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    Multiple-gate transistors with reverse T-shaped fins
    45.
    发明授权
    Multiple-gate transistors with reverse T-shaped fins 有权
    具有反向T形翅片的多栅极晶体管

    公开(公告)号：US08058692B2

    公开(公告)日：2011-11-15

    申请号：US12345332

    申请日：2008-12-29

    Applicant: Li-Shyue Lai ,  Jing-Cheng Lin

    Inventor： Li-Shyue Lai ,  Jing-Cheng Lin

    IPC: H01L29/786

    CPC classification number: H01L29/785 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66795

    Abstract: A method of forming an integrated circuit structure includes forming a first insulation region and a second insulation region in a semiconductor substrate and facing each other; and forming an epitaxial semiconductor region having a reversed T-shape. The epitaxial semiconductor region includes a horizontal plate including a bottom portion between and adjoining the first insulation region and the second insulation region, and a fin over and adjoining the horizontal plate. The bottom of the horizontal plate contacts the semiconductor substrate. The method further includes forming a gate dielectric on a top surface and at least top portions of sidewalls of the fin; and forming a gate electrode over the gate dielectric.

    Abstract translation: 形成集成电路结构的方法包括：在半导体衬底中形成第一绝缘区域和第二绝缘区域并彼此面对; 以及形成具有反向T形的外延半导体区域。 外延半导体区域包括水平板，该水平板包括在第一绝缘区域和第二绝缘区域之间并邻接第一绝缘区域之间的底部，以及在水平板上并邻接的鳍状物。 水平板的底部接触半导体衬底。 该方法还包括在鳍的顶表面和至少顶部的顶部形成栅电介质; 以及在所述栅极电介质上形成栅电极。

    COMPUTER-AIDED DIAGNOSTIC SYSTEMS AND METHODS FOR DETERMINING SKIN COMPOSITIONS BASED ON TRADITIONAL CHINESE MEDICINAL (TCM) PRINCIPLES
    46.
    发明申请
    COMPUTER-AIDED DIAGNOSTIC SYSTEMS AND METHODS FOR DETERMINING SKIN COMPOSITIONS BASED ON TRADITIONAL CHINESE MEDICINAL (TCM) PRINCIPLES 有权
    计算机辅助诊断系统及方法基于传统中医药（TCM）原理测定皮肤组合物

    公开(公告)号：US20110238604A1

    公开(公告)日：2011-09-29

    申请号：US12893447

    申请日：2010-09-29

    Applicant: Denise M. DiCanio ,  Arlette Palo ,  Jing Cheng ,  Rose Marie Sparacio ,  Julie A. Hidalgo ,  Eric G. Yovine

    Inventor： Denise M. DiCanio ,  Arlette Palo ,  Jing Cheng ,  Rose Marie Sparacio ,  Julie A. Hidalgo ,  Eric G. Yovine

    IPC: G06N7/02 ,  G06F15/18

    CPC classification number: G16H50/20 ,  G06F19/00 ,  G16H10/20

    Abstract: Computer-aided systems and methods are provided for determining the skin composition of a specific user according to Traditional Chinese Medicinal (TCM) principles by statistically analyzing biological and/or psychological information collected from such user, such as age, gender, bodily sensation, skin condition and complexion, sleep pattern, dietary habits, energy level, stress level, physical fitness and emotional wellness, so as to classify the skin composition of the user according to TCM principles but without employing a TCM practitioner. Preferably, the skin composition classification is indicative of Yin-Yang balance of the skin of the user or the lack thereof. The present systems and methods may further recommend to the user one or more topical skin care regimens and/or ingestible skin benefit products suitable for the skin composition of the specific user.

