GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE
    32.
    发明申请
    GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE 审中-公开
    基于III类氮化物的量子阱发光器件结构与包含封装结构的印刷

    公开(公告)号:US20130341593A1

    公开(公告)日:2013-12-26

    申请号:US14015466

    申请日:2013-08-30

    Applicant: CREE, INC.

    Abstract: Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

    Abstract translation: 提供III族氮化物基发光器件和制造III族氮化物基发光器件的方法。 发光器件包括n型III族氮化物层,n型III族氮化物层上的III族氮化物基有源区,并且包括至少一个量子阱结构,在有源区上包括铟的III族氮化物层, 在包括铟的III族氮化物层上包括铝的p型III族氮化物层,n型III族氮化物层上的第一接触和p型III族氮化物层上的第二接触。 包括铟的III族氮化物层也可以包括铝。

    LED BASED CANDELABRA LAMP
    39.
    发明申请
    LED BASED CANDELABRA LAMP 有权
    LED基于CANDELABRA灯

    公开(公告)号:US20160161062A1

    公开(公告)日:2016-06-09

    申请号:US14564228

    申请日:2014-12-09

    Applicant: Cree, Inc.

    Abstract: A LED lamp has a non-optically transmissive base connected to an optically transmissive enclosure. A LED assembly emits light when energized through an electrical path from the base. A portion of the heat sink and lamp electronics extend from the base and into the enclosure such that at least an upper portion of the heat sink extends into the interior volume defined by the enclosure. The LED assembly is supported on top of the heat sink such that the LEDs are disposed in the volume of the enclosure. An optic element extends over the LEDs and at least the portion of the heat sink. The size of the non-optically transmissive base of the lamp is reduced relative to the optically transmissive enclosure such that a greater ratio of optically transmissive view space to non-optically transmissive base is provided.

    Abstract translation: LED灯具有连接到光学透射外壳的非光学透射基座。 当通过电路从基座通电时,LED组件发光。 散热器和灯电子器件的一部分从基座延伸到外壳中,使得散热片的至少上部延伸到由外壳限定的内部空间中。 LED组件支撑在散热器的顶部,使得LED布置在外壳的体积中。 光学元件在LED和至少散热器的部分上延伸。 灯的非光学透射基底的尺寸相对于光学透射外壳减小,使得提供更大比例的光学透射视野空间与非光学透射基底。

    High voltage monolithic LED chip
    40.
    发明授权

    公开(公告)号:US10115860B2

    公开(公告)日:2018-10-30

    申请号:US15647823

    申请日:2017-07-12

    Applicant: Cree, Inc.

    Abstract: Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.

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