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    SELECTIVE COPPER ENCAPSULATION LAYER DEPOSITION
    31.
    发明申请
    SELECTIVE COPPER ENCAPSULATION LAYER DEPOSITION 有权
    选择铜包层沉积

    公开(公告)号：US20110162875A1

    公开(公告)日：2011-07-07

    申请号：US12683857

    申请日：2010-01-07

    申请人： Tien-Jen Cheng ,  Abhishek Dube ,  Zhengwen Li ,  Huilong Zhu

    发明人： Tien-Jen Cheng ,  Abhishek Dube ,  Zhengwen Li ,  Huilong Zhu

    IPC分类号： H05K1/09 ,  B05D5/12

    CPC分类号： H01L21/76834 ,  H01L21/76826 ,  H01L21/76832 ,  H05K3/282 ,  H05K3/388 ,  H05K3/4682

    摘要： A metal interconnect structure provides high adhesive strength between copper atoms in a copper-containing structure and a self-aligned copper encapsulation layer, which is selectively deposited only on exposed copper surfaces. A lower level metal interconnect structure comprises a first dielectric material layer and a copper-containing structure embedded in a lower metallic liner. After a planarization process that forms the copper-containing structure, a material that forms Cu—S bonds with exposed surfaces of the copper-containing structure is applied to the surface of the copper-containing structure. The material is selectively deposited only on exposed Cu surfaces, thereby forming a self-aligned copper encapsulation layer, and provides a high adhesion strength to the copper surface underneath. A dielectric cap layer and an upper level metal interconnect structure can be subsequently formed on the copper encapsulation layer.

    摘要翻译： 金属互连结构在含铜结构中的铜原子和自对准铜封装层之间提供高粘合强度，其仅选择性地沉积在暴露的铜表面上。 下层金属互连结构包括第一介电材料层和嵌入在下金属衬里中的含铜结构。 在形成含铜结构的平坦化工艺之后，将含铜结构体的露出表面形成Cu-S键的材料施加到含铜结构体的表面。 该材料仅选择性地沉积在暴露的Cu表面上，从而形成自对准的铜封装层，并且对下面的铜表面提供高粘附强度。 随后可以在铜封装层上形成电介质盖层和上层金属互连结构。

    Method and apparatus for controlling local current to achieve uniform plating thickness
    36.
    发明授权
    Method and apparatus for controlling local current to achieve uniform plating thickness 失效
    用于控制局部电流以实现均匀电镀厚度的方法和装置

    公开(公告)号：US06890413B2

    公开(公告)日：2005-05-10

    申请号：US10318607

    申请日：2002-12-11

    申请人： Tien-Jen Cheng ,  Todd M. Fowler ,  Ajay P. Giri ,  Anton Nenadic ,  Blessen Samuel ,  Keith Kwong Hon Wong

    发明人： Tien-Jen Cheng ,  Todd M. Fowler ,  Ajay P. Giri ,  Anton Nenadic ,  Blessen Samuel ,  Keith Kwong Hon Wong

    IPC分类号： C25D7/12 ,  C25D5/00 ,  C25D5/02 ,  C25D17/10 ,  C25D17/12 ,  C25D21/12 ,  H01L21/288 ,  H05K3/24

    CPC分类号： H01L21/2885 ,  C25D5/02 ,  C25D17/001 ,  C25D17/007 ,  C25D17/10 ,  C25D17/12 ,  H05K3/241

    摘要： A process for electroplating metallic features of different density on a surface of a substrate comprises providing an electroplating bath having an anode, immersing the substrate into the electroplating bath, spaced from the anode, the substrate comprising a cathode. Positioned in the electroplating bath between the substrate and the anode, and adjacent to and separated from the substrate surface is a second cathode that includes a wire mesh screening portion having openings of different sizes conforming to the metallic features to be electroplated. The second cathode screening portion has openings of larger size adjacent areas of higher density of features to be electroplated and openings of smaller size adjacent areas of lower density of features to be electroplated. The process further includes impressing a current through the electroplating bath between the substrate and the anode, and between the second cathode and the anode, and electroplating the metallic features of different density onto the substrate.

    摘要翻译： 一种用于在基片表面上电镀不同密度的金属特征的方法包括提供具有阳极的电镀浴，将基底浸入与阳极间隔开的电镀浴中，该基底包括阴极。 位于基板和阳极之间并且与基板表面相邻并与基板表面分离的电镀槽中的电镀槽是包括具有与要电镀的金属特征相符的不同尺寸的开口的金属丝网筛分部分的第二阴极。 第二阴极屏蔽部分具有较大尺寸的具有更高密度特征的相邻区域的开口，以进行电镀，并且要电镀较低密度特征的较小尺寸的相邻区域的开口。 该方法进一步包括通过电镀浴在基板和阳极之间以及在第二阴极和阳极之间施加电流，并将不同密度的金属特征电镀到基板上。

    Selective copper encapsulation layer deposition
    38.
    发明授权
    Selective copper encapsulation layer deposition 有权
    选择性铜包层沉积

    公开(公告)号：US08415252B2

    公开(公告)日：2013-04-09

    申请号：US12683857

    申请日：2010-01-07

    申请人： Tien-Jen Cheng ,  Abhishek Dube ,  Zhengwen Li ,  Huilong Zhu

    发明人： Tien-Jen Cheng ,  Abhishek Dube ,  Zhengwen Li ,  Huilong Zhu

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76834 ,  H01L21/76826 ,  H01L21/76832 ,  H05K3/282 ,  H05K3/388 ,  H05K3/4682

    摘要： A metal interconnect structure provides high adhesive strength between copper atoms in a copper-containing structure and a self-aligned copper encapsulation layer, which is selectively deposited only on exposed copper surfaces. A lower level metal interconnect structure comprises a first dielectric material layer and a copper-containing structure embedded in a lower metallic liner. After a planarization process that forms the copper-containing structure, a material that forms Cu—S bonds with exposed surfaces of the copper-containing structure is applied to the surface of the copper-containing structure. The material is selectively deposited only on exposed Cu surfaces, thereby forming a self-aligned copper encapsulation layer, and provides a high adhesion strength to the copper surface underneath. A dielectric cap layer and an upper level metal interconnect structure can be subsequently formed on the copper encapsulation layer.

    摘要翻译： 金属互连结构在含铜结构中的铜原子和自对准铜封装层之间提供高粘合强度，其仅选择性地沉积在暴露的铜表面上。 下层金属互连结构包括第一介电材料层和嵌入在下金属衬里中的含铜结构。 在形成含铜结构的平坦化工艺之后，将含铜结构体的露出表面形成Cu-S键的材料施加到含铜结构体的表面。 该材料仅选择性地沉积在暴露的Cu表面上，从而形成自对准的铜封装层，并且对下面的铜表面提供高粘附强度。 随后可以在铜封装层上形成电介质盖层和上层金属互连结构。