公开(公告)号：US20170221720A1

公开(公告)日：2017-08-03

申请号：US15490033

申请日：2017-04-18

Applicant: PSK INC.

Inventor： Jeonghee CHO ,  Hee Sun CHAE

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/3213 ,  B08B7/00 ,  H01L21/02

CPC classification number: H01L21/31116 ,  B08B5/00 ,  B08B7/0035 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/31138 ,  H01L21/32136

Abstract: Provided are an apparatus and a method for treating substrates. The apparatus includes a process chamber, a support plate to support a substrate inside the process chamber, a gas supply unit to supply a gas into the process chamber, a first plasma generation unit provided to generate plasma inside the process chamber, and a second plasma generation unit provided to generate plasma outside the process chamber. An etching process, an ashing process, an edge cleaning process, and a back-surface cleaning process are sequentially performed on the substrate inside the process chamber.

公开(公告)号：US20170221683A1

公开(公告)日：2017-08-03

申请号：US15416326

申请日：2017-01-26

Applicant: RETRO-SEMI TECHNOLOGIES, LLC

Inventor： Dong-Soo KIM ,  Min-Su JOO ,  Min Kyu CHU

IPC: H01J37/32 ,  B08B9/027 ,  B08B7/00

CPC classification number: H01J37/32834 ,  B08B7/0035 ,  B08B9/027 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32183 ,  H01J37/32862 ,  H01J2237/335

Abstract: A cleaning apparatus of an exhaust path of a process reaction chamber used in a manufacturing of articles including a semiconductor or an LCD. The cleaning apparatus of the exhaust path includes a housing having an inflow pipe, connected to an upstream end of the exhaust path, an outflow pipe, connected to a downstream end of the exhaust path, and a connecting pipe disposed between the inflow pipe and the outflow pipe. A radio frequency generator in the housing applies radio frequency power to the inflow pipe and to the outflow pipe via respective coils. Plasma induced within the inflow and outflow pipes from RF power applied via the respective coils causes the generation of radicals from the exhaust gas flowing within. The radicals act to dislodge accumulated particulates within the exhaust path downstream of the cleaning apparatus.

公开(公告)号：US20170154757A1

公开(公告)日：2017-06-01

申请号：US15428808

申请日：2017-02-09

Applicant: ASM IP Holding B.V.

Inventor： Jereld Lee Winkler

IPC: H01J37/32 ,  B08B7/00 ,  C23C16/52 ,  C23C16/50 ,  C23C16/452 ,  C23C16/455

CPC classification number: H01J37/32422 ,  B08B7/0035 ,  C23C16/452 ,  C23C16/45557 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32862 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/335

Abstract: A system and method for providing intermediate reactive species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as intermediate reactive species from the remote plasma unit are provided to the reaction chamber.

公开(公告)号：US20170133208A1

公开(公告)日：2017-05-11

申请号：US15411711

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

公开(公告)号：US20170027049A1

公开(公告)日：2017-01-26

申请号：US15147974

申请日：2016-05-06

Applicant: Applied Materials, Inc.

Inventor： Rongping WANG ,  Jibing ZENG ,  David Muquing HOU ,  Michael S. COX ,  Zheng YUAN ,  James L'HEUREUX

IPC: H05H1/24 ,  H01L21/67 ,  H01J37/32

CPC classification number: H05H1/2406 ,  H01J37/3211 ,  H01J37/32348 ,  H01J2237/022 ,  H01J2237/327 ,  H01J2237/335 ,  H05H1/46 ,  H05H2001/2468 ,  H05H2001/4667 ,  H05H2245/1225 ,  H05H2245/123

Abstract: Embodiments disclosed herein include a plasma source, an abatement system and a vacuum processing system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source includes a dielectric tube and a coil antenna surrounding the tube. The coil antenna includes a plurality of turns, and at least one turn is shorted. Selectively shorting one or more turns of the coil antenna helps reduce the inductance of the coil antenna, allowing higher power to be supplied to the coil antenna that covers more processing volume. Higher power supplied to the coil antenna and larger processing volume lead to an improved DRE.

Abstract translation: 本文公开的实施例包括用于减轻半导体工艺中产生的化合物的等离子体源，减排系统和真空处理系统。 在一个实施例中，等离子体源包括介电管和围绕管的线圈天线。 线圈天线​​包括多个匝，并且至少一匝短路。 选择性地短路一圈或多圈线圈天线有助于降低线圈天线的电感，从而允许更高的功率供应到覆盖更多处理量的线圈天线。 提供给线圈天线的较高功率和较大的处理量导致改进的DRE。

公开(公告)号：US09546422B2

公开(公告)日：2017-01-17

申请号：US14387978

申请日：2013-03-13

Applicant: HITACHI KOKUSAI ELECTRIC INC.

Inventor： Yoshihiko Yanagisawa ,  Tetsuaki Inada

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/02

CPC classification number: C23C16/4405 ,  C23C16/455 ,  C23C16/45551 ,  C23C16/52 ,  H01J37/32862 ,  H01J37/32889 ,  H01J2237/335 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02263 ,  H01L21/0228

Abstract: A semiconductor device manufacturing method includes: a step wherein a processing substrate to be processed is placed on a substrate mounting member that is provided in a processing chamber having a plurality of gas supply regions; a film-forming step wherein a processing gas is supplied to the processing chamber, and the substrate is processed; a step wherein the substrate is carried out from the processing chamber; and a cleaning step wherein the density of the cleaning gas is controlled, while controlling cleaning gas quantities in the gas supply regions, respectively, in a state wherein the substrate is not placed in the processing chamber.

