公开(公告)号：US09196707B2

公开(公告)日：2015-11-24

申请号：US14073159

申请日：2013-11-06

申请人： International Business Machines Corporation

发明人： Michael P. Chudzik ,  Deleep R. Nair ,  Vijay Narayanan ,  Carl J. Radens ,  Jay M. Shah

IPC分类号： H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/51 ,  H01L21/28 ,  H01L21/283 ,  H01L29/78

CPC分类号： H01L29/66575 ,  H01L21/28017 ,  H01L21/283 ,  H01L21/823864 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/78

摘要： At least one layer including a scavenging material and a dielectric material is deposited over a gate stack, and is subsequently anisotropically etched to form a oxygen-scavenging-material-including gate spacer. The oxygen-scavenging-material-including gate spacer can be a scavenging-nanoparticle-including gate spacer or a scavenging-island-including gate spacer. The scavenging material is distributed within the oxygen-scavenging-material-including gate spacer in a manner that prevents an electrical short between a gate electrode and a semiconductor material underlying a gate dielectric. The scavenging material actively scavenges oxygen that diffuses toward the gate dielectric from above, or from the outside of, a dielectric gate spacer that can be formed around the oxygen-scavenging-material-including gate spacer.

摘要翻译： 包括清除材料和电介质材料的至少一层沉积在栅叠层上，随后进行各向异性蚀刻以形成含氧清除材料的栅间隔物。 含氧清除材料的栅极间隔物可以是包含清除纳米颗粒的栅极间隔物或含有扫气岛的栅极间隔物。 清除材料以防止栅极电极和栅极电介质下方的半导体材料之间的电短路的方式分布在含氧清除材料的栅极间隔物内。 清扫材料主动地清除从可以形成在含氧清除材料的栅极间隔物周围形成的介电栅极隔离物的上方或外部扩散到栅极电介质的氧。

公开(公告)号：US20150145062A1

公开(公告)日：2015-05-28

申请号：US14088462

申请日：2013-11-25

申请人： International Business Machines Corporation

发明人： Michael P. Chudzik ,  Siddarth A. Krishnan ,  Unoh Kwon

IPC分类号： H01L29/06 ,  H01L21/8238 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/28 ,  H01L27/092 ,  H01L29/49

CPC分类号： H01L29/42376 ,  H01L21/28088 ,  H01L21/3212 ,  H01L21/32139 ,  H01L21/823807 ,  H01L21/82385 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

摘要： A method of forming a semiconductor device includes forming first and second semiconductor structures on a semiconductor substrate. The first semiconductor structure includes a first gate channel region having a first gate length, and the second semiconductor structure including a second gate channel region having a second gate length that is greater than the first gate length. The method further includes depositing a work function metal layer in each of a first gate void formed at the first gate channel region and a second gate void formed at the second gate channel region. The method further includes depositing a semiconductor masking layer on the work function metal layer, and simultaneously etching the silicon masking layer located at the first and second gate channel regions to re-expose the first and second gate voids. A low-resistive metal is deposited in the first and second gate voids to form low-resistive metal gate stacks.

公开(公告)号：US09040369B2

公开(公告)日：2015-05-26

申请号：US13752567

申请日：2013-01-29

申请人： International Business Machines Corporation

发明人： Shahab Siddiqui ,  Michael P. Chudzik ,  Carl J. Radens

IPC分类号： H01L21/338 ,  H01L29/66 ,  H01L21/28 ,  H01L21/768 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L29/66575 ,  H01L21/28088 ,  H01L21/76897 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

摘要： The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replacement gate structure is removed to provide an opening exposing the channel region of the substrate. A functional gate structure is formed over the channel region including a work function metal layer. A protective cap structure is formed over the functional gate structure. At least one via is etched through the mandrel dielectric layer selective to the protective cap structure to expose a portion of at least one of the source region and the drain region. A conductive fill is then formed in the vias to provide a contact to the at least one of the source region and the drain region.

摘要翻译： 本公开提供了一种用于形成半导体器件的方法，其包括形成覆盖在衬底的沟道区上的替代栅极结构。 在衬底的源极和漏极区域上形成心轴介电层。 去除替代栅极结构以提供暴露衬底的沟道区的开口。 在包括功函数金属层的沟道区域上形成功能栅极结构。 在功能栅极结构上形成保护帽结构。 通过对保护盖结构有选择性的心轴介质层蚀刻至少一个通孔，以暴露源极区域和漏极区域中的至少一个的一部分。 然后在通孔中形成导电填充物以提供与源极区域和漏极区域中的至少一个的接触。

公开(公告)号：US20140308821A1

公开(公告)日：2014-10-16

申请号：US13863580

申请日：2013-04-16

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Takashi Ando ,  Michael P. Chudzik ,  Min Dai ,  Martin M. Frank ,  David F. Hilscher ,  Rishikesh Krishnan ,  Barry P. Linder ,  Claude Ortolland ,  Joseph F. Shepard, JR.

