公开(公告)号：US07834453B2

公开(公告)日：2010-11-16

申请号：US11762729

申请日：2007-06-13

Applicant: Shyh-Ming Chang

Inventor： Shyh-Ming Chang

IPC: H01L23/48 ,  H01L21/44

CPC classification number: H05K3/4007 ,  H01L22/32 ,  H01L24/13 ,  H01L2224/034 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05567 ,  H01L2224/056 ,  H01L2224/11515 ,  H01L2224/13007 ,  H01L2224/13012 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13019 ,  H01L2224/13021 ,  H01L2224/13099 ,  H01L2224/1319 ,  H01L2224/13552 ,  H01L2224/13553 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/2919 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/0665 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H05K2201/0367 ,  H05K2201/0373 ,  H05K2201/09909 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: A contact structure including a contact pad, a polymer bump and a conductive layer is provided in the present invention. The contact pad is disposed on a substrate. The polymer bump is disposed on the contact pad. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad. The invention further discloses a manufacturing method of a contact structure. First, a substrate is provided having a contact pad already formed thereon. Then, a polymer bump is formed on the contact pad and a conductive layer is formed on the polymer bump. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad.

Abstract translation: 在本发明中提供了包括接触垫，聚合物凸块和导电层的接触结构。 接触垫设置在基板上。 聚合物凸块设置在接触垫上。 导电层覆盖聚合物凸块并延伸到聚合物凸块的外部。 延伸到聚合物凸块外部的导电层的部分用作测试垫。 本发明还公开了一种接触结构的制造方法。 首先，提供具有已在其上形成的接触垫的基板。 然后，在接触焊盘上形成聚合物凸块，并且在聚合物凸块上形成导电层。 导电层覆盖聚合物凸块并延伸到聚合物凸块的外部。 延伸到聚合物凸块外部的导电层的部分用作测试垫。

公开(公告)号：US20080099916A1

公开(公告)日：2008-05-01

申请号：US11669160

申请日：2007-01-31

Applicant: Shyh-Ming Chang ,  Sheng-Shu Yang

Inventor： Shyh-Ming Chang ,  Sheng-Shu Yang

IPC: H01L23/48

CPC classification number: H01L21/563 ,  H01L23/295 ,  H01L24/13 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L2224/0554 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/13011 ,  H01L2224/13012 ,  H01L2224/13015 ,  H01L2224/13017 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/1319 ,  H01L2224/13562 ,  H01L2224/136 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29287 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/73104 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81205 ,  H01L2224/83136 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/838 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/9211 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/15788 ,  H05K3/305 ,  H05K3/361 ,  H05K2201/0209 ,  H05K2201/0212 ,  H05K2201/10977 ,  H05K2201/2036 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A bonding structure including a first substrate, a second substrate, a non-conductive adhesive layer, and ball-shaped spacers is provided. The first substrate has first bonding pads. The second substrate is disposed on one side of the first substrate, and includes second bonding pads and compliant bumps disposed on the second bonding pads, respectively. The second bonding pads on the second substrate are electrically connected to the first bonding pads on the first substrate through the compliant bumps, respectively. The non-conductive adhesive layer is sandwiched between the first substrate and the second substrate. The ball-shaped spacers are distributed in the non-conductive adhesive layer to maintain the gap between the first and second substrates.

Abstract translation: 提供了包括第一基板，第二基板，非导电粘合剂层和球形间隔件的接合结构。 第一衬底具有第一接合焊盘。 第二基板设置在第一基板的一侧，并且分别包括设置在第二接合焊盘上的第二接合焊盘和顺应凸块。 第二基板上的第二接合焊盘分别通过柔性凸块电连接到第一基板上的第一接合焊盘。 非导电性粘合剂层夹在第一基板和第二基板之间。 球形间隔件分布在非导电粘合剂层中以保持第一和第二基板之间的间隙。

公开(公告)号：US20070210457A1

公开(公告)日：2007-09-13

申请号：US11308180

申请日：2006-03-10

Applicant: Ji-Cheng Lin ,  Yao-Sheng Lin ,  Shyh-Ming Chang ,  Su-Tsai Lu ,  Hsien-Chie Cheng ,  Tai-Hong Chen

