公开(公告)号：US20160204290A1

公开(公告)日：2016-07-14

申请号：US15077169

申请日：2016-03-22

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： AUGUSTIN J. HONG ,  MARINUS J. HOPSTAKEN ,  JEEHWAN KIM ,  JOHN A. OTT ,  DEVENDRA K. SADANA

IPC分类号： H01L31/0392 ,  H01L31/18 ,  H01L31/07 ,  H01L31/20

CPC分类号： H01L31/03921 ,  H01L31/03762 ,  H01L31/03767 ,  H01L31/07 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.

摘要翻译： 形成光伏器件的方法包括在透明电极和p型层之间形成缓冲层。 缓冲层包括掺杂的无锗硅基材料。 缓冲层具有落在透明电极和p型层的势垒能内的功函数。 在p型层上形成本征层和n型层。 还提供设备。

公开(公告)号：US09368662B2

公开(公告)日：2016-06-14

申请号：US13820492

申请日：2011-08-31

申请人： Thomas Tibbits ,  Ben Browne

发明人： Massimo Mazzer ,  Thomas Tibbits ,  Ben Browne

IPC分类号： H01L31/052 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/0304 ,  B82Y20/00

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L31/03048 ,  H01L31/075 ,  H01L31/18 ,  H01L31/1848 ,  Y02E10/544 ,  Y02E10/548

摘要： A photovoltaic junction for a solar cell is provided. The photovoltaic junction has an intrinsic region comprising a multiple quantum well stack formed from a series of quantum wells separated by barriers, in which the tensile stress in some of the quantum wells is partly or completely balanced by compressive stress in the others of the quantum wells. The overall elastostatic equilibrium of the multiple quantum well stack may be ensured by engineering the structural and optical properties of the quantum wells only, with the barriers having the same lattice constant as the materials used in the oppositely doped semiconductor regions of the junction, or equivalently as the actual lattice size of the junction or intrinsic region, or the bulk or effective lattice size of the substrate. Alternatively, the barriers may contribute to the stress balance.

摘要翻译： 提供了一种用于太阳能电池的光伏结。 该光伏结具有包含多个量子阱堆叠的本征区域，该多重量子阱堆叠由一系列被势垒隔开的量子阱形成，其中一些量子阱中的拉应力部分地或完全地通过其他量子阱中的压应力平衡 。 可以通过仅对量子阱的结构和光学性质进行工程来确保多量子阱堆叠的整体弹塑性平衡，其中阻挡层具有与在结的相反掺杂的半导体区域中使用的材料相同的晶格常数，或等效地 作为结或本征区域的实际晶格尺寸，或衬底的本体或有效晶格尺寸。 或者，障碍可能有助于压力平衡。

公开(公告)号：US09356171B2

公开(公告)日：2016-05-31

申请号：US13401206

申请日：2012-02-21

申请人： Jifeng Liu ,  Xiaoxin Wang

发明人： Jifeng Liu ,  Xiaoxin Wang

IPC分类号： H01L31/0368 ,  C30B1/02 ,  C30B29/06 ,  H01L31/076 ,  H01L31/18

CPC分类号： H01L31/0368 ,  C30B1/02 ,  C30B1/023 ,  C30B29/06 ,  H01L31/03682 ,  H01L31/076 ,  H01L31/1872 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or polycrystalline layer, and laser-heats a seed spot having size on the order of a critical nucleation size of the thin-film layer. The single-crystal seed spot is extended into a single-crystal seed line by laser-heating one or more crystallization zones adjacent to the seed spot and drawing the zone across the thin-film layer. The single-crystal seed line is extended across the thin-film material layer into a single-crystal layer by laser-heating an adjacent linear crystallization zone and drawing the crystallization zone across the thin-film layer. Photovoltaic cells may be formed in or on the single-crystal layer. Tandem photovoltaic devices may be formed using one or several iterations of the method. The method may also be used to form single-crystal semiconductor thin-film transistors, such as for display devices, or to form single-crystal superconductor layers.