IPC分类号： H01L21/02

CPC分类号： H01L21/02301 ,  C23C16/0227 ,  C23C16/403 ,  C23C16/405 ,  C23C16/407 ,  C23C16/45525 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/28194 ,  H01L21/762 ,  H01L29/16 ,  H01L29/161 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations.

摘要翻译： 用碱性溶液处理含半导体的电介质材料/氧氮化物/氮化物的表面，以提供表面的羟基终止。 随后通过原子层沉积沉积介电金属氧化物。 羟基终止提供了促进介电金属氧化物的成核和沉积的均匀的表面条件，并且减少了氧化物和介电金属氧化物之间的界面缺陷。 此外，用碱性溶液处理从锗锗合金的表面除去更多的锗原子浓度的锗，从而减少氧化物和电介质金属氧化物的组合的总厚度与不同锗的表面的差异 浓度

公开(公告)号：US09831084B2

公开(公告)日：2017-11-28

申请号：US14874386

申请日：2015-10-03

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Michael P. Chudzik ,  Min Dai ,  Martin M. Frank ,  David F. Hilscher ,  Rishikesh Krishnan ,  Barry P. Linder ,  Claude Ortolland ,  Joseph F. Shepard, Jr.

IPC分类号： H01L21/311 ,  H01L21/8238 ,  H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  C23C16/02 ,  C23C16/455 ,  H01L21/762 ,  H01L29/16 ,  H01L29/161 ,  C23C16/40

CPC分类号： H01L21/02301 ,  C23C16/0227 ,  C23C16/403 ,  C23C16/405 ,  C23C16/407 ,  C23C16/45525 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/28194 ,  H01L21/762 ,  H01L29/16 ,  H01L29/161 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations.

公开(公告)号：US20160181353A1

公开(公告)日：2016-06-23

申请号：US14572974

申请日：2014-12-17

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Eduard A. Cartier ,  Michael P. Chudzik ,  Aritra Dasgupta ,  Herbert L. Ho ,  Donghun Kang ,  Rishikesh Krishnan ,  Vijay Narayanan ,  Kern Rim

IPC分类号： H01L49/02 ,  H01L23/00

CPC分类号： H01L21/02365 ,  H01G4/005 ,  H01L21/02178 ,  H01L21/02617 ,  H01L21/20 ,  H01L21/3221 ,  H01L23/26 ,  H01L27/10861 ,  H01L27/1087 ,  H01L28/60 ,  H01L28/90 ,  H01L29/66181 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method including forming an oxygen gettering layer on one side of an insulating layer of a deep trench capacitor between the insulating layer and a substrate, the oxygen gettering layer including an aluminum containing compound, and depositing an inner electrode on top of the insulating layer, the inner electrode including a metal.

摘要翻译： 一种包括在绝缘层和衬底之间的深沟槽电容器的绝缘层的一侧上形成氧吸气层的方法，所述吸氧层包括含铝化合物，并且在绝缘层的顶部上沉积内电极， 内部电极包括金属。

公开(公告)号：US09373501B2

公开(公告)日：2016-06-21

申请号：US13863580

申请日：2013-04-16

申请人： International Business Machines Corporation

发明人： Takashi Ando ,  Michael P. Chudzik ,  Min Dai ,  Martin M. Frank ,  David F. Hilscher ,  Rishikesh Krishnan ,  Barry P. Linder ,  Claude Ortolland ,  Joseph F. Shepard, Jr.

IPC分类号： H01L21/02 ,  H01L21/28 ,  H01L21/31 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  C23C16/02 ,  C23C16/455 ,  H01L21/762 ,  H01L29/16 ,  H01L29/161 ,  H01L29/51 ,  C23C16/40

CPC分类号： H01L21/02301 ,  C23C16/0227 ,  C23C16/403 ,  C23C16/405 ,  C23C16/407 ,  C23C16/45525 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/28194 ,  H01L21/762 ,  H01L29/16 ,  H01L29/161 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations.

