公开(公告)号：US12224179B2

公开(公告)日：2025-02-11

申请号：US18184438

申请日：2023-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Chi-Hsiang Shen ,  Te-Ming Kung ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Yang-Chun Cheng ,  William Weilun Hong ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/535

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US20230365903A1

公开(公告)日：2023-11-16

申请号：US18359364

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pinlei Edmund Chu ,  Chun-Wei Hsu ,  Ling-Fu Nieh ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Yi-Sheng Lin

IPC: C11D11/00 ,  C11D7/26 ,  H01L21/02 ,  H01L21/321

CPC classification number: C11D11/0047 ,  C11D7/268 ,  H01L21/02074 ,  C11D7/261 ,  H01L21/3212

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

公开(公告)号：US20230364733A1

公开(公告)日：2023-11-16

申请号：US18359396

申请日：2023-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Hsun Chang ,  Hung Yen ,  Chi-Hsiang Shen ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Tsung Hsien Chang ,  Ji Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/16 ,  B24B57/02 ,  B24B37/015 ,  H01L21/306

CPC classification number: B24B37/16 ,  B24B57/02 ,  B24B37/015 ,  H01L21/30625

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

公开(公告)号：US20230271298A1

公开(公告)日：2023-08-31

申请号：US18312753

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Michael Yen ,  Kao-Feng Liao ,  Hsin-Ying Ho ,  Chun-Wen Hsiao ,  Sheng-Chao Chuang ,  Ting-Hsun Chang ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Peng-Chung Jangjian ,  Ji James Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/26 ,  B24B37/005 ,  B24B37/24 ,  B24B37/04

CPC classification number: B24B37/26 ,  B24B37/005 ,  B24B37/24 ,  B24B37/042

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

公开(公告)号：US20220262620A1

公开(公告)日：2022-08-18

申请号：US17734314

申请日：2022-05-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  B08B3/04 ,  H01L21/306 ,  H01L21/687

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US20200098590A1

公开(公告)日：2020-03-26

申请号：US16138806

申请日：2018-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  William Weilun Hong ,  Chi-hsiang Shen ,  Chia-Wei Ho ,  Yang-chun Cheng

IPC: H01L21/321 ,  H01L21/768 ,  C09G1/02

Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.

公开(公告)号：US09352443B2

公开(公告)日：2016-05-31

申请号：US14078999

申请日：2013-11-13

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Shich-Chang Suen ,  Chin-Hsiang Chan ,  Liang-Guang Chen ,  Yung-Cheng Lu

IPC: B24B37/34 ,  B24B49/12 ,  B24B37/20 ,  B24B37/005 ,  B24B37/10 ,  B24B49/10 ,  B24B37/26

CPC classification number: B24B37/34 ,  B24B37/005 ,  B24B37/105 ,  B24B37/205 ,  B24B37/26 ,  B24B49/105 ,  B24B49/12

Abstract: A platen assembly includes a platen body, a polishing pad, and a fountain slurry supplier. The platen body has an upper surface. The polishing pad is disposed on the upper surface of the platen body. The fountain slurry supplier is at least partially disposed on the upper surface of the platen body for supplying slurry up onto the polishing pad.

Abstract translation: 压板组件包括压板体，抛光垫和喷泉浆料供应器。 压板本体具有上表面。 抛光垫设置在压板本体的上表面上。 喷泉浆料供应器至少部分地设置在压板主体的上表面上，用于将浆料提供到抛光垫上。

公开(公告)号：US09305880B2

公开(公告)日：2016-04-05

申请号：US14061782

申请日：2013-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Fu-Ming Huang ,  Han-Hsin Kuo ,  Chi-Ming Tsai ,  Liang-Guang Chen

IPC: H01L21/4763 ,  H01L23/532 ,  H01L21/321 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/321 ,  H01L21/76862 ,  H01L21/76883 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor substructure with improved performance and a method of forming the same is described. The method includes providing a semiconductor dielectric layer having a recess formed therein; forming an interconnect structure with a metal liner and a conductive fill within the recess; and applying an electron beam treatment to the substructure.

Abstract translation: 描述了具有改进性能的半导体子结构及其形成方法。 该方法包括提供其中形成有凹部的半导体电介质层; 在所述凹槽内形成具有金属衬垫和导电填料的互连结构; 并对该子结构施加电子束处理。

公开(公告)号：US20230398659A1

公开(公告)日：2023-12-14

申请号：US17822867

申请日：2022-08-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Te-Chien Hou ,  Chih Hung Chen ,  Liang-Che Chen ,  Shich-Chang Suen ,  Liang-Guang Chen

IPC: B24D3/00 ,  B24B7/22 ,  H01L21/304

CPC classification number: B24D3/00 ,  H01L21/304 ,  B24B7/228

Abstract: Polishing pads having varying protrusions and methods of forming the same are disclosed. In an embodiment, a polishing pad includes a polishing pad substrate; a first protrusion on the polishing pad substrate, the first protrusion including a central region and a peripheral region surrounding the central region, and a first hardness of the central region being greater than a second hardness of the peripheral region; and a first groove adjacent a first side of the first protrusion.

公开(公告)号：US11728215B2

公开(公告)日：2023-08-15

申请号：US17333090

申请日：2021-05-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shich-Chang Suen ,  Kei-Wei Chen ,  Liang-Guang Chen

IPC: H01L21/70 ,  H01L21/768 ,  H01L21/02 ,  H01L29/66 ,  H01L21/311 ,  H01L21/285 ,  H01L21/033 ,  H01L29/78 ,  H01L23/522 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/8238 ,  H01L21/3213 ,  H01L21/32

CPC classification number: H01L21/76897 ,  H01L21/0217 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02227 ,  H01L21/02271 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/0337 ,  H01L21/28247 ,  H01L21/28525 ,  H01L21/28568 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/823821 ,  H01L23/5226 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L21/32 ,  H01L21/32134 ,  H01L21/32135 ,  H01L29/7848

Abstract: A method includes forming a first gate structure over a substrate, where the first gate structure is surrounded by a first dielectric layer; and forming a mask structure over the first gate structure and over the first dielectric layer, where forming the mask structure includes selectively forming a first capping layer over an upper surface of the first gate structure; and forming a second dielectric layer around the first capping layer. The method further includes forming a patterned dielectric layer over the mask structure, the patterned dielectric layer exposing a portion of the mask structure; removing the exposed portion of the mask structure and a portion of the first dielectric layer underlying the exposed portion of the mask structure, thereby forming a recess exposing a source/drain region adjacent to the first gate structure; and filling the recess with a conductive material.