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公开(公告)号：US20240297094A1
公开(公告)日：2024-09-05
申请号：US18411320
申请日：2024-01-12
IPC分类号： H01L23/373 , G06F1/20 , H01L23/42 , H05K7/20
CPC分类号： H01L23/3737 , G06F1/206 , H01L23/42 , H05K7/20463
摘要： A heat dissipation structure, of a semiconductor chip that includes a substrate and a die provided on a top surface of the substrate, includes: a heat dissipator provided along a surface of the die; a liquid metal interposed between the die and the heat dissipator; and a thermal putty interposed between the substrate and the heat dissipator in a state of sealing therebetween and surrounding the die.
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公开(公告)号：US12080692B2
公开(公告)日：2024-09-03
申请号：US17578799
申请日：2022-01-19
发明人： Keisuke Eguchi , Hiroyuki Masumoto
IPC分类号： H01L25/16 , H01L21/48 , H01L23/00 , H01L23/373
CPC分类号： H01L25/16 , H01L21/4807 , H01L23/3735 , H01L24/29 , H01L24/30 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/29147 , H01L2224/3003 , H01L2224/32225 , H01L2224/48225 , H01L2224/73265 , H01L2924/1203 , H01L2924/1205 , H01L2924/13055 , H01L2924/1426 , H01L2924/15787 , H01L2924/1579
摘要： A semiconductor device includes: a metal sheet; an insulating pattern provided on the metal sheet; a power circuit pattern and a signal circuit pattern that are provided on the insulating pattern; a power semiconductor chip mounted on the power circuit pattern; and a control semiconductor chip that is mounted on the signal circuit pattern and controls the power semiconductor chip. The power semiconductor chip is bonded to the power circuit pattern with a first die bonding material comprised of copper, and the control semiconductor chip is bonded to the signal circuit pattern with a second die bonding material.
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公开(公告)号：US12080621B2
公开(公告)日：2024-09-03
申请号：US17460962
申请日：2021-08-30
发明人： Yoshiaki Takewaki , Keita Motoyama
IPC分类号： H01L23/00 , H01L21/48 , H01L23/373
CPC分类号： H01L23/3735 , H01L21/4807 , H01L24/32 , H01L24/48 , H01L24/73 , H01L2224/32225 , H01L2224/48225 , H01L2224/73265
摘要： Provided is a semiconductor device capable of suppressing misalignment of a brazing material when bonding a metal terminal to a metal circuit pattern. The semiconductor device includes an insulating substrate with a metal circuit pattern formed in a surface thereof and a metal terminal bonded onto the metal circuit pattern via a hard brazing material, in which protrusions are provided on the metal circuit pattern, and the protrusions are in contact with the hard brazing material.
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公开(公告)号：US12074150B2
公开(公告)日：2024-08-27
申请号：US18325829
申请日：2023-05-30
发明人： David Michael Rhodes , Yifeng Wu , Sung Hae Yea , Primit Parikh
IPC分类号： H01L25/00 , H01L23/14 , H01L23/31 , H01L23/373 , H01L25/16 , H01L27/088 , H03K17/687
CPC分类号： H01L25/16 , H01L23/142 , H01L23/3107 , H01L23/3735 , H01L27/0883 , H03K17/6871 , H03K2217/0063 , H03K2217/0072
摘要： An electronic module for a half-bridge circuit includes a base substrate with an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates first, second, and third portions of the first metal layer from one another. A high-side switch includes an enhancement-mode transistor and a depletion-mode transistor. The depletion-mode transistor includes a III-N material structure on an electrically conductive substrate. A drain electrode of the depletion-mode transistor is connected to the first portion, a source electrode of the enhancement-mode transistor is connected to the second portion, a drain electrode of the enhancement-mode transistor is connected to a source electrode of the depletion-mode transistor, a gate electrode of the depletion-mode transistor is connected to the electrically conductive substrate, and the electrically conductive substrate is connected to the second portion.
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公开(公告)号：US12074099B2
公开(公告)日：2024-08-27
申请号：US17737564
申请日：2022-05-05
申请人： Materion Corporation
IPC分类号： H01L23/495 , H01L21/48 , H01L23/373 , H01L23/66
CPC分类号： H01L23/49568 , H01L21/4828 , H01L21/4842 , H01L23/3732 , H01L23/49558 , H01L23/49562 , H01L23/49582 , H01L23/49586 , H01L23/66 , H01L2223/6616 , H01L2223/6683
摘要： A microelectronics package assembly and process of making same are disclosed. The flange has an upper surface and a first coating disposed on the upper surface of the flange. The insulator has a bottom surface for mounting onto the flange and an upper surface opposite the bottom surface. A second coating is disposed on the bottom surface of the insulator and a third coating disposed on the upper surface of the insulator. The first coating, the second coating, and the third coating each have a thickness of less than or equal to 1 micron. At least one of the first coating, the second coating, and the third coating is applied via at least one of physical vapor deposition, atomic deposition, or chemical deposition.
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公开(公告)号：US12074084B2
公开(公告)日：2024-08-27
申请号：US18304563
申请日：2023-04-21
IPC分类号： H01L23/52 , H01L21/48 , H01L23/367 , H01L23/373 , H01L23/48 , H01L23/522
CPC分类号： H01L23/3677 , H01L21/4871 , H01L23/373 , H01L23/481 , H01L23/5226
摘要： Various embodiments of the present disclosure are directed towards a semiconductor structure including a device layer having a front-side surface opposite a back-side surface. A first heat dispersion layer is disposed along the back-side surface of the device layer. A second heat dispersion layer underlies the front-side surface of the device layer. The second heat dispersion layer has a thermal conductivity lower than a thermal conductivity of the first heat dispersion layer.
