Abstract:
Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.
Abstract:
An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.
Abstract:
A LED lamp has at least two LEDs to provide light of at least two different spectral outputs. An optic element has an entry surface disposed to receive the light from the LEDs. The entry surface includes refracting surfaces that refract the light tangentially. The refracting surfaces may extend radially relative to a center of the entry surface. The refracting surfaces may be continuously curved in cross-section where the refracting surfaces may include convex refracting surfaces and concave refracting surfaces.
Abstract:
A lamp includes an optically transmissive enclosure for emitting an emitted light and a base connected to the enclosure. At least one first LED filament and at least one second LED filament are located in the enclosure and are operable to emit light when energized through an electrical path from the base. The first LED filament emits light having a first correlated color temperature (CCT) and the second LED filament emits light having a second CCT that are combined to generate the emitted light. A controller operates to change the CCT of the emitted light when the lamp is dimmed.
Abstract:
Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.
Abstract:
Flip chip LEDs incorporate multi-layer reflectors and light transmissive substrates patterned along an internal surface adjacent to semiconductor layers. A multi-layer reflector may include a metal layer and a dielectric layer containing conductive vias. Portions of a multi-layer reflector may wrap around a LED mesa including an active region, while being covered with passivation material. A substrate patterned along an internal surface together with a multi-layer reflector enables reduction of optical losses. A light transmissive fillet material proximate to edge emitting surfaces of an emitter chip may enable adequate coverage with lumiphoric material. An emitter chip may be elevated with increased thickness of solder material and/or contacts, and may reduce luminous flux loss when reflective materials are present on a submount. Methods for coating emitter chips with lumiphoric material include one or more of angled spray coating, fillet formation prior to spray coating, stencil island coating, and releasable tape coating.
Abstract:
A LED lamp has a non-optically transmissive base connected to an optically transmissive enclosure. A LED assembly emits light when energized through an electrical path from the base. A portion of the heat sink and lamp electronics extend from the base and into the enclosure such that at least an upper portion of the heat sink extends into the interior volume defined by the enclosure. The LED assembly is supported on top of the heat sink such that the LEDs are disposed in the volume of the enclosure. An optic element extends over the LEDs and at least the portion of the heat sink. The size of the non-optically transmissive base of the lamp is reduced relative to the optically transmissive enclosure such that a greater ratio of optically transmissive view space to non-optically transmissive base is provided.
Abstract:
Monolithic LED chips are disclosed comprising a plurality of active regions on submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament.