公开(公告)号：US07988808B2

公开(公告)日：2011-08-02

申请号：US12194529

申请日：2008-08-19

Applicant: Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

Inventor： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC: B29C65/00 ,  B32B37/00 ,  B32B38/00 ,  B32B7/14 ,  H01L21/44

CPC classification number: H01L24/13 ,  H01L21/56 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06515 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/14515 ,  H01L2224/29036 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2225/06513 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/3011 ,  Y10T29/49126 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/00012

Abstract: A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

Abstract translation: 提供具有缓冲层的接合结构及其形成方法。 接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属 覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。 第一金属层，电极和接合层被接合以形成接合结构。 可以通过表面活化或热压直接粘合。 该方法使用较少的步骤并且更可靠。 粘结结构所需的温度较低。 接触表面之间的结合密度增加到细间距。 增加接合点的质量，因为产生了接触表面之间的较少的污染物。

公开(公告)号：US07871918B2

公开(公告)日：2011-01-18

申请号：US12368983

申请日：2009-02-10

Applicant: Shyh-Ming Chang

Inventor： Shyh-Ming Chang

IPC: H01L21/44

CPC classification number: H05K3/4007 ,  H01L22/32 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/11515 ,  H01L2224/13007 ,  H01L2224/13012 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13021 ,  H01L2224/13099 ,  H01L2224/1319 ,  H01L2224/13552 ,  H01L2224/13553 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/2919 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H05K2201/0367 ,  H05K2201/0373 ,  H05K2201/09909 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: A manufacturing method of a contact structure includes first providing a substrate on which a contact pad has already been formed. Afterwards, a polymer bump is formed on the contact pad. Next, a conductive layer is formed on the polymer bump. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad.

Abstract translation: 接触结构的制造方法包括首先提供其上已经形成有接触垫的基板。 之后，在接触垫上形成聚合物凸块。 接着，在聚合物凸块上形成导电层。 导电层覆盖聚合物凸块并延伸到聚合物凸块的外部。 延伸到聚合物凸块外部的导电层的部分用作测试垫。

公开(公告)号：US20090253233A1

公开(公告)日：2009-10-08

申请号：US12486771

申请日：2009-06-18

Applicant: Shyh-Ming Chang ,  Sheng-Shu Yang

Inventor： Shyh-Ming Chang ,  Sheng-Shu Yang

IPC: H01L21/60

CPC classification number: H01L21/563 ,  H01L23/295 ,  H01L24/13 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/13011 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/1319 ,  H01L2224/13562 ,  H01L2224/136 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29287 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/83136 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/838 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/9211 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H05K3/305 ,  H05K3/361 ,  H05K2201/0209 ,  H05K2201/0212 ,  H05K2201/10977 ,  H05K2201/2036 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A method of fabricating a bonding structure having compliant bumps includes first providing a first substrate and a second substrate. The first substrate includes first bonding pads. The second substrate is disposed on one side of the first substrate and includes second bonding pads and compliant bumps disposed thereon. The second bonding pads are opposite to the first bonding pads. Next, a non-conductive adhesive layer and ball-shaped spacers are formed between the first and the second substrates. Finally, the first substrate, the non-conductive adhesive layer, and the second substrate are compressed, such that the compliant bumps on the second bonding pads of the second substrate pass through the non-conductive adhesive layer and are electrically connected to the first bonding pads of the first substrate, respectively. The ball-shaped spacers are distributed in the non-conductive adhesive layer sandwiched between the first and the second substrates for maintaining the gap therebetween.

