利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

79 条记录 (耗时 0.032 秒)

    SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD
    22.
    发明申请
    SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD 有权
    半导体制造设备和半导体制造方法

    公开(公告)号：US20120329241A1

    公开(公告)日：2012-12-27

    申请号：US13422966

    申请日：2012-03-16

    申请人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

    发明人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

    IPC分类号： B32B37/10 ,  B32B38/18 ,  H01L21/762

    CPC分类号： H01L21/76251 ,  H01L21/67092 ,  Y10T156/1744

    摘要： According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

    摘要翻译： 根据一个实施例，提供一种半导体制造装置。 半导体制造装置包括台，基板支撑件，第一和第二推动器以及控制器。 该台被配置为从下方支撑第一半导体衬底的外围部分。 衬底支撑件构造成保持第二半导体衬底的背面。 第一和第二推动器构造成使第一和第二半导体衬底接触。 控制器被配置为在第一和第二半导体衬底之间形成接合起始点。

    Semiconductor device and manufacturing method of the same
    25.
    发明申请
    Semiconductor device and manufacturing method of the same 有权
    半导体器件及其制造方法相同

    公开(公告)号：US20060131741A1

    公开(公告)日：2006-06-22

    申请号：US11353192

    申请日：2006-02-14

    申请人： Mitsuo Umemoto ,  Kazumasa Tanida

    发明人： Mitsuo Umemoto ,  Kazumasa Tanida

    IPC分类号： H01L23/34

    CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06582 ,  H01L2924/01004 ,  H01L2924/01078

    摘要： The invention realizes excellent electrical and mechanical connection between electrodes in a packaging structure where a plurality of semiconductor chips having electrodes are connected with each other through the low-melting metallic members. Bump electrodes are formed on a front surface of a first semiconductor chip. Penetrating holes are formed in a second semiconductor chip, and a penetrating electrode having a gap in a center is formed in each of the penetrating holes. Low-melting metallic members are interposed between connecting surfaces of the bump electrodes and the penetrating electrodes, and a part of each of the low-melting metallic members flows in each of the gaps of the penetrating electrodes when dissolved. This prevents short-circuiting between the bump electrodes which is caused by oversupplying the low-melting metallic members between the adjacent bump electrodes.

    摘要翻译： 本发明实现了具有电极的多个半导体芯片通过低熔点金属部件彼此连接的封装结构中的电极之间的优异的电气和机械连接。 凸起电极形成在第一半导体芯片的前表面上。 穿透孔形成在第二半导体芯片中，并且在每个穿透孔中形成有在中心具有间隙的穿透电极。 低熔点金属构件插入在凸块电极和穿透电极的连接面之间，并且每个低熔点金属构件的一部分在溶解时在贯通电极的每个间隙中流动。 这防止了在相邻的凸起电极之间的低熔点金属构件供应过大引起的突起电极之间的短路。

    SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    29.
    发明申请
    SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
    用于制造半导体器件的系统和方法

    公开(公告)号：US20130183810A1

    公开(公告)日：2013-07-18

    申请号：US13479968

    申请日：2012-05-24

    申请人： Satoshi HONGO ,  Kenji Takahashi ,  Kazumasa Tanida

    发明人： Satoshi HONGO ,  Kenji Takahashi ,  Kazumasa Tanida

    IPC分类号： H01L21/762 ,  H01L21/00

    CPC分类号： H01L21/2007 ,  H01L21/67092 ,  H01L21/76251 ,  Y10T29/413

    摘要： According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.

    摘要翻译： 根据一个实施例，一种用于制造半导体器件的系统包括自发接合单元和变形接合单元。 自发接合单元与第一基板和第二基板重叠，并且自发地接合第一基板和第二基板的各个接合面的相互中心部分。 变形接合单元使由第一基板和第二基板的各个接合面的至少一个周边部分朝向另一个周边部分变形，并且连接各个接合面的相互的周边部分。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    30.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的半导体器件和制造方法

    公开(公告)号：US20120217600A1

    公开(公告)日：2012-08-30

    申请号：US13368930

    申请日：2012-02-08

    申请人： Satoshi HONGO ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

    发明人： Satoshi HONGO ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L27/1464 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1469

    摘要： A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

    摘要翻译： 根据实施例的半导体器件的制造方法包括在第一衬底的主表面上形成作为包括光电二极管的有源区的光电二极管层，形成布线层，其包括线和覆盖线的介电层 在光电二极管层上，并在布线层上形成电介质膜。 根据实施例的半导体器件的制造方法还包括将第二衬底接合到第一衬底的电介质膜，使得光电二极管层的晶体取向与第二衬底的晶体取向相匹配。