公开(公告)号：US20140360567A1

公开(公告)日：2014-12-11

申请号：US13853031

申请日：2013-03-28

Applicant: Solexel, Inc.

Inventor： Sean M. Seutter ,  Mehrdad M. Moslehi ,  Anand Deshpande ,  Virendra V. Rana ,  Pawan Kapur ,  Karl-Josef Kramer ,  Anthony Calcaterra ,  David Dutton ,  Takao Yonehara

IPC: H01L31/0224 ,  H01L31/0232 ,  H01B1/02 ,  H01L31/18

CPC classification number: H01B1/023 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods and structures for photovoltaic back contact solar cells having multi-level metallization with at least one aluminum-silicon alloy metallization layer are provided.

Abstract translation: 提供了具有至少一个铝 - 硅合金金属化层的具有多层金属化的光伏背接触太阳能电池的方法和结构。

公开(公告)号：US09929288B2

公开(公告)日：2018-03-27

申请号：US14846537

申请日：2015-09-04

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Heather Deshazer ,  Pawan Kapur

IPC: H01L31/0224 ,  H01L31/18 ,  H01L27/142 ,  H01L31/05 ,  H01L31/068

CPC classification number: H01L31/022458 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

公开(公告)号：US20170133546A1

公开(公告)日：2017-05-11

申请号：US15237526

申请日：2016-08-15

Applicant: Solexel, Inc.

Inventor： Virendra V. Rana ,  JianJun Liang ,  Pranav Anbalagan ,  Mehrdad M. Moslehi

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/05 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/0352

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to crystalline semiconductor, including crystalline silicon.

公开(公告)号：US20170104122A1

公开(公告)日：2017-04-13

申请号：US15131190

申请日：2016-04-18

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pawan Kapur

IPC: H01L31/061 ,  H01L31/0445 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0288 ,  H01L31/0236 ,  H01L31/028

CPC classification number: H01L31/1864 ,  H01L21/26586 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0445 ,  H01L31/061 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1868 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Base regions, emitter regions, and front surface field regions are formed through ion implantation and annealing processes.

公开(公告)号：US20160336233A1

公开(公告)日：2016-11-17

申请号：US14968685

申请日：2015-12-14

Applicant: Solexel, Inc.

Inventor： Takao Yonehara ,  Virendra V. Rana ,  Sean M. Seutter ,  Mehrdad M. Moslehi ,  Subramanian Tamilmani

IPC: H01L21/78 ,  B81C1/00 ,  H01L33/00 ,  H01L21/268 ,  H01L31/18

CPC classification number: H01L21/7813 ,  B23K26/0006 ,  B23K26/0093 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/0869 ,  B23K26/244 ,  B23K26/50 ,  B23K26/53 ,  B23K26/702 ,  B23K2101/40 ,  B23K2103/52 ,  B42D25/00 ,  B81C1/0038 ,  B81C1/0088 ,  B81C2201/0192 ,  B81C2201/0194 ,  H01L21/268 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259 ,  H01L25/0657 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1892 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/1461 ,  Y02E10/547 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Methods and systems are provided for the split and separation of a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, micro-electro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer using laser irradiation.

Abstract translation: 提供的方法和系统用于使用激光照射从较厚的施主晶片分离和分离含有光学，光电，电子，微电子机械系统（MEMS）或光电子器件的期望厚度的结晶半导体材料的层。

公开(公告)号：US20160190366A1

公开(公告)日：2016-06-30

申请号：US14846537

申请日：2015-09-04

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Heather Deshazer ,  Pawan Kapur

IPC: H01L31/0224

CPC classification number: H01L31/022458 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

Abstract translation: 提供制造方法和结构用于形成单片背面接触背面太阳能电池。 在一个实施例中，在背接触太阳能电池基板的背面形成基极和发射极接触金属化。 在背面接合太阳能电池基板的背面形成沟槽阻挡层，并且与基极和发射极接触金属化电隔离。 沟槽停止层具有用于形成多个半导体区域的图案。 在基极和发射极接触金属化和沟槽停止层上形成电绝缘层。 通过背面接合太阳能电池基板形成沟槽隔离层，其将半导体层分隔成电绝缘层上的多个太阳能电池半导体区域。

