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    Method for growing semiconductor film and method for fabricating semiconductor device
    31.
    发明授权
    Method for growing semiconductor film and method for fabricating semiconductor device 失效
    用于生长半导体膜的方法和用于制造半导体器件的方法

    公开(公告)号：US06306211B1

    公开(公告)日：2001-10-23

    申请号：US09523671

    申请日：2000-03-10

    申请人： Kunimasa Takahashi ,  Makoto Kitabatake ,  Masao Uchida ,  Toshiya Yokogawa

    发明人： Kunimasa Takahashi ,  Makoto Kitabatake ,  Masao Uchida ,  Toshiya Yokogawa

    IPC分类号： C30B2514

    CPC分类号： H01L29/66068 ,  C30B25/02 ,  C30B25/14 ,  C30B29/52 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/02658 ,  H01L21/0455 ,  H01L29/365 ,  H01L29/66431

    摘要： In a chamber, a substrate is mounted on a susceptor and then heated to an elevated temperature. Source and diluting gases are supplied into the chamber through source and diluting gas supply pipes provided with respective flow meters. In addition, a doping gas is also supplied through an additive gas supply pipe, which is provided with a pulse valve, and a gas inlet pipe into the chamber by repeatedly opening and closing the pulse valve. In this manner, a doped layer is grown epitaxially on the substrate. In this case, a pulsed flow of the doping gas is directly supplied through the pulse valve onto the substrate from the outlet port of a pressure reducer for a doping gas cylinder. As a result, a steeply rising dopant concentration profile appears in a transition region between the substrate and the doped layer, and the surface of the doped layer is planarized.

    摘要翻译： 在室中，将基底安装在基座上，然后加热到升高的温度。 源和稀释气体通过源和稀释供应有相应流量计的气体供应管道供应到室中。 此外，还通过反复打开和关闭脉冲阀，通过设置有脉冲阀的添加剂气体供给管和进入管中的气体导入管来供给掺杂气体。 以这种方式，在衬底上外延生长掺杂层。 在这种情况下，掺杂气体的脉冲流通过脉冲阀从用于掺杂气体筒的减压器的出口直接供给到基板上。 结果，在衬底和掺杂层之间的过渡区域中出现急剧上升的掺杂剂浓度分布，并且掺杂层的表面被平坦化。

    Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate
    37.
    发明授权
    Silicon carbide substrate, and method for producing the substrate, and semiconductor device utilizing the substrate 失效
    碳化硅基板及其制造方法以及使用该基板的半导体装置

    公开(公告)号：US06270573B1

    公开(公告)日：2001-08-07

    申请号：US09297129

    申请日：1999-04-26

    申请人： Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi

    发明人： Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi

    IPC分类号： C30B2518

    CPC分类号： H01L29/1608 ,  C30B23/02 ,  C30B29/36 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/66068 ,  Y10S117/913 ,  Y10T428/12576 ,  Y10T428/12674

    摘要： A silicon carbide thin film is epitaxially grown by an MBE or the like method with silicon atoms 2 being maintained to be in excess of carbon atoms on a growth surface 1a of a silicon carbide crystal in a substrate 1. A silicon carbide substrate with a good crystallinity is thereby achieved at a low temperature with a good reproducibility. This crystal growth is possible at a low temperature of 1300° C. or lower, and the productions of a high-concentration doped film, a selectively grown film, and a grown film of a cubic silicon carbide on a hexagonal crystal are achieved. In crystallizing a cubic silicon carbide on a hexagonal crystal, the use of an off-cut surface inclined towards a direction is effective to prevent an occurrence of twin.

    摘要翻译： 通过在基板1中的碳化硅晶体的生长面1a上保持硅原子2保持为超过碳原子的MBE等外观生长碳化硅薄膜。具有良好的碳化硅基板 从而在低温下实现了结晶度的良好的再现性。 可以在1300℃以下的低温下进行晶体生长，可以实现六方晶的高浓度掺杂膜，选择性生长膜和立方碳化硅生长膜的制备。 在六方晶上结晶立方碳化硅时，使用朝向<1 {overscore（1）} 00>方向倾斜的偏斜表面是有效的，以防止双胞胎发生。

    Method for making insulated-gate semiconductor element
    38.
    发明授权
    Method for making insulated-gate semiconductor element 有权
    制造绝缘栅半导体元件的方法

    公开(公告)号：US06228720B1

    公开(公告)日：2001-05-08

    申请号：US09507714

    申请日：2000-02-18

    申请人： Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Takeshi Uenoyama

    发明人： Makoto Kitabatake ,  Masao Uchida ,  Kunimasa Takahashi ,  Takeshi Uenoyama

    IPC分类号： H01L21336

    CPC分类号： H01L29/7813 ,  H01L21/049 ,  H01L29/66068

    摘要： An insulated-gate semiconductor element with a trench structure is provided, which has a high breakdown voltage even though a silicon carbide substrate is used that is preferable to obtain a semiconductor element with favorable properties. The surface of a silicon carbide substrate is etched to form a concave portion. Then, a particle beam, for example an ion beam, is irradiated from above, and a defect layer is formed at least in a bottom surface of the concave portion. The substrate is heated in an oxidation atmosphere, and an oxide film is formed at least on a side surface and the bottom surface of the concave portion. Then, a gate electrode is formed on the oxide film. With this method, the oxide film at the bottom surface of the concave portion is thicker than the oxide film at the side surfaces of the concave portion, so that a high breakdown voltage can be ensured, even when the surface of the silicon carbide layer is a face with which a superior epitaxial layer can be attained, such as the (111) Si-face of &bgr;-SiC or the (0001) Si-face of &agr;-SiC.

