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    Microelectronic assemblies
    272.
    发明授权
    Microelectronic assemblies 有权

    公开(公告)号：US12288751B2

    公开(公告)日：2025-04-29

    申请号：US18451156

    申请日：2023-08-17

    Applicant: Intel Corporation

    Inventor： Aleksandar Aleksov ,  Johanna M. Swan

    IPC: H01L23/538 ,  H01L23/00 ,  H01L23/13 ,  H01L23/367 ,  H01L23/498 ,  H01L25/065 ,  H01L25/16

    Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate including a dielectric material having a first surface and an opposing second surface, a first material on at least a portion of the second surface, and a second material on at least a portion of the first material, wherein the second material has a different material composition than the first material.

    Multi-chip package with high density interconnects
    273.
    发明授权
    Multi-chip package with high density interconnects 有权

    公开(公告)号：US12218069B2

    公开(公告)日：2025-02-04

    申请号：US18091781

    申请日：2022-12-30

    Applicant: Intel Corporation

    Inventor： Aleksandar Aleksov ,  Adel A. Elsherbini ,  Kristof Darmawikarta ,  Robert A. May ,  Sri Ranga Sai Boyapati

    IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18 ,  H01L21/56

    Abstract: An apparatus is provided which comprises: a plurality of first conductive contacts having a first pitch spacing on a substrate surface, a plurality of second conductive contacts having a second pitch spacing on the substrate surface, and a plurality of conductive interconnects disposed within the substrate to couple a first grouping of the plurality of second conductive contacts associated with a first die site with a first grouping of the plurality of second conductive contacts associated with a second die site and to couple a second grouping of the plurality of second conductive contacts associated with the first die site with a second grouping of the plurality of second conductive contacts associated with the second die site, wherein the conductive interconnects to couple the first groupings are present in a layer of the substrate above the conductive interconnects to couple the second groupings. Other embodiments are also disclosed and claimed.

    Integrated circuit package supports
    276.
    发明授权
    Integrated circuit package supports 有权

    公开(公告)号：US12176223B2

    公开(公告)日：2024-12-24

    申请号：US18502244

    申请日：2023-11-06

    Applicant: Intel Corporation

    Inventor： Kristof Kuwawi Darmawikarta ,  Robert May ,  Sri Ranga Sai Boyapati ,  Srinivas V. Pietambaram ,  Chung Kwang Christopher Tan ,  Aleksandar Aleksov

    IPC: H01L21/48 ,  H01L23/498

    Abstract: Disclosed herein are integrated circuit (IC) package supports and related apparatuses and methods. For example, in some embodiments, a method for forming an IC package support may include forming a first dielectric material having a surface; forming a first conductive via in the first dielectric material, wherein the first conductive via has tapered sidewalls with an angle that is equal to or less than 80 degrees relative to the surface of the first dielectric material; forming a second dielectric material, having a surface, on the first dielectric material; and forming a second conductive via in the second dielectric material, wherein the second conductive via is electrically coupled to the first conductive via, has tapered sidewalls with an angle that is greater than 80 degrees relative to the surface of the second dielectric material, and a maximum diameter between 2 microns and 20 microns.

    Direct bonding in microelectronic assemblies
    279.
    发明授权
    Direct bonding in microelectronic assemblies 有权

    公开(公告)号：US11990448B2

    公开(公告)日：2024-05-21

    申请号：US17025709

    申请日：2020-09-18

    Applicant: Intel Corporation

    Inventor： Feras Eid ,  Adel A. Elsherbini ,  Aleksandar Aleksov ,  Shawna M. Liff ,  Johanna M. Swan

    IPC: H01L25/065 ,  H01L23/00

    CPC classification number: H01L25/0655 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/17 ,  H01L24/29 ,  H01L24/30 ,  H01L25/0652 ,  H01L2224/08225 ,  H01L2224/09177 ,  H01L2224/81

    Abstract: Disclosed herein are microelectronic assemblies including direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first subregion and a second subregion, and the first subregion has a greater metal density than the second subregion. In some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first metal contact and a second metal contact, the first metal contact has a larger area than the second metal contact, and the first metal contact is electrically coupled to a power/ground plane of the first microelectronic component.

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