公开(公告)号：US20200093008A1

公开(公告)日：2020-03-19

申请号：US16692915

申请日：2019-11-22

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen ,  Cyprian Emeka Uzoh

IPC: H05K3/40 ,  H01L23/00 ,  H05K1/11 ,  H05K3/34

Abstract: A contact pad includes a solder-wettable porous network (310) which wicks the molten solder (130) and thus restricts the lateral spread of the solder, thus preventing solder bridging between adjacent contact pads.

公开(公告)号：US10531574B2

公开(公告)日：2020-01-07

申请号：US15858791

申请日：2017-12-29

Applicant: INVENSAS CORPORATION

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen ,  Cyprian Emeka Uzoh

IPC: H05K1/11 ,  H01L23/00 ,  H05K3/40 ,  H05K3/34

Abstract: A contact pad includes a solder-wettable porous network (310) which wicks the molten solder (130) and thus restricts the lateral spread of the solder, thus preventing solder bridging between adjacent contact pads.

公开(公告)号：US20190157199A1

公开(公告)日：2019-05-23

申请号：US16238786

申请日：2019-01-03

Applicant: Invensas Corporation

Inventor： Cyprian Emeka UZOH ,  Charles G. WOYCHIK ,  Arkalgud R. SITARAM ,  Hong Shen ,  Zhuowen SUN ,  Liang WANG ,  Guilian GAO

IPC: H01L23/522 ,  H01L21/768 ,  H01L21/8234 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/823431 ,  H01L21/823475 ,  H01L23/5226 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a microelectronic component having conductive vias (114) passing through a substrate (104) and protruding above the substrate, one or more conductive features (120E.A, 120E.B, or both) are provided above the substrate that wrap around the conductive vias' protrusions (114′) to form capacitors, electromagnetic shields, and possibly other elements. Other features and embodiments are also provided.

公开(公告)号：US20190098271A1

公开(公告)日：2019-03-28

申请号：US16206549

申请日：2018-11-30

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Guilian Gao ,  Arkalgud R. Sitaram

IPC: H04N9/43 ,  H01L27/146 ,  H04N9/76 ,  H04N5/33 ,  H04N9/04 ,  H04N9/097 ,  G02B27/10 ,  G06T1/20 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032 ,  H04N5/374

Abstract: HD color video using monochromatic CMOS image sensors integrated in a 3D package is provided. An example 3DIC package for color video includes a beam splitter to partition received light of an image stream into multiple light outputs. Multiple monochromatic CMOS image sensors are each coupled to one of the multiple light outputs to sense a monochromatic image stream at a respective component wavelength of the received light. Each monochromatic CMOS image sensor is specially constructed, doped, controlled, and tuned to its respective wavelength of light. A parallel processing integrator or interposer chip heterogeneously combines the respective monochromatic image streams into a full-spectrum color video stream, including parallel processing of an infrared or ultraviolet stream. The parallel processing of the monochromatic image streams provides reconstruction to HD or 4K HD color video at low light levels. Parallel processing to one interposer chip also enhances speed, spatial resolution, sensitivity, low light performance, and color reconstruction.

公开(公告)号：US09905523B2

公开(公告)日：2018-02-27

申请号：US15203013

申请日：2016-07-06

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Arkalgud R. Sitaram

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/532 ,  H01L25/065 ,  H01L23/14 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L24/09 ,  H01L21/486 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5226 ,  H01L23/53209 ,  H01L24/89 ,  H01L25/0652 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/08168 ,  H01L2224/08501 ,  H01L2224/73204 ,  H01L2224/80487 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/05442 ,  H01L2924/1304 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/3511

Abstract: Two microelectronic components (110, 120), e.g. a die and an interposer, are bonded to each other. One of the components' contact pads (110C) include metal, and the other component has silicon (410) which reacts with the metal to form metal silicide (504). Then a hole (510) is made through one of the components to reach the metal silicide and possibly even the unreacted metal (110C) of the other component. The hole is filled with a conductor (130), possibly metal, to provide a conductive via that can be electrically coupled to contact pads (120C.B) attachable to other circuit elements or microelectronic components, e.g. to a printed circuit board.