摘要翻译： 用碱性溶液处理含半导体的电介质材料/氧氮化物/氮化物的表面，以提供表面的羟基终止。 随后通过原子层沉积沉积介电金属氧化物。 羟基终止提供了促进介电金属氧化物的成核和沉积的均匀的表面条件，并且减少了氧化物和介电金属氧化物之间的界面缺陷。 此外，用碱性溶液处理从锗锗合金的表面除去更多的锗原子浓度的锗，从而减少氧化物和电介质金属氧化物的组合的总厚度与不同锗的表面的差异 浓度

公开(公告)号：US09087927B2

公开(公告)日：2015-07-21

申请号：US14521743

申请日：2014-10-23

申请人： International Business Machines Corporation

发明人： Michael P. Chudzik ,  Bachir Dirahoui ,  Rishikesh Krishnan ,  Siddarth A. Krishnan ,  Oh-jung Kwon ,  Paul C. Parries ,  Hongwen Yan

IPC分类号： H01L49/02 ,  H01L21/84 ,  H01L27/108 ,  H01L29/94 ,  H01L27/12 ,  H01L21/02

CPC分类号： H01L28/91 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/84 ,  H01L27/10847 ,  H01L27/1087 ,  H01L27/1203 ,  H01L29/945

摘要： A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.

摘要翻译： 在一个实施例中的沟槽结构包括存在于衬底中的沟槽，以及连续存在于沟槽的侧壁和基底上的电介质层。 电介质层的介电常数大于30.介电层由四方相铪氧化物组成，其中硅存在于四方相铪氧化物的晶界中，其量为3wt。 ％至20重量％ ％。

公开(公告)号：US20150187901A1

公开(公告)日：2015-07-02

申请号：US14640698

申请日：2015-03-06

申请人： International Business Machines Corporation

发明人： Michael P. Chudzik ,  Barry P. Linder ,  Shahab Siddiqui

IPC分类号： H01L29/51 ,  H01L29/10 ,  H01L27/12 ,  H01L29/16 ,  H01L29/161 ,  H01L29/06 ,  H01L29/423

CPC分类号： H01L29/513 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/2807 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/324 ,  H01L21/823412 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/161 ,  H01L29/42364 ,  H01L29/518

摘要： A gate dielectric can be formed by depositing a first silicon oxide material by a first atomic layer deposition process. The thickness of the first silicon oxide material is selected to correspond to at least 10 deposition cycles of the first atomic layer deposition process. The first silicon oxide material is converted into a first silicon oxynitride material by a first plasma nitridation process. A second silicon oxide material is subsequently deposited by a second atomic layer deposition process. The second silicon oxide material is converted into a second silicon oxynitride material by a second plasma nitridation process. Multiple repetitions of the atomic layer deposition process and the plasma nitridation process provides a silicon oxynitride material having a ratio of nitrogen atoms to oxygen atoms greater than 1/3, which can be advantageously employed to reduce the leakage current through a gate dielectric.

摘要翻译： 可以通过利用第一原子层沉积工艺沉积第一氧化硅材料来形成栅极电介质。 选择第一氧化硅材料的厚度以对应于第一原子层沉积工艺的至少10个沉积循环。 通过第一等离子体氮化工艺将第一氧化硅材料转化为第一氮氧化硅材料。 随后通过第二原子层沉积工艺沉积第二氧化硅材料。 通过第二等离子体氮化处理将第二氧化硅材料转化为第二氮氧化硅材料。 原子层沉积工艺和等离子体氮化处理的多次重复提供氮氮原子与氧原子的比例大于1/3的氮氧化硅材料，其可以有利地用于减少通过栅极电介质的漏电流。

公开(公告)号：US09006064B2

公开(公告)日：2015-04-14

申请号：US13793804

申请日：2013-03-11

申请人： International Business Machines Corporation

发明人： Michael P. Chudzik ,  Barry P. Linder ,  Shahab Siddiqui

IPC分类号： H01L21/02 ,  H01L27/088

CPC分类号： H01L29/513 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02236 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/02318 ,  H01L21/02326 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/2807 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/324 ,  H01L21/823412 ,  H01L27/088 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/161 ,  H01L29/42364 ,  H01L29/518

摘要： A gate dielectric can be formed by depositing a first silicon oxide material by a first atomic layer deposition process. The thickness of the first silicon oxide material is selected to correspond to at least 10 deposition cycles of the first atomic layer deposition process. The first silicon oxide material is converted into a first silicon oxynitride material by a first plasma nitridation process. A second silicon oxide material is subsequently deposited by a second atomic layer deposition process. The second silicon oxide material is converted into a second silicon oxynitride material by a second plasma nitridation process. Multiple repetitions of the atomic layer deposition process and the plasma nitridation process provides a silicon oxynitride material having a ratio of nitrogen atoms to oxygen atoms greater than 1/3, which can be advantageously employed to reduce the leakage current through a gate dielectric.