摘要翻译： 用于形成单晶或大晶粒薄膜层的方法沉积薄膜非晶，纳米晶体，微晶或多晶层，并且激光加热具有临界成核尺寸级别的大小的晶种点 薄膜层。 通过激光加热与种子斑点相邻的一个或多个结晶区域并将该区域横穿薄膜层，将单晶种子斑点延伸到单晶种子线中。 单晶种子线通过激光加热相邻的线性结晶区并在薄膜层上拉伸结晶区，在薄膜材料层上延伸成单晶层。 光电池可以形成在单晶层中或单晶层上。 可以使用该方法的一个或多个迭代来形成串联光伏器件。 该方法也可用于形成诸如显示器件的单晶半导体薄膜晶体管，或者形成单晶超导体层。

公开(公告)号：US09337372B2

公开(公告)日：2016-05-10

申请号：US14134496

申请日：2013-12-19

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Akiyoshi Ogane ,  Yasufumi Tsunomura

IPC分类号： H01L31/0747 ,  H01L31/075 ,  H01L31/0376

CPC分类号： H01L31/03762 ,  H01L31/022425 ,  H01L31/03682 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548

摘要： A photovoltaic device may be provided having a semiconductor substrate, an i-type amorphous layer or an i-type amorphous layer formed over a front surface or a back surface of the semiconductor substrate, and a p-type amorphous layer or an n-type amorphous layer formed over the i-type amorphous layer or the i-type amorphous layer. The i-type amorphous layer or the i-type amorphous layer has an oxygen concentration profile in which a concentration is reduced in a step-shape from a region near an interface with the semiconductor substrate and along a thickness direction.

摘要翻译： 可以提供一种光电器件，其具有形成在半导体衬底的前表面或背表面上的半导体衬底，i型非晶层或i型非晶层，以及p型非晶层或n型 形成在i型非晶层或i型非晶层上的非晶层。 i型非晶层或i型非晶层具有浓度从半导体衬底的界面附近的区域和厚度方向上逐渐降低的氧浓度分布。

公开(公告)号：US09306095B2

公开(公告)日：2016-04-05

申请号：US14359582

申请日：2012-10-19

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： Kazuhiro Nobori

IPC分类号： H01L31/044 ,  H01L31/024 ,  H01L31/052 ,  H01L31/0725 ,  H01L31/0232 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/048 ,  H01L31/18

CPC分类号： H01L31/024 ,  H01L31/02327 ,  H01L31/048 ,  H01L31/052 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/548

摘要： A solar cell includes: a substrate having heat dissipating characteristics; a solar cell bonded to the substrate such that the solar cell is electrically connected on a first conductive line and a second conductive line, which are disposed on a surface of the substrate; a lens, which is bonded to a transparent electrode of the solar cell; a plurality of projections, which maintain a gap between the substrate and the lens; tapered hole sections in the substrate, each of said tapered hole sections having a tapered section of each of the protruding sections fitted therein; and a sealing resin applied to the gap.

摘要翻译： 太阳能电池包括：具有散热特性的基板; 太阳能电池，其结合到所述基板，使得所述太阳能电池电连接在设置在所述基板的表面上的第一导线和第二导线上; 透镜，其结合到太阳能电池的透明电极; 多个突起，其保持所述基板和所述透镜之间的间隙; 在所述基板中的锥形孔部分，每个所述锥形孔部分具有装配在其中的每个突出部分的锥形部分; 以及施加到间隙的密封树脂。

公开(公告)号：US20160093759A1

公开(公告)日：2016-03-31

申请号：US14892452

申请日：2014-05-12

申请人： ELECTRICITE DE FRANCE ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS

发明人： Myriam Paire ,  Jean-Francois Guillemoles ,  Laurent Lombez ,  Daniel Lincot ,  Stephane Collin ,  Jean-Luc Pelouard

IPC分类号： H01L31/054 ,  H01L31/0475

CPC分类号： H01L31/0543 ,  H01L31/035281 ,  H01L31/0475 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/075 ,  H02S10/10 ,  Y02E10/52 ,  Y02E10/548

摘要： A method for fabricating a photovoltaic device with light concentration, comprising: a first step of fabricating, on a substrate, a first array of photovoltaic cells from a stack of layers deposited on the substrate, the cells of the first array being connected to a first group of electrical connectors, a second step of forming a light concentration system above the cells of the first array. It further comprises: a third step, prior to at least the second step, of forming on the substrate a second array of photovoltaic cells from a stack of layers deposited on the substrate, the cells of the second array being interspersed with the cells of the first array and connected to a second group of electrical connectors, and being without a light concentration system.

