公开(公告)号：US20130075770A1

公开(公告)日：2013-03-28

申请号：US13431834

申请日：2012-03-27

申请人： Arpan Chakraborty ,  Michael Grundmann ,  Anurag Tyagi

发明人： Arpan Chakraborty ,  Michael Grundmann ,  Anurag Tyagi

IPC分类号： H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16

摘要： A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

摘要翻译： 一种在Ga面c面（Al，Ga，In）N基板上使用具有大于至少0.35度朝向m方向的晶面的c面表面提供（Al，Ga，In）N薄膜的方法。 发光器件形成在光滑（Al，Ga，In）N薄膜上。 在光滑表面上制造的器件表现出改进的性能。

公开(公告)号：US08232564B2

公开(公告)日：2012-07-31

申请号：US12287764

申请日：2008-10-13

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/44 ,  H01L23/3114 ,  H01L33/38 ,  H01L33/504 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0041

摘要： Methods for wafer level fabricating of light emitting diode (LED) chips are disclosed with one embodiment of a method according to the present invention comprising providing a plurality of LEDs and then coating of the LEDs with a layer of first conversion material so that at least some light from the LEDs passes through the first conversion material. The light is converted to different wavelengths of light having a first conversion material emission spectrum. The LEDs are then coated with a layer of second conversion material arranged on the first layer of conversion. The second conversion material has a wavelength excitation spectrum, and at least some light from the LEDs passes through the second conversion material and is converted. The first conversion material emission spectrum does not substantially overlap with the second conversion material excitation spectrum. Methods according to the present invention can also be used in wafer level fabrication of LED chips and LED packages with pedestals for electrically contacting the LEDs through the conversion coatings.

摘要翻译： 公开了根据本发明的方法的一个实施例的用于发光二极管（LED）芯片的晶片级制造的方法，包括提供多个LED，然后用一层第一转换材料涂覆LED，使得至少一些 来自LED的光通过第一转换材料。 光被转换成具有第一转换材料发射光谱的不同波长的光。 然后用布置在第一转换层上的第二转换材料层涂覆LED。 第二转换材料具有波长激发光谱，并且来自LED的至少一些光通过第二转换材料并被转换。 第一转换材料发射光谱基本上不与第二转换材料激发光谱重叠。 根据本发明的方法也可用于具有用于通过转换涂层电接触LED的基座的LED芯片和LED封装的晶片级制造。

公开(公告)号：US20110169138A1

公开(公告)日：2011-07-14

申请号：US12909702

申请日：2010-10-21

申请人： You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

发明人： You-Da Lin ,  Arpan Chakraborty ,  Shuji Nakamura ,  Steven P. DenBaars

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L21/28

CPC分类号： H01L21/02389 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/40 ,  H01L2933/0016

摘要： A method of fabricating a p-type contact on a nonpolar or semipolar (Al,Ga,In)N device, includes the steps of growing a p-type layer on an (Al,Ga,In)N device, wherein the (Al,Ga,In)N device is a nonpolar or semipolar (Al,Ga,In)N device, and the p-type layer is a nonpolar or semipolar (Al,Ga,In)N layer; and cooling the p-type layer down, in the presence of Bis(Cyclopentadienyl)Magnesium (Cp2Mg), to form a magnesium-nitride (MgxNy) layer on the p-type layer. A metal deposition is performed to fabricate a p-type contact on the p-type layer of the (Al,Ga,In)N device, after the cooling step, wherein the p-type contact has a contact resistivity lower than a p-type contact of a polar (Al,Ga,In)N device with substantially similar composition. A hydrogen chloride (HCl) pre-treatment of the p-type layer may be performed, after the cooling step and before the metal deposition step.

摘要翻译： 在非极性或半极性（Al，Ga，In）N器件上制造p型接触的方法包括在（Al，Ga，In）N器件上生长p型层的步骤，其中（Al ，Ga，In）N器件是非极性或半极性（Al，Ga，In）N器件，p型层是非极性或半极性（Al，Ga，In）N层; 并在双（环戊二烯基）镁（Cp2Mg）的存在下，向下冷却p型层，以在p型层上形成氮化镁（Mg x N y）层。 在冷却步骤之后，进行金属沉积以在（Al，Ga，In）N器件的p型层上制造p型接触，其中p型接触的接触电阻低于p- 极性（Al，Ga，In）N器件的类型接触具有基本相似的组成。 可以在冷却步骤之后和金属沉积步骤之前进行p型层的氯化氢（HCl）预处理。

公开(公告)号：US20110056429A1

公开(公告)日：2011-03-10

申请号：US12859153

申请日：2010-08-18

申请人： James Raring ,  Arpan Chakraborty ,  Christiane Poblenz

发明人： James Raring ,  Arpan Chakraborty ,  Christiane Poblenz

IPC分类号： C30B25/20 ,  C30B25/02 ,  C30B25/08

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075

摘要： A method for rapid growth of gallium and nitrogen containing material is described. The method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial material of first thickness is formed over the substrate, preferably with a pseudomorphical process. The method also forms a second epitaxial layer over the first to create a stacked structure. The stacked structure consists of a total thickness of less than about 2 microns.

