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    Methods for forming resistive switching memory elements
    31.
    发明授权
    Methods for forming resistive switching memory elements 有权
    形成电阻式开关存储元件的方法

    公开(公告)号：US09178145B2

    公开(公告)日：2015-11-03

    申请号：US14264475

    申请日：2014-04-29

    Applicant: Intermolecular Inc.

    Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Zhi-Wen Wen Sun ,  Jinhong Tong

    IPC: H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1633

    Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

    Abstract translation: 提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。 电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。 诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。 无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。 可以沉积多层导电材料，每层具有不同的氧化速率。 可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

    Method and system of improved uniformity testing
    34.
    发明授权
    Method and system of improved uniformity testing 有权
    改进均匀性测试的方法和系统

    公开(公告)号：US09105563B2

    公开(公告)日：2015-08-11

    申请号：US13713421

    申请日：2012-12-13

    Applicant: Intermolecular, Inc.

    Inventor： Charlene Chen ,  Tony P. Chiang ,  Chi-I Lang ,  Yun Wang

    IPC: G01N21/59 ,  H01L21/66 ,  H01L29/16 ,  H01L21/02

    CPC classification number: H01L22/20 ,  G01N21/59 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L22/12 ,  H01L29/1606

    Abstract: A method and system includes a first substrate and a second substrate, each substrate comprising a predetermined baseline transmittance value at a predetermine wavelength of light, processing regions on the first substrate by combinatorially varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production, performing a first characterization test on the processed regions on the first substrate to generate first results, processing regions on a second substrate in a combinatorial manner by varying at least one of materials, process conditions, unit processes, and process sequences associated with the graphene production based on the first results of the first characterization test, performing a second characterization test on the processed regions on the second substrate to generate second results, and determining whether at least one of the first substrate and the second substrate meet a predetermined quality threshold based on the second results.

    Abstract translation: 一种方法和系统包括第一衬底和第二衬底，每个衬底在光的预定波长处包括预定的基线透射率值，第一衬底上的处理区域通过组合地改变材料，工艺条件，单元工艺中的至少一个和 与所述石墨烯生产相关联的工艺序列，对所述第一衬底上的所述经处理区域执行第一表征测试以产生第一结果，通过改变材料，工艺条件，单位过程中的至少一种以组合方式处理第二衬底上的区域， 以及基于第一表征测试的第一结果与石墨烯生产相关联的处理顺序，对第二衬底上的经处理区域执行第二表征测试以产生第二结果，以及确定第一衬底和第二衬底中的至少一个 基板满足预定的质量阈值 基于第二个结果。

    One-Way Valves for Controlling Flow into Deposition Chamber
    35.
    发明申请
    One-Way Valves for Controlling Flow into Deposition Chamber 有权
    用于控制流入沉积室的单向阀

    公开(公告)号：US20150170908A1

    公开(公告)日：2015-06-18

    申请号：US14109622

    申请日：2013-12-17

    Applicant: Intermolecular Inc.

    Inventor： Chien-Lan Hsueh ,  Chen-An Chen ,  Tony P. Chiang ,  Martin Romero ,  James Tsung

    IPC: H01L21/02 ,  H01L21/67

    CPC classification number: H01L21/02271 ,  C23C16/45548 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574

    Abstract: Provided are apparatus for high productivity combinatorial (HPC) processing of semiconductor substrates and HPC methods. An apparatus includes a showerhead and two or more self-controlled one-way valves connected to the showerhead and used for controlling flow of different processing gases into the showerhead. The self-controlled one-way valves are not externally controlled by any control systems. Instead, these valves open and close in response to preset conditions, such as pressure differentials and/or flow differentials. One example of such self-controlled one-way valves is a check valve. These valves generally allow the flow only in one direction, i.e., into the showerhead. Furthermore, lack of external controls and specific mechanical designs allow positioning these self-controlled one-way valves in close proximity to the showerhead thereby reducing the dead volume between the valves and the showerhead and also operating these valves at high temperatures.

    Abstract translation: 提供了用于半导体衬底和HPC方法的高生产率组合（HPC）处理的装置。 一种装置包括一个淋浴喷头和两个或多个连接到喷头的自控单向阀，用于控制不同处理气体进入喷头的流量。 自控单向阀不受任何控制系统的外部控制。 相反，这些阀响应预设条件（例如压力差和/或流量差）打开和关闭。 这种自控单向阀的一个例子是止回阀。 这些阀通常仅在一个方向上流动，即进入喷头。 此外，缺乏外部控制和特定的机械设计允许将这些自我控制的单向阀定位在靠近喷淋头的位置，从而减小了阀和喷头之间的死体积并且还在高温下操作这些阀。

    Nonvolatile memory elements
    37.
    发明授权
    Nonvolatile memory elements 有权
    非易失性存储元件

    公开(公告)号：US09029232B2

    公开(公告)日：2015-05-12

    申请号：US14281550

    申请日：2014-05-19

    Applicant: Intermolecular Inc.

    Inventor： Sandra G Malhotra ,  Sean Barstow ,  Tony P. Chiang ,  Wayne R French ,  Pragati Kumar ,  Prashant B Phatak ,  Sunil Shanker ,  Wen Wu

    IPC: H01L21/02 ,  H01L45/00 ,  H01L27/24

    CPC classification number: H01L45/1608 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641

    Abstract: Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.

    Abstract translation: 提供了基于电阻式开关存储元件层的非易失性存储元件。 非易失性存储元件可以具有电阻性开关金属氧化物层。 电阻式开关金属氧化物层可以具有一层或多层氧化物。 电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。 可以形成层以增强非易失性存储元件的热稳定性。 用于非易失性存储元件的电极可以包含导电层和缓冲层。

    Resistive-switching memory elements having improved switching characteristics
    38.
    发明授权
    Resistive-switching memory elements having improved switching characteristics 有权
    具有改进的开关特性的电阻式开关存储元件

    公开(公告)号：US09012881B2

    公开(公告)日：2015-04-21

    申请号：US14255749

    申请日：2014-04-17

    Applicant: Intermolecular, Inc.

    Inventor： Ronald J. Kuse ,  Tony P. Chiang ,  Imran Hashim

    IPC: H01L45/00 ,  H01L27/01 ,  H01L27/24

    CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/145 ,  H01L45/1616 ,  H01L45/1641

    Abstract: Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness.

    Abstract translation: 描述了具有改进的开关特性的电阻式开关存储元件，包括具有第一电极和第二电极的存储元件，第一电极和第二电极之间的开关层，包括氧化铪并具有第一厚度，以及耦合层， 所述开关层和所述第二电极，所述耦合层包括包含金属钛并且具有小于所述第一厚度的25％的第二厚度的材料。

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