    Abstract translation: 提供计算机辅助系统和方法，通过统计分析从这样的用户收集的生物和/或心理信息，如年龄，性别，身体感觉，皮肤，根据中医药（TCM）原理确定特定用户的皮肤组成 条件和肤色，睡眠模式，饮食习惯，能量水平，压力水平，身体健康和情绪健康，以根据中医原理对用户的皮肤组成进行分类，但不使用中医从业人员。 优选地，皮肤组合物分类表示使用者的皮肤的阴阳平衡或其缺乏。 本系统和方法可以进一步向使用者推荐适合于特定用户的皮肤组合物的一种或多种局部皮肤护理方案和/或可摄取的皮肤益处产品。

    HIGH VOLTAGE GAIN POWER CONVERTER
    47.
    发明申请
    HIGH VOLTAGE GAIN POWER CONVERTER 失效
    高压变压器

    公开(公告)号：US20110163599A1

    公开(公告)日：2011-07-07

    申请号：US12683412

    申请日：2010-01-06

    Applicant: Ching-Shan Leu ,  Jing-Cheng Lin ,  Shun-Yuan Wu

    Inventor： Ching-Shan Leu ,  Jing-Cheng Lin ,  Shun-Yuan Wu

    IPC: H02M3/156

    CPC classification number: H02M3/155 ,  H02M3/158 ,  H02M2001/009 ,  Y10T307/406

    Abstract: A high voltage gain power converter includes: a main switch element; an assistant switch element; a first inductive element, a first switch element, and a first capacitive element; and a second inductive element, a second switch element, and a second capacitive element. The first inductive element is connected between an input node and first switch element. The first capacitive element, connected between the first switch element and ground, provides a first boost output voltage. The second inductive element is connected between the main switch element and first capacitive element. The second switch element is connected to a common node of the second inductive element and main switch element. The second capacitive element, connecting the second switch element to a first node, provides a second boost output voltage. The assistant switch element is connected between the first inductive element and common node of the second inductive element and main switch element.

    Abstract translation: 高压增益功率转换器包括：主开关元件; 辅助开关元件; 第一电感元件，第一开关元件和第一电容元件; 以及第二感应元件，第二开关元件和第二电容元件。 第一电感元件连接在输入节点和第一开关元件之间。 连接在第一开关元件和地之间的第一电容元件提供第一升压输出电压。 第二电感元件连接在主开关元件和第一电容元件之间。 第二开关元件连接到第二电感元件和主开关元件的公共节点。 将第二开关元件连接到第一节点的第二电容元件提供第二升压输出电压。 辅助开关元件连接在第二电感元件和主开关元件的第一电感元件和公共节点之间。

    Depletion-Free MOS using Atomic-Layer Doping
    48.
    发明申请
    Depletion-Free MOS using Atomic-Layer Doping 有权
    消耗MOS的原子层掺杂

    公开(公告)号：US20110018069A1

    公开(公告)日：2011-01-27

    申请号：US12854638

    申请日：2010-08-11

    Applicant: Jing-Cheng Lin ,  Chen-Hua Yu

    Inventor： Jing-Cheng Lin ,  Chen-Hua Yu

    IPC: H01L27/092

    CPC classification number: H01L21/823842 ,  H01L21/2254 ,  H01L21/28035 ,  H01L29/4925 ,  H01L29/6659

    Abstract: A semiconductor device and a method of manufacturing are provided. A dielectric layer is formed over a substrate, and a first silicon-containing layer, undoped, is formed over the dielectric layer. Atomic-layer doping is used to dope the undoped silicon-containing layer. A second silicon-containing layer is formed over first silicon-containing layer. The process may be expanded to include forming a PMOS and NMOS device on the same wafer. For example, the first silicon-containing layer may be thinned in the PMOS region prior to the atomic-layer doping. In the NMOS region, the doped portion of the first silicon-containing layer is removed such that the remaining portion of the first silicon-containing layer in the NMOS is undoped. Thereafter, another atomic-layer doping process may be used to dope the first silicon-containing layer in the NMOS region to a different conductivity type. A third silicon-containing layer may be formed doped to the respective conductivity type.

    Abstract translation: 提供半导体器件和制造方法。 介电层形成在衬底上，并且在介电层上形成未掺杂的第一含硅层。 原子层掺杂用于掺杂未掺杂的含硅层。 在第一含硅层上形成第二含硅层。 该过程可以扩展到包括在同一晶片上形成PMOS和NMOS器件。 例如，在原子层掺杂之前，第一含硅层可以在PMOS区中减薄。 在NMOS区域中，去除第一含硅层的掺杂部分，使得NMOS中的第一含硅层的剩余部分未掺杂。 此后，可以使用另一种原子层掺杂工艺将NMOS区域中的第一含硅层掺杂到不同的导电类型。 可以形成掺杂到相应导电类型的第三含硅层。

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