摘要翻译： 描述了含镓和氮的材料快速生长的方法。 该方法包括提供大量含镓和氮的衬底。 首先在衬底上形成第一厚度的第一外延材料，优选用假晶法。 该方法还在第一外层上形成第二外延层以产生堆叠结构。 堆叠结构由小于约2微米的总厚度组成。

公开(公告)号：US20100309943A1

公开(公告)日：2010-12-09

申请号：US12795360

申请日：2010-06-07

申请人： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

发明人： Arpan Chakraborty ,  You-Da Lin ,  Shuji Nakamura ,  Steven P. DenBaars

IPC分类号： H01S5/00 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2022 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3216

摘要： A laser diode, grown on a miscut nonpolar or semipolar substrate, with lower threshold current density and longer stimulated emission wavelength, compared to conventional laser diode structures, wherein the laser diode's (1) n-type layers are grown in a nitrogen carrier gas, (2) quantum well layers and barrier layers are grown at a slower growth rate as compared to other device layers (enabling growth of the p-type layers at higher temperature), (3) high Al content electron blocking layer enables growth of layers above the active region at a higher temperature, and (4) asymmetric AlGaN SPSLS allowed growth of high Al containing p-AlGaN layers. Various other techniques were used to improve the conductivity of the p-type layers and minimize the contact resistance of the contact layer.

摘要翻译： 与常规激光二极管结构相比，激光二极管（1）n型层在氮载气中生长，其中激光二极管生长在杂交非极性或半极性衬底上，具有较低的阈值电流密度和较长的受激发射波长， （2）与其他器件层相比，量子阱层和阻挡层以较慢的生长速率生长（使得能够在较高温度下生长p型层），（3）高Al含量的电子阻挡层能使上述层生长 在较高温度下的有源区，和（4）不对称的AlGaN SPSLS允许含高Al含量的p-AlGaN层的生长。 使用各种其它技术来改善p型层的导电性并使接触层的接触电阻最小化。

公开(公告)号：US20100195684A1

公开(公告)日：2010-08-05

申请号：US12697857

申请日：2010-02-01

申请人： Adele C. Tamboli ,  Evelyn L. Hu ,  Steven P. DenBaars ,  Arpan Chakraborty

发明人： Adele C. Tamboli ,  Evelyn L. Hu ,  Steven P. DenBaars ,  Arpan Chakraborty

IPC分类号： H01S5/323 ,  H01L21/66 ,  H01L21/302 ,  H01L21/306

CPC分类号： H01L21/3063 ,  H01S5/0201 ,  H01S5/0203 ,  H01S5/021 ,  H01S5/32341

摘要： A method for fabricating a semiconductor laser device, by etching facets using a photoelectrochemical (PEC) etch, so that the facets are sufficiently smooth to support optical modes within a cavity bounded by the facets.

摘要翻译： 一种制造半导体激光器件的方法，通过使用光电化学（PEC）蚀刻的蚀刻刻面，使得所述刻面足够光滑以支持由该刻面限定的空腔内的光学模式。

公开(公告)号：US20100079059A1

公开(公告)日：2010-04-01

申请号：US12491654

申请日：2009-06-25

申请人： John Roberts ,  Gerald H. Negley ,  Antony P. van de Ven ,  Arpan Chakraborty ,  Bernd Keller ,  Ronan P. Le Toquin

发明人： John Roberts ,  Gerald H. Negley ,  Antony P. van de Ven ,  Arpan Chakraborty ,  Bernd Keller ,  Ronan P. Le Toquin

IPC分类号： H01J63/04

CPC分类号： F21K9/00 ,  F21S4/20 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2924/0002 ,  Y10S362/80 ,  H01L2924/00

摘要： A solid state lighting apparatus includes a plurality of light emitting diodes (LEDs) including at least a first LED and a second LED. Chromaticities of the first and second LEDs are selected so that a combined light generated by a mixture of light from the pair of LEDs has about a target chromaticity. The first LED may include a first LED chip that emits light in the blue portion of the visible spectrum and a phosphor that emits red light in response to blue light emitted by the first LED chip. The second LED emits light having a color point that is above the planckian locus of a 1931 CIE Chromaticity diagram, and in particular may have a yellow green, greenish yellow or green hue.

