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公开(公告)号:US06635956B2
公开(公告)日:2003-10-21
申请号:US10238433
申请日:2002-09-09
申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Yukio Okada , Yusuke Igarashi , Eiju Maehara , Kouji Takahashi
发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Yukio Okada , Yusuke Igarashi , Eiju Maehara , Kouji Takahashi
IPC分类号: H01L2302
CPC分类号: H01L24/32 , G11B5/4853 , H01L21/4832 , H01L23/3128 , H01L23/4334 , H01L23/49575 , H01L24/48 , H01L24/49 , H01L2221/68377 , H01L2224/02166 , H01L2224/05554 , H01L2224/05599 , H01L2224/32057 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/83385 , H01L2224/85424 , H01L2224/85447 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/07802 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1433 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/18301 , H01L2924/351 , H05K1/0204 , H05K1/021 , H05K1/182 , H05K1/189 , H05K2201/10416 , H05K2201/10727 , H01L2224/45099 , H01L2924/00 , H01L2924/01026 , H01L2924/01046 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要: A heat radiation electrode (15) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to the heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a first supporting member (11) are substantially within a same plane, so that it is readily affixed to a second supporting member (24). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (15), the metal plate (23) and the second supporting member (24).
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公开(公告)号:US06596564B2
公开(公告)日:2003-07-22
申请号:US10236502
申请日:2002-09-06
申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Yukio Okada , Yusuke Igarashi , Eiju Maehara , Kouji Takahashi
发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Yukio Okada , Yusuke Igarashi , Eiju Maehara , Kouji Takahashi
IPC分类号: H01L2150
CPC分类号: H01L24/83 , H01L21/4828 , H01L21/4832 , H01L23/3107 , H01L23/49513 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2221/68377 , H01L2224/05554 , H01L2224/2919 , H01L2224/32057 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/83385 , H01L2224/8385 , H01L2224/85001 , H01L2224/92 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/18301 , H01L2924/351 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2224/92247 , H01L2924/3512 , H01L2224/05599
摘要: AS conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided.
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公开(公告)号:US06462418B2
公开(公告)日:2002-10-08
申请号:US09809849
申请日:2001-03-16
申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Yukio Okada , Yusuke Igarashi , Eiju Maehara , Kouji Takahashi
发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Yukio Okada , Yusuke Igarashi , Eiju Maehara , Kouji Takahashi
IPC分类号: H01L2940
CPC分类号: H01L24/83 , H01L21/4828 , H01L21/4832 , H01L23/3107 , H01L23/49513 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L2221/68377 , H01L2224/05554 , H01L2224/2919 , H01L2224/32057 , H01L2224/32225 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L2224/73265 , H01L2224/83192 , H01L2224/83385 , H01L2224/8385 , H01L2224/85001 , H01L2224/92 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/18301 , H01L2924/351 , H01L2224/85 , H01L2224/83 , H01L2924/00012 , H01L2924/00 , H01L2924/01026 , H01L2924/01028 , H01L2224/92247 , H01L2924/3512 , H01L2224/05599
摘要: As conductive patterns 11A to 11D are formed burying in a insulating resin 10 and a conductive foil 20 is formed being half-etched, thickness of the device is made thin. As an electrode for radiation 11D is provided, a semiconductor device superior in radiation is provided.
摘要翻译: 由于形成埋入绝缘树脂10中的导电图形11A至11D,并且半导体形成导电箔20,所以该器件的厚度变薄。 作为辐射用电极11D,提供了辐射优异的半导体器件。
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24.Protection circuit device using MOSFETs and a method of manufacturing the same 失效
标题翻译: 使用MOSFET的保护电路装置及其制造方法公开(公告)号:US07211868B2
公开(公告)日:2007-05-01
申请号:US09809856
申请日:2001-03-16
IPC分类号: H01L23/62
CPC分类号: H01L23/3107 , H01L21/4832 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2221/68377 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要: A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.
摘要翻译: 使用MOSFET的保护电路装置具有多个电气分离的导电路径,将芯片中的两个功率MOSFET集成在一个芯片中的MOSFET芯片,其中栅电极和源电极固定在期望的导电路径上,设置在公共漏极上的导电材料 的MOSFET,以及覆盖所述MOSFET并且将所述导电路径支撑在一个主体中的绝缘树脂。 除去公共漏电极的附近并将源电极直接固定在导电路径上,实现低导通状态电阻。
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公开(公告)号:US07173336B2
公开(公告)日:2007-02-06
申请号:US10347010
申请日:2003-01-17
申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi
发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi
CPC分类号: H05K1/188 , H01L21/4821 , H01L21/4832 , H01L21/56 , H01L21/561 , H01L21/565 , H01L23/3107 , H01L23/49541 , H01L23/49548 , H01L23/49575 , H01L23/49582 , H01L24/05 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L25/165 , H01L25/50 , H01L2221/68377 , H01L2224/0401 , H01L2224/04042 , H01L2224/05554 , H01L2224/05557 , H01L2224/05647 , H01L2224/16 , H01L2224/16245 , H01L2224/32057 , H01L2224/32245 , H01L2224/4807 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48464 , H01L2224/48465 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/83385 , H01L2224/85447 , H01L2224/92247 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/18301 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H05K1/187 , H05K3/06 , H05K3/202 , H01L2224/85 , H01L2924/00012 , H01L2224/45099 , H01L2924/00 , H01L2924/01046 , H01L2924/3512
摘要: A semiconductor device is provided wherein conductive paths 40, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin 44, and the back surface of the conductive path 40 is exposed through the insulating resin 44 and sealed. With this arrangement, fractures of the conductive paths 40 embedded in the insulating resin 44 are suppressed.
