公开(公告)号：US09156735B2

公开(公告)日：2015-10-13

申请号：US13642553

申请日：2011-04-27

申请人： John J. Maloney ,  Robert P. Blonski ,  Chandrashekhar S. Khadilkar ,  Srinivasan Sridharan

发明人： John J. Maloney ,  Robert P. Blonski ,  Chandrashekhar S. Khadilkar ,  Srinivasan Sridharan

IPC分类号： H01L31/048 ,  C03C27/04 ,  H01L21/02 ,  H01L21/50 ,  H01L23/10 ,  C03C3/066 ,  C03C3/12 ,  C03C3/14 ,  C03C8/04 ,  C03C8/14 ,  H01L51/52

CPC分类号： C03C27/044 ,  C03C3/066 ,  C03C3/122 ,  C03C3/14 ,  C03C8/04 ,  C03C8/14 ,  H01L21/02345 ,  H01L21/50 ,  H01L23/10 ,  H01L31/0481 ,  H01L31/0488 ,  H01L51/5246 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  Y02E10/50 ,  H01L2924/00

摘要： Durable hermetic seals between two inorganic substrates are produced using a high-intensity electromagnetic energy source, such as laser, to heat and seal enamel layers with controlled absorption of high-intensity energy source. Durable hermetic seals incorporating electrical feedthroughs are also produced.

摘要翻译： 使用高强度电磁能源（例如激光）产生两个无机基底之间的耐久气密密封，以加热和密封具有受控吸收的高强度能量源的搪瓷层。 还生产结合电馈通的耐用气密密封件。

公开(公告)号：US09064684B1

公开(公告)日：2015-06-23

申请号：US13607511

申请日：2012-09-07

申请人： Collin K. L. Mui ,  Lakshminarayana Nittala ,  Nerissa Draeger

发明人： Collin K. L. Mui ,  Lakshminarayana Nittala ,  Nerissa Draeger

IPC分类号： B05C11/00 ,  H01L21/00 ,  H01L21/02 ,  B05C1/00

CPC分类号： H01L21/00 ,  B05C1/00 ,  B05C11/00 ,  C23C16/44 ,  C23C16/45523 ,  H01L21/02107 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02345

摘要： Methods and apparatus for filling gaps on partially manufactured semiconductor substrates with dielectric material are provided. In certain embodiments, the methods include introducing a first process gas into the processing chamber and accumulating a second process gas in an accumulator maintained at a pressure level substantially highest than that of the processing chamber pressure level. The second process gas is then rapidly introduced from the accumulator into the processing chamber. An excess amount of the second process gas may be provided in the processing chamber during the introduction of the second process gas. Flowable silicon-containing films forms on a surface of the substrate to at least partially fill the gaps.

摘要翻译： 提供了用电介质材料在部分制造的半导体衬底上填充间隙的方法和装置。 在某些实施方案中，所述方法包括将第一工艺气体引入处理室并将第二工艺气体积聚在保持在基本上高于处理室压力水平的压力水平的蓄能器中。 然后将第二工艺气体从蓄能器快速地引入到处理室中。 在引入第二处理气体期间，可以在处理室中设置过量的第二处理气体。 可流动的含硅膜在基材的表面上形成以至少部分地填充间隙。

公开(公告)号：US20140339681A1

公开(公告)日：2014-11-20

申请号：US14345558

申请日：2012-07-18

申请人： Christophe Figuet ,  Christophe Gourdel

发明人： Christophe Figuet ,  Christophe Gourdel

IPC分类号： H01L21/02 ,  H01L23/00 ,  H01L21/3105 ,  H01L29/06 ,  H01L21/263 ,  H01L21/304

CPC分类号： H01L21/02345 ,  H01L21/263 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/76254 ,  H01L23/564 ,  H01L29/0657 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a method for fabricating a composite structure comprising a layer to be separated by irradiation, the method comprising the formation of a stack containing: a support substrate formed from a material that is at least partially transparent at a determined wavelength; a layer to be separated; and a separation layer interposed between the support substrate and the layer to be separated, the separation layer being adapted to be separated by exfoliation under the action of radiation having a wavelength corresponding to the determined wavelength. Furthermore, the method comprises, during the step for forming the composite step, a treatment step modifying the optical properties in reflection at the interface between the support substrate and the separation layer or on the upper face of the support substrate.