Abstract translation: 制造具有柔顺凸块的接合结构的方法包括首先提供第一基板和第二基板。 第一衬底包括第一接合焊盘。 第二基板设置在第一基板的一侧，并且包括设置在其上的第二接合焊盘和顺应凸块。 第二接合焊盘与第一接合焊盘相对。 接下来，在第一和第二基板之间形成非导电粘合剂层和球形间隔物。 最后，第一基板，非导电粘合剂层和第二基板被压缩，使得第二基板的第二接合焊盘上的顺从凸块穿过非导电粘合剂层，并且电连接到第一接合 第一基板的焊盘。 球形间隔件分布在夹在第一和第二基板之间的非导电粘合剂层中，以保持它们之间的间隙。

公开(公告)号：US20080305624A1

公开(公告)日：2008-12-11

申请号：US12194529

申请日：2008-08-19

Applicant: Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

Inventor： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC: H01L21/44

CPC classification number: H01L24/13 ,  H01L21/56 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06515 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/14515 ,  H01L2224/29036 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2225/06513 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/3011 ,  Y10T29/49126 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/00012

Abstract: A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

Abstract translation: 提供具有缓冲层的接合结构及其形成方法。 接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属 覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。 第一金属层，电极和接合层被接合以形成接合结构。 可以通过表面活化或热压直接粘合。 该方法使用较少的步骤并且更可靠。 粘结结构所需的温度较低。 接触表面之间的结合密度增加到细间距。 增加接合点的质量，因为产生了接触表面之间的较少的污染物。

公开(公告)号：US07449716B2

公开(公告)日：2008-11-11

申请号：US11758013

申请日：2007-06-05

Applicant: Ming-Yao Chen ,  Sheng-Shu Yang ,  Shyh-Ming Chang ,  Ngai Tsang

Inventor： Ming-Yao Chen ,  Sheng-Shu Yang ,  Shyh-Ming Chang ,  Ngai Tsang

IPC: H01L23/58 ,  H01L23/544

CPC classification number: H01L23/49816 ,  H01L22/12 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06505 ,  H01L2224/10135 ,  H01L2224/13012 ,  H01L2224/13016 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/14505 ,  H01L2224/16 ,  H01L2224/81136 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A bump structure on a substrate including at least one first electrode, at least one first bump, at least one second bump is provided. The first electrode is disposed on the substrate. The first bump is disposed on the first electrode. The second bump is disposed on the substrate. The height of the second bump is greater than that of the first bump. The elastic bump of the present invention can be used for measuring the bonding process quality.

Abstract translation: 提供了包括至少一个第一电极，至少一个第一凸块，至少一个第二凸块的衬底上的凸块结构。 第一电极设置在基板上。 第一凸块设置在第一电极上。 第二凸块设置在基板上。 第二凸块的高度大于第一凸块的高度。 本发明的弹性凸块可用于测量接合工艺质量。

公开(公告)号：US07348271B2

公开(公告)日：2008-03-25

申请号：US11644184

申请日：2006-12-22

Applicant: Yuan-Chang Huang ,  Shyh-Ming Chang ,  Su-Chia Lu

Inventor： Yuan-Chang Huang ,  Shyh-Ming Chang ,  Su-Chia Lu

IPC: H01L29/12 ,  H01L21/44

CPC classification number: H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/05026 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0781 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2224/05099

Abstract: A microelectronic structure having a substrate of multiple conductive bumps for contact with bond pads on an electronic substrate in the fabrication of a flip chip electronic assembly. Each of the conductive bumps includes a conductive layer which is absent from at least one sidewall of the bump to prevent the inadvertent formation of a short-circuiting electrical path between adjacent conductive bumps in the electronic assembly.

Abstract translation: 一种微电子结构，其具有多个导电凸块的基板，用于在倒装芯片电子组件的制造中与电子基板上的接合焊盘接触。 每个导电凸块包括导体层，该导电层不存在于凸起的至少一个侧壁中，以防止电子组件中相邻的导电凸块之间的短路电路无意形成。

公开(公告)号：US20080023830A1

公开(公告)日：2008-01-31

申请号：US11603909

申请日：2006-11-24

Applicant: Shyh-Ming Chang ,  Sheng-Shu Yang ,  Chao-Chyun An

Inventor： Shyh-Ming Chang ,  Sheng-Shu Yang ,  Chao-Chyun An

IPC: H01L23/48

CPC classification number: H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/13008 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A contact structure having both a compliant bump and a testing area and a manufacturing method for the same is introduced. The compliant bump is formed on a conductive contact of the silicon wafer or a printed circuit board. The core of the bump is made of polymeric material, and coated with a conductive material. In particular, the compliant bump is disposed on the one side of the conductive contact structure that includes both the bump and the testing area, wherein the testing area allows the area to be functionality tested, so as to prevent damage of the coated conductive material over the compliant bump during a probe testing.