摘要翻译： 固态照明装置包括至少包括第一LED和第二LED的多个发光二极管（LED）。 选择第一和第二LED的色度，使得由来自该对LED的光的混合产生的组合光具​​有约目标色度。 第一LED可以包括发射可见光谱的蓝色部分中的光的第一LED芯片和响应于由第一LED芯片发射的蓝光发射红光的荧光体。 第二个LED发出具有高于1931 CIE色度图的平底轨迹的色点的光，特别是可以具有黄绿色，绿黄色或绿色。

公开(公告)号：US20090272996A1

公开(公告)日：2009-11-05

申请号：US12151089

申请日：2008-05-02

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00

CPC分类号： H01L33/501 ,  H01L33/56 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

摘要： An improved light emitting device, especially a phosphor-converted white light device, wherein the light extraction efficiency and the color temperature distribution uniformity are improved by the introduction of both nanoparticles and light scattering particles proximate to the light source. Nanoparticles having a high index of refraction are dispersed throughout a wavelength conversion layer to adjust the index of refraction of the layer for improved light extraction. Light scattering particles may be dispersed in the wavelength conversion layer and/or in a surrounding medium to improve the spatial correlated color temperature uniformity.

摘要翻译： 改进的发光器件，特别是磷光体转换的白光器件，其中通过引入接近光源的纳米颗粒和光散射粒子来提高光提取效率和色温分布均匀性。 具有高折射率的纳米粒子分散在整个波长转换层中，以调整该层的折射率以改善光提取。 光散射颗粒可以分散在波长转换层和/或周围介质中以改善空间相关色温均匀性。

公开(公告)号：US20090057690A1

公开(公告)日：2009-03-05

申请号：US12287764

申请日：2008-10-13

申请人： Arpan Chakraborty

发明人： Arpan Chakraborty

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/44 ,  H01L23/3114 ,  H01L33/38 ,  H01L33/504 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0041

摘要： Methods for wafer level fabricating of light emitting diode (LED) chips are disclosed with one embodiment of a method according to the present invention comprising providing a plurality of LEDs and then coating of the LEDs with a layer of first conversion material so that at least some light from the LEDs passes through the first conversion material. The light is converted to different wavelengths of light having a first conversion material emission spectrum. The LEDs are then coated with a layer of second conversion material arranged on the first layer of conversion. The second conversion material has a wavelength excitation spectrum, and at least some light from the LEDs passes through the second conversion material and is converted. The first conversion material emission spectrum does not substantially overlap with the second conversion material excitation spectrum. Methods according to the present invention can also be used in wafer level fabrication of LED chips and LED packages with pedestals for electrically contacting the LEDs through the conversion coatings.

摘要翻译： 公开了根据本发明的方法的一个实施例的用于发光二极管（LED）芯片的晶片级制造的方法，包括提供多个LED，然后用一层第一转换材料涂覆LED，使得至少一些 来自LED的光通过第一转换材料。 光被转换成具有第一转换材料发射光谱的不同波长的光。 然后用布置在第一转换层上的第二转换材料层涂覆LED。 第二转换材料具有波长激发光谱，并且来自LED的至少一些光通过第二转换材料并被转换。 第一转换材料发射光谱基本上不与第二转换材料激发光谱重叠。 根据本发明的方法也可用于具有用于通过转换涂层电接触LED的基座的LED芯片和LED封装的晶片级制造。

公开(公告)号：US20070267654A1

公开(公告)日：2007-11-22

申请号：US11801283

申请日：2007-05-09

申请人： Arpan Chakraborty ,  Kwang-Choong Kim ,  James Speck ,  Steven DenBaars ,  Umesh Mishra

发明人： Arpan Chakraborty ,  Kwang-Choong Kim ,  James Speck ,  Steven DenBaars ,  Umesh Mishra

IPC分类号： H01L31/00 ,  H01L21/28 ,  H01L21/3205

CPC分类号： H01L21/02639 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L33/007

摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.

摘要翻译： 公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。 该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiN x N）纳米掩模层，以及（b）在SiN的顶部生长GaN膜的厚度， SUB> x 纳米掩模层。