公开(公告)号：US06800139B1

公开(公告)日：2004-10-05

申请号：US09830121

申请日：2001-07-16

申请人： Hiroshi Shinriki ,  Kenji Matsumoto

发明人： Hiroshi Shinriki ,  Kenji Matsumoto

IPC分类号： C23C1600

CPC分类号： C23C16/45519 ,  C23C16/409 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/45589

摘要： A film deposition apparatus (2) forms a PZT film at a high deposition rate under a low temperature by using a single showerhead (50) throughout the deposition process. Process gases including a raw material gas and an oxidant gas are introduced into a process chamber (4) in which a wafer (W) is accommodated. The process chamber (4) is maintained at a predetermined vacuum during the film depositing process. A gas injection surface (57) of the shower head (50) from which the process gases are injected is divided into an inner zone (84) covering a center portion of the wafer (W) and an outer zone (86) surrounding the inner zone (84). The raw material gas is separately injected from the inner zone (84) and the outer zone (86), and the oxidant gas is separately injected from the inner zone (84) and the-outer zone (86).

摘要翻译： 成膜装置（2）通过在整个沉积工艺中使用单个喷头（50），在低温下以高沉积速率形成PZT膜。 包括原料气体和氧化剂气体的处理气体被引入容纳晶片（W）的处理室（4）中。 在成膜过程中，处理室（4）保持在预定的真空度。 喷射头（50）的气体注入表面（57）被分成覆盖晶片（W）的中心部分的内部区域（84）和围绕内部区域（86）的外部区域（86） 区（84）。 从内部区域（84）和外部区域（86）分别注入原料气体，从内部区域（84）和外侧区域（86）分别注入氧化剂气体。

公开(公告)号：US06756235B1

公开(公告)日：2004-06-29

申请号：US09641681

申请日：2000-08-18

申请人： Yijun Liu ,  Hiroshi Shinriki ,  Takashi Magara

发明人： Yijun Liu ,  Hiroshi Shinriki ,  Takashi Magara

IPC分类号： H01L2100

CPC分类号： C23C16/45574 ,  C23C16/409 ,  C23C16/4481 ,  C23C16/45512 ,  C23C16/45565

摘要： In a metal oxide film formation method, a source gas mixture of organic compound gases containing at least three metals, and an oxidation gas are individually prepared. While the substrate is heated, the oxidation gas is supplied to a substrate set in a closed vessel at a predetermined pressure, and then the gas mixture is supplied. A metal oxide film is formed on the substrate. A metal oxide film formation apparatus is also disclosed.

摘要翻译： 在金属氧化膜形成方法中，分别制备含有至少三种金属的有机化合物气体和氧化气体的源气体混合物。 在加热基板的同时，将氧化气体以规定的压力供给到密闭容器内的基板，然后供给气体混合物。 在基板上形成金属氧化物膜。 还公开了一种金属氧化物膜形成装置。

公开(公告)号：US6126753A

公开(公告)日：2000-10-03

申请号：US310132

申请日：1999-05-12

申请人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

发明人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/405 ,  C23C16/409 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4586

摘要： A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd).sub.2 and Sr(thd).sub.2, and a second process gas containing Ti(O-iPr)(thd).sub.2 or Ti(thd).sub.2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.

摘要翻译： 使用单基板处理CVD装置在半导体晶片上形成BST薄膜，同时供给包含Ba（thd）2和Sr（thd）2的混合物的第一工艺气体和含有Ti（ O-iPr）（thd）2或Ti（thd）2。 Ba和Sr的前体比Ti的前体具有更低的活化能和更高的电阻率。 第一和第二工艺气体由具有一组第一喷射孔的喷淋头供应，用于喷射第一处理气体和一组用于喷射第二处理气体的第二喷射孔。 第二喷射孔组被设计成具有从喷淋区域的中心向外径向逐渐减小的直径，使得以从中心向外径向逐渐减小的喷射速率供给第二处理气体。

公开(公告)号：US5834846A

公开(公告)日：1998-11-10

申请号：US518322

申请日：1995-08-23

申请人： Hiroshi Shinriki ,  Takayuki Komiya ,  Hiroshi Yamamoto

发明人： Hiroshi Shinriki ,  Takayuki Komiya ,  Hiroshi Yamamoto

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L29/45 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/485 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76879 ,  H01L23/53271 ,  H01L29/456 ,  H01L2924/0002

摘要： A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of a high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on at least the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by selective Al--CVD, and a metal wiring formed on the insulating film. The metal wiring is electrically connected to the diffusion region by the plug, the anti-diffusion film and the silicide film. The anti-diffusion film is formed by nitriding the surface of the silicide film such that only the grain boundaries of the grains of the silicide film are nitrided.