Abstract translation: 引入具有兼容凸起和测试区域的接触结构及其制造方法。 柔性突起形成在硅晶片或印刷电路板的导电接触上。 凸块的核心由聚合材料制成，并涂覆有导电材料。 特别地，柔性突起设置在包括凸起和测试区域的导电接触结构的一侧上，其中测试区域允许该区域被功能性测试，以便防止涂覆的导电材料损坏过度 探针测试期间的顺应性凸块。

公开(公告)号：US20070122635A1

公开(公告)日：2007-05-31

申请号：US11619612

申请日：2007-01-04

Applicant: Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

Inventor： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC: B32B13/04

CPC classification number: B32B15/08 ,  B32B7/12 ,  B32B9/005 ,  B32B15/20 ,  B32B27/281 ,  B32B27/283 ,  B32B2457/08 ,  B32B2457/14 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/8123 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  Y10T428/24917 ,  Y10T428/31667 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

Abstract translation: 提供具有缓冲层的接合结构及其形成方法。 接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属 覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。 第一金属层，电极和接合层被接合以形成接合结构。 可以通过表面活化或热压直接粘合。 该方法使用较少的步骤并且更可靠。 粘结结构所需的温度较低。 接触表面之间的结合密度增加到细间距。 增加接合点的质量，因为产生了接触表面之间的较少的污染物。

公开(公告)号：US20050104223A1

公开(公告)日：2005-05-19

申请号：US10714277

申请日：2003-11-14

Applicant: Yuan-Chang Huang ,  Shyh-Ming Chang ,  Su-Chia Lu

Inventor： Yuan-Chang Huang ,  Shyh-Ming Chang ,  Su-Chia Lu

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/485

CPC classification number: H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/05026 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/73204 ,  H01L2224/81801 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0781 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2224/05099

Abstract: A microelectronic structure having a substrate of multiple conductive bumps for contact with bond pads on an electronic substrate in the fabrication of a flip chip electronic assembly. Each of the conductive bumps includes a conductive layer which is absent from at least one sidewall of the bump to prevent the inadvertent formation of a short-circuiting electrical path between adjacent conductive bumps in the electronic assembly.

Abstract translation: 一种微电子结构，其具有多个导电凸块的基板，用于在倒装芯片电子组件的制造中与电子基板上的接合焊盘接触。 每个导电凸块包括导体层，该导电层不存在于凸起的至少一个侧壁中，以防止电子组件中相邻的导电凸块之间的短路电路无意形成。

公开(公告)号：US06365500B1

公开(公告)日：2002-04-02

申请号：US08518182

申请日：1995-08-23

Applicant: Shyh-Ming Chang ,  Jwo-huei Jou ,  Yu-Chi Lee ,  Dyi-Chung Hu

Inventor： Shyh-Ming Chang ,  Jwo-huei Jou ,  Yu-Chi Lee ,  Dyi-Chung Hu

IPC: H01L2144

CPC classification number: H01L24/10 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/1319 ,  H01L2224/13562 ,  H01L2224/16 ,  H01L2224/81801 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171

Abstract: A bonded structure comprising the physical and electrical connections between an integrated circuit element and substrate using a composite bump comprised of a single polymer body of low Young's Modulus and a conductive metal coating. The bond can be formed using thermocompression bonding, ultrasonic bonding, application of heat or application of light. The bond can also be formed using a non conductive adhesive between the integrated circuit element and the substrate. The bond can also be formed with a conductive adhesive coating on the composite bump.

Abstract translation: 一种结合结构，其包括使用由低杨氏模量的单个聚合物体和导电金属涂层组成的复合凸块的集成电路元件和基板之间的物理和电连接。 可以使用热压接，超声波接合，加热或施加光来形成粘结。 也可以使用集成电路元件和衬底之间的非导电粘合剂形成接合。 也可以在复合凸块上形成导电粘合剂涂层。