摘要翻译： 一种用于制造具有光浓度的光伏器件的方法，包括：第一步骤，在衬底上从沉积在所述衬底上的层的堆叠中制造第一阵列的光伏电池，所述第一阵列的单元连接到第一 一组电连接器，在第一阵列的单元上方形成光浓度系统的第二步骤。 其还包括：第三步骤，在至少第二步骤之前，在沉积在衬底上的层的堆叠层上在衬底上形成第二阵列的光伏电池阵列，第二阵列的电池散布在衬底上， 第一阵列并连接到第二组电连接器，并且没有光集中系统。

公开(公告)号：US09269847B2

公开(公告)日：2016-02-23

申请号：US13832906

申请日：2013-03-15

申请人： Canberra Industries, Inc.

发明人： Kenneth Michael Yocum ,  James F. Colaresi ,  Orren K. Tench

IPC分类号： H01L31/117 ,  G01T1/167 ,  H01L31/08 ,  G01T1/29 ,  H01L31/075

CPC分类号： H01L31/117 ,  G01T1/167 ,  G01T1/2928 ,  H01L31/075 ,  H01L31/085 ,  Y02E10/548

摘要： A small anode germanium well (SAGe well) radiation detector system/method providing for low capacitance, short signal leads, small area bottom-oriented signal contacts, enhanced performance independent of well diameter, and ability to determine radiation directionality is disclosed. The system incorporates a P-type bulk germanium volume (PGEV) having an internal well cavity void (IWCV). The external PGEV and IWCV surfaces incorporate an N+ electrode except for the PGEV external base region (EBR) in which a P+ contact electrode is fabricated within an isolation region. The PGEV structure is further encapsulated to permit operation at cryogenic temperatures. Electrical connection to the SAGe well is accomplished by bonding or mechanical contacting to the P+ contact electrode and the N+ electrode. The EBR of the PGEV may incorporate an integrated preamplifier inside the vacuum housing to minimize the noise and gain change due to ambient temperature variation.

摘要翻译： 公开了一种提供低电容，短信号引线，小面积底部定向信号触点，独立于阱直径的增强性能以及确定辐射方向性的能力的小型阳极锗阱（SAGe well）辐射探测器系统/方法。 该系统包含具有内部井腔空隙（IWCV）的P型体积锗体积（PGEV）。 外部PGEV和IWCV表面包含除了在隔离区域内制造P +接触电极的PGEV外部基极区域（EBR）之外的N +电极。 PGEV结构进一步封装以允许在低温下运行。 通过与P +接触电极和N +电极的接合或机械接触来实现与SAGe阱的电连接。 PGEV的EBR可以在真空壳体内部集成一个前置放大器，以最小化由于环境温度变化引起的噪声和增益变化。

公开(公告)号：US20160043251A1

公开(公告)日：2016-02-11

申请号：US14872580

申请日：2015-10-01

申请人： Q1 Nanosystems Corporation

发明人： Robert SMITH ,  Mark R. SCHROEDER ,  Larry BAWDEN ,  John FISHER ,  John BOHLAND

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L31/0236

CPC分类号： H01L31/03529 ,  H01L31/02366 ,  H01L31/035227 ,  H01L31/0392 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/068 ,  H01L31/075 ,  H01L31/18 ,  H02S20/23 ,  Y02B10/12 ,  Y02E10/52 ,  Y02E10/547 ,  Y02E10/548

摘要： Various stamping methods may reduce defects and increase throughput for manufacturing metamaterial devices. Metamaterial devices with an array of photovoltaic bristles, and/or vias, may enable each photovoltaic bristle to have a high probability of photon absorption. The high probability of photon absorption may lead to increased efficiency and more power generation from an array of photovoltaic bristles. Reduced defects in the metamaterial device may decrease manufacturing cost, increase reliability of the metamaterial device, and increase the probability of photon absorption for a metamaterial device. The increase in manufacturing throughput and reduced defects may reduce manufacturing costs to enable the embodiment metamaterial devices to reach grid parity.