Inventor： Ji-Cheng Lin ,  Yao-Sheng Lin ,  Shyh-Ming Chang ,  Su-Tsai Lu ,  Hsien-Chie Cheng ,  Tai-Hong Chen

IPC: H01L23/48 ,  H01L23/52

CPC classification number: H01L24/10 ,  H01L23/49811 ,  H01L24/13 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05599

Abstract: A composite bump suitable for disposing on a substrate pad is provided. The composite bump includes a compliant body and an outer conductive layer. The coefficient of thermal expansion (CTE) of the compliant body is between 5 ppm/° C. and 200 ppm/° C. The outer conductive layer covers the compliant body and is electrically connected to the pad. The compliant body can provide a stress buffering effect for a bonding operation. Furthermore, by setting of the CTE of the compliant body within a preferable range, damages caused by thermal stress are reduced while the bonding effect is enhanced.

Abstract translation: 提供了适合于设置在基板焊盘上的复合凸块。 复合凸块包括柔性本体和外导电层。 柔性体的热膨胀系数（CTE）在5ppm /℃和200ppm /℃之间。外部导电层覆盖柔性体并与衬垫电连接。 柔性体可以为粘接操作提供应力缓冲效果。 此外，通过将柔性体的CTE设定在优选范围内，由于热应力引起的损伤降低，同时结合效果增强。

公开(公告)号：US20070056163A1

公开(公告)日：2007-03-15

申请号：US11549655

申请日：2006-10-16

Applicant: Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

Inventor： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC: H05K3/36

CPC classification number: H01L24/13 ,  H01L21/56 ,  H01L24/06 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/06515 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/1403 ,  H01L2224/14515 ,  H01L2224/29036 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2224/83894 ,  H01L2225/06513 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/3011 ,  Y10T29/49126 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/00012

Abstract: A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

公开(公告)号：US06972490B2

公开(公告)日：2005-12-06

申请号：US10829115

申请日：2004-04-20

Applicant: Shyh-Ming Chang ,  Yuan-Chang Huang ,  Wen-Chih Chen ,  Sheng-Shu Yang

Inventor： Shyh-Ming Chang ,  Yuan-Chang Huang ,  Wen-Chih Chen ,  Sheng-Shu Yang

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/498 ,  H05K3/30 ,  H05K3/32 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H05K3/325 ,  H01L23/49816 ,  H01L24/12 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/10135 ,  H01L2224/13016 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/1357 ,  H01L2224/1411 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/81136 ,  H01L2224/81139 ,  H01L2224/81801 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2224/83851 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/3025 ,  H05K3/305 ,  H05K2201/0133 ,  H05K2201/0367 ,  H05K2201/10674 ,  H05K2201/2036 ,  H05K2203/1189 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/3512 ,  H01L2924/00

Abstract: A bonding structure with compliant bumps includes a stopper structure and a protection layer. Compliant bumps include at least a polymer bump, a metal layer and a surface conductive layer. Both the stopper structure and protection layer are formed with polymer bumps and metal layer. Compliant bumps provide bonding pad and conductive channel. Stoppers are used to prevent compliant bumps from crushing for overpressure in bonding process. The protection layer provides functions of grounding and shielding. The stoppers can be outside or connected with the compliant bumps. The protection layer has thickness smaller than the stopper structure and compliant bumps. It can be separated or connected with stoppers.

