公开(公告)号：US20140179100A1

公开(公告)日：2014-06-26

申请号：US13726972

申请日：2012-12-26

Applicant: INTERMOLECULAR, INC.

Inventor： Sandip Niyogi ,  Amol Joshi ,  Chi-I Lang ,  Salil Mujumdar

IPC: H01L21/02 ,  H01L21/768

CPC classification number: H01L21/76886 ,  C23C14/5826 ,  C23C16/45536 ,  H01J37/32357 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02323 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/3215 ,  H01L21/67207 ,  H01L21/68764 ,  H01L21/68792 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653

Abstract: Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The remote plasma source may be used to provide a plasma surface treatment or as a source to incorporate dopants into a pre-deposited layer.

Abstract translation: 公开了使用远程等离子体源的处理方法和装置。 该装置包括封闭衬底支撑件，远程等离子体源和喷头的外室。 基板加热器可以安装在基板支撑件中。 运输系统移动基板支撑件并且能够定位基板。 远程等离子体源可用于提供等离子体表面处理或作为将掺杂剂掺入预沉积层的源。

公开(公告)号：US08647894B2

公开(公告)日：2014-02-11

申请号：US13726834

申请日：2012-12-26

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow

IPC: G01R31/26 ,  H01L21/20

CPC classification number: H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/185 ,  C23C14/5806 ,  H01L21/02422 ,  H01L21/02672 ,  H01L21/32051 ,  H01L21/76823 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500° C., where the annealing converts the non-conducting amorphous carbon disposed under the transition metal to conducting amorphous carbon. A portion of the pattern of the transition metal is removed from the surface of the substrate to expose the conducting amorphous carbon.

Abstract translation: 提供了一种沉积石墨烯的方法。 该方法包括在衬底的表面上沉积非导电无定形碳层并且以无定型碳上的图案沉积过渡金属。 将衬底在低于500℃的温度下退火，其中退火将设置在过渡金属下面的非导电非晶碳转化成导电无定形碳。 过渡金属的图案的一部分从衬底的表面去除以暴露导电无定形碳。

公开(公告)号：US09099488B2

公开(公告)日：2015-08-04

申请号：US14134291

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Dipankar Pramanik

IPC: H01L29/66 ,  H01L21/66

CPC classification number: H01L29/66181 ,  G01N27/002 ,  H01L22/14 ,  H01L22/20

Abstract: Metal gate high-k capacitor structures with lithography patterning are used to extract gate work function using a combinatorial workflow. Oxide terracing, together with high productivity combinatorial process flow for metal deposition can provide optimum high-k gate dielectric and metal gate solutions for high performance logic transistors. Surface treatments can be inserted at three possible steps during the formation of the MOSCAP structures. The high productivity combinatorial technique can provide an evaluation of effective work function for given high-k dielectric metal gate stacks for PMOS and NMOS transistors, which is critical in identifying and selecting the right materials.

Abstract translation: 使用光刻图案化的金属栅极高k电容器结构使用组合工作流程提取门功函数。 氧化物梯田，以及用于金属沉积的高生产率组合工艺流程可为高性能逻辑晶体管提供最佳的高k栅介质和金属栅极解决方案。 在形成MOSCAP结构期间，可以以三个可能的步骤插入表面处理。 高生产率组合技术可以为PMOS和NMOS晶体管的给定高k介质金属栅极叠层提供有效的工作函数的评估，这对于识别和选择正确的材料至关重要。

公开(公告)号：US20150021772A1

公开(公告)日：2015-01-22

申请号：US13943418

申请日：2013-07-16

Applicant: Intermolecular Inc.

Inventor： Edwin Adhiprakasha ,  Sandip Niyogi ,  Karthik Ramani ,  Vivian Ryan

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/2855 ,  C23C14/165 ,  C23C14/3492 ,  C23C14/352 ,  C23C14/5806 ,  H01J37/3408 ,  H01J37/3429 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A barrier film including at least one ferromagnetic metal (e.g., nickel) and at least one refractory metal (e.g., tantalum) effectively blocks copper diffusion and facilitates uniform contiguous (non-agglomerating) deposition of copper layers less than 100 Å thick. Methods of forming the metal barrier include co-sputtering the component metals from separate targets. Using high-productivity combinatorial (HPC) apparatus and methods, the proportions of the component metals can be optimized. Gradient compositions can be deposited by varying the plasma power or throw distance of the separate targets.