公开(公告)号：US20170309518A1

公开(公告)日：2017-10-26

申请号：US15649457

申请日：2017-07-13

Applicant: Invensas Corporation

Inventor： Cyprian Emeka Uzoh ,  Guilian Gao ,  Liang Wang ,  Hong Shen ,  Arkalgud R. Sitaram

IPC: H01L21/82 ,  H01L21/56 ,  H01L23/538 ,  H01L23/00 ,  H01L21/48 ,  H01L23/31

Abstract: A device and method of forming the device that includes cavities formed in a substrate of a substrate device, the substrate device also including conductive vias formed in the substrate. Chip devices, wafers, and other substrate devices can be mounted to the substrate device. Encapsulation layers and materials may be formed over the substrate device in order to fill the cavities.

公开(公告)号：US20170186730A1

公开(公告)日：2017-06-29

申请号：US15152469

申请日：2016-05-11

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Guilian Gao

IPC: H01L25/065 ,  H01L21/78 ,  H01L21/683 ,  H01L23/00 ,  H01L21/768 ,  H01L21/306 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L24/94 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31051 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/76877 ,  H01L21/76898 ,  H01L21/78 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/32145 ,  H01L2224/83005 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2225/06541 ,  H01L2924/10253 ,  H01L2924/1032 ,  H01L2924/1205 ,  H01L2924/1207 ,  H01L2924/1304 ,  H01L2924/1436

Abstract: Systems and methods for providing 3D wafer assembly with known-good-dies are provided. An example method compiles an index of dies on a semiconductor wafer and removes the defective dies to provide a wafer with dies that are all operational. Defective dies on multiple wafers may be removed in parallel, and resulting wafers with all good dies stacked in 3D wafer assembly. In an implementation, the spaces left by removed defective dies may be filled at least in part with operational dies or with a fill material. Defective dies may be replaced either before or after wafer-to-wafer assembly to eliminate production of defective stacked devices, or the spaces may be left empty. A bottom device wafer may also have its defective dies removed or replaced, resulting in wafer-to-wafer assembly that provides 3D stacks with no defective dies.

公开(公告)号：US09536862B2

公开(公告)日：2017-01-03

申请号：US14980996

申请日：2015-12-28

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Charles G. Woychik ,  Arkalgud R. Sitaram

IPC: H01L23/48 ,  H01L21/50 ,  H01L23/498 ,  H01L23/538 ,  H01L21/56 ,  H01L25/065 ,  H01L23/00 ,  H01L21/52 ,  H01L25/00

CPC classification number: H01L25/0652 ,  H01L21/52 ,  H01L21/561 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49844 ,  H01L23/5384 ,  H01L24/09 ,  H01L24/33 ,  H01L24/73 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L25/50 ,  H01L2224/08165 ,  H01L2224/08235 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/8182 ,  H01L2224/85205 ,  H01L2224/9202 ,  H01L2224/92125 ,  H01L2224/92224 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: Semiconductor integrated circuits (110) or assemblies are disposed at least partially in cavities between two interposers (120). Conductive vias (204M) pass through at least one of the interposers or at least through the interposer's substrate, and reach a semiconductor integrated circuit or an assembly. Other conductive vias (204M.1) pass at least partially through multiple interposers and are connected to conductive vias that reach, or are capacitively coupled to, a semiconductor IC or an assembly. Other features are also provided.

Abstract translation: 半导体集成电路（110）或组件至少部分地设置在两个插入件（120）之间的空腔中。 导电通孔（204M）通过至少一个插入件或至少穿过插入器的衬底，并到达半导体集成电路或组件。 其他导电通孔（204M.1）至少部分地通过多个插入件并且连接到到达或者电容耦合到半导体IC或组件的导电通孔。 还提供其他功能。

公开(公告)号：US20160365302A1

公开(公告)日：2016-12-15

申请号：US15248726

申请日：2016-08-26

Applicant: Invensas Corporation

Inventor： Liang Wang ,  Rajesh Katkar ,  Hong Shen ,  Cyprian Emeka Uzoh ,  Belgacem Haba