摘要翻译: 提供一种半导体器件,其中由晶体形成的导电路径40沿着XY轴比沿着Z轴更好地嵌入绝缘树脂44中,并且导电路径40的背表面通过绝缘树脂44暴露 并密封。 通过这种布置,抑制了嵌入在绝缘树脂44中的导电通路40的断裂。
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26.Circuit device and manufacturing method of circuit device and semiconductor module 有权
标题翻译: 电路器件和半导体模块的电路器件及其制造方法公开(公告)号:US07091606B2
公开(公告)日:2006-08-15
申请号:US10372497
申请日:2003-02-24
申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi
发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi
CPC分类号: H01L21/4821 , H01L21/4832 , H01L21/56 , H01L23/3107 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L25/105 , H01L25/165 , H01L25/50 , H01L2221/68377 , H01L2224/05554 , H01L2224/16 , H01L2224/16245 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/48465 , H01L2224/48599 , H01L2224/48639 , H01L2224/48739 , H01L2224/49171 , H01L2224/73265 , H01L2224/85439 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/13055 , H01L2924/14 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19106 , H01L2924/3511 , H05K1/188 , H05K3/06 , H05K3/202 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012
摘要: After a trench 54 is formed in a conductive foil 60, the circuit elements are mounted, and the insulating resin is applied on the conductive foil 60 as the support substrate. After being inverted, the conductive foil 60 is polished on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 requisite for the circuit are formed, and can be prevented from slipping because of the curved structure 59 and a visor 58.
摘要翻译: 在导电箔60中形成沟槽54之后,安装电路元件,并且将绝缘树脂施加在作为支撑基板的导电箔60上。 反转后,将导电箔60作为用于分离的导电路径的支撑基板在绝缘树脂50上进行研磨。 因此,可以制造其中导电通路51和电路元件52由绝缘树脂50支撑的电路装置,而不使用支撑基板。 并且形成电路所需的互连线L 1至L 3,并且可以防止由于弯曲结构59和遮阳板58而滑动。
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公开(公告)号:US20050056916A1
公开(公告)日:2005-03-17
申请号:US10918105
申请日:2004-08-13
申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi
发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi
IPC分类号: H05K1/02 , H01L21/48 , H01L21/56 , H01L21/98 , H01L23/31 , H01L25/10 , H01L25/16 , H05K1/18 , H05K3/06 , H05K3/20 , H01L23/495
CPC分类号: H01L24/48 , H01L21/4821 , H01L21/4832 , H01L21/56 , H01L23/3107 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L25/0655 , H01L25/105 , H01L25/165 , H01L25/50 , H01L2221/68377 , H01L2224/05554 , H01L2224/16 , H01L2224/29101 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/48464 , H01L2224/48465 , H01L2224/48599 , H01L2224/48639 , H01L2224/48739 , H01L2224/49171 , H01L2224/73265 , H01L2224/83815 , H01L2224/83851 , H01L2224/85205 , H01L2224/85439 , H01L2224/97 , H01L2225/1029 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/12042 , H01L2924/13055 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19106 , H01L2924/3511 , H05K1/187 , H05K1/188 , H05K3/06 , H05K3/202 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/07811 , H01L2224/83205
摘要: After a trench 54 is formed in a conductive foil 60, the circuit elements are mounted, and the insulating resin is applied on the conductive foil 60 as the support substrate. After being inverted, the conductive foil 60 is polished on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 requisite for the circuit are formed, and can be prevented from slipping because of the curved structure 59 and a visor 58.