Abstract translation: 包括至少一种铁磁金属（例如镍）和至少一种难熔金属（例如钽）的阻挡膜有效地阻止铜扩散并促进小于100埃的铜层的均匀连续（非聚集）沉积。 形成金属屏障的方法包括从分离的靶共溅射组分金属。 使用高生产率组合（HPC）设备和方法，可以优化组分金属的比例。 可以通过改变分离靶的等离子体功率或投射距离来沉积梯度组合物。

公开(公告)号：US20140273309A1

公开(公告)日：2014-09-18

申请号：US14051287

申请日：2013-10-10

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Jay Dedontney ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Martin Romero ,  Sunil Shanker ,  James Tsung ,  J. Watanabe

IPC: H01L21/66 ,  H01L21/02

CPC classification number: H01L21/30 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00286 ,  B01J2219/00301 ,  B01J2219/00313 ,  B01J2219/0038 ,  B01J2219/00382 ,  B01J2219/00416 ,  B01J2219/00418 ,  B01J2219/00527 ,  B01J2219/00585 ,  B08B3/04 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C18/1619 ,  C23C18/1682 ,  C25D17/02 ,  G11C13/0004 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L22/10 ,  H01L22/12 ,  H01L22/14 ,  H01L27/2463 ,  H01L45/1608

Abstract: Remote-plasma treatments of surfaces, for example in semiconductor manufacture, can be improved by preferentially exposing the surface to only a selected subset of the plasma species generated by the plasma source. The probability that a selected species reaches the surface, or that an unselected species is quenched or otherwise converted or diverted before reaching the surface, can be manipulated by introducing additional gases with selected properties either at the plasma source or in the process chamber, varying chamber pressure or flow rate to increase or decrease collisions, or changing the dimensions or geometry of the injection ports, conduits and other passages traversed by the species. Some example processes treat surfaces preferentially with relatively low-energy radicals, vary the concentration of radicals at the surface in real time, or clean and passivate in the same unit process.

Abstract translation: 可以通过优选地将表面暴露于由等离子体源产生的等离子体物质的选定子集中来改善表面的远程等离子体处理，例如在半导体制造中。 所选择的物种到达表面的可能性，或未被选择的物质在到达表面之前被淬灭或以其他方式转化或转移的可能性可以通过在等离子体源或处理室，变化室中引入具有选定性质的附加气体来操纵 压力或流量以增加或减少碰撞，或改变注射口，管道和由物种穿过的其它通道的尺寸或几何形状。 一些示例性过程优先用相对低能量的基团处理表面，实时地改变表面处的自由基的浓度，或者在相同的单元过程中清洁和钝化。

公开(公告)号：US20140264281A1

公开(公告)日：2014-09-18

申请号：US14137183

申请日：2013-12-20

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Dipankar Pramanik ,  J. Watanabe

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Semiconductor devices and methods of making thereof are disclosed. A field effect transistor (FET) is provided comprising a substrate, a first layer disposed above the substrate, the first layer being operable as a gate electrode, a second layer disposed above the first layer, the second layer comprising a dielectric material, a third layer disposed above the second layer, the third layer comprising a semiconductor, and a fourth layer comprising one or more conductive materials and operable as source and drain electrodes disposed above the third layer. In some embodiments, the dielectric material comprises a high-κ dielectric. In some embodiments, the source and drain electrodes comprise one or more metals. The source and drain electrodes are each in ohmic contact with an area of the top surface of the third layer, and substantially all of the current through the transistor flows through the ohmic contacts.

Abstract translation: 公开了半导体器件及其制造方法。 提供场效应晶体管（FET），其包括基板，设置在基板上方的第一层，第一层可操作为栅电极，第二层设置在第一层上方，第二层包括电介质材料，第三层 层，其设置在所述第二层上方，所述第三层包括半导体，以及包括一个或多个导电材料并可操作为设置在所述第三层上方的源极和漏极的第四层。 在一些实施例中，电介质材料包括高压 电介质。 在一些实施例中，源电极和漏电极包括一种或多种金属。 源电极和漏电极各自与第三层的顶表面的区域欧姆接触，并且基本上所有通过晶体管的电流都流经欧姆接触。

公开(公告)号：US20140252565A1

公开(公告)日：2014-09-11

申请号：US14198480

申请日：2014-03-05

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Edwin Adhiprakasha ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Sandip Niyogi ,  Kurt Pang ,  J. Watanabe

IPC: H01L21/311 ,  H01L29/02

CPC classification number: H01L21/31122 ,  H01L21/02052 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28255 ,  H01L29/02

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract translation: 制备含锗的半导体表面，用于通过（1）去除天然氧化物，例如通过湿法清洁来形成电介质覆盖层（例如，高k栅极电介质的薄层），（2）用氢物质进行额外的清洁 ，（3）原位形成受控单层的GeO 2，以及（4）电介质覆层的原位沉积，以防止天然氧化物的不受控制的再生长。 GeO2的单层促进电介质覆盖层的均匀成核，但它太薄而不能明显影响电介质覆盖层的有效氧化物厚度。

公开(公告)号：US20140134849A1

公开(公告)日：2014-05-15

申请号：US13672840

申请日：2012-11-09

Applicant: INTERMOLECULAR INC.