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/04

CPC classification number: H01L23/498 ,  H01L21/4846 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/56 ,  H01L21/563 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/04 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/3675 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/16113 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81192 ,  H01L2224/97 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2225/1058 ,  H01L2924/1427 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/19041 ,  H01L2924/19102 ,  H01L2224/81

Abstract: A method of making an assembly can include forming a circuit structure defining front and rear surfaces, and forming a substrate onto the rear surface. The forming of the circuit structure can include forming a first dielectric layer coupled to the carrier. The first dielectric layer can include front contacts configured for joining with contacts of one or more microelectronic elements, and first traces. The forming of the circuit structure can include forming rear conductive elements at the rear surface coupled with the front contacts through the first traces. The forming of the substrate can include forming a dielectric element directly on the rear surface. The dielectric element can have first conductive elements facing the rear conductive elements and joined thereto. The dielectric element can include second traces coupled with the first conductive elements. The forming of the substrate can include forming terminals at a surface of the substrate.

Abstract translation: 制造组件的方法可以包括形成限定前表面和后表面的电路结构，以及在后表面上形成衬底。 电路结构的形成可以包括形成耦合到载体的第一介电层。 第一电介质层可以包括构造成与一个或多个微电子元件的触点和第一迹线接合的前触点。 电路结构的形成可以包括通过第一迹线在与前触点耦合的后表面处形成后导电元件。 基板的形成可以包括直接在后表面上形成电介质元件。 电介质元件可以具有面向后导电元件并与其连接的第一导电元件。 电介质元件可以包括与第一导电元件耦合的第二迹线。 基板的形成可以包括在基板的表面上形成端子。

公开(公告)号：US09478504B1

公开(公告)日：2016-10-25

申请号：US14745237

申请日：2015-06-19

Applicant: Invensas Corporation

Inventor： Hong Shen ,  Liang Wang ,  Rajesh Katkar ,  Charles G. Woychik ,  Guilian Gao

IPC: H01L21/44 ,  H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H01L23/31 ,  H01L23/053 ,  H01L25/065

CPC classification number: H01L23/562 ,  H01L21/481 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/561 ,  H01L23/053 ,  H01L23/145 ,  H01L23/147 ,  H01L23/15 ,  H01L23/295 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/3675 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/5384 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/92 ,  H01L24/97 ,  H01L25/0655 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/13111 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/16153 ,  H01L2924/16235 ,  H01L2924/16251 ,  H01L2924/16315 ,  H01L2924/1632 ,  H01L2924/167 ,  H01L2924/16787 ,  H01L2924/16788 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/01029 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: Die (110) are attached to an interposer (420), and the interposer/die assembly is placed into a lid cavity (510). The lid (210) is attached to the top of the assembly, possibly to the encapsulant (474) at the top. The lid's legs (520) surround the cavity and extend down below the top surface of the interposer's substrate (420S), possibly to the level of the bottom surface of the substrate or lower. The legs (520) may or may not be attached to the interposer/die assembly. In fabrication, the interposer wafer (420SW) has trenches (478) which receive the lid's legs during the lid placement. The interposer wafer is later thinned to remove the interposer wafer portion below the legs and to dice the interposer wafer. The thinning process also exposes, on the bottom, conductive vias (450) passing through the interposer substrate. Other features are also provided.

Abstract translation: 模具（110）附接到插入件（420），并且插入器/模具组件被放置在盖腔（510）中。 盖（210）附接到组件的顶部，可能附接到顶部的密封剂（474）。 盖的腿（520）围绕空腔并且向下延伸到插入器的衬底（420S）的顶表面下方，可能地到衬底的底表面的高度或更低。 腿（520）可以或可以不附接到插入件/模具组件。 在制造中，插入器晶片（420SW）具有在盖放置期间接收盖的腿的沟槽（478）。 中间层晶片稍后变薄以去除腿下方的插入片晶片部分并且切割插入片晶片。 薄化工艺还在底部暴露穿过内插衬底的导电通孔（450）。 还提供其他功能。