公开(公告)号：US09856578B2

公开(公告)日：2018-01-02

申请号：US14256619

申请日：2014-04-18

Applicant: Ratnakar D. Vispute ,  Andrew Seiser

Inventor： Ratnakar D. Vispute ,  Andrew Seiser

IPC: C30B23/06 ,  C30B29/16 ,  C23C14/08 ,  C23C14/30 ,  C23C14/52 ,  C23C14/54

CPC classification number: C30B23/066 ,  C23C14/081 ,  C23C14/30 ,  C23C14/52 ,  C23C14/541 ,  C30B29/16

Abstract: Highly textured [111] oriented films such as MgO crystalline films are deposited by e-beam evaporation on ordinary soda-lime glass. Semiconductor films such as silicon can be deposited on these MgO films using eutectics at temperatures below the softening point of ordinary glass and having extremely high textured and strong [111] orientation. The invention may be used for efficient and cost effective solar cells, displays, etc.

公开(公告)号：US09850355B2

公开(公告)日：2017-12-26

申请号：US14765488

申请日：2014-01-31

Applicant: TOYOBO CO., LTD.

Inventor： Takashi Ebata ,  Kiyoshi Iseki

IPC: B32B27/06 ,  C08J7/04 ,  C08J7/06 ,  C08J5/18 ,  C09D7/00 ,  C23C14/08 ,  C23C14/10 ,  C23C14/12 ,  C23C14/24

CPC classification number: C08J5/18 ,  B32B27/06 ,  C08J7/042 ,  C08J7/045 ,  C08J7/065 ,  C08J2367/02 ,  C09D7/20 ,  C23C14/08 ,  C23C14/081 ,  C23C14/10 ,  C23C14/12 ,  C23C14/243

Abstract: The present invention is a laminate film comprising a plastic film, and an inorganic layer and an organic layer containing a 1,3,5-triazine derivative laid on at least one surface of the plastic film, wherein the 1,3,5-triazine derivative has a sulfur-containing group as a substituent on at least one of 2, 4 and 6 positions.

公开(公告)号：US20170350949A1

公开(公告)日：2017-12-07

申请号：US15609631

申请日：2017-05-31

Applicant: LEIBNIZ-INSTITUT FUER FESTKOERPER-UND WERKSTOFFFORSCHUNG DRESDEN E.V

Inventor： Ingolf MOENCH ,  Denys MAKAROV ,  Oliver G. SCHMIDT

IPC: G01R33/09 ,  H01F1/03 ,  C23C14/18 ,  C23C14/04 ,  C23C14/08

CPC classification number: G01R33/093 ,  C23C14/042 ,  C23C14/081 ,  C23C14/18 ,  C23C14/185 ,  C23C16/403 ,  H01F1/0306 ,  H01L43/06 ,  H01L43/12

Abstract: The invention concerns the field of electronics and materials science and relates to components on flexible substrates, as are for example used as sensors or actuators in the automotive industry, mechanical engineering or electronics, and to a method for the production thereof.The object of the present invention is the specification of components on flexible substrates, the physical and in particular electrical properties of which have long-term stability, and the specification of a cost-efficient and simple method for the production thereof.The object is attained with components on flexible substrates, composed of a flexible substrate having a barrier layer arranged at least partially thereon, on which layer a components layer is at least partially positioned.

公开(公告)号：US20170327941A1

公开(公告)日：2017-11-16

申请号：US15395016

申请日：2016-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Jin KIM ,  Ki-Woong KIM ,  Joon-Myoung LEE

IPC: C23C14/34 ,  C23C14/08 ,  C23C14/35

CPC classification number: C23C14/3464 ,  C23C14/081 ,  C23C14/225 ,  C23C14/3407 ,  C23C14/345 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3423

Abstract: A sputtering apparatus includes a chamber configured to provide a space where a deposition process is performed on a substrate, a substrate holder configured to support the substrate within the chamber, and at least one turret-type target assembly located over the substrate, including a plurality of targets mounted thereon and adapted to operatively rotate by a predetermined angle about its longitudinal axis such that any one of the targets is off-axis aligned with respect to a film-deposited surface of the substrate.