摘要翻译： 各种冲压方法可以减少制造超材料装置的缺陷并提高生产量。 具有光伏刷毛阵列和/或通孔的超材料装置可以使得每个光伏刷毛具有高的光子吸收概率。 光子吸收的高概率可能导致从光伏刷毛阵列增加的效率和更多的发电。 超材料装置中减少的缺陷可能降低制造成本，增加超材料装置的可靠性，并增加超材料装置的光子吸收的可能性。 制造产量的增加和缺陷的减少可能降低制造成本，使得实施例的超材料装置达到电网平价。

公开(公告)号：US09246046B1

公开(公告)日：2016-01-26

申请号：US14498850

申请日：2014-09-26

申请人： Scott Harrington ,  Venkatasubramani Balu ,  Staffan Westerberg ,  Peter John Cousins

发明人： Scott Harrington ,  Venkatasubramani Balu ,  Staffan Westerberg ,  Peter John Cousins

IPC分类号： H01L21/00 ,  H01L31/20 ,  H01L31/18 ,  H01L31/068 ,  H01L31/0288 ,  H01L31/0352

CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/035281 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of fabricating a solar cell can include forming a first dopant region over a silicon substrate and an oxide region over the first dopant region. In an embodiment, the oxide region can protect the first dopant region from a first etching process. In an embodiment, a second dopant region can be formed over the silicon substrate, where a mask can be formed to protect a first portion of the second dopant region from the first etching process. In an embodiment, the first etching process can be performed to expose portions of the silicon substrate and/or a silicon region. A second etching process can be performed to form a trench region to separate a first and second doped region of the solar cell. A third etching process can be performed to remove contaminants from the solar cell and remove any remaining portions of the oxide region.

公开(公告)号：US09240516B2

公开(公告)日：2016-01-19

申请号：US14798860

申请日：2015-07-14

申请人： THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITY

发明人： Zetian Mi ,  Md Golam Kibria

IPC分类号： H01L29/08 ,  H01L33/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/14 ,  H01S5/343 ,  H01L33/18 ,  H01S5/40 ,  H01L27/15 ,  H01L31/0735 ,  H01L31/0304 ,  H01L31/0352

CPC分类号： H01L33/06 ,  B82Y10/00 ,  B82Y40/00 ,  C25B1/003 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02664 ,  H01L27/153 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/127 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/66469 ,  H01L29/66977 ,  H01L29/775 ,  H01L31/03044 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/072 ,  H01L31/0735 ,  H01L31/075 ,  H01L33/0025 ,  H01L33/005 ,  H01L33/14 ,  H01L33/18 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/34333 ,  H01S5/34346 ,  H01S5/4025 ,  Y02E10/544 ,  Y02E10/548 ,  H01L2924/00

摘要： Amongst the candidates for very high efficiency electronics, solid state light sources, photovoltaics, and photoelectrochemical devices, and photobiological devices are those based upon metal-nitride nanowires. Enhanced nanowire performance typically require heterostructures, quantum dots, etc which requirement that these structures are grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. Methods of growing relatively defect free nanowires and associated structures for group IIIA-nitrides are presented without the requirement for foreign metal catalysts, overcoming the non-uniform growth of prior art techniques and allowing self-organizing quantum dot, quantum well and quantum dot-in-a-dot structures to be formed. Such metal-nitride nanowires and quantum structure embedded nanowires support a variety of devices including but not limited to very high efficiency electronics, solid state light sources, photovoltaics, and photoelectrochemical devices, and photobiological devices.

摘要翻译： 在非常高效率的电子，固态光源，光伏和光电化学装置和光生物装置的候选者中，是基于金属氮化物纳米线的那些。 增强的纳米线性能通常需要异质结构，量子点等，这些结构要求这些结构以相对较少的缺陷生长并且以可控的可再现方式生长。 另外根据器件设计的灵活性要求衬底上的纳米线可以是InN或GaN。 在不需要外来金属催化剂的情况下，提出生长相对无缺陷的纳米线和相关结构的方法，克服了现有技术的非均匀生长，并允许自组织量子点，量子阱和量子点 要形成的点阵结构。 这种金属氮化物纳米线和量子结构嵌入的纳米线支持各种设备，包括但不限于非常高效率的电子器件，固态光源，光伏和光电化学器件以及光生物器件。