Abstract translation: 具有柔顺凸块的粘合结构包括止动结构和保护层。 合适的凸块包括至少聚合物凸块，金属层和表面导电层。 阻挡结构和保护层均由聚合物凸块和金属层形成。 符合凸块提供焊盘和导电通道。 止动器用于防止在接合过程中顺应性的颠簸破碎超压。 保护层提供接地和屏蔽功能。 止动器可以在外部或与顺应性凸块连接。 保护层的厚度小于止动结构和柔顺凸块。 它可以与塞子分离或连接。

公开(公告)号：US20050112340A1

公开(公告)日：2005-05-26

申请号：US10829060

申请日：2004-04-20

Applicant: Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

Inventor： Su-Tsai Lu ,  Shu-Ming Chang ,  Shyh-Ming Chang ,  Yao-Sheng Lin ,  Yuan-Chang Huang

IPC: B32B3/00 ,  H01L21/60 ,  H01L21/603

CPC classification number: B32B15/08 ,  B32B7/12 ,  B32B9/005 ,  B32B15/20 ,  B32B27/281 ,  B32B27/283 ,  B32B2457/08 ,  B32B2457/14 ,  H01L24/11 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/056 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/136 ,  H01L2224/16 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/8123 ,  H01L2224/81801 ,  H01L2224/81894 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/3011 ,  Y10T428/24917 ,  Y10T428/31667 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

Abstract translation: 提供具有缓冲层的接合结构及其形成方法。 接合结构包括其上具有金属垫的第一衬底，覆盖在衬底的表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属 覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。 第一金属层，电极和接合层被接合以形成接合结构。 可以通过表面活化或热压直接粘合。 该方法使用较少的步骤并且更可靠。 粘结结构所需的温度较低。 接触表面之间的结合密度增加到细间距。 增加接合点的质量，因为产生了接触表面之间的较少的污染物。

公开(公告)号：US06767818B1

公开(公告)日：2004-07-27

申请号：US09634556

申请日：2000-08-07

Applicant: Shyh-Ming Chang ,  Tai-Hong Chen ,  Yu-Te Hsieh ,  Chun-Ming Huang ,  Jui Ming Ni ,  Ching-Yun Chang ,  Jwo-Huei Jou

Inventor： Shyh-Ming Chang ,  Tai-Hong Chen ,  Yu-Te Hsieh ,  Chun-Ming Huang ,  Jui Ming Ni ,  Ching-Yun Chang ,  Jwo-Huei Jou

IPC: H01L2144

CPC classification number: H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2224/05624 ,  H01L2924/00014 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05684 ,  H01L2224/05124 ,  H01L2224/05147

Abstract: A method for forming electrically conductive bumps on a semiconductor substrate, or a semiconductor wafer and devices formed by the method are disclosed. In the method, a wafer that has an active surface, a plurality of conductive elements formed on the active surface and a passivation layer insulating the plurality of conductive bumps from each other is first provided. A first metal layer is then sputter deposited on top of the plurality of conductive elements and the passivation layer, followed by stencil printing a plurality of bumps of an insulating material on top of each one of the plurality of conductive elements. The plurality of bumps may be heat treated to a temperature of at least 100° C. for a period of at least 10 minutes for stress relief. A second metal layer is then sputter deposited on top of the plurality of bumps and the first metal layer. The first and the second metal layers are then patterned by a photolithographic process and formed by a wet or dry etching process to remove metal layers in areas in-between the plurality of bumps.

Abstract translation: 公开了一种在半导体衬底或半导体晶片上形成导电凸块的方法以及通过该方法形成的器件。 在该方法中，首先提供具有活性表面的晶片，形成在有源表面上的多个导电元件和使多个导电凸块彼此绝缘的钝化层。 然后将第一金属层溅射沉积在多个导电元件和钝化层的顶部上，随后在多个导电元件中的每一个的顶部上模版印刷绝缘材料的多个凸块。 多个凸起可以被热处理至至少100℃的温度至少10分钟的时间以减轻应力。 然后将第二金属层溅射沉积在多个凸起和第一金属层的顶部上。 然后通过光刻工艺对第一和第二金属层进行构图，并通过湿式或干式蚀刻工艺形成，以去除多个凸块之间的区域中的金属层。

公开(公告)号：US5393697A

公开(公告)日：1995-02-28

申请号：US239424

申请日：1994-05-06

Applicant: Shyh-Ming Chang ,  Yu-Chi Lee ,  Hsiu-Mei Yu ,  Li-Hui Yang ,  Jwo-huei Jou

Inventor： Shyh-Ming Chang ,  Yu-Chi Lee ,  Hsiu-Mei Yu ,  Li-Hui Yang ,  Jwo-huei Jou

