Through Substrate Via Semiconductor Components
    40.
    发明申请
    Through Substrate Via Semiconductor Components 有权
    通过基板通过半导体元件

    公开(公告)号:US20090134497A1

    公开(公告)日:2009-05-28

    申请号:US11944846

    申请日:2007-11-26

    IPC分类号: H01L29/417 H01L21/441

    摘要: A structure and method of forming landing pads for through substrate vias in forming stacked semiconductor components are described. In various embodiments, the current invention describes landing pad structures that includes multiple levels of conductive plates connected by vias such that the electrical connection between a through substrate etch and landing pad is independent of the location of the bottom of the through substrate trench.

    摘要翻译: 描述了在形成堆叠的半导体部件中形成通过衬底通孔的着陆焊盘的结构和方法。 在各种实施例中,本发明描述着陆焊盘结构,其包括通过通孔连接的多层导电板,使得贯穿衬底蚀刻和着陆焊盘之间的电连接独立于贯穿衬底沟槽的底部的位置。