公开(公告)号：US09786474B2

公开(公告)日：2017-10-10

申请号：US15027643

申请日：2014-09-25

Applicant: United Technologies Corporation

Inventor： Thomas Balzano ,  Russell A. Beers

IPC: H01J37/32 ,  C23C14/32 ,  C23C14/06 ,  C23C14/08 ,  C23C14/14 ,  H01J37/34

CPC classification number: H01J37/3266 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/0664 ,  C23C14/081 ,  C23C14/083 ,  C23C14/14 ,  C23C14/325 ,  H01J37/32055 ,  H01J37/32522 ,  H01J37/32614 ,  H01J37/32669 ,  H01J37/32816 ,  H01J37/3435 ,  H01J2237/327 ,  H01J2237/332

Abstract: A cathodic arc coating apparatus includes a vessel, a cathode disposed in the vessel, and a stinger assembly. The stinger assembly includes a first magnetic field generator disposed in a first stinger cup in selective contact with the cathode. The first stinger cup has at least a first electrically conductive cup portion spaced from a second electrically conductive cup portion by a thermally insulating layer therebetween.

公开(公告)号：US20170283940A1

公开(公告)日：2017-10-05

申请号：US15507920

申请日：2016-06-10

Applicant: ULVAC, INC.

Inventor： Shinya Nakamura ,  Yoshinori Fujii

IPC: C23C14/34

CPC classification number: C23C14/34 ,  C23C14/081 ,  C23C14/35 ,  C23C14/52 ,  C23C14/54 ,  G01L13/00 ,  H01J37/32798 ,  H01J37/32816 ,  H01J37/34

Abstract: A method of discriminating a state of a sputtering apparatus in which, by sputtering a target (2), a film is formed on a substrate disposed to lie opposite to the target, the discrimination being made, prior to the film formation on the substrate, as to whether an atmosphere in the vacuum chamber is in a state fit for film formation. As the sputtering apparatus, use is made of one provided inside the vacuum chamber with an isolated space which is isolated from the vacuum chamber by an isolating means (6, 71˜73), the isolated space being for the target and the substrate to lie therein opposite to each other, the sputtering apparatus being so arranged that the isolated space is evacuated accompanied by the evacuation in the vacuum chamber. The vacuum chamber is evacuated to a predetermined set pressure and a gas is introduced therein in this state.

公开(公告)号：US20170260620A1

公开(公告)日：2017-09-14

申请号：US15597170

申请日：2017-05-17

Applicant: Hong Kong Baptist University

Inventor： Kok Wai CHEAH ,  Wing Yui LAM ,  Hoi Lam TAM

IPC: C23C14/08 ,  C23C14/58 ,  C23C14/22 ,  C23C14/10 ,  C23C14/34

CPC classification number: C23C14/081 ,  C03C3/06 ,  C03C17/245 ,  C03C17/36 ,  C03C17/3639 ,  C03C17/3644 ,  C03C17/3649 ,  C03C2217/214 ,  C03C2218/15 ,  C03C2218/32 ,  C03C2218/328 ,  C03C2218/33 ,  C23C14/024 ,  C23C14/10 ,  C23C14/221 ,  C23C14/30 ,  C23C14/34 ,  C23C14/3464 ,  C23C14/5806

Abstract: A method to transfer a layer of harder thin film substrate onto a softer, flexible substrate. In particular, the present invention provides a method to deposit a layer of sapphire thin film on to a softer and flexible substrate e.g. quartz, fused silica, silicon, glass, toughened glass, PET, polymers, plastics, paper and fabrics. This combination provides the hardness of sapphire thin film to softer flexible substrates.

公开(公告)号：US20170258597A1

公开(公告)日：2017-09-14

申请号：US15385061

申请日：2016-12-20

Applicant: Beamalloy Technologies, LLC

Inventor： Arnold H. Deutchman ,  Robert J. Partyka ,  Robert J. Borel ,  Stephen White

IPC: A61F2/30 ,  A61F2/34 ,  A61F2/38 ,  A61F2/40 ,  A61L27/50 ,  A61F2/44 ,  A61F2/36 ,  A61L27/04 ,  A61L27/30 ,  C23C28/04 ,  A61F2/42