摘要翻译： 具有接触结构的半导体器件包括硅衬底，形成在硅衬底的表面中的扩散区，沉积在扩散区上的高熔点金属的硅化物膜，形成在硅衬底上的绝缘膜， 形成在绝缘膜上的硅，使得硅化物膜在接触孔的底部露出，至少形成在接触膜底部的硅化物膜的暴露表面上的防扩散膜，形成在 通过选择性Al-CVD的接触孔和形成在绝缘膜上的金属布线。 金属布线通过插头，防扩散膜和硅化物膜电连接到扩散区。 通过对硅化物膜的表面进行氮化而形成防扩散膜，使得只有硅化物膜的晶粒的晶界被氮化。

公开(公告)号：US5679974A

公开(公告)日：1997-10-21

申请号：US353287

申请日：1994-12-05

申请人： Hiroshi Shinriki ,  Yoshimitsu Tamura ,  Tomohiro Ohta

发明人： Hiroshi Shinriki ,  Yoshimitsu Tamura ,  Tomohiro Ohta

IPC分类号： H01L23/525 ,  H01L29/00 ,  H01L29/04

CPC分类号： H01L23/5252 ,  H01L2924/0002

摘要： An antifuse element for a semiconductor device, comprising a bottom electrode made from a conductive material containing a refractory metal and a top electrode made from a conductive material containing a fusible metal. The fusible metal is Al, Al alloy, Cu or Ag. The Al alloy contains at least Si, Cu, Sc, Pd, Ti, Ta or Nb. The refractory metal is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo or W. Silicides are most preferable as the refractory metal. The semiconductor device is programmed by making the top electrode negative or positive and by applying a breakdown voltage between the bottom and top electrodes so as to break down an antifuse material layer, thereby obtaining a filament. The filament is made from the fusible metal from the top electrode and the refractory metal from the bottom electrode. Thus, the filament has a low resistance, and a good EM resistance.

摘要翻译： 一种用于半导体器件的反熔丝元件，包括由含有难熔金属的导电材料制成的底电极和由含有可熔金属的导电材料制成的顶电极。 易熔金属是Al，Al合金，Cu或Ag。 Al合金至少含有Si，Cu，Sc，Pd，Ti，Ta或Nb。 难熔金属是Ti，Zr，Hf，V，Nb，Ta，Cr，Mo或W.作为难熔金属，最优选的是硅化物。 半导体器件通过使顶部电极为负极或正极并通过在底部电极和顶部电极之间施加击穿电压来编程，以便分解反熔丝材料层，从而获得细丝。 长丝由顶部电极的熔融金属和来自底部电极的难熔金属制成。 因此，灯丝具有低电阻和良好的电磁电阻。

公开(公告)号：US07655564B2

公开(公告)日：2010-02-02

申请号：US11955275

申请日：2007-12-12

申请人： Hiroshi Shinriki ,  Daekyun Jeong

发明人： Hiroshi Shinriki ,  Daekyun Jeong

IPC分类号： H01L21/44

CPC分类号： C23C16/45542 ,  C23C16/045 ,  C23C16/06 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a Ta—Ru metal liner layer for Cu wiring includes: (i) conducting atomic deposition of Ta X times, each atomic deposition of Ta being accomplished by a pulse of hydrogen plasma, wherein X is an integer such that a surface of an underlying layer is not covered with Ta particles; (ii) after step (i), conducting atomic deposition of Ru Y times, each atomic deposition of Ru being accomplished by a pulse of hydrogen plasma, wherein Y is an integer such that the Ta particles are not covered with Ru particles; and (iii) repeating steps (i) and (ii) Z times, thereby forming a Ta—Ru metal liner layer on a Cu wiring substrate.

摘要翻译： 形成Cu布线的Ta-Ru金属衬垫层的方法包括：（i）进行Ta X的原子沉积，Ta的每个原子沉积由氢等离子体的脉冲完成，其中X是整数，使得表面 的下层不被Ta颗粒覆盖; （ii）在步骤（i）之后，进行Ru Y次的原子沉积，Ru的每个原子沉积由氢等离子体的脉冲实现，其中Y是使Ta颗粒不被Ru颗粒覆盖的整数; 和（iii）重复步骤（i）和（ii）Z次，从而在Cu布线基板上形成Ta-Ru金属衬垫层。