IPC: H01L21/60 ,  H01L23/485 ,  H01L21/44

CPC classification number: H01L24/11 ,  H01L24/13 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/1319 ,  H01L2224/13609 ,  H01L2224/13624 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13666 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01058 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/14

Abstract: A composite bump structure and methods of forming the composite bump structure. The composite bump structure comprises a polymer body of relatively low Young's Modulus compared to metals covered by a conductive metal coating formed at the input/output pads of an integrated circuit element or substrate. The composite bump is formed using material deposition, lithography, and etching techniques. A layer of soldering metal can be formed on the composite bumps if this is desired for subsequent processing.

Abstract translation: 复合凸块结构和形成复合凸块结构的方法。 与由在集成电路元件或衬底的输入/输出焊盘处形成的导电金属涂层覆盖的金属相比，复合凸块结构包括相对低的杨氏模量的聚合物体。 使用材料沉积，光刻和蚀刻技术形成复合凸块。 如果需要后续处理，可以在复合凸块上形成一层焊接金属。

公开(公告)号：US07977788B2

公开(公告)日：2011-07-12

申请号：US11603909

申请日：2006-11-24

Applicant: Shyh-Ming Chang ,  Sheng-Shu Yang ,  Chao-Chyun An

Inventor： Shyh-Ming Chang ,  Sheng-Shu Yang ,  Chao-Chyun An

IPC: H01L23/48

CPC classification number: H01L24/10 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/051 ,  H01L2224/05548 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/13008 ,  H01L2224/13099 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A contact structure having both a compliant bump and a testing area and a manufacturing method for the same is introduced. The compliant bump is formed on a conductive contact of the silicon wafer or a printed circuit board. The core of the bump is made of polymeric material, and coated with a conductive material. In particular, the compliant bump is disposed on the one side of the conductive contact structure that includes both the bump and the testing area, wherein the testing area allows the area to be functionality tested, so as to prevent damage of the coated conductive material over the compliant bump during a probe testing.

Abstract translation: 引入具有兼容凸起和测试区域的接触结构及其制造方法。 柔性突起形成在硅晶片或印刷电路板的导电接触上。 凸块的核心由聚合材料制成，并涂覆有导电材料。 特别地，柔性突起设置在包括凸起和测试区域的导电接触结构的一侧上，其中测试区域允许该区域被功能性测试，以便防止涂覆的导电材料的损坏超过 探针测试期间的顺应性凸块。

公开(公告)号：US20090246988A1

公开(公告)日：2009-10-01

申请号：US12144658

申请日：2008-06-24

Applicant: Sheng-Shu Yang ,  Shyh-Ming Chang

Inventor： Sheng-Shu Yang ,  Shyh-Ming Chang

IPC: H01R4/58 ,  H05K3/02

CPC classification number: H05K3/4007 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05567 ,  H01L2224/1147 ,  H01L2224/13007 ,  H01L2224/13008 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13078 ,  H01L2224/1319 ,  H01L2224/13562 ,  H01L2224/13563 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/1401 ,  H01L2224/1411 ,  H01L2224/1415 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81903 ,  H01L2224/83101 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2224/83874 ,  H01L2224/9211 ,  H01L2924/0001 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01033 ,  H01L2924/15788 ,  H01R12/714 ,  H05K3/325 ,  H05K3/368 ,  H05K2201/0367 ,  H05K2201/09909 ,  Y10S439/931 ,  Y10T29/49155 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A contact structure disposed on a substrate is provided. The contact structure includes a pad, a polymer bump and a conductive layer. The pad is on the substrate. The polymer bump having a curve surface and a steep surface connecting with the curve surface is disposed on the substrate. The polymer bump is covered by the conductive layer and the conductive layer is electrically connected with the pad.

Abstract translation: 设置在基板上的接触结构。 接触结构包括垫，聚合物凸块和导电层。 衬垫在衬底上。 具有弯曲表面和与曲面连接的陡峭表面的聚合物凸块设置在基板上。 聚合物凸块被导电层覆盖，并且导电层与焊盘电连接。