Sensing field effect transistor devices and method of their manufacture
    35.
    发明授权
    Sensing field effect transistor devices and method of their manufacture 有权
    感应场效应晶体管器件及其制造方法

    公开(公告)号:US09470652B1

    公开(公告)日:2016-10-18

    申请号:US14854265

    申请日:2015-09-15

    IPC分类号: H01L21/00 G01N27/414

    摘要: A sensing device includes a sensor die having a sensing region formed at a first surface of the sensor die. The sensing device further includes an encapsulant covering the sensing die, the encapsulant having a cavity formed therein, wherein the cavity exposes the sensing region. A sensitive membrane material is deposited within the cavity over the sensing region. A method of manufacturing sensing devices entails mounting a plurality of sensing dies to a carrier, encapsulating the dies in an encapsulant, forming cavities in the encapsulant, the cavities exposing a sensing region of each sensor die, and depositing the sensitive membrane material within each of the cavities. The encapsulating and forming operations can be performed simultaneously using a film-assisted molding (FAM) process, and the depositing operation is performed following FAM at an ambient temperature that is lower than the temperature needed to perform FAM.

    摘要翻译: 感测装置包括具有形成在传感器管芯的第一表面处的感测区域的传感器管芯。 感测装置还包括覆盖感测裸片的密封剂,所述密封剂具有形成在其中的空腔,其中所述空腔暴露感测区域。 敏感膜材料沉积在感应区域内的空腔内。 制造感测装置的方法需要将多个感测管芯安装到载体上,将管芯封装在密封剂中,在密封剂中形成空腔,使空腔暴露每个传感器管芯的感测区域,并将敏感膜材料沉积在每个 空腔。 封装和成型操作可以使用薄膜辅助模制(FAM)工艺同时进行,并且在低于执行FAM所需的温度的环境温度下,在FAM之后进行沉积操作。

    Compliant pin fin heat sink and methods
    36.
    发明授权
    Compliant pin fin heat sink and methods 有权
    标准散热片散热片和方法

    公开(公告)号:US09425124B2

    公开(公告)日:2016-08-23

    申请号:US13364907

    申请日:2012-02-02

    摘要: A heat sink includes a plurality of layers being disposed substantially parallel with a surface of a heat source. The layers include a plurality of pin portions spaced apart from each other in a planar arrangement wherein the pin portions of the layers are stacked and bonded to form pin fins extending in a transverse direction relative to the heat source to sink heat. A compliant layer is disposed between the pin fins and a mechanical load. The compliant layer provides compliance such that the pin fins accommodate dimensional differences when interfacing with the heat source.

    摘要翻译: 散热器包括与热源的表面基本平行的多个层。 这些层包括以平面布置彼此间隔开的多个销部分,其中层的销部分被堆叠并结合以形成相对于热源在横向方向上延伸以散热的销散热片。 柔性层设置在销散热片和机械负载之间。 顺应层提供顺应性,使得当与热源接合时,销翅片适应尺寸差异。

    TFT array substrate having metal oxide part and method for manufacturing the same and display device
    38.
    发明授权
    TFT array substrate having metal oxide part and method for manufacturing the same and display device 有权
    具有金属氧化物部分的TFT阵列基板及其制造方法和显示装置

    公开(公告)号:US09305942B2

    公开(公告)日:2016-04-05

    申请号:US13703499

    申请日:2012-09-21

    发明人: Xiang Liu Jianshe Xue

    摘要: Embodiments of the present invention provide a TFT array substrate and a method for manufacturing the same and a display device. The TFT array substrate comprises: a base substrate; gate lines, gate electrodes, a gate insulating layer and a semiconductor active layer formed on the base substrate; a metal barrier layer formed on the semiconductor active layer, the metal barrier layer covering the semiconductor active layer; source electrodes and drain electrodes formed on the metal barrier layer, with a metal oxide part being formed between the source electrode and the drain electrode to insulate the source electrode and the drain electrode from each other; and a protection layer formed on the gate insulating layer and the source and drain electrodes, wherein the metal oxide part is formed by oxidizing a part of the metal barrier layer located between the source electrode and the drain electrode.

    摘要翻译: 本发明的实施例提供一种TFT阵列基板及其制造方法以及显示装置。 TFT阵列基板包括:基底基板; 栅极线,栅电极,栅绝缘层和形成在基底基板上的半导体有源层; 形成在所述半导体有源层上的金属阻挡层,所述金属阻挡层覆盖所述半导体有源层; 源电极和漏电极,形成在金属阻挡层上,金属氧化物部分形成在源电极和漏电极之间,以使源电极和漏极彼此绝缘; 以及形成在所述栅极绝缘层和所述源极和漏极上的保护层,其中所述金属氧化物部分通过氧化位于所述源电极和所述漏极之间的所述金属阻挡层的一部分而形成。