CPC classification number: A61F2/30767 ,  A61F2/30724 ,  A61F2/3094 ,  A61F2/34 ,  A61F2/36 ,  A61F2/3609 ,  A61F2/3662 ,  A61F2/38 ,  A61F2/3804 ,  A61F2/4014 ,  A61F2/4059 ,  A61F2/4081 ,  A61F2/4225 ,  A61F2/4241 ,  A61F2/4261 ,  A61F2/4405 ,  A61F2/4425 ,  A61F2002/30026 ,  A61F2002/30604 ,  A61F2002/30629 ,  A61F2002/30649 ,  A61F2002/30675 ,  A61F2002/30682 ,  A61F2002/30929 ,  A61F2002/30934 ,  A61F2002/30935 ,  A61F2002/345 ,  A61F2002/3496 ,  A61F2002/3611 ,  A61F2002/3813 ,  A61F2002/4022 ,  A61F2002/4233 ,  A61F2002/4243 ,  A61F2002/4264 ,  A61F2002/443 ,  A61F2310/00011 ,  A61F2310/00023 ,  A61F2310/00029 ,  A61F2310/00059 ,  A61F2310/00089 ,  A61F2310/00101 ,  A61F2310/00592 ,  A61F2310/00604 ,  A61F2310/0061 ,  A61F2310/00616 ,  A61F2310/00634 ,  A61F2310/0073 ,  A61F2310/00856 ,  A61L27/042 ,  A61L27/045 ,  A61L27/306 ,  A61L27/50 ,  A61L2400/10 ,  A61L2400/12 ,  A61L2430/02 ,  A61L2430/24 ,  C23C14/0031 ,  C23C14/022 ,  C23C14/0641 ,  C23C14/081 ,  C23C14/22 ,  C23C14/46 ,  C23C28/042 ,  C23C28/044 ,  C23C28/046

Abstract: An orthopaedic implant can replace a joint in a patient. The orthopaedic implant includes a first component having a first component surface and a second component having a second component surface. The first component surface and the second component surface mate at an interface. The first component surface includes a metal substrate, a nanotextured surface, a ceramic coating, and a transition zone. The nanotextured surface is disposed directly upon the metal substrate and has surface features in a size of 10−9 meters. The ceramic coating conforms to the nanotextured surface and includes a plurality of bio-active sites configured to attract and retain calcium and phosphorous cations. The transition zone is disposed between the metal substrate and the ceramic coating. The transition zone includes a concentration gradient transitioning from the metal substrate to the ceramic coating and there is no distinct interface between the metal substrate and the ceramic coating.

公开(公告)号：US09750150B2

公开(公告)日：2017-08-29

申请号：US14453102

申请日：2014-08-06

Applicant: APPLE INC.

Inventor： Rudolf Beckmann ,  Sabine Nolker

IPC: C04B35/115 ,  C04B41/87 ,  C23C16/513 ,  C23C14/34 ,  H05K5/03 ,  C04B41/50 ,  C04B41/00 ,  C23C14/08 ,  C23C16/40 ,  C30B29/20

CPC classification number: H05K5/03 ,  C04B41/009 ,  C04B41/5031 ,  C23C14/081 ,  C23C14/34 ,  C23C16/403 ,  C23C16/513 ,  C30B29/20 ,  Y10T428/2495 ,  Y10T428/24967 ,  C04B35/115

Abstract: A break resistant sapphire plate and a corresponding production process. The sapphire plate may include a planar sapphire substrate, and at least one shock absorbing layer arranged on a surface of the substrate. The shock absorbing layer may have a thickness of between 0.1% to 10% of the thickness of the substrate. The production process for producing the sapphire plate may include providing a planar sapphire substrate, and coating at least one surface of the substrate with a shock absorbing layer. The shock absorbing layer may include a layer thickness between 0.1% to 10% of the thickness of the substrate.

公开(公告)号：US09714866B1

公开(公告)日：2017-07-25

申请号：US15352196

申请日：2016-11-15

Applicant: ROHM CO., LTD.

Inventor： Tatsuya Suzuki ,  Yoshikazu Fujimori

IPC: G01J5/02 ,  C23C14/18 ,  C23C14/08 ,  C23C14/34

CPC classification number: G01J5/0235 ,  C23C14/081 ,  C23C14/083 ,  C23C14/185 ,  C23C14/34 ,  G01J5/024 ,  G01J5/34

Abstract: A resist mask 40, having penetrating holes 41, is formed on a rear surface of a silicon substrate 2. A planar shape of each penetrating hole 41 is formed to a shape with which its respective sides are curved to inwardly convex arcuate shapes with respect to a regular quadrilateral that is a target shape of a transverse section at a processing ending end side of a corresponding cavity 3. Next, dry etching is applied to the silicon substrate 2. The cavities 3 are thereby formed in the silicon substrate 2. As the etching progresses, a transverse sectional shape of each cavity 3 decreases in inward projection amounts of the respective arcuate shaped sides in the transverse sectional shape of the corresponding penetrating hole 41 of the resist mask 40. At a processing ending end side of the cavity 3, its planar shape is substantially the same shape as the regular quadrilateral that is the target shape.