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公开(公告)号：US12068741B2
公开(公告)日：2024-08-20
申请号：US18306713
申请日：2023-04-25
申请人： ROHM CO., LTD.
发明人： Masashi Hayashiguchi , Kazuhide Ino
IPC分类号： H02H3/00 , G01R19/00 , H01L23/00 , H01L23/31 , H01L23/373 , H01L25/07 , H01L25/18 , H02H3/20 , H02H9/04 , H02M7/5387 , H03K17/081 , H03K17/082 , H03K17/12 , H02M1/00
CPC分类号： H03K17/08104 , G01R19/0092 , H01L23/3107 , H01L23/3735 , H01L24/40 , H01L24/49 , H01L24/73 , H01L25/072 , H01L25/18 , H02H3/202 , H02H9/046 , H02M7/5387 , H03K17/0822 , H03K17/122 , H01L24/33 , H01L24/37 , H01L24/48 , H01L2224/0603 , H01L2224/291 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/40095 , H01L2224/40225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/48247 , H01L2224/4903 , H01L2224/49111 , H01L2224/49175 , H01L2224/73221 , H01L2224/73263 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/10272 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H01L2924/19107 , H02M1/0009 , H03K2217/0027 , Y02B70/10 , H01L2224/48091 , H01L2924/00014 , H01L2924/13055 , H01L2924/00 , H01L2224/73265 , H01L2224/32225 , H01L2224/48227 , H01L2924/00012 , H01L2224/291 , H01L2924/014 , H01L2224/73265 , H01L2224/32245 , H01L2224/48247 , H01L2924/00 , H01L2224/49175 , H01L2224/48227 , H01L2924/00 , H01L2224/49175 , H01L2224/48247 , H01L2924/00 , H01L2924/13091 , H01L2924/00 , H01L2224/49111 , H01L2224/48247 , H01L2924/00 , H01L2924/00014 , H01L2224/45099 , H01L2924/00014 , H01L2224/45015 , H01L2924/207 , H01L2924/181 , H01L2924/00012 , H01L2224/84801 , H01L2924/00014 , H01L2224/83801 , H01L2924/00014
摘要： A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.
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公开(公告)号：US12068213B2
公开(公告)日：2024-08-20
申请号：US17531867
申请日：2021-11-22
发明人： Thai Kee Gan , Sanjay Kumar Murugan , Ralf Otremba
IPC分类号： H01L23/31 , H01L21/56 , H01L23/00 , H01L23/29 , H01L23/373 , H01L23/495
CPC分类号： H01L23/3135 , H01L21/561 , H01L21/565 , H01L23/296 , H01L23/3121 , H01L23/373 , H01L23/4951 , H01L23/49524 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/84 , H01L2224/3702
摘要： A chip package including a semiconductor chip is provided. The chip package may include a packaging material at least partially around the semiconductor chip with an opening extending from a top surface of the packaging material to the semiconductor chip and/or to an electrical contact structure contacting the semiconductor chip, and a thermally conductive material in the opening, wherein the thermally conductive material is configured to transfer heat from the semiconductor chip to an outside, wherein the thermally conductive material extends laterally at least partially over the top surface of the packaging material.
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公开(公告)号：US20240274539A1
公开(公告)日：2024-08-15
申请号：US18644231
申请日：2024-04-24
发明人： Yu-Yun PENG , Keng-Chu LIN
IPC分类号： H01L23/535 , H01L21/768 , H01L23/373 , H01L23/528 , H01L23/532
CPC分类号： H01L23/535 , H01L21/76805 , H01L21/76895 , H01L23/3736 , H01L23/5283 , H01L23/53228
摘要： An interconnect structure, along with methods of forming such, are described. In some embodiments, the structure includes a first dielectric layer disposed over one or more devices, a first conductive feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first conductive feature, and a second conductive feature disposed in the second dielectric layer. The second conductive feature is electrically connected to the first conductive feature. The structure further includes a heat dissipation layer disposed between the first and second dielectric layers, and the heat dissipation layer partially surrounds the second conductive feature and is electrically isolated from the first and second conductive features.
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公开(公告)号：US20240274499A1
公开(公告)日：2024-08-15
申请号：US18643144
申请日：2024-04-23
发明人： Ae-Nee JANG , In Hyo HWANG
IPC分类号： H01L23/373 , H01L23/00 , H01L23/367 , H01L23/498 , H01L25/065 , H01L25/10
CPC分类号： H01L23/3735 , H01L23/367 , H01L23/49816 , H01L23/49822 , H01L23/49833 , H01L23/49838 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/0655 , H01L25/105 , H01L2224/16227 , H01L2224/16237 , H01L2224/32225 , H01L2224/73204 , H01L2225/1023 , H01L2225/1058 , H01L2225/107 , H01L2225/1094 , H01L2924/1431 , H01L2924/1434 , H01L2924/3511 , H01L2924/3512
摘要： Provided is a semiconductor package including a stiffener. The semiconductor package comprises a circuit board, a semiconductor chip on the circuit board, and a stiffener around the semiconductor chip, wherein the stiffener includes a first metal layer, a core layer, and a second metal layer sequentially stacked.
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