摘要:
A semiconductor package without a chip carrier formed thereon and a fabrication method thereof. A metallic carrier is half-etched to form a plurality of grooves and metal studs corresponding to the grooves. The grooves are filled with a first encapsulant and a plurality of bonding pads are formed on the metal studs. The first encapsulant is bonded with the metal studs directly. Each of the bonding pads and one of the metal studs corresponding to the bonding pad form a T-shaped structure. Therefore, bonding force between the metal studs and the first encapsulant is enhanced such that delamination is avoided. Die mounting, wire-bonding and molding processes are performed subsequently. Since the half-etched grooves are filled with the first encapsulant, the drawback of having pliable metallic carrier that makes transportation difficult to carry out as encountered in prior techniques is overcome, and the manufacturing cost is educed by not requiring the use of costly metals as an etching resist layer.
摘要:
A chip-sized package and a fabrication method thereof are provided. The method includes forming a protection layer on an active surface of a chip and attaching a non-active surface of the chip to a carrier made of a hard material; performing a molding process and removing a protection layer from the chip; performing an RDL process to prevent problems as encountered in the prior art, such as softening of adhesive films, an encapsulant overflow, a pliable chip and chip deviation or contamination caused by directly adhering the active surface of the chip to the adhesive film that may even lead to inferior electrical contacts between a circuit layer and a plurality of chip bond pads during subsequent RDL process, and cause the package to be scraped. Further, the carrier employed in this invention can be repetitively used in the process to help reduce manufacturing costs.
摘要:
A semiconductor device having conductive bumps and a fabrication method thereof is proposed. The fabrication method includes the steps of forming a first metallic layer on a substrate having solder pads and a passivation layer formed thereon, and electrically connecting it to the solder pads; applying a second covering layer over exposed parts of the first metallic layer; subsequently, forming a second metallic layer on the second covering layer, and electrically connecting it to the exposed parts of the first metallic layer; applying a third covering layer, and forming openings for exposing parts of the second metallic layer to form thereon a conductive bump having a metallic standoff and a solder material. The covering layers and the metallic layers can provide a buffering effect for effectively absorbing the thermal stress imposed on the conductive bumps to prevent delamination caused by the UBM layers.
摘要:
A semiconductor device having conductive bumps and a fabrication method thereof are provided. The fabrication method mainly including steps of: providing a semiconductor substrate having a solder pad and a passivation layer formed thereon with a portion of the solder pads exposed from the passivation layer; disposing a first metal layer on the solder pad and a portion of the passivation layer around the solder pad; disposing a covering layer on the first metal layer and the passivation layer, and forming an aperture in the covering layer to expose a portion of the first metal layer, wherein a center of the aperture is deviated from that of the solder pad; deposing a metal pillar on the portion of the first metal layer; and deposing a solder material on an outer surface of the metal pillar for providing a better buffering effect.
摘要:
This invention provides a semiconductor package and a method for fabricating the same. The method includes: forming a first resist layer on a metal carrier; forming a plurality of openings penetrating the first resist layer; forming a conductive metal layer in the openings; removing the first resist layer; covering the metal carrier having the conductive metal layer with a dielectric layer; forming blind vias in the dielectric layer to expose a portion of the conductive metal layer; forming conductive circuit on the dielectric layer and conductive posts in the blind vias, such that the conductive circuit is electrically connected to the conductive metal layer via the conductive posts; electrically connecting at least one chip to the conductive circuit; forming an encapsulant for encapsulating the chip and the conductive circuit; and removing the metal carrier, thereby allowing a semiconductor package to be formed without a chip carrier. Given the conductive posts, both the conductive circuit and conductive metal layer are efficiently coupled to the dielectric layer to prevent delamination. Further, downsizing the blind vias facilitates the fabrication process and cuts the fabrication cost.
摘要:
A semiconductor device and a fabrication method thereof are provided. A semiconductor substrate having a plurality of bonding pads is prepared, and a first passivation layer, a second passivation layer and a metallic layer are successively formed on the semiconductor substrate. A third passivation layer is further applied on the semiconductor substrate and has a plurality of openings for exposing a portion of the metallic layer, wherein each of the openings is shifted in position from a corresponding one of the bonding pads by a distance not exceeding a radius of the bonding pad. A plurality of solder bumps are bonded to the exposed portion of the metallic layer and have a larger contact area with the third passivation layer. This provides better buffer to reduce stress exerted on the solder bumps, thereby preventing problems of cracking and delamination as in the prior art.
摘要:
A semiconductor element with conductive bumps and a fabrication method thereof are provided. The fabrication method includes providing a semiconductor element having a plurality of bond pads formed on an active surface thereof, wherein each of the bond pads has a predetermined bonding area; applying a passivation layer on the active surface, with a plurality of openings formed for exposing the predetermined bonding areas; applying a buffer layer on the passivation layer to cover the predetermined bonding areas; allowing the buffer layer with a plurality of openings to be formed for exposing a portion of the predetermined bonding areas; forming a under bump metallurgy (UBM) layer on the bond pads, allowing the predetermined bonding areas to be completely covered by the UBM layer; and implanting conductive bumps on the UBM layer. The buffer layer advantageously absorbs stresses exerted to the conductive bumps, thereby preventing the conducting bumps from cracking.
摘要:
A fabrication method of under bump metallurgy (UBM) structure is provided. A blocking layer is applied over a surface of a semiconductor element formed with at least one bond pad and a passivation layer thereon. The passivation layer covers the semiconductor element and exposes the bond pad, and the blocking layer covers the bond pad and the passivation layer. The blocking layer is formed with at least one opening at a position corresponding to the bond pad. Metallic layers are formed on a surface of the blocking layer and at the opening. The metallic layers are patterned to form a UBM structure at the opening corresponding to the bond pad. Then the blocking layer is removed. The blocking layer can separate the metallic layers for forming the UBM structure from the passivation layer to prevent metallic residues of the UBM structure from being left on the passivation layer.
摘要:
A semiconductor package and a method for fabricating the same are proposed, in which a lead frame is modified to form protrusions at sides of middle portions of leads to reduce spacing between the adjacent middle portions. This allows resin flow to slow down in speed during molding and reduces area available for resin flashes occurring thereon, so as to effectively eliminate the occurrence of resin flashes on the leads. Moreover, tapes can be adhered onto the lead frame for covering spacing between adjacent leads of the lead frame; this further helps prevent resin flashes from occurrence. In such an environment free of resin flashes, die-bonding and wire-bonding processes can be proceeded smoothly with assurance of quality and reliability of fabricated semiconductor packages.
摘要:
Proposed is a package structure having a micro-electromechanical (MEMS) element, including a chip having a plurality of electrical connecting pads and a MEMS element formed thereon; a lid disposed on the chip for covering the MEMS element; a stud bump disposed on each of the electrical connecting pads; an encapsulant formed on the chip with part of the stud bumps being exposed from the encapsulant; and a metal conductive layer formed on the encapsulant and connected to the stud bumps. The invention is characterized by completing the packaging process on the wafer directly to enable thinner and cheaper package structures to be fabricated within less time. This invention further provides a method for fabricating the package structure as described above.