公开(公告)号：US09236510B2

公开(公告)日：2016-01-12

申请号：US14137172

申请日：2013-12-20

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan ,  Vivek Saraswat

IPC: H01L21/00 ,  H01L31/0236 ,  B23K26/06 ,  B23K26/073 ,  B23K26/36 ,  B23K26/40 ,  H01L31/068 ,  H01L31/18 ,  H01L31/056 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0445 ,  H01L31/0216

CPC classification number: H01L31/02366 ,  B23K26/066 ,  B23K26/073 ,  B23K26/364 ,  B23K26/40 ,  B23K26/402 ,  B23K2103/172 ,  B23K2103/50 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0445 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/186 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for making an ablated electrically insulating layer on a semiconductor substrate. A first relatively thin layer of at least an undoped glass or undoped oxide is deposited on a surface of a semiconductor substrate having n-type doping. A first relatively thin semiconductor layer having at least one substance chosen from amorphous semiconductor, nanocrystalline semiconductor, microcrystalline semiconductor, or polycrystalline semiconductor is deposited on the relatively thin layer of at least an undoped glass or undoped oxide. At least a layer of borosilicate glass or borosilicate/undoped glass stack is deposited on the relatively thin semiconductor layer. The at least borosilicate glass or borosilicate/undoped glass stack is selectively ablated with a pulsed laser, and the relatively thin semiconductor layer substantially protects the semiconductor substrate from the pulsed laser.

Abstract translation: 一种在半导体衬底上制造消融的电绝缘层的方法。 在具有n型掺杂的半导体衬底的表面上沉积至少未掺杂的玻璃或未掺杂氧化物的第一相对较薄的层。 具有至少一种选自非晶半导体，纳米晶体半导体，微晶半导体或多晶半导体的物质的第一相对较薄的半导体层沉积在至少未掺杂的玻璃或未掺杂氧化物的较薄层上。 至少一层硼硅酸盐玻璃或硼硅酸盐/未掺杂的玻璃堆叠沉积在相对薄的半导体层上。 至少硼硅酸盐玻璃或硼硅酸盐/未掺杂的玻璃堆叠被脉冲激光器选择性地烧蚀，并且相对薄的半导体层基本上保护半导体衬底免受脉冲激光器的影响。

公开(公告)号：US09196759B2

公开(公告)日：2015-11-24

申请号：US14629273

申请日：2015-02-23

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Pawan Kapur ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Sean M. Seutter ,  Virendra V. Rana ,  Anthony Calcaterra ,  Emmanuel Van Kerschaver

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/056

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract translation: 提供背接触式太阳能电池及制造方法。 背接触背面太阳能电池包括具有钝化层的光捕获前侧表面的衬底，掺杂的基极区域和具有极性与掺杂基极区域相反的掺杂背侧发射极区域。 背面钝化层和发射体上的图案化反射层形成光阱背面反射镜。 交叉的金属化图案位于太阳能电池的背面，并且永久性增强材料为电池提供支撑。

公开(公告)号：US20150136227A1

公开(公告)日：2015-05-21

申请号：US14601202

申请日：2015-01-20

Applicant: Solexel, Inc.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Heather Deshazer ,  Pawan Kapur

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L27/1421 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and which is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the etch stop layer. And a trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

Abstract translation: 提供制造方法和结构用于形成单片背面接触背面太阳能电池。 在一个实施例中，在背接触太阳能电池基板的背面形成基极和发射极接触金属化。 在背面接合太阳能电池基板的背面形成沟槽阻挡层，并且与基底和发射极接触金属化电隔离。 沟槽停止层具有用于形成多个半导体区域的图案。 在基极和发射极接触金属化层和蚀刻停止层上形成电绝缘层。 并且通过背接触太阳能电池基板形成沟槽隔离图案，其将半导体层分隔成电绝缘层上的多个太阳能电池半导体区域的沟槽停止层。

公开(公告)号：US20140017846A1

公开(公告)日：2014-01-16

申请号：US13727393

申请日：2012-12-26

Applicant: SOLEXEL, INC.

Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Solene Coutant ,  Heather Deshazer ,  Pranav Anbalagan ,  Benjamin Rattle

IPC: H01L31/0236

CPC classification number: H01L31/02363 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the crystalline silicon solar cell substrate is then annealed to remove damage from the laser texturization process.

Abstract translation: 提供了提高晶体硅太阳能电池的光捕获特性的方法。 在一个实施例中，晶体硅太阳能电池基板的背面用脉冲激光束纹理化。 然后对结晶硅太阳能电池基板的带纹理的背面进行退火，以消除激光纹理化过程中的损伤。