    摘要翻译： 提供了具有沟槽结构的绝缘栅半导体元件，即使使用优选获得具有良好特性的半导体元件的碳化硅衬底，其具有高的击穿电压。 蚀刻碳化硅衬底的表面以形成凹部。 然后，从上方照射粒子束，例如离子束，至少在凹部的底面形成有缺陷层。 在氧化气氛中加热基板，至少在凹部的侧面和底面形成氧化膜。 然后，在氧化膜上形成栅电极。 通过该方法，凹部底面的氧化膜比凹部的侧面的氧化膜厚，因此即使当碳化硅层的表面为 可以获得优异的外延层的面，例如β-SiC的（111）Si面或α-SiC的（0001）Si面。

    SEMICONDUCTOR ELEMENT
    39.
    发明申请
    SEMICONDUCTOR ELEMENT 有权
    半导体元件

    公开(公告)号：US20120305944A1

    公开(公告)日：2012-12-06

    申请号：US13504360

    申请日：2011-10-14

    申请人： Makoto Kitabatake ,  Masao Uchida

    发明人： Makoto Kitabatake ,  Masao Uchida

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7828 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7391

    摘要： A semiconductor element according to the present invention can perform both a transistor operation and a diode operation via its channel layer. If the potential Vgs of its gate electrode 165 with respect to that of its source electrode 150 is 0 volts, then a depletion layer with a thickness Dc, which has been depleted entirely in the thickness direction, is formed in at least a part of the channel layer 150 due to the presence of a pn junction between a portion of its body region 130 and the channel layer 150, and another depletion layer that has a thickness Db as measured from the junction surface of the pn junction is formed in that portion of the body region 130. If the dielectric constant of the wide bandgap semiconductor is identified by ∈s, the dielectric constant and the thickness of the insulating film 160 are identified by ∈i and Di, respectively, the sum of Dc and Db is identified by Ds, and the absolute value of the turn-on voltage of the diode is identified by Vf0, then Ds

    摘要翻译： 根据本发明的半导体元件可以经由其沟道层执行晶体管操作和二极管操作两者。 如果栅极电极165的电位Vgs相对于其源电极150的电压为0伏，则在至少一部分厚度方向上已经耗尽的具有厚度Dc的耗尽层 由于在其主体区域130的一部分和沟道层150之间存在pn结，并且从pn结的接合表面测量出的具有厚度Db的另一个耗尽层形成在沟道层150的那部分 如果宽带隙半导体的介电常数用∈s识别，则绝缘膜160的介电常数和厚度分别由∈i和Di标识，Dc和Db之和通过 Ds，二极管的导通电压的绝对值由Vf0表示，则满足Ds

    Semiconductor element
    40.
    发明授权
    Semiconductor element 有权
    半导体元件

    公开(公告)号：US08742427B2

    公开(公告)日：2014-06-03

    申请号：US13504360

    申请日：2011-10-14

    申请人： Makoto Kitabatake ,  Masao Uchida

    发明人： Makoto Kitabatake ,  Masao Uchida

    IPC分类号： H01L29/15

    CPC分类号： H01L29/7828 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/7391

    摘要： A semiconductor element according to the present invention can perform both a transistor operation and a diode operation via its channel layer. If the potential Vgs of its gate electrode 165 with respect to that of its source electrode 150 is 0 volts, then a depletion layer with a thickness Dc, which has been depleted entirely in the thickness direction, is formed in at least a part of the channel layer 150 due to the presence of a pn junction between a portion of its body region 130 and the channel layer 150, and another depletion layer that has a thickness Db as measured from the junction surface of the pn junction is formed in that portion of the body region 130. If the dielectric constant of the wide bandgap semiconductor is identified by ∈s, the dielectric constant and the thickness of the insulating film 160 are identified by ∈i and Di, respectively, the sum of Dc and Db is identified by Ds, and the absolute value of the turn-on voltage of the diode is identified by Vf0, then Ds

    摘要翻译： 根据本发明的半导体元件可以经由其沟道层执行晶体管操作和二极管操作两者。 如果栅极电极165的电位Vgs相对于其源电极150的电压为0伏，则在至少一部分厚度方向上已经耗尽的具有厚度Dc的耗尽层 由于在其主体区域130的一部分和沟道层150之间存在pn结，并且从pn结的接合表面测量出的具有厚度Db的另一个耗尽层形成在沟道层150的那部分 如果宽带隙半导体的介电常数用∈s识别，则绝缘膜160的介电常数和厚度分别由∈i和Di标识，Dc和Db之和通过 Ds，二极管的导通电压的绝对值由Vf0表示，则满足Ds