Inventor： Sandip Niyogi ,  Owen Ho Yin Fong ,  Sunil Shanker ,  ShouQian Shao ,  Jingang Su ,  J. Watanabe ,  Wenxian Zhu

IPC: C23C16/458 ,  H01L21/02

CPC classification number: C23C16/04 ,  C23C16/4584

Abstract: An apparatus that includes a base, a sidewall extending from the base, and a lid disposed over a top of the sidewall is provided. A plasma generating source extends through a surface of the lid. A rotatable substrate support is disposed within the chamber above a surface of the base, the rotatable substrate support operable to vertically translate from the base to the lid. A first fluid inlet extends into a first surface of the sidewall and a second fluid inlet extends into a second surface of the sidewall. The plasma generating source provides a plasma activated species to a region of a surface of a substrate supported on the rotatable substrate support and a fluid delivered proximate to the region from one of the first or the second fluid inlet interacts with the plasma activated species to deposit a layer of material over the region.

Abstract translation: 提供一种装置，其包括基座，从基座延伸的侧壁和设置在侧壁顶部上的盖。 等离子体产生源延伸穿过盖的表面。 可旋转的基板支撑件设置在基座的表面之上的腔室内，可旋转的基底支撑件可操作以从基座垂直平移到盖子。 第一流体入口延伸到侧壁的第一表面中，并且第二流体入口延伸到侧壁的第二表面中。 等离子体产生源将等离子体激活的物质提供到支撑在可旋转基底支撑件上的基底的表面的区域，并且靠近该区域的流体从第一或第二流体入口中的一个流体与等离子体活化物质相互作用而沉积 在该地区的一层材料。

公开(公告)号：US20140106561A1

公开(公告)日：2014-04-17

申请号：US14134219

申请日：2013-12-19

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Chi-I Lang

IPC: H01L21/768

CPC classification number: H01L21/76846 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/185 ,  C23C14/5806 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02527 ,  H01L21/02672 ,  H01L21/32051 ,  H01L21/76823 ,  H01L21/76855 ,  H01L21/76867 ,  H01L21/76871 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments described herein provide interconnect barrier layers and methods for forming such barriers. A dielectric body having a trench formed in a surface thereof is provided. A first layer is formed above the dielectric body within the trench. The first layer includes amorphous carbon. A second layer is formed above the first layer. The second layer includes a metal. The dielectric body, the first layer, and the second layer are heated to convert at least some of the amorphous carbon to graphene.

Abstract translation: 本文所述的实施例提供了用于形成这种屏障的互连阻挡层和方法 提供具有形成在其表面中的沟槽的电介质体。 第一层形成在沟槽内的绝缘体的上方。 第一层包括无定形碳。 在第一层上方形成第二层。 第二层包括金属。 电介质体，第一层和第二层被加热以将至少一些无定形碳转化为石墨烯。

公开(公告)号：US20130323863A1

公开(公告)日：2013-12-05

申请号：US13726834

申请日：2012-12-26

Applicant: Intermolecular, Inc.

Inventor： Sandip Niyogi ,  Sean Barstow

IPC: H01L21/02

CPC classification number: H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C23C14/042 ,  C23C14/0605 ,  C23C14/185 ,  C23C14/5806 ,  H01L21/02422 ,  H01L21/02672 ,  H01L21/32051 ,  H01L21/76823 ,  H01L23/53276 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500° C., where the annealing converts the non-conducting amorphous carbon disposed under the transition metal to conducting amorphous carbon. A portion of the pattern of the transition metal is removed from the surface of the substrate to expose the conducting amorphous carbon.

Abstract translation: 提供了一种沉积石墨烯的方法。 该方法包括在衬底的表面上沉积非导电无定形碳层并且以无定型碳上的图案沉积过渡金属。 将衬底在低于500℃的温度下退火，其中退火将设置在过渡金属下面的非导电非晶碳转化成导电无定形碳。 过渡金属的图案的一部分从衬底的表面去除以暴露导电无定形碳。