Abstract translation: 一种半导体器件的制造方法，其特征在于，具备：处理用处理基板被配置在具有多个气体供给区域的处理室内的基板安装部件上的工序; 成膜步骤，其中处理气体被供应到处理室，并且处理基板; 从所述处理室进行所述基板的工序; 以及清洁步骤，其中在其中基板未被放置在处理室中的状态下分别控制气体供应区域中的清洁气体量的同时控制清洁气体的密度。

公开(公告)号：US09478408B2

公开(公告)日：2016-10-25

申请号：US14297745

申请日：2014-06-06

Applicant: Lam Research Corporation

Inventor： Hu Kang ,  Adrien LaVoie

IPC: H05H1/24 ,  H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44

CPC classification number: H01J37/32853 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32137 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/32926 ,  H01J2237/3321 ,  H01J2237/335 ,  H01L21/02057

Abstract: Systems and methods for operating a substrate processing system include processing a substrate arranged on a substrate support in a processing chamber. At least one of precursor gas and/or reactive gas is supplied during the processing. The substrate is removed from the processing chamber. Carrier gas and purge gas are selectively supplied to the processing chamber. RF plasma is generated in the processing chamber during N cycles, where N is an integer greater than one. The RF plasma is on for a first period and off for a second period during each of the N cycles. The purge gas is supplied during at least part of each of the N cycles.

Abstract translation: 用于操作衬底处理系统的系统和方法包括处理布置在处理室中的衬底支撑件上的衬底。 在处理期间供应至少一种前体气体和/或反应性气体。 将衬底从处理室中取出。 选择性地将载气和吹扫气体供给到处理室。 在N个周期内，在处理室中产生RF等离子体，其中N是大于1的整数。 RF等离子体在第一周期期间导通，并且在N个周期的每一个期间关闭第二周期。 净化气体在N个循环的每一个的至少一部分期间供应。

公开(公告)号：US20160233059A1

公开(公告)日：2016-08-11

申请号：US15017317

申请日：2016-02-05

Applicant: IonField Holdings, LLC

Inventor： Paul F. Hensley ,  David Gabriel

IPC: H01J37/32

CPC classification number: H01J37/32348 ,  H01J37/32018 ,  H01J37/32532 ,  H01J37/32568 ,  H01J2237/335 ,  H05H1/2406 ,  H05H2001/2418 ,  H05H2001/2437

Abstract: A system to generate plasma to clean at least one object, the apparatus comprising a microplate with an electrode support array comprising a plurality of matched pairs of elongated dielectric barrier members connected to a plurality of electrodes, with said dielectric barrier members of said matched pair being spaced at a pre-determined non-uniform gap, a variable time scale pulsed power source electrically coupled to said electrodes to provide electrical pulses and a plurality of electronic components to control polarity of said electrical pulses, such that said pulses produce electron streamers from opposing elongated dielectric barrier members of said plurality of matched pairs and charge on a surface of said dielectric barrier member is substantially evenly distributed.

Abstract translation: 一种用于产生等离子体以清洁至少一个物体的系统，所述装置包括具有电极支撑阵列的微板，所述电极支撑阵列包括连接到多个电极的多个匹配成对的细长电介质阻挡构件，所述匹配对的所述电介质阻挡构件为 以预定的非均匀间隙间隔开，电可耦合到所述电极的可变时标脉冲电源以提供电脉冲和多个电子部件来控制所述电脉冲的极性，使得所述脉冲从相对的方向产生电子拖缆 所述多个匹配对中的细长电介质阻挡构件并且在所述电介质阻挡构件的表面上充电基本上均匀分布。

公开(公告)号：US20160133442A1

公开(公告)日：2016-05-12

申请号：US14995187

申请日：2016-01-13

Applicant: Applied Materials, Inc.

Inventor： Michael S. COX ,  Rongping WANG ,  Brian T. WEST ,  Roger M. JOHNSON ,  Colin John DICKINSON

IPC: H01J37/32

CPC classification number: H01J37/32844 ,  B01D53/323 ,  B01D2257/55 ,  B01D2257/553 ,  B01D2257/556 ,  B01D2258/0216 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32596 ,  H01J37/32669 ,  H01J37/32825 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/02123 ,  H01L21/02274 ,  Y02C20/30

Abstract: Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.

Abstract translation: 本文公开的实施方案包括减轻半导体工艺中产生的化合物的减排系统。 减排系统包括具有平行于第一板的第一板和第二板的等离子体源。 电极设置在第一和第二板之间，并且外壁设置在围绕电极的第一和第二板之间。 等离子体源具有设置在第一板上的第一多个磁体和设置在第二板上的第二多个磁体。 由第一和第二多个磁体产生的磁场基本上垂直于在电极和外壁之间产生的电场。 在该配置中，产生致密等离子体。

公开(公告)号：US09281244B1

公开(公告)日：2016-03-08

申请号：US14490598

申请日：2014-09-18

Applicant: Jungrae Park ,  Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

Inventor： Jungrae Park ,  Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

IPC: H01L21/02 ,  H01L21/78 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/67 ,  H01J37/32 ,  B23K26/36

CPC classification number: H01L21/78 ,  B23K26/364 ,  H01J37/32889 ,  H01J2237/335 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/67207

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with an adaptive optics-controlled laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

Abstract translation: 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。 然后用自适应光学控制激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。