摘要翻译： 本发明涉及一种用于制造复合结构的方法，所述复合结构包括通过照射分离的层，所述方法包括形成堆叠，所述堆叠包含：由以确定的波长至少部分透明的材料形成的支撑衬底; 一层要分开的; 以及插入在支撑基板和待分离层之间的分离层，分离层适于在具有对应于所确定的波长的波长的辐射的作用下通过剥离而分离。 此外，该方法包括在形成复合步骤的步骤期间，修改在支撑衬底和分离层之间或支撑​​衬底的上表面上的界面处的反射光学性质的处理步骤。

公开(公告)号：US20140322921A1

公开(公告)日：2014-10-30

申请号：US14120013

申请日：2014-04-15

申请人： Iftikhar Ahmad ,  Mikhail Baklanov ,  Liping Zhang

发明人： Iftikhar Ahmad ,  Mikhail Baklanov ,  Liping Zhang

IPC分类号： H01L21/02 ,  H01L21/268

CPC分类号： H05B6/80 ,  H01L21/02203 ,  H01L21/02321 ,  H01L21/02345 ,  H01L21/02359 ,  H01L21/2686 ,  H01L21/67115 ,  H01L21/67167

摘要： A method for processing a dielectric film on a substrate comprises: depositing a porous dielectric film on a substrate; removing the porogen; stuffing the film with a protective polymeric material; performing at least one intermediate processing step on the stuffed dielectric film; placing the film in a microwave applicator cavity and heating to a first temperature to partially burn out the polymeric material; introducing a controlled amount of a polar solvent into the porosity created by the partial burn out; applying microwave energy to heat the film to a second selected temperature below the boiling point of the solvent to clean away remaining polymeric material; and applying microwave energy to heat the film to a third temperature above the boiling point of the solvent to completely burnout the residues of polymeric material. The interaction of the polar solvent with the microwaves enhances the efficiency of the cleaning process.

摘要翻译： 一种用于处理衬底上的电介质膜的方法，包括：在衬底上沉积多孔电​​介质膜; 去除致孔剂; 用保护性聚合物材料填充该膜; 在填充的电介质膜上执行至少一个中间处理步骤; 将膜放置在微波施加器腔中并加热至第一温度以部分地烧掉聚合物材料; 将受控量的极性溶剂引入由部分烧尽产生的孔隙中; 施加微波能量以将薄膜加热到低于溶剂沸点的第二选定温度以清除剩余的聚合物材料; 并施加微波能量以将膜加热到高于溶剂沸点的第三温度以完全燃烧聚合材料的残余物。 极性溶剂与微波的相互作用提高了清洗过程的效率。

公开(公告)号：US08795556B2

公开(公告)日：2014-08-05

申请号：US13454723

申请日：2012-04-24

申请人： Qinghuang Lin

发明人： Qinghuang Lin

IPC分类号： C09K5/00 ,  G03F7/095 ,  G03F7/075 ,  H01L21/3105 ,  H01L21/768 ,  H01L21/027 ,  G03F7/004 ,  H01L21/31 ,  G03F7/039 ,  H01L21/02 ,  H01L23/532 ,  G03F7/038

CPC分类号： H01L23/53295 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0757 ,  G03F7/095 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/02345 ,  H01L21/0276 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A hybrid photo-patternable dielectric material is provided that has dual-tone properties with a parabola like dissolution response to radiation. In one embodiment, the hybrid photo-patternable dielectric material includes a composition of at least one positive-tone component including a positive-tone polymer, positive-tone copolymer, or blends of positive-tone polymers and/or positive-tone copolymers having one or more acid sensitive positive-tone functional groups; at least one negative-tone component including a negative-tone polymer, negative-tone copolymer, or blends of negative-tone polymers and/or negative-tone copolymers having one or more acid sensitive negative-tone functional groups; at least one photoacid generator; and at least one solvent that is compatible with the positive-tone and negative-tone components.

摘要翻译： 提供了具有双重色调的混合光可图案化电介质材料，具有抛物线，如对辐射的溶解响应。 在一个实施方案中，混合光可图案化电介质材料包括至少一种正色调组分的组合物，其包括正色调聚合物，正色调共聚物或具有一个单体的正性聚合物和/或正性色调共聚物的共混物 或更多的酸敏感正音官能团; 至少一种负色调组分，包括负色调聚合物，负性色谱共聚物或具有一个或多个酸敏感负性官能团的负色调聚合物和/或负色调共聚物的共混物; 至少一个光致酸发生器; 和至少一种与正性和负性成分相容的溶剂。

公开(公告)号：US07858533B2

公开(公告)日：2010-12-28

申请号：US12043772

申请日：2008-03-06

申请人： Junjun Liu ,  Dorel I. Toma ,  Eric M. Lee

发明人： Junjun Liu ,  Dorel I. Toma ,  Eric M. Lee

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/268 ,  H01L21/31695

摘要： A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.

