微量热可调节电阻器。 可以在薄膜电阻元件的近侧形成薄膜加热元件，并且可以使用由薄膜加热器产生的热量来永久地修整薄膜电阻元件的电阻值。 通过使用其中薄膜以厚的金属接触沉积到薄膜之间的顺序沉积的方法，使得在陡峭或突然形貌上的薄膜沉积最小化。

公开(公告)号：US08502556B2

公开(公告)日：2013-08-06

申请号：US13341317

申请日：2011-12-30

Applicant: Yann Desprez-Le-Goarant ,  Jingfeng Gong

Inventor： Yann Desprez-Le-Goarant ,  Jingfeng Gong

IPC: H03K17/16 ,  H03K19/003

CPC classification number: H03K19/00361 ,  G06F3/0416 ,  H03K19/00392

Abstract: A circuit includes a plurality of logic gates and a drive circuit. The plurality of logic gates are coupled between a first supply node and a second supply node. Each logic gate has at least one input and consumes a short circuit current during a logic state transition. The drive circuit is coupled to the inputs of the plurality of logic gates to deliver a copy of an input signal to each logic gate, wherein the input signal copies arrive at the inputs of the logic gates at substantially different times. The circuit may be incorporated in a touch screen panel and a display.

Abstract translation: 电路包括多个逻辑门和驱动电路。 多个逻辑门耦合在第一供应节点和第二供应节点之间。 每个逻辑门具有至少一个输入，并在逻辑状态转换期间消耗短路电流。 驱动电路耦合到多个逻辑门的输入，以将输入信号的副本传送到每个逻辑门，其中输入信号复制在基本上不同的时间到达逻辑门的输入端。 电路可以结合在触摸屏面板和显示器中。

公开(公告)号：US08497587B2

公开(公告)日：2013-07-30

申请号：US12650360

申请日：2009-12-30

Applicant: Yiyi Ma

Inventor： Yiyi Ma

IPC: H01L23/28 ,  H01L23/34 ,  H01L23/10

CPC classification number: H01L23/3128 ,  H01L21/568 ,  H01L23/4334 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2224/97 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2224/82

Abstract: A thermally enhanced expanded wafer level ball grid array package. The expanded wafer level ball grid array package includes an integrated thermally conductive heat dissipater. In one embodiment the heat dissipater is positioned in close proximity to a non-active face of a die and is separated from the non-active face by a thermal interface material. In another embodiment the heat dissipater includes legs that displace the heat dissipater a short distance from the non-active die face, with the intervening space occupied by encapsulation material. In yet another embodiment, the thermal interface material exists between the non-active die face and the heat dissipater, but extends beyond the edge of the semiconductor die to also cover a portion of the encapsulation material. Methods for making the various embodiments of the expanded wafer level ball grid array package are also shown.

Abstract translation: 一种热增强扩展晶圆级球栅阵列封装。 扩展的晶圆级球栅阵列封装包括集成的导热散热器。 在一个实施例中，散热器定位成紧邻模具的非活性面，并且通过热界面材料与非活性面分离。 在另一个实施例中，散热器包括将散热器从非活性裸片表面移开一短距离的支脚，并且封装材料占据中间空间。 在另一个实施例中，热界面材料存在于非活性模头表面和散热器之间，但是延伸超过半导体管芯的边缘以覆盖封装材料的一部分。 还示出了制造扩展晶片级球栅阵列封装的各种实施例的方法。