摘要翻译: 在导电箔60中形成沟槽54之后,安装电路元件,并且将绝缘树脂施加在作为支撑基板的导电箔60上。 反转后,将导电箔60作为用于分离的导电路径的支撑基板在绝缘树脂50上进行研磨。 因此,可以制造其中导电通路51和电路元件52由绝缘树脂50支撑的电路装置,而不使用支撑基板。 并且形成电路所需的互连L1至L3,并且可以防止由于弯曲结构59和遮阳板58而滑动。
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公开(公告)号:US06624511B2
公开(公告)日:2003-09-23
申请号:US09821447
申请日:2001-03-29
申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Eiju Maehara , Noriyasu Sakai , Hitoshi Takagishi , Kouji Takahashi , Kazuhisa Kusano
发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Eiju Maehara , Noriyasu Sakai , Hitoshi Takagishi , Kouji Takahashi , Kazuhisa Kusano
IPC分类号: H01L2348
CPC分类号: H01L25/16 , H01L21/4832 , H01L23/3107 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2221/68377 , H01L2224/04042 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/48465 , H01L2224/48472 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/49171 , H01L2224/73265 , H01L2224/85201 , H01L2224/85205 , H01L2224/85424 , H01L2224/85447 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/12035 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/13055 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/18301 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/2076 , H05K1/185 , H05K3/06 , H05K3/202 , H01L2924/00 , H01L2924/00012 , H01L2924/20754 , H01L2924/00015
摘要: The semiconductor elements for the small signal type circuits and the Au wire for connection are integrated as one package to produce the semiconductor devices 30A, 31A, 32, 33A, 34A and 38. In this way, the wire bonding of Au can be omitted, and the wire bonding of the small diameter Al wire and the large diameter Al wire is only required to complete the connection of the fine metal wire. These semiconductor devices have a plurality of circuit elements as one package, so that the mounting operation on the mounting board can be significantly reduced.
摘要翻译: 用于小信号电路的半导体元件和用于连接的Au线被集成为一个封装以制造半导体器件30A,31A,32,33A,34A和38.这样,可以省略Au的引线接合, 并且仅需要小直径Al线和大直径Al线的引线接合来完成细金属线的连接。这些半导体器件具有作为一个封装的多个电路元件,从而在安装上的安装操作 板可以大大减少。
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公开(公告)号:US06548328B1
公开(公告)日:2003-04-15
申请号:US09671135
申请日:2000-09-27
申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi
发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi
IPC分类号: H01L2144
CPC分类号: H01L24/48 , H01L21/4821 , H01L21/4832 , H01L21/56 , H01L23/3107 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/97 , H01L25/0655 , H01L25/105 , H01L25/165 , H01L25/50 , H01L2221/68377 , H01L2224/05554 , H01L2224/16 , H01L2224/29101 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/48464 , H01L2224/48465 , H01L2224/48599 , H01L2224/48639 , H01L2224/48739 , H01L2224/49171 , H01L2224/73265 , H01L2224/83815 , H01L2224/83851 , H01L2224/85205 , H01L2224/85439 , H01L2224/97 , H01L2225/1029 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/014 , H01L2924/07802 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/12042 , H01L2924/13055 , H01L2924/14 , H01L2924/15311 , H01L2924/15747 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/19106 , H01L2924/3511 , H05K1/187 , H05K1/188 , H05K3/06 , H05K3/202 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/00 , H01L2924/00012 , H01L2924/07811 , H01L2224/83205
摘要: After a trench 54 is formed in a conductive foil 60, the circuit elements are mounted, and the insulating resin is applied on the conductive foil 60 as the support substrate. After being inverted, the conductive foil 60 is polished on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 requisite for the circuit are formed, and can be prevented from slipping because of the curved structure 59 and a visor 58.
摘要翻译: 在导电箔60中形成沟槽54之后,安装电路元件,并且将绝缘树脂施加在作为支撑基板的导电箔60上。 反转后,将导电箔60作为用于分离的导电路径的支撑基板在绝缘树脂50上进行研磨。 因此,可以制造其中导电通路51和电路元件52由绝缘树脂50支撑的电路装置,而不使用支撑基板。 并且形成电路所需的互连L1至L3,并且可以防止由于弯曲结构59和遮阳板58而滑动。
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公开(公告)号:US06545364B2
公开(公告)日:2003-04-08
申请号:US09810110
申请日:2001-03-16
申请人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi , Hirokazu Fukuda , Hiroki Etou
发明人: Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi , Hirokazu Fukuda , Hiroki Etou
IPC分类号: H01L2348
CPC分类号: H01L24/40 , H01L21/4821 , H01L21/4832 , H01L23/3107 , H01L23/49562 , H01L24/37 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2221/68377 , H01L2224/05599 , H01L2224/16 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/48465 , H01L2224/49111 , H01L2224/73265 , H01L2224/83801 , H01L2224/8485 , H01L2224/85399 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/09701 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/19105 , H01L2924/3511 , H05K1/185 , H05K3/06 , H01L2224/81 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要: After a trench 54 is formed in a conductive foil 60, a circuit element is mounted in a flip chip method. Then, an insulating resin 50 is covered on the conductive foil 60 as a support substrate. After reversion, the conductive foil 60 is polished over the insulating resin 50 as a support substrate at this time to separate the conductive paths. Accordingly, a circuit device having the conductive paths 51 and the circuit elements 52 supported by the insulating resin 50 can be produced without employing the support substrate.
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