摘要:
Provided are embodiments of semiconductor chips having a redistributed metal interconnection directly connected to power/ground lines of an internal circuit are provided. Embodiments of the semiconductor chips include an internal circuit formed on a semiconductor substrate. A chip pad is disposed on the semiconductor substrate. The chip pad is electrically connected to the internal circuit through an internal interconnection. A passivation layer is provided over the chip pad. A redistributed metal interconnection is provided on the passivation layer. The redistributed metal interconnection directly connects the internal interconnection to the chip pad through a via-hole and a chip pad opening, which penetrate at least the passivation layer. Methods of fabricating the semiconductor chip are also provided.
摘要:
Provided are a stack chip and a stack chip package having the stack chip. Internal circuits of two semiconductor chips are electrically connected to each other through an input/output buffer connected to an external connection terminal. The semiconductor chip has chip pads, input/output buffers and internal circuits connected through circuit wirings. The semiconductor chip also has connection pads connected to the circuit wirings connecting the input/output buffers to the internal circuits. The semiconductor chips include a first chip and a second chip. The connection pads of the first chip are electrically connected to the connection pads of the second chip through electrical connection means. Input signals input through the external connection terminals are input to the internal circuits of the first chip or the second chip via the chip pads and the input/output buffers of the first chip, and the connection pads of the first chip and the second chip.
摘要:
A semiconductor device package includes a substrate, first and second chip pads spaced apart over a surface of the substrate, and an insulating layer located over the surface of the substrate. The insulating layer includes a stepped upper surface defined by at least a lower reference potential line support surface portion, and an upper signal line support surface portion, where a thickness of the insulating layer at the lower reference potential line support surface portion is less than a thickness of the insulating layer at the upper signal line support surface portion. The package further includes a conductive reference potential line electrically connected to the first chip pad and located on the lower reference potential support surface portion of the insulating layer, a conductive signal line electrically connected to the second chip pad and located on the upper signal line support surface portion, and first and second external terminals electrically connected to the conductive reference potential line and the conductive signal line, respectively.
摘要:
A semiconductor package which can be stacked to form a package stack that includes a semiconductor chip with bonding pads, a board having contact pads on its upper surface and bump pads on its lower surface, a heat spreader attached to the rear side of the semiconductor chip and covering the upper surface of the board, and external contact terminals including ground terminals and signal terminals formed on the bump pads. The contact pads of the board include ground contact pads connected with the ground terminals and signal contact pads connected with the signal terminals. The heat spreader includes indented parts to expose the signal contact pads and protruded parts to cover the ground contact pads which are exposed through holes formed on the protruded parts on the peripheral part of the heat spreader. The semiconductor package can alternatively have the heat spreader attached to the lower surface of the board.
摘要:
A unit semiconductor chip package may includes a semiconductor chip, a first series of bonding pads in a first area, a second series of bonding pads in a second area, a plurality of bonding fingers provided on a substrate and a plurality of bonding wires. Each of the first series of bonding pads may be electrically connected to a corresponding one of the plurality of bonding fingers by one bonding wire and each of the second series of bonding pad may be electrically connected to one of the plurality of bonding fingers by at least two bonding wires or the plurality of bonding wires electrically connecting the first series of bonding pads may be longer and the plurality of bonding wires electrically connecting the second series of bonding pads may be longer or shorter.
摘要:
A package stack has at least two packages of area array types (AAT), each having connecting pads. A flexible cable having conductive patterns is provided between the AAT packages and electrically connected to the connecting pads of the packages.
摘要:
A package-on-package (PoP)-type package includes a first semiconductor package having a first passive element and a first semiconductor device mounted on a first substrate, and a second semiconductor package having a second semiconductor device mounted on a second substrate. The first passive element is electrically connected to the second semiconductor device. Related devices are also discussed.
摘要:
A semiconductor package, comprising: a substrate; a first semiconductor chip; and at least one second semiconductor chip. The first semiconductor chip and the at least one second semiconductor chip are stacked on the substrate; the first semiconductor chip is electrically connected with the substrate; and an electrical connection of each second semiconductor chip is formed through a secondary input/output buffer of the first semiconductor chip.
摘要:
A semiconductor chip including a chip via plug penetrating a substrate, a semiconductor stack thereof, a semiconductor device package thereof, and an electronic apparatus having the same are disclosed. The semiconductor chip comprising, a substrate including an inner semiconductor circuit, a conductive redistribution structure formed on the substrate including a conductive redistribution interconnection and a conductive redistribution via plug, wherein the redistribution via plug is connected to the inner semiconductor circuit; a conductive chip pad formed on the substrate, and a conductive chip via plug configured to penetrate the substrate and electrically connected to the redistribution structure.
摘要:
Provided are a planar multi semiconductor chip package in which a processor and a memory device are connected to each other via a through electrode and a method of manufacturing the planar multi semiconductor chip package. The planar multi semiconductor chip package includes: a substrate comprising a plurality of first circuit patterns on a first surface and a plurality of second circuit patterns on a second surface; a first semiconductor chip comprising a plurality of memory devices arranged on the substrate, wherein first memory devices surround at least a portion of second memory devices; a second semiconductor chip stacked on the first semiconductor chip and corresponding to the second memory devices; and a plurality of through electrodes arranged on the second memory devices and connecting the first and second semiconductor chips to the second circuit pattern of the substrate.