公开(公告)号：US07435484B2

公开(公告)日：2008-10-14

申请号：US11469828

申请日：2006-09-01

申请人： Hiroshi Shinriki ,  Hiroaki Inoue

发明人： Hiroshi Shinriki ,  Hiroaki Inoue

IPC分类号： B32B15/01 ,  B32B15/04 ,  B32B15/20

CPC分类号： H01L23/53238 ,  C23C16/02 ,  C23C16/0245 ,  C23C16/18 ,  C23C16/36 ,  C23C16/45542 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10T428/12875 ,  Y10T428/12903 ,  Y10T428/265 ,  H01L2924/00

摘要： A method of depositing a ruthenium(Ru) thin film on a substrate in a reaction chamber, includes: (i) supplying a gas of a ruthenium precursor into the reaction chamber so that the gas of the ruthenium precursor is adsorbed onto the substrate, wherein the ruthenium precursor a ruthenium complex contains a non-cyclic dienyl; (ii) supplying an excited reducing gas into the reaction chamber to activate the ruthenium precursor adsorbed onto the substrate; and (iii) repeating steps (i) and (ii), thereby forming a ruthenium thin film on the substrate.

摘要翻译： 在反应室中的基板上沉积钌（Ru）薄膜的方法包括：（i）将钌前驱体的气体供应到反应室中，使得钌前驱体的气体被吸附到基底上，其中 钌前体钌络合物含有非环状二烯基; （ii）将激发的还原气体供应到反应室中以活化吸附到基底上的钌前体; 和（iii）重复步骤（i）和（ii），从而在基材上形成钌薄膜。

公开(公告)号：US20080134976A1

公开(公告)日：2008-06-12

申请号：US12030054

申请日：2008-02-12

申请人： Hiroshi Shinriki ,  Kenji Matsumoto ,  Toru Tatsumi

发明人： Hiroshi Shinriki ,  Kenji Matsumoto ,  Toru Tatsumi

IPC分类号： C23C16/54

CPC分类号： H01L21/02271 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C30B25/14 ,  H01L21/02197 ,  H01L21/31691

摘要： A shower head having a plurality of ejection holes for supplying an organic metal gas at uniform density to the surface of a substrate and a plurality of ejection holes for supplying an oxidizing gas at uniform density to the same is provided in a reaction furnace of an MOCVD system. A heater for heating the inside to a temperature higher than the thermal decomposition point of the organic metal gas but lower than the film forming temperature is provided in the vicinity of the substrate-side surface of the shower head.

摘要翻译： 具有多个用于将均匀密度的有机金属气体供给到基板表面的喷头，并且在MOCVD的反应炉中设置多个用于以均匀密度供给氧化气体的喷射孔 系统。 在淋浴头的基板侧表面附近设置有用于将内部加热到高于有机金属气体的热分解点但低于成膜温度的温度的加热器。

公开(公告)号：US20060081186A1

公开(公告)日：2006-04-20

申请号：US11296225

申请日：2005-12-08

申请人： Hiroshi Shinriki ,  Masahito Sugiura

发明人： Hiroshi Shinriki ,  Masahito Sugiura

IPC分类号： C23C16/00

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/44 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/31604 ,  H01L28/56

摘要： An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.

摘要翻译： 在半导体晶片上形成由第一和第二钽氧化物层构成的绝缘膜。 首先，通过CVD形成非晶质第一层，并且进行用于除去第一层中所含有机杂质的重整工序。 然后，在第一层上通过CVD形成无定形第二层。 然后，通过在一定时间内将晶片加热至低于结晶温度的温度，将含有臭氧的工艺气体供给到处理室中，来进行用于除去第二层中所含有机杂质的重整工序。 此外，在相同的处理室内，将晶片依次加热至高于结晶温度的第二温度，然后将晶片冷却至低于结晶温度的温度，以使第一和第二层同时结晶。

公开(公告)号：US06953731B2

公开(公告)日：2005-10-11

申请号：US10457450

申请日：2003-06-10

申请人： Hiroshi Shinriki ,  Kazumi Kubo

发明人： Hiroshi Shinriki ,  Kazumi Kubo

IPC分类号： C23C16/02 ,  C23C16/40 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/51 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L21/28194 ,  C23C16/0272 ,  C23C16/405 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02356 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of fabrication a semiconductor device includes the steps of forming an insulation film containing Si and oxygen on a silicon substrate, and depositing a metal oxide film on the insulation film by a chemical vapor deposition process that uses a metal organic source material, wherein the step of depositing the metal oxide film is conducted such that the metal oxide film takes a crystalline state immediately after the deposition step.

摘要翻译： 制造半导体器件的方法包括以下步骤：在硅衬底上形成含有Si和氧的绝缘膜，并通过使用金属有机源材料的化学气相沉积工艺在绝缘膜上沉积金属氧化物膜，其中 进行沉积金属氧化物膜的步骤，使得金属氧化物膜在沉积步骤之后立即呈结晶状态。