摘要翻译： 描述了在基底上固化低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于约4的值。该方法包括使低k电介质 膜对红外（IR）辐射和紫外线（UV）辐射。

公开(公告)号：US07767538B2

公开(公告)日：2010-08-03

申请号：US11507007

申请日：2006-08-21

申请人： Hirotaka Nishino ,  Koichi Kato

发明人： Hirotaka Nishino ,  Koichi Kato

IPC分类号： H01L21/26 ,  H01L27/14 ,  H01L27/30

CPC分类号： H01L21/3211 ,  C23C16/56 ,  H01L21/02148 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02345 ,  H01L21/28273 ,  H01L21/3105 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/3185

摘要： It is made possible to form a silicon nitride film, an aluminum oxide film and a transition metal high-k insulation film of high quality. A manufacturing method includes: forming an insulation film having at least one kind of bonds selected out of silicon-nitrogen bonds, aluminum-oxygen bonds, transition metal-oxygen-silicon bonds, transition metal-oxygen-aluminum bonds, and transition metal-oxygen bonds on either a film having a semiconductor as a main component or a semiconductor substrate, and irradiating the insulation film with pulse infrared light having a wavelength corresponding to a maximum intensity in a wavelength region depending upon the insulation film and having a wavelength absorbed by the insulation film.

摘要翻译： 可以形成高质量的氮化硅膜，氧化铝膜和过渡金属高k绝缘膜。 一种制造方法包括：形成具有选自硅 - 氮键，铝 - 氧键，过渡金属 - 氧 - 硅键，过渡金属 - 氧 - 铝键和过渡金属 - 氧中的至少一种键的绝缘膜 在具有半导体作为主要成分的膜或半导体衬底上的膜上键合，并且用绝缘膜照射具有与波长区域中的最大强度相对应的波长的脉冲红外光，该波长区域取决于绝缘膜并且具有由 绝缘膜。

公开(公告)号：US20080076850A1

公开(公告)日：2008-03-27

申请号：US11853325

申请日：2007-09-11

申请人： Akira ASANO

发明人： Akira ASANO

IPC分类号： C08F2/46

CPC分类号： H01L21/02118 ,  B05D3/0209 ,  B05D3/0254 ,  B05D3/067 ,  B05D3/068 ,  C08F2/46 ,  C08J3/28 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/76801

摘要： A production method of an insulating film includes a process of applying a film forming composition to form a film; and a process of irradiating the film with at least two kinds of high energy rays to cure the film.

摘要翻译： 绝缘膜的制造方法包括施加成膜组合物以形成膜的方法; 以及用至少两种高能射线照射薄膜以使薄膜固化的工艺。

公开(公告)号：US20070281082A1

公开(公告)日：2007-12-06

申请号：US11421992

申请日：2006-06-02

申请人： Nima Mokhlesi ,  Randhir Thakur

发明人： Nima Mokhlesi ,  Randhir Thakur

IPC分类号： C23C16/00 ,  B05D3/00 ,  B29C71/04 ,  B29C71/02

CPC分类号： H01L21/3145 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/511 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02345 ,  H01L21/02354 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/31645 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/40114 ,  H01L29/42324

摘要： System and methods for flash heating of materials deposited using atomic layer deposition techniques are disclosed. By flash heating the surface of the deposited material after each or every few deposition cycles, contaminants such as un-reacted precursors and byproducts can be released from the deposited material. A higher quality material is deposited by reducing the incorporation of impurities. A flash heating source is capable of quickly raising the temperature of the surface of a deposited material without substantially raising the temperature of the bulk of the substrate on which the material is being deposited. Because the temperature of the bulk of the substrate is not significantly raised, the bulk acts like a heat sink to aid in cooling the surface after flash heating. In this manner, processing times are not significantly increased in order to allow the surface temperature to reach a suitably low temperature for deposition.

摘要翻译： 公开了使用原子层沉积技术沉积的材料的闪蒸加热的系统和方法。 通过在每个或几个沉积循环之后快速加热沉积材料的表面，可以从沉积材料中释放诸如未反应前体和副产物的污染物。 通过减少杂质的掺入沉积更高质量的材料。 闪光加热源能够快速提高沉积材料的表面的温度，而不会基本上提高材料沉积的基底的体积的温度。 因为基板的体积的温度没有显着上升，所以散热器的作用就像散热器，以帮助在闪光加热之后冷却表面。 以这种方式，为了使表面温度达到适当低的沉积温度，处理时间不会显着增加。

公开(公告)号：US20060261484A1

公开(公告)日：2006-11-23

申请号：US11492255

申请日：2006-07-25

申请人： Paul Farrar

发明人： Paul Farrar

IPC分类号： H01L23/52

CPC分类号： H01L21/02118 ,  C08L65/00 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/312 ,  H01L21/31695 ,  H01L21/7682 ,  H01L23/3171 ,  H01L23/5222 ,  H01L23/5329 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10873 ,  H01L27/11 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： Various apparatus and systems include foamed polynorbornene insulating material. The foamed polynorbornene material may provide electrical insulation between conductive layers of an integrated circuit device.

摘要翻译： 各种装置和系统包括泡沫聚降冰片烯绝缘材料。 泡沫聚降冰片烯材料可以在集成电路